Abstract: Apparatuses, systems, and methods for implementing a virtual machine on a data storage device are disclosed. In one embodiment, a device may comprise a communication interface responsive to a host, a processor, and a housing including the communication interface and the processor such that the device is removable from the host. The processor may be configured to receive a command from the host via the communication interface, process the command using a platform-independent program interface that is not dependent on the architecture of the device, and return results of the command to the host via the communication interface. In another embodiment, a method may comprise receiving at a data storage device a command from a host device, processing the command at the data storage device using a platform-independent program interface, and returning the results of the command from the data storage device to the host.

Abstract: Apparatuses, systems, and methods for implementing fast resume from hibernate are disclosed. In one embodiment, an apparatus can include a data storage device having a circuit configured to determine a first memory location of hibernation data without receiving an indication of the first memory location from the host, and store the hibernation data to a second memory location of the DSD.

Abstract: A device may comprise a first data storage medium, a second data storage medium, and a controller. The controller may be configured to store file system information to the first data storage medium, storing a copy of file system information for the first data storage medium to the second data storage medium as a backup, loading the file system information from the first data storage medium to a cache memory when the file system information in the first data storage medium contains valid data, and loading the copy of the file system information from the second data storage medium to the cache when the file system information in the first data storage medium does not contain valid data.

Abstract: Apparatus for recording data and method for making the same. In accordance with some embodiments, a magnetic recording layer is adapted to store data along perpendicular magnetic domains. A protective overcoat layer is formed on the magnetic recording layer to substantially protect the magnetic recording layer from environmental effects. The protective overcoat layer is made of carbon intermixed with at least one transition metal, such as but not limited to chromium.

Abstract: An apparatus includes an optical pathway configured to deliver energy to heat a magnetic recording medium via a slider body. The optical pathway generates heat in the slider body when delivering energy to the magnetic recording medium. The apparatus includes a compensating heater with a thermal characteristic that matches a thermal characteristic of the optical pathway. The compensating heater is activated at least part of the time when the optical pathway is not delivering the energy to the magnetic recording medium.

Abstract: A magnetic recording head includes a magnetic writer comprising a main write pole and a return write pole. The magnetic recording head includes a write heater assembly comprising at least one first heater subassembly and at least one second heater subassembly. At least part of the magnetic write head is disposed between the first heater subassembly and the second heater subassembly. When the first heater subassembly, the second heater subassembly, and the magnetic writer are energized, a variation in the thermal protrusion of the head media interface of the magnetic recording head may be less than about 20 nm along the down track and/or cross track directions.

Abstract: A shallow trench discrete track media structure is fabricated by etching a magnetic recording layer to provide a plurality of discrete magnetic data tracks separated by shallow trenches. Each shallow trench has a trench floor formed at a depth in the magnetic recording layer that is less than the thickness of the magnetic recording layer. Exposed regions of the magnetic recording layer beneath the trench floor are reacted with reactive plasma to diminish the magnetic moment of the exposed regions.

Abstract: A laser diode includes a substrate and a junction layer disposed on the substrate. The junction layer forms a quantum well of the laser diode. The laser diode includes a junction surface having at least one channel that extends through the junction layer to the substrate. The at least one channel defines an anode region and a cathode region. A cathode electrical junction is disposed on the junction surface at the cathode region, and an anode electrical junction is disposed on the junction surface and coupled to the junction layer at the anode region. A cathode metal layer is disposed in at least a trench region of the channel. The cathode metal layer couples the substrate to the cathode electrical junction.

Abstract: A data storage system having a read channel configured to function in a normal operation mode and a test mode. In the normal operation mode, the read channel is configured to decode a readback signal to obtain data bits. In the test mode, the read channel is configured to extract gain control loop data and/or timing control loop data from the readback signal.

Abstract: Provided herein is a motor including a plastic component; a stationary component having a thrustplate; and a rotatable component having a sleeve and a counterplate, wherein the plastic component is positioned outside the sleeve, and wherein the thrustplate and the counterplate are positioned to form a fluid dynamic bearing (“FDB”) at a top portion of the sleeve. Also provided is a motor comprising a plastic component; a stationary component comprising a thrustplate; and a rotatable component comprising a sleeve; wherein the plastic component is affixed to the sleeve, and wherein the thrustplate and the plastic component are positioned to form a FDB. Also provided is a motor comprising a plastic component; a stationary component comprising an inner component; and a rotatable component comprising the plastic component and a supporting means for supporting the inner component, wherein the inner component and the supporting means are positioned to form a FDB.

Abstract: A spin-transfer torque memory apparatus and self-reference read schemes are described. One method of self-reference reading a spin-transfer torque memory unit includes applying a first read current through a magnetic tunnel junction data cell and forming a first bit line read voltage. Then applying a low resistance state polarized write current through the magnetic tunnel junction data cell, forming a low second resistance state magnetic tunnel junction data cell. A second read current is applied through the low second resistance state magnetic tunnel junction data cell to forming a second bit line read voltage. The method also includes comparing the first bit line read voltage with the second bit line read voltage to determine whether the first resistance state of the magnetic tunnel junction data cell was a high resistance state or low resistance state.

Abstract: A method involves depositing a seed layer comprising at least A1 phase FePt. A main layer of A1 phase FePt is deposited over the seed layer. The main layer includes FePt of a different stoichiometry than the seed layer. The seed and main layers are annealed to convert the A1 phase FePt to L10 phase FePt. The annealing involves heating the substrate prior to depositing at least part of the A1 phase FePt of the main or seed layers.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; providing a precursor ion beam, the precursor ion beam including ions; neutralizing at least a portion of the ions of the precursor ion beam to form a neutral particle beam, the neutral particle beam including neutral particles; and directing the neutral particle beam towards the surface of the substrate, wherein both the ions and the neutral particles have implant energies of not greater than 100 eV, and the neutral particles of the particle beam form a layer on the substrate.

Abstract: A method of forming a layer, the method including providing a substrate having at least one surface adapted for deposition thereon; and directing a particle beam towards the surface of the substrate, the particle beam including moderately charged ions (MCIs), substantially all the MCIs independently have charges from ±2 to ±6 and kinetic energies of not greater than about 200 eV, wherein the MCIs do not penetrate more than about 30 ? into the surface of the substrate to form a layer on the substrate.

Abstract: An apparatus and associated method for a non-volatile memory cell with a phonon-blocking insulating layer. In accordance with various embodiments, a magnetic stack has a tunnel junction, ferromagnetic free layer, pinned layer, and an insulating layer that is constructed of an electrically and thermally insulative material that blocks phonons while allowing electrical transmission through at least one conductive feature.

Abstract: An apparatus includes a circuit, a code modulator, and an actuator. The circuit is operable to detect displacements of a rotating object while in motion. The circuit is operable to detect a position of the displacements and to generate a signal associated therewith. The code modulator is operable to generate a modulated signal based on the position and the displacements. The actuator is operable to apply a force to the rotating object, wherein the force is based on the modulated signal.

Abstract: A memory unit includes a giant magnetoresistance cell electrically coupled between a write bit line and a write source line. The giant magnetoresistance cell includes a free magnetic layer. A magnetic tunnel junction data cell is electrically coupled between a read bit line and a read source line. The magnetic tunnel junction data cell includes the free magnetic layer. A write current passes through the giant magnetoresistance cell to switche the giant magnetoresistance cell between a high resistance state and a low resistance state. The magnetic tunnel junction data cell is configured to switch between a high resistance state and a low resistance state by magnetostatic coupling with the giant magnetoresistance cell, and be read by a read current passing though the magnetic tunnel junction data cell.

Abstract: The embodiments disclose a method of fabricating servo integrated templates including depositing a protective layer on servo zone resist layer patterns, patterning integrated data zone features into a substrate, depositing a protective layer on data zones and removing the servo zone protective layer and patterning integrated servo zone features into the substrate and removing the data zone protective layer creating a substrate template used in fabricating data and servo zone integrated patterned stacks.

Abstract: Programmable metallization memory cells include an electrochemically active electrode, an inert electrode and an internal layer between the electrochemically active electrode and the inert electrode. The internal layer having a fast ion conductor material and an apertured layer having a plurality of apertures defined by an electrically insulating material. Each aperture defines at least a portion of a column of fast ion conductor material having superionic clusters.

Abstract: A non-destructive self-reference spin-transfer torque memory unit is disclosed.