Patents by Inventor Seiichi Watanabe

Seiichi Watanabe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Magnetic transfer method to prevent dropout of servo signal
    Patent number: 6804069
    Abstract: The present invention provides a magnetic transfer method for transferring information by bringing a master carrier for magnetic transfer and a slave medium into close contact with each other and by applying a magnetic field for magnetic transfer, said master carrier of magnetic transfer comprising servo areas to be transferred from the master carrier to the slave medium and data areas not to be transferred, both on the same plane.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: October 12, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Masakazu Nishikawa, Seiichi Watanabe
  • Magnetic transfer method
    Patent number: 6785069
    Abstract: The present invention provides a magnetic transfer method for transferring information by bringing a master carrier for magnetic transfer and a slave medium into close contact with each other and by applying a magnetic field for transfer, said master carrier comprising servo areas and data areas, said servo areas are convex, and difference of height between the data areas and the servo areas is within the range of 50-800 nm.
    Type: Grant
    Filed: August 31, 2001
    Date of Patent: August 31, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Masakazu Nishikawa, Seiichi Watanabe
  • Plasma processing method and apparatus
    Patent number: 6777037
    Abstract: A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.
    Type: Grant
    Filed: September 6, 2001
    Date of Patent: August 17, 2004
    Assignee: Hitachi, Ltd.
    Inventors: Masahiro Sumiya, Hitoshi Tamura, Seiichi Watanabe
  • Master medium for magnetic transfer including metal disk with relief or recess pattern
    Patent number: 6759183
    Abstract: A master medium for use in magnetic transfer of information includes a metal disk which has a first relief or recess pattern representing the information. The metal disk is produced by exposing a photoresist film formed on a base disk with a laser or electron beam modulated with the information while rotating the base disk; developing the photoresist film so as to form an original disk having a second relief or recess pattern; depositing metal on the original disk so as to mold the metal disk on the original disk; and removing the metal disk from the original disk.
    Type: Grant
    Filed: April 30, 2003
    Date of Patent: July 6, 2004
    Assignee: Fuji Photo Film Co., Ltd.
    Inventors: Makoto Nagao, Seiichi Watanabe, Masakazu Nishikawa
  • Plasma processing apparatus and plasma processing method
    Publication number: 20040045673
    Abstract: A plasma processing method for providing plasma processing to an object to be processed disposed within a vacuum processing chamber in which a process gas feeding device feeds process gas into the vacuum processing chamber, a wafer electrode is placed within the vacuum processing chamber for mounting the object to be processed, a wafer bias power generator applies self-bias voltage to the wafer electrode, and a plasma generator generates plasma within the vacuum processing chamber. The plasma processing method flattens either a positive side voltage or a negative side voltage of a voltage waveform of a high frequency voltage generated to the object at an arbitrary voltage.
    Type: Application
    Filed: September 10, 2003
    Publication date: March 11, 2004
    Inventors: Naoki Yasui, Masahiro Sumiya, Hitoshi Tamura, Seiichi Watanabe
  • Master medium for magnetic transfer including metal disk with relief or recess pattern
    Publication number: 20030198833
    Abstract: A master medium for use in magnetic transfer of information includes a metal disk which has a first relief or recess pattern representing the information. The metal disk is produced by exposing a photoresist film formed on a base disk with a laser or electron beam modulated with the information while rotating the base disk; developing the photoresist film so as to form an original disk having a second relief or recess pattern; depositing metal on the original disk so as to mold the metal disk on the original disk; and removing the metal disk from the original disk.
    Type: Application
    Filed: April 30, 2003
    Publication date: October 23, 2003
    Applicant: FUJI PHOTO FILM CO., LTD.
    Inventors: Makoto Nagao, Seiichi Watanabe, Masakazu Nishikawa
  • Plasma processing device and plasma processing method
    Publication number: 20030168012
    Abstract: The present invention creates a uniform high-density plasma within the plasma processing device, solving the problem of electric field concentration around the center axis of the device. The present invention comprises antennas (0113, 0114) having plural phase-controlled power feed points, which are used to introduce plasma-generating electromagnetic waves into a plasma processing chamber by a mode that does not cause electric field concentration at the center area.
    Type: Application
    Filed: August 15, 2002
    Publication date: September 11, 2003
    Inventors: Hitoshi Tamura, Seiichi Watanabe
  • Plasma processing apparatus and plasma processing method
    Publication number: 20030155075
    Abstract: The plasma processing apparatus for providing plasma processing to an object 114 placed inside a processing chamber 104 comprises a vacuum chamber 104, a process gas feeder 105 feeding gas into chamber 104, a wafer electrode 115 disposed within chamber 114 for mounting the object 114, a wafer bias power generator 117 supplying bias voltage to electrode 115, and a plasma generating means 112 for generating plasma within chamber 104, wherein said wafer bias power generator includes a clip circuit for clipping either the positive-side voltage or negative-side voltage to a predetermined voltage.
    Type: Application
    Filed: February 6, 2003
    Publication date: August 21, 2003
    Inventors: Naoki Yasui, Masahiro Sumiya, Hitoshi Tamura, Seiichi Watanabe
  • Printer head
    Patent number: 6575552
    Abstract: A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.
    Type: Grant
    Filed: July 17, 2002
    Date of Patent: June 10, 2003
    Assignee: Sony Corporation
    Inventors: Seiichi Watanabe, Kenji Shinozaki, Minoru Kohno, Hiroyuki Mitsuhashi, Minehiro Tonosaki, Masato Kobayashi
  • Method of purifying amide compound
    Publication number: 20030104586
    Abstract: The invention is to provide a process for effectively removing impurities contained in an amide compound-containing solution by making an amide compound-containing solution, particularly an amide compound-containing solution produced by a hydration reaction of a nitrile compound by using a microorganism fungus body containing nitrile hydratase or a processed product of the microorganism fungus body, in contact with activated carbon under acidic conditions.
    Type: Application
    Filed: September 14, 2001
    Publication date: June 5, 2003
    Inventors: Takeya Abe, Kiyoshi Itou, Kenju Sasaki, Seiichi Watanabe, Tamotsu Asano
  • Heat exchange apparatus for a metal mold
    Publication number: 20030085491
    Abstract: A heat exchange apparatus for a metal mold is provided, which includes a heat exchange passage provided for the metal mold, a first supply unit for supplying hot heat carrier to the heat exchange passage and a second supply unit for supplying cold heat carrier to the heat exchange passage. The heat exchange apparatus performs heat exchange for the metal mold by supplying the hot heat carrier and cold heat carrier to the heat exchange passage switching alternately. And the heat exchange apparatus has a feature that it includes an air supply unit for supplying air to the heat exchange passage so that the heat carriers are purged when the hot heat carrier and cold carrier are switched.
    Type: Application
    Filed: October 31, 2002
    Publication date: May 8, 2003
    Applicant: FUJI PHOTO FILM CO., LTD.
    Inventors: Tatsuhiko Saeki, Seiichi Watanabe
  • Method for processing the surface of an insulating article, printer head and substrate for recording medium
    Publication number: 20020187278
    Abstract: A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.
    Type: Application
    Filed: July 19, 2002
    Publication date: December 12, 2002
    Inventors: Seiichi Watanabe, Kenji Shinozaki, Minoru Kohno, Hiroyuki Mitsuhashi, Minehiro Tonosaki, Masato Kobayashi
  • Method for processing the surface of an insulating article, printer head and substrate for recording medium
    Publication number: 20020182340
    Abstract: A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.
    Type: Application
    Filed: July 17, 2002
    Publication date: December 5, 2002
    Inventors: Seiichi Watanabe, Kenji Shinozaki, Minoru Kohno, Hiroyuki Mitsuhashi, Minehiro Tonosaki, Masato Kobayashi
  • Image forming apparatus
    Patent number: 6480297
    Abstract: An image forming apparatus includes: an image reading device for reading an image of a document to obtain image data; a data communication device connected with a computer for receiving an image data from the computer; a facsimile device connected with a telephone line for receiving an image data through the telephone line; an image memory for storing the image data obtained through the image reading device, the image data obtained through the data communication device, and the image data obtained through the facsimile device; an image memory controller for mediating an access to the image memory in a predetermined priority order for storing and reading the image data among the image reading device, the data communication device, and the facsimile device; and an image forming device for forming the image according to the image data controlled by the image memory controller.
    Type: Grant
    Filed: October 25, 1999
    Date of Patent: November 12, 2002
    Assignee: Konica Corporation
    Inventors: Tomohiro Suzuki, Kunio Shijo, Seiichi Watanabe, Hirohiko Yamazaki, Masaki Kakutani, Kensaku Ogiwara, Satoru Kashiwada, Takayuki Suzuki, Koichi Kitamoto, Kazuo Izumi, Yasuhiko Yamaguchi, Akihiko Oda, Toru Ichiki, Kenji Okuyama
  • Process for producing amide compounds
    Publication number: 20020160466
    Abstract: The invention is a process for continuously producing an amide compound by reacting a microorganism fungus body containing nitrile hydratase or a processed product of the microorganism fungus body with a nitrile compound in an aqueous medium, characterized in that after contacting said fungus body or said processed product of said fungus body with said nitrile compound in said aqueous medium, a reaction solution thus obtained is further subjected to reaction under conditions having a plug flow region, and according to the invention, an amide compound aqueous solution of a high concentration a high purity can be easily obtained in an extremely high conversion rate of a nitrile compound without a condensation process.
    Type: Application
    Filed: November 29, 2001
    Publication date: October 31, 2002
    Inventors: Takeya Abe, Kiyoshi Ito, Kenju Sasaki, Seiichi Watanabe, Toshihisa Tachibana, Tamotsu Asano
  • Method for processing the surface of an insulating article
    Patent number: 6447849
    Abstract: A surface processing method for processing the surface of an insulating article in which an ion-implanted surface-modified layer is effectively formed on the article 2. In surface processing the article 2 of an insulating material, an electrically conductive thin metal film 50 is first formed on the article surface. A pulsed voltage containing a positive pulsed voltage and a negative pulsed voltage is applied to the article in a plasma containing ions to be implanted to implant ions in the article surface. This implants ions at right angles to the article surface to generate a surface-modified layer 51. There is no possibility of the article 2 being charged up due to application of a pulsed voltage.
    Type: Grant
    Filed: June 21, 2000
    Date of Patent: September 10, 2002
    Assignee: Sony Corporation
    Inventors: Seiichi Watanabe, Kenji Shinozaki, Minoru Kohno, Hiroyuki Mitsuhashi, Minehiro Tonosaki, Masato Kobayashi
  • Plasma processing method and apparatus
    Publication number: 20020114897
    Abstract: A plasma processing method and apparatus are provided for processing the surface of a semiconductor device or the like through the effect of plasma. A pulsed plasma discharge is performed by switching on and off the high frequency electric power for generating the plasma with a specified off period of the plasma generation, to control an inflow amount of positive and negative charges to sparse and dense portions of device patterns and suppress an electric potential on a gate oxide film. Thereby, a highly accurate etching process with no charging damage can be carried out.
    Type: Application
    Filed: September 6, 2001
    Publication date: August 22, 2002
    Inventors: Masahiro Sumiya, Hitoshi Tamura, Seiichi Watanabe
  • Complex magnetic head and manufacturing method of complex magnetic head core
    Patent number: 6400530
    Abstract: A method for manufacturing a magnetic head core of a complex magnetic head includes binding a first core material of a U-shaped cross section and a second core material of a flat plate shape to form a tubular core material having two bonded portions between the first and second core materials. Then a plurality of grooves are formed in the tubular core material across one of the bonded portions to form a plurality of track surfaces. The grooves are then filled with a fused glass material, and the other of the bonded portions is removed to form a substantially U-shaped core block having a plurality of track surfaces separated by the glass-filled grooves. The U-shaped core block is then sliced along each of the grooves to obtain a plurality of magnetic head cores. A complex magnetic head manufactured by the method is also disclosed.
    Type: Grant
    Filed: June 4, 1999
    Date of Patent: June 4, 2002
    Assignee: Mitsubishi Denki K.K.
    Inventors: Hirofumi Ouchi, Toshihisa Obuse, Yoshio Kasuga, Tatsunori Hibara, Masao Kouhashi, Kouichi Yamada, Seiichi Handa, Hiromasa Ishii, Seiichi Watanabe
  • Digital still camera
    Patent number: D473576
    Type: Grant
    Filed: May 29, 2002
    Date of Patent: April 22, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventor: Seiichi Watanabe
  • Digital still camera
    Patent number: D484157
    Type: Grant
    Filed: February 25, 2003
    Date of Patent: December 23, 2003
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Seiichi Watanabe, Makoto Nakamura