Abstract: A method of smelting copper includes: a generating step of generating blister and calcium ferrite slag from copper matte by charging the copper matte into a smelting furnace and oxidizing the copper matte; and a refining step of refining another blister from the calcium ferrite slag in an electrical furnace under a temperature condition of 1250 degrees C. to 1350 degrees C. and under a reductive atmosphere condition of oxygen partial pressure logPO2??9.3.

Abstract: A plasma processing apparatus includes: a decompression chamber of which the inside is depressed; a gas supply unit that supplies process gas into said chamber; a microwave supply unit that supplies a microwave into the chamber to generate plasma; an object-placing electrode where a processing material, is placed and which holds the processing material in the chamber; and a vacuuming unit that is connected to the chamber to discharge the gas in the chamber, in which the chamber, a part for providing gas into the chamber of the gas supply unit, a part for introducing a microwave into the chamber of the microwave supply unit, the object-placing electrode, and the vacuuming unit are disposed coaxially with the center axis of the chamber, and the part for introducing a microwave includes a microwave rotation generator that rotates a polarization plane of the input microwave and supplies the microwave to the chamber.

Abstract: A method for manufacturing an optical member from a powdery nano composite material, which includes a thermoplastic resin containing inorganic fine particles, is provided. The method includes: preparing an aggregated intermediate body by heating the powdery nano composite material; and forming the optical member having a finished shape by heat-press molding the intermediate body.

Abstract: A resin material measuring method which obtains a prescribed amount of a resin material by measuring liquid resin material, the resin material measuring method including: charging the resin material having a fluidity into an internal space of a cylinder using a cylinder-piston mechanism which includes: the cylinder having a discharge aperture at one end and the internal space being constant in cross-sectional area; and a piston which is inserted in the internal space; determining a necessary movement stroke length of the piston corresponding to the resin material of a prescribed volume according to a relationship between the volume of the resin material and the cross-sectional area and the movement stroke length; discharging the resin material from the cylinder through the discharge aperture by moving the piston by the determined movement stroke length; and cutting the discharged resin material from the resin material located inside the cylinder.

Abstract: A plasma processing apparatus suitable for high-speed and high-definition etching is provided. By applying to a wafer chucking electrode 9 a voltage waveform in which an absolute value of high frequency voltage increases with time and switching between a positive voltage and a negative voltage occurs, a rectangular high frequency voltage is caused to be generated in the wafer 10, with the result that the duty ratio of the rectangular high frequency voltage decreases and that the high energy ion ratio in the energy distribution of ions incident on the wafer increases. Therefore, high efficiency and high accuracy etching becomes possible, providing the advantage that the material selection ratio is improved.

Abstract: The present invention aims to allow production of a molded item having a highly precise shape. A molding metal mold is provided having a movable metal mold (first metal mold) and a fixed metal mold (second metal mold) defining a cavity therebetween in which a molded item is produced. The movable metal mold has a first convex taper tapering toward the fixed metal mold. The fixed metal mold has a first concave taper fittable with the first convex taper. The first convex taper and the first concave taper are arranged so that, when fitted to each other, respective taper surface abut to each other first, and then a clamping force of the movable metal mold and the fixed metal mold causes an abutting between an end surface and a bottom surface which are respective parting surfaces of the movable metal mold and the fixed metal mold around the cavity. The molding metal mold is used to produce a molded item by means of injection molding, for example.

Abstract: A mold for molding a product in a cavity formed by closing the mold includes a first half; a second half; and a plurality of aligning members which come in contact with each side circumferential surface of the first half 100 and the second half at least in three directions, when the mold is closed. After the mold is closed, at least one of the aligning members is moved to contact the aligning member with the each side circumferential surface of the first half and the second half, which enables a center axis alignment between the first half and the second half.

Abstract: The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage supplied to an electrostatic chuck mechanism and a bias current flowing through the electrostatic chuck mechanism, a capacity component which is an impedance representing the electric property of the electrostatic chuck mechanism is computed numerically. Then, based on a predetermined expression, the voltage of the processing substrate is estimated using the bias voltage of the processing substrate to be measured, the bias current flowing through the electrostatic chuck mechanism and the capacity component which is the impedance acquired in advance.

Abstract: A plasma processing apparatus including: a phase controller for controlling a phase difference between biasing power supplied to the antenna biasing electrode and biasing power supplied to the substrate electrode to have a difference of 180°±45°; wherein the biasing power supplied to the antenna biasing electrode and the biasing power supplied to the substrate electrode have a same frequency, which same frequency is lower than a frequency of the RF power for plasma generation. A plurality of filters is included, to perform a variety of filtering.

Abstract: A power window device for use in a vehicle for raising and lowering each window glass. The power window device includes a drive unit for each door operable for raising and lowering the associated window glass. Each drive unit includes an EEPROM for retaining mounting position information of the position in the vehicle at which the window glass driven by the associated drive unit is located. A processor in each drive unit retrieves steering wheel position information of whether the steering wheel is located in the right or left side of the vehicle. The processor recognizes the position in the vehicle at which the associated drive unit is installed based on the mounting position information and the steering wheel information. This enables the drive unit to be used for both right hand and left hand drive vehicles.

Abstract: This invention relates to DNA encoding a novel enzyme having activity of synthesizing D-serine from formaldehyde and glycine, recombinant DNA constructed by integrating such DNA into a vector, a transformant transformed with the recombinant DNA, and a method for producing D-serine from formaldehyde and glycine with the use of the enzyme.

Abstract: The present invention provides a plasma processing apparatus or a plasma processing method that can etch a multilayer film structure for constituting a gate structure with high accuracy and high efficiency. A plasma processing method of, on processing a sample on a sample stage 112 in a depressurized discharge room 117, etching a multilayer film (including a high-k and a metal gate) at 0.1 Pa or less and with the sample stage 112 temperature-regulated by using a pressure gauge 133 to be used for pressure regulation and connected to the processing room and a main pump for exhaustion 130.

Abstract: The invention provides a method for subjecting laminated thin films disposed below a photoresist mask pattern to plasma processing, wherein the roughness on the side walls of the formed pattern is reduced, and the LER and LWR are reduced. When etching a material to be processed to form a gate electrode including thin films such as a gate insulating film 205, a conducting layer 204, a mask layer 203 and an antireflection film 202 laminated on a semiconductor substrate 206 and a photoresist mask pattern 201 disposed on the antireflection film, prior to etching the mask pattern 201, plasma is generated from nitrogen gas or a mixed gas including nitrogen gas and deposition gas to subject the mask pattern 201 to a plasma curing process so as to reduce the roughness on the surface and side walls of the mask pattern 201, and then the laminated thin films 202, 203 and 204 disposed below the mask pattern 201 are subjected to a plasma etching process.

Abstract: A mold capable of preventing deterioration of the mold even when a material for spherical members is harder than that for the mold, and capable of aligning the center axis between an insert member and a body member thereof with high accuracy even when a pressure of resin filling is applied. The mold has an insert member with a cavity surface, and a body member for supporting the insert member from outside via a plurality of spherical members. Tubular liners harder than the spherical members are provided between the body member and the spherical members and between the insert member and the spherical members.

Abstract: A plasma processing apparatus having a processing chamber connected to a vacuum exhauster so that its inside pressure can be reduced by the vacuum exhauster, a gas feed unit for supplying gas into the processing chamber, a substrate electrode provided in the processing chamber and on which a sample can be placed, an RF power supply connected through a matching circuit to the substrate electrode, plasma generating means for generating plasma within the processing chamber and a voltage waveform control circuit provided within the matching circuit or between the substrate electrode and the matching circuit to flatten the voltage waveform from the RF power supply.

Abstract: A motor controller is provided with: an estimated temperature calculating means that calculates an estimated temperature of a motor; and a control unit that can perform a driving control of the motor only when the estimated temperature is not larger than a predetermined value. A mode switching means switches the control unit and the estimated temperature calculating means between in a normal operation mode in which they can drive the motor and in a sleep mode in which electric power consumption thereof is smaller than in the normal operation mode in accordance with a predetermined condition while the motor is stationary. An activating means activates the estimated temperature calculating means in the sleep mode for a predetermined active time every time a predetermined sleep time is elapsed.

Abstract: A motor controller includes: a motor control part for driving and controlling a motor; an estimated temperature computing part for computing an estimated temperature of a winding of the motor; and a motor protecting part for protecting the motor from being burned when the estimated temperature becomes larger than a predetermined temperature. A temperature rise value of the estimated temperature is computed according to operating conditions of the motor at the time of passing electric current through the winding. This temperature rise value is added to an estimated temperature stored in the estimated temperature storing part to update the estimate temperature. To compute the temperature rise value, an optimum temperature rise value is computed by the use of a plurality of temperature-rise value computing expressions.

Abstract: A light guide body includes: at least a front end tapered portion including one end connectable to an optical fiber and the other end, the one end being thinner than the other end; a plurality of second taper portions, each including one end connectable to an optical fiber and the other end, the one end of the second taper portion being thinner than the other end of the second taper portion; and a main body connected to the other ends of the first and second taper portions. The front end tapered portion, the main body, and the second taper portions provide transmission of incident light with division between the one end of the front end tapered portion and the one ends of the second taper portions.

Abstract: A power window device for lowering and raising window glasses. A window switch is operated to move a corresponding window glass. A motor drives the window glass when the window switch is operated. An ECU is provided for each window glass to control the motor in accordance with the operation of the window switch. An engine switch shifts positions to drive an engine. A control signal generator generates a signal to validate or invalidate control of the ECU over the motor. A control circuit determines that a signal wire connecting the ECUs to the control signal generator is in an unexpected condition when a signal cannot be received. The control circuit overrides the signals generated by the control signal generator when the signal wire is in an unexpected condition.

Abstract: The invention provides a plasma processing apparatus and a plasma processing method capable of controlling the voltage of the processing substrate with high accuracy, thereby enabling a highly accurate plasma processing. According to the invention, a voltage Vw of the processing substrate is measured using a processing substrate with a voltage probe prepared in advance, and based on a bias voltage Vesc applied to an electrostatic chuck mechanism 200 and a bias current Iesc flowing through the electrostatic chuck mechanism 200, a capacity component Cesc which is an impedance representing the electric property of the electrostatic chuck mechanism 200 is computed numerically. Then, based on a predetermined expression, the voltage Vw of the processing substrate 102 is estimated using the bias voltage Vesc of the processing substrate 102 to be measured, the bias current Iesc flowing through the electrostatic chuck mechanism 200 and the capacity component Cesc which is the impedance acquired in advance.