Abstract: A liquid circulation system includes an inkjet head formed with a common ink flow passage, an ink cartridge, a supply flow passage through which ink is supplied from the ink cartridge to an inlet of the common ink flow passage, a return flow passage through which the ink is returned from the outlet of the common ink flow passage to the ink cartridge, a tube pump sending the ink in the supply flow passage, a tube pump sending the ink in the return flow passage, a pressurization bellows unit pressurizing the ink in the supply flow passage, a pressure reduction bellows unit depressurizing the ink in the return flow passage, a pressurization regulator maintaining the inlet being a center value “+?” of a designated head value, and a differential pressure regulator by which a differential pressure of the ink between the inlet and the outlet is maintained to be “2?”.

Abstract: An organic light emitting device includes a first electrode and a second electrode, an organic layer including a light emitting layer between the first electrode and the second electrode, and an insulating film covering a rim of the first electrode from a surface thereof to a side surface thereof, and having an internal wall surface being in contact with the organic layer, and one or more corner sections in the internal wall surface with a ridge line thereof in parallel with the surface of the first electrode.

Abstract: A display unit includes, on a substrate, a plurality of organic EL devices, and an insulating film provided in an inter-device region between the plurality of organic EL devices, the insulating film including a groove in a position between the organic EL devices adjacent to each other.

Abstract: A laminated structure which can reduce defect by preventing deposition failure or holes of an insulating film, manufacturing method, and a display unit that employ same are provided. The laminated structure as an anode for organic light-emitting devices is provided on a flat surface of a substrate. In the laminated structure, an adhesive layer made of ITO, a reflective layer made of silver or an alloy containing silver, and a barrier layer made of ITO are layered in this order from the substrate side. A cross sectional shape of the laminated structure in the laminated direction is a forward tapered shape. A sidewall face of the adhesive layer, the reflective layer, and the barrier layer is totally covered by an insulating film, and deposition failure or holes of the insulating film is prevented. A taper angle made by the sidewall face and the flat surface is preferably from about 10° to about 70°.

Abstract: An ink circulation system includes: an ink-jet head in which a shared ink flowing route is formed, an ink tank, a supply flowing route for supplying ink from the ink tank to the shared ink flowing route, a reflux flowing rout for refluxing the ink from the shared ink flowing route to the ink tank, and a differential pressure generating unit for generating a differential pressure in the ink tank. The differential pressure generating unit is equipped with an impeller placed inside the ink tank, and a drive unit placed outside the ink tank. Then, the drive unit operates to turn the impeller, by means of remote driving, for generating a differential pressure between a supply port of the supply flowing route and a reflux port of the reflux flowing route so as to circulate the ink through the ink flowing route.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: Provided is a polarizing element, which is made into an assembly of metal elements by utilizing the fact that the plasmon resonance wavelengths of metal elements are different for the polarization direction of a light to irradiate the metal elements. The sum of the geometrically sectional areas of the metal elements in a plane substantially normal to the propagation direction of the irradiating light is smaller than the area of the irradiated region of the light, and the sum of the absorbing sectional areas of the metal elements in the plasmon resonance wavelengths is five times or more as large as the area of the irradiated region.

Abstract: A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit (1), wherein a plurality of organic EL devices (3B), (3G), and (3R), in which a function layer (6) including a light emitting layer (11) is sandwiched between a lower electrode (4) made of a light reflective material and a semi-transmissive upper electrode (7), and which has a resonator structure in which light h emitted in the light emitting layer (11) is resonated using a space between the lower electrode (4) and the upper electrode (7) as a resonant section (15) and is extracted from the upper electrode (7) side are arranged on a substrate (2).

Abstract: Disclosed is a semiconductor device comprising a p-type SiC semiconductor and an ohmic electrode having an Ni/Al laminated structure provided on the p-type SiC semiconductor. The semiconductor device simultaneously has improved contact resistance and surface roughness in the ohmic electrode. The semiconductor device comprises an ohmic electrode (18) comprising a nickel (Ni) layer (21), a titanium (Ti) layer (22), and an aluminum (Al) layer (23) stacked in that order on a p-type silicon carbide semiconductor region (13). The ohmic electrode (18) comprises 14 to 47 atomic % of a nickel element, 5 to 12 atomic % of titanium element, and 35 to 74 atomic % of an aluminum element, provided that the atomic ratio of the nickel element to the titanium element is 1 to 11.

Abstract: Disclosed is a bipolar semiconductor device which is capable of reducing the surface state density of a bipolar transistor and increasing the current gain of the transistor, thereby improving the transistor performance. A bipolar semiconductor device (100) has a surface protective film (30) on the surface of a semiconductor element. The surface protective film is composed of a thermal oxide film (31) formed on the surface of the semiconductor element, and a deposited oxide film (32) formed on the thermal oxide film. The deposited oxide film contains at least one of hydrogen element and nitrogen element in an amount of not less than 1018 cm?3.

Abstract: A display unit capable of being simply designed and manufactured by using more simplified light emitting device structure while capable of high definition display and display with superior color reproducibility and a manufacturing method thereof are provided. The display unit is a display unit (1), wherein a plurality of organic EL devices (3B), (3G), and (3R), in which a function layer (6) including a light emitting layer (11) is sandwiched between a lower electrode (4) made of a light reflective material and a semi-transmissive upper electrode (7), and which has a resonator structure in which light h emitted in the light emitting layer (11) is resonated using a space between the lower electrode (4) and the upper electrode (7) as a resonant section (15) and is extracted from the upper electrode (7) side are arranged on a substrate (2).

Abstract: A polarizing glass includes shape-anisotropic metal particles oriented and dispersed in a glass substrate, the concentration of the metal particles having a distribution in which in the travel direction of light in which a polarizing function is exhibited, the concentration is substantially zero near one of the surfaces of the glass substrate and near the other surface, gradually increases from one of the surfaces of the glass substrate to the other surface, becomes a value within a predetermined range in the glass substrate, and then gradually decreases toward the other surface.

Abstract: A bipolar semiconductor device includes a collector region that is an n-type low-resistance layer formed in one surface of a semiconductor crystal substrate, an n-type first high-resistance region on the collector region, a p-type base region on the first high-resistance region, an n-type low-resistance emitter region that is formed in another surface of the semiconductor crystal substrate, an n-type second high-resistance region between the emitter region and the base region so as to contact the emitter region, an n-type recombination suppressing region around the second high-resistance region so as to adjoin the second high-resistance region, and a p-type low-resistance base contact region which is provided so as to adjoin the recombination suppressing region, and which contacts the base region. Each of doping concentrations of the second high-resistance region and the recombination suppressing region is equal to or lower than 1×1017 cm?3.

Abstract: A method for manufacturing a junction semiconductor device having a drain region including a low-resistance layer of a first conductive type formed on one surface of a semiconductor crystal, a source region including a low-resistance layer of a first conductive type formed on the other surface of the semiconductor crystal, a gate region of a second conductive type formed on the periphery of the source region, a high-resistance layer of a first conductive type between the source region and the drain region, and a recombination-inhibiting semiconductor layer of a second conductive type provided in the vicinity of the surface of the semiconductor crystal between the gate region and the source region.

Abstract: Provided is a polarizing element, which is made into an assembly of metal elements by utilizing the fact that the plasmon resonance wavelengths of metal elements are different for the polarization direction of a light to irradiate the metal elements. The sum of the geometrically sectional areas of the metal elements in a plane substantially normal to the propagation direction of the irradiating light is smaller than the area of the irradiated region of the light, and the sum of the absorbing sectional areas of the metal elements in the plasmon resonance wavelengths is five times or more as large as the area of the irradiated region.

Abstract: A polarizing glass includes shape-anisotropic metal particles oriented and dispersed in a glass substrate, the concentration of the metal particles having a distribution in which in the travel direction of light in which a polarizing function is exhibited, the concentration is substantially zero near one of the surfaces of the glass substrate and near the other surface, gradually increases from one of the surfaces of the glass substrate to the other surface, becomes a value within a predetermined range in the glass substrate, and then gradually decreases toward the other surface.

Abstract: A liquid discharge apparatus includes a nozzle, a pressure chamber, a liquid supply chamber, a liquid supply passage, and a fluid resistance changing mechanism. A liquid pressure in the pressure chamber is configured to be changed to discharge liquid from the nozzle. The liquid supply passage extends in a connecting direction to connect the liquid supply chamber and the pressure chamber. The fluid resistance changing mechanism is configured to change a fluid resistance of the liquid supply passage.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.

Abstract: Disclosed is a display apparatus, and method of making same, including a plurality of lower electrodes patterned on a substrate on the basis of each pixel, an auxiliary wiring composed of the same layer as the lower electrodes and arranged in the state of being insulated from the lower electrodes, an insulating film formed on the substrate and provided with pixel openings for exposing central portions of the lower electrodes and connection holes reaching the auxiliary wiring, organic layers so patterned as to cover bottom portions of the pixel openings and to have end portions partly overlapping on each other between the adjacent pixels, and an upper electrode so formed as to cover the organic layers and to be connected to the auxiliary wiring through the connection holes between the organic layers.

Abstract: A method for manufacturing an ion implantation mask is disclosed which includes the steps of: forming an oxide film as a protective film over the entire surface of a semiconductor substrate; forming a thin metal film over the oxide film; and forming an ion-inhibiting layer composed of an ion-inhibiting metal over the thin metal film. The obtained ion implantation mask is used to form a deeper selectively electroconductive region.