Abstract: There are disclosed an optical filtering module and various optical devices using the filtering module. The optical filtering module has an optical filter for transmitting, attenuating or reflecting light having a certain wavelength range, a first optical system having an optical fiber for guiding light to be transferred to the optical filter, a second optical system having an optical fiber for guiding light transferred from the optical filter, the second optical system being opposingly arranged to the first optical system while interposing the optical filter therebetween and an outer cylindrically shaped glass holder for holding therein the optical filter, the first optical system and the second optical system secured thereto.

Abstract: A method of manufacturing a laminated structure capable of being patterned into a favorable shape by preventing side etching is provided. After an adhesive layer made of ITO or the like, a reflective layer made of silver or an alloy including silver, and a barrier layer made of ITO or the like are laminated in order on a substrate with a planarizing layer which is a base layer in between, a mask is formed on the barrier layer, and the adhesive layer, the reflective layer and the barrier layer are etched at once by using the mask to form a laminated structure. As an etching gas, for example, a gas including methane (CH4) is preferable. The laminated structure is used as an anode, and an insulating film, an organic layer including a light-emitting layer and a common electrode as a cathode are laminated in order on the laminated structure so as to form an organic light-emitting device. The laminated structure can be used as a reflective electrode, a reflective film or wiring of a liquid crystal display.

Abstract: A laminated structure which can reduce defect by preventing deposition failure or holes of an insulating film, manufacturing method, and a display unit that employ same are provided. The laminated structure as an anode for organic light-emitting devices is provided on a flat surface of a substrate. In the laminated structure, an adhesive layer made of ITO, a reflective layer made of silver or an alloy containing silver, and a barrier layer made of ITO are layered in this order from the substrate side. A cross sectional shape of the laminated structure in the laminated direction is a forward tapered shape. A sidewall face of the adhesive layer, the reflective layer, and the barrier layer is totally covered by an insulating film, and deposition failure or holes of the insulating film is prevented. A taper angle made by the sidewall face and the flat surface is preferably from about 10° to about 70°.

Abstract: A circuit device includes a substrate, a semiconductor chip mounted on the substrate, and a sealing layer for sealing the semiconductor chip to cover the semiconductor chip. The sealing layer includes a silicone-based material that has a thixotropic index from 2 to 6 and an elastic coefficient of 1 to 50 MPa. A shielding member is attached to the substrate and covers the sealing layer.

Abstract: Disclosed is a display apparatus including a plurality of lower electrodes patterned on a substrate on the basis of each pixel, an auxiliary wiring composed of the same layer as the lower electrodes and arranged in the state of being insulated from the lower electrodes, an insulating film formed on the substrate and provided with pixel openings for exposing central portions of the lower electrodes and connection holes reaching the auxiliary wiring, organic layers so patterned as to cover bottom portions of the pixel openings and to have end portions partly overlapping on each other between the adjacent pixels, and an upper electrode so formed as to cover the organic layers and to be connected to the auxiliary wiring through the connection holes between the organic layers. Also disclosed is a method of manufacturing the display apparatus.

Abstract: A groove portion to stay the adhesive agent penetrated into either one of closely contacted surfaces of the rod lens and the optical filter is formed, thereby, the penetration of the adhesive agent into the optical path is prevented.

Abstract: Thin film circuit elements including capacitors, resistors, and inductance elements are formed on a large substrate, and semiconductor chips are wire bonded to the substrate. The elements and chips are sealed by potting a sealing resin. The large substrate is divided into multiple stripe substrates by dicing and a thin-film conductive layer is sputtered on cut surfaces of the stripe substrates, thereby electrically connecting edges of lower conductive patterns to edges of upper conductive patterns exposed from side surfaces of the sealing resin through the thin-film conductive layer. A Ni foundation layer and Au layer are successively plated on a surface of the thin-film conductive layer to form edge electrodes on side surfaces of the stripe substrates and the stripe substrates are divided finely into individual alumina substrates.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: There are disclosed an optical filtering module and various optical devices using the filtering module. The optical filtering module has an optical filter for transmitting, attenuating or reflecting light having a certain wavelength range, a first optical system having an optical fiber for guiding light to be transferred to the optical filter, a second optical system having an optical fiber for guiding light transferred from the optical filter, the second optical system being opposingly arranged to the first optical system while interposing the optical filter therebetween and an outer cylindrically shaped glass holder for holding therein the optical filter, the first optical system and the second optical system secured thereto.

Abstract: A groove portion to stay the adhesive agent penetrated into either one of closely contacted surfaces of the rod lens and the optical filter is formed, thereby, the penetration of the adhesive agent into the optical path is prevented.

Abstract: An anti-overloading device for use in a restraint-camming apparatus in which the apparatus includes a linear guide for guiding an associated operating member in reciprocating movement and a restraint cam for reciprocating the operating member in its movement has a toggle assembly that which is fixed to the operating member. The toggle assembly comprises a “U”-shaped body, two support links that are rotatably connected to the free ends of opposite free ends of the toggle assembly body portion that engages the ends of the links, and a cam follower rotatably supported by the pin. The cam follower is engaged with the restraint cam to thereby put the restraint cam in a controlled restraint position between the cam follower and a counterpart cam follower roll that is fixed to the operating member. The toggle assembly permits the anti-loading structure can be reduced in size, still permitting the setting of an increased permissible load.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: The present invention provide a solar cell and a method of manufacturing the same which is high in the efficiency of energy conversion and improved in the durability while its production process requires not particularly high accuracy.

Abstract: A semiconductor memory device includes: a capacitor formed on a substrate and including a lower electrode, a dielectric film and an upper electrode; a selection transistor formed at the substrate; an electrically conductive plug for providing electrical connection between the selection transistor and the capacitor; and a diffusion barrier film provided between the electrically conductive plug and the lower electrode of the capacitor. The diffusion barrier film is a TaxSi1−xNy film or a HfxSi1−xNy film (where 0.2<x<1 and 0<y<1). The lower electrode includes an Ir film and an IrO2 film which are sequentially formed.

Abstract: A sensor element includes a light detecting section (2), a wiring section and a microlens section (7, 8). The light detecting section (2) is formed to be spaced from a substrate (1) to detect an incident light. The wiring section is composed of leg sections (3, 4) and outputting sections (11, 12) formed to be spaced from the substrate in a peripheral portion of the light detecting section. The wiring section connects the detecting result of the light detecting section to patterns on the substrate. The microlens section is formed to be spaced from the light detecting section to collect and output the incident light to the light detecting section. An area of the light detecting section is equal to or smaller than ¼ of an area of the sensor element. The sensor element may further include a reflecting film formed under the light detecting section to reflect the incident light which passes through the light detecting section.

Abstract: In a pressure sensor chip (10), an extension (42) is provided on a lower glass (40) and a signal receiving portion (50) of a conductive layer is formed from a surface (42A) of an extension (42) to an upper surface (30B) of an upper glass (30). Accordingly, the signal receiving portion (50) does not touch a circuit substrate when the pressure sensor chip (10) is mounted to the circuit substrate and the like, thereby preventing electric failure such as noise pickup of the signal receiving portion (50). Further, since the signal receiving portion (50) is formed by the conductive layer, no particular space for receiving electric potential from a diaphragm is necessary, thereby enabling size reduction of the pressure sensor chip (10). Since an anodic-bonding electrode (83) is disposed on a border (62) and is cut and removed in separating as the pressure sensor chip (10), visual check is not obstructed and contamination by being peeled-off can be prevented.

Abstract: In an electrostatic capacitance type transducer which has a substrate, a movable electrode confrontingly placed to the substrate in a movable manner through a space, a fixed electrode arranged on a detecting face confronting the movable electrode of the substrate, and a signal receiving portion which is conductive with the fixed electrode and derived from the detecting face of the substrate, the fixed electrode and the signal receiving portion are made of metals which are different with each other in their compositions. That is, the fixed electrode is made of metal which has a high corrosion resistance and is not likely to outbreak a hillock, and the signal receiving portion is made of metal which is easy for bonding. Alternatively, both the fixed electrode and the signal receiving portion are made of titanium.

Abstract: An object recognizing device for recognizing an object by transmitting laser light from a laser light source and receiving reflected light from the object by a light sensor, wherein the laser light source and the light sensor are disposed at a relative vertical distance of not less than 20 cm therebetween with a divergence angle .theta..sub.1 of the laser radiation emitted from the laser light source being set at a value of not more than 5 mrad and being smaller than an angle .alpha. formed between an optical axis of the laser light and an optical axis of the reflected light entering into the light sensor, and which is, therefore, capable of effectively recognizing any object even in an atmosphere containing aerosol, e.g., fog or haze.

Abstract: A thin ferroelectric film element comprises upper and lower thin electrode films and a thin ferroelectric film formed on a substrate, wherein the thin ferroelectric film comprises at least three layers in which at least one layer has a composition of constituent elements different from those of the other layers and a resistivity higher than that of the other layers, and at least two layers of the others are the same composition of constituent element.

Abstract: The present invention provides an electrostatic capacitance type transducer and a method for producing the same, with the ensured sufficient connecting strength and insulation between a movable electrode and a fixed electrode and smooth production. In the electrostatic capacitance type transducer having: a substrate; a movable electrode placed on the opposite side of a space from the substrate and having displacement in relation to the substrate; and a fixed electrode formed on a detecting face of the substrate which is opposite to the movable electrode, an insulation film is formed on the approximately whole surface, including the fixed electrode, of the detecting face of the substrate, in which the substrate and the movable electrode are connected through the insulation film to each other by means of the anode-contact.