Abstract: A TEG near the perimeter of a frame region is away from a TFT, which is disposed in a display region and is actually used for screen display. Hence, the characteristics of the TEG can change in a manner different from that in the characteristics of the TFT within the display region. Accordingly, provided is a display device that includes a TEG pattern disposed between the display region and a trench, and includes a dummy pixel circuit disposed between the display region and a barrier wall. The TEG pattern is outside the display region and is adjacent to at least the dummy pixel circuit.

Abstract: A display device includes: an underlayer, a first insulating film contacting an upper face of the underlayer, a semiconductor layer, a second insulating film, a first metal layer, a first resin layer, a first electrode, and a second resin layer, in order from a lower layer, wherein at least one of the underlayer, the first resin layer, and the second resin layer is a thin film layer having a maximum film thickness in a display region provided with a light-emitting element being thicker than a maximum film thickness in a frame region surrounding the display region.

Abstract: A first wiring line and a second wiring line are extended to an upper face of a resin substrate exposed from a slit formed in at least one layer of an inorganic insulating film, a first flattening film is provided within the slit which exposes the upper face of the resin substrate between the portions to which the first wiring line and the second wiring line are extended, and the first wiring line and the second wiring line are electrically connected to each other via a third wiring line provided between an end face of the first flattening film and the upper face of the resin substrate.

Abstract: A display device includes a display layer that includes a TFT layer, a light-emitting element layer, a sealing layer, a bank, and a touch panel layer. The touch panel layer includes a plurality of touch-panel-use lines electrically connecting a terminal section to a plurality of sensing sections configured to transfer measurements. The plurality of touch-panel-use lines resides on the sealing layer so as to intersect with the bank in a plan view of the display device. The plurality of touch-panel-use lines comprises a first touch-panel-use line and a second touch-panel-use line that are adjacent to each other, an interlayer insulation film being interposed between the first touch-panel-use line and the second touch-panel-use line in an intersection where the first touch-panel-use line and the second touch-panel-use line intersect with the bank.

Abstract: A method for manufacturing a display device includes a pixel circuit formed on a substrate, wherein a manufacturing process of the pixel circuit includes a patterning step of a metal film performed in the following procedures (a) to (e): (a) forming the metal film on the substrate; (b) forming a first resist pattern on the metal film by a photolithographic method; (c) etching the metal film with the first resist pattern to form a first metal pattern; (d) forming by the photolithographic method on the metal film formed in the first metal pattern, a second resist pattern including a pattern shape smaller than a pattern shape of the first resist pattern; and (e) etching the metal film with the second resist pattern to form a second metal pattern.

Abstract: A display device is provided with a display area and a frame area on a flexible substrate. The display area includes a transistor and a light-emitting element, and the frame area surrounds the display area. The display device includes: an upper inorganic insulating film, a first upper metal layer, a first resin layer, a protective layer, a second upper metal layer, a second resin layer, and a third resin layer provided in a stated order above a semiconductor layer of a transistor. In a display area, the protective layer covering a whole upper face of the first resin layer comes into contact with an upper wire included in the second upper metal layer.

Abstract: A first connection wire electrically connected to a first electrode via a first through-hole formed in a second flattening film, and a second connection wire electrically connected to the first connection wire via a second through-hole formed in a first flattening film are provided, and a second interlayer insulating film has a contact opening so as to pass through the second interlayer insulating film to overlap the first connection wire, and such that the edge of the contact opening surrounds the first through-hole and the second through-hole in a plan view.

Abstract: A display device includes: a resin substrate; a TFT layer; a bending portion; at least one inorganic film forming the TFT layer; an interlayer insulating film forming the TFT layer; and a plurality of wires forming the TFT layer, wherein the at least one inorganic film and the interlayer insulating film include an opening disposed at the bending portion, the at least one inorganic film includes a plurality of island-shaped inorganic films remaining in the opening, each of the plurality of wires overlaps a corresponding island-shaped inorganic film among the plurality of island-shaped inorganic films, and the display device includes a metal layer in a form of islands disposed between each of the plurality of wires and the corresponding island-shaped inorganic film overlapping each of the plurality of wires, the metal layer being in contact with each of the plurality of wires.

Abstract: In an organic electroluminescence (EL) display device, a display region and a first frame region are defined in a substantially circular shape or a substantially oval shape, and in a bending portion, an opening is formed in an inorganic layered film, and a frame flattening film is provided to fill the opening. An end portion of the opening on the display region side is formed along an arc of the first frame region on the bending portion side.

Abstract: An active matrix substrate includes a plurality of first contact holes extending through an inorganic insulating film, a first protection layer that is a silicon nitride film, and a second protection layer, a plurality of second contact holes extending through the inorganic insulating film and the second protection layer, a first transistor, and a second transistor. A channel region of the second transistor does not overlap the first protection layer.

Abstract: In a bending portion, a slit that exposes a resin substrate is formed in at least one inorganic insulating film, a first flattening film is provided so as to fill in the slit, each of a plurality of wiring lines is provided on the first flattening film and both end portions of the inorganic insulating film, the slit being formed at both end portions, a second flattening film is provided on each of the wiring lines, a plurality of conductive layers each having an island shape are provided on the second flattening film, and each of the wiring lines and a corresponding conductive layer are electrically connected via contact holes formed in the second flattening film.

Abstract: A display device includes a display area and a frame area surrounding the display area. The display device comprises a TFT layer, a light-emitting element layer, a sealing layer including a first inorganic sealing film, an organic sealing film, and a second inorganic sealing film, a bank coated with the first inorganic sealing film and the second inorganic sealing film, a touch panel function layer, and a plurality of touch panel wires running to intersect with the bank in planar view and connected to the touch panel function layer. The second inorganic sealing film includes a bank coating that coats an upper face of the bank, and a protrusion, in a clearance between neighboring two of the plurality of touch panel wires, protrudes from the bank coating toward the display area or away from the display area.

Abstract: There are provided wires in a frame area. The wires run parallel to each other in a direction crossing a direction in which a bending portion is extended. An inorganic insulating film has an opening therethrough in the bending portion. A top face of a resin substrate is exposed in the opening. The wires are provided on the inorganic insulating film and on the top face of the resin substrate exposed in the opening. In the opening, the top face of the resin substrate and an end face of the inorganic insulating film make a smaller angle below between the wires than below the wires.

Abstract: A TFT includes an oxide semiconductor layer including a conductive region electrically connected to a source electrode, a conductive region electrically connected to a drain electrode, a channel region being an oxide semiconductor region that overlaps a gate electrode, and at least one resistive region being an oxide semiconductor region provided between the channel region and a conductive region adjacent to the channel region.

Abstract: An electrode contact structure includes a first inorganic insulating film, a first electrode formed on the first inorganic insulating film, a second inorganic insulating film formed on the first inorganic insulating film and the first electrode to cover the first electrode, a second electrode formed on the second inorganic insulating film, a third inorganic insulating film formed on the second inorganic insulating film and the second electrode to cover the second electrode, and a third electrode configured to cover a contact hole formed in the third inorganic insulating film and the second inorganic insulating film, and electrically connect to each of the first electrode and the second electrode exposed in the contact hole.

Abstract: In a state overlapping a region surrounded by a pair of first wiring lines adjacent to each other among a plurality of first wiring lines extending in parallel to each other and formed by a first metal film, and a pair of third wiring lines among the plurality of third wiring lines extending in parallel to each other in a direction intersecting each of the plurality of first wiring lines, a first metal layer formed by the first metal film is provided in an island shape along the pair of third wiring lines adjacent to each other.

Abstract: A TEG near the perimeter of a frame region is away from a TFT, which is disposed in a display region and is actually used for screen display. Hence, the characteristics of the TEG can change in a manner different from that in the characteristics of the TFT within the display region. Accordingly, provided is a display device that includes a TEG pattern disposed between the display region and a trench, and includes a dummy pixel circuit disposed between the display region and a barrier wall. The TEG pattern is outside the display region and is adjacent to at least the dummy pixel circuit.

Abstract: In a method for manufacturing an active matrix substrate, forming of an underlayer inorganic insulating film includes applying a resist onto the underlayer inorganic insulating film, performing an ashing process of forming a surface having irregularities on a surface of the resist by a first ashing process, and, after the ashing process has been performed, roughening a surface of the underlayer inorganic insulating film by performing a second ashing process and an etching process on the underlayer inorganic insulating film. When forming a semiconductor film, a surface of at least a part of the semiconductor film is roughened following a rough surface of the underlayer inorganic insulating film.

Abstract: A display device is provided with a display area and a frame area on a flexible substrate. The display area includes a transistor and a light-emitting element, and the frame area surrounds the display area. The display device includes: an upper inorganic insulating film, a first upper metal layer, a first resin layer, a protective layer, a second upper metal layer, a second resin layer, and a third resin layer provided in a stated order above a semiconductor layer of a transistor. In a display area, the protective layer covering a whole upper face of the first resin layer comes into contact with an upper wire included in the second upper metal layer.

Abstract: First overlying wires are provided between a display area and a bending portion, extending parallel to each other in a direction crossing the direction in which the bending portion extends. Underlying wires are provided between a first resin layer and a second resin layer on a resin substrate, extending across a slit and parallel to each other in a direction crossing the direction in which the bending portion extends. The first overlying wires are electrically connected respectively to the underlying wires via first contact holes formed through the second resin layer and inorganic insulation films.