Abstract: Disclosed is a method for forming a resist pattern including, in the following order, irradiating a part of a resist film containing a resist material with a first radiation, baking the resist film, irradiating the entire region including the part irradiated with the first radiation and other parts in the resist film with a second radiation in a batch, and forming a resist pattern by development for removing a part of the resist film.

Abstract: A method of microfabrication includes depositing a photoresist film on a working surface of a semiconductor wafer, the photoresist film being sensitive to extreme ultraviolet radiation; exposing the photoresist film to a pattern of extreme ultraviolet radiation; performing a hybrid develop of the photoresist film. The hybrid develop includes executing a first development process to remove a first portion of the photoresist film; stopping the development of the photoresist film after the first development process, the photo resist film including a structure having a first critical dimension larger than a target critical dimension after the stopping; and after stopping the development, executing a second development process to remove a second portion of the photoresist film and shrinking the critical dimension of the structure from the first critical dimension to a second critical dimension that is less than the first critical dimension.

Abstract: Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitiated methods for producing photoresist structured.

Abstract: A method of simulating a resist pattern according to an exemplary embodiment includes a step (A) of calculating a latent image of a concentration of an active species in a resist film that has been radiated by a radioactive ray along a target pattern with respect to a radiation position of the radioactive ray, a step (B) of calculating a change rate of the concentration with respect to the radiation position at an edge of the target pattern on the basis of the latent image, a step (C) of calculating a probabilistic variation at the edge of the target pattern, and a step (D) of calculating a variation in pattern edge roughness from the change rate of the concentration and the probabilistic variation.

Abstract: Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

Abstract: Latent photoinitiator compounds are described, as well as compositions containing such compounds and their uses in photoinitiated methods for producing photoresist structures.

Abstract: A light source device includes a plurality of laser modules and a beam combiner. Each laser module includes a first laser diode configured to emit a first laser beam and a second laser diode configured to emit a second laser beam. The beam combiner has a first dichroic mirror region and a second dichroic mirror region. The first dichroic mirror region is configured to transmit the first laser beam going out from the first laser module, and to reflect the second laser beam going out from the second laser module. The second dichroic mirror region configured to transmit the second laser beam going out from the first laser module, and to reflect the first laser beam going out from the second laser module.

Abstract: A patterning method is provided in which a light-sensitive layer is formed, and a target resolution is defined for a pattern to be formed in a target layer. Based on a reference dose and reference LWR that results from a single patterning exposure at an EUV wavelength, the target resolution and reference dose, the light-sensitive layer is subjected to at least two radiation exposures including an EUV patterning exposure at a dose selected to be less than the reference dose and within 15 mJ/cm2-200 mJ/cm2, and a flood exposure at a wavelength of 200 nm-420 nm and a dose of 0.5 J/cm2-20 J/cm2. The light-sensitive layer is then developed to form a mask pattern, which is used to etch the pattern into the target layer with the target resolution and a LWR less than or approximately equal to the reference LWR and ?5 nm.

Abstract: A light source device includes a plurality of laser modules and a beam combiner. Each laser module includes a first laser diode configured to emit a first laser beam and a second laser diode configured to emit a second laser beam. The beam combiner has a first dichroic mirror region and a second dichroic mirror region. The first dichroic mirror region is configured to transmit the first laser beam going out from the first laser module, and to reflect the second laser beam going out from the second laser module. The second dichroic mirror region configured to transmit the second laser beam going out from the first laser module, and to reflect the first laser beam going out from the second laser module.

Abstract: A light source device includes a substrate and a plurality of laser light sources. The laser light sources each include a submount mounted on the substrate, and a semiconductor laser element mounted on the submount. The laser light sources are individually and independently disposed on the substrate. The laser light sources disposed adjacent to each other and emitting light having an identical wavelength band differ from each other in thermal resistance at a region between the semiconductor laser element and the substrate.

Abstract: Substrate processing techniques to alleviate missing contact holes, scummed contact holes and scummed caused bridging are disclosed. In one embodiment, electromagnetic radiation (EMR) absorbing molecules are utilized in a process that uses an initial patterned exposure followed by a flood exposure. In one embodiment, a Photo-Sensitized Chemically-Amplified Resist (PSCAR) resist process is utilized to form contact holes in which an initial exposure and develop process is performed followed by a flood exposure and a second develop process. In another embodiment, a process is utilized in which precursors of EMR absorbing molecules are incorporated into a layer underlying the resist layer. Thus, enhanced formation of EMR absorbing molecules will result at the interface of the resist layer and the underlying layer.

Abstract: A light source device includes a plurality of laser modules and a beam combiner. Each laser module includes a first laser diode configured to emit a first laser beam and a second laser diode configured to emit a second laser beam. The beam combiner has a first dichroic mirror region and a second dichroic mirror region. The first dichroic mirror region is configured to transmit the first laser beam going out from the first laser module, and to reflect the second laser beam going out from the second laser module. The second dichroic mirror region configured to transmit the second laser beam going out from the first laser module, and to reflect the first laser beam going out from the second laser module.

Abstract: An optical processing apparatus includes: a housing; a stage; and a light irradiation unit configured to cause a light source unit to emit light so as to form a strip-like irradiation area extending over an area wider than a width of a substrate in a right and left direction. The stage and the light irradiation unit are moved by a moving mechanism relatively to each other in a back and forth direction. Light emitted from the light irradiation unit is deviated by a light-path changing unit from a relative movement area of a substrate. When a substrate is relatively moved below the light irradiation unit without the intension of being subjected to a light irradiation process, a control unit outputs a control signal such that an irradiation area is not formed on a surface of the substrate by the light-path changing unit, while the light source unit emitting light.

Abstract: There is provided a resist composition including: a polymer component that is capable of being made soluble or insoluble in a developer by an action of an acid; an acid-generating agent configured to generate the acid by an exposure; and a quencher having a basicity for the acid, wherein, with respect to a first radiation having a wavelength of 300 nm or less and a second radiation having a wavelength of more than 300 nm, at least one of the acid-generating agent and the quencher has a light absorption wavelength, which is shifted so as to absorb the second radiation when irradiated with the first radiation and not irradiated with the second radiation, is decomposed when irradiated with the first radiation and then irradiated with second irradiation, and is not decomposed when not irradiated with the first irradiation and irradiated with the second radiation.

Abstract: A method of simulating a resist pattern according to an exemplary embodiment includes a step (A) of calculating a latent image of a concentration of an active species in a resist film that has been radiated by a radioactive ray along a target pattern with respect to a radiation position of the radioactive ray, a step (B) of calculating a change rate of the concentration with respect to the radiation position at an edge of the target pattern on the basis of the latent image, a step (C) of calculating a probabilistic variation at the edge of the target pattern, and a step (D) of calculating a variation in pattern edge roughness from the change rate of the concentration and the probabilistic variation.

Abstract: An exposure apparatus includes a stage on which a substrate is placed, a plurality of light irradiation units configured to emit light independently of each other to different positions in a right and left direction on a surface of the substrate, so as to form a strip-like irradiation area extending from one end of the surface of the substrate to the other end of the substrate, a stage moving mechanism configured to move the stage in a back and forth direction relative to the irradiation area, such that the whole surface of the substrate is exposed, and a light receiving unit configured move in the irradiation area between one end and the other end of the irradiation area in order to detect an illuminance distribution of the irradiation area in a longitudinal direction of the irradiation area.

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

Abstract: An illuminance distribution response amount as the change amount of the illuminance distribution pattern, associating the position in the irradiation region in the lengthwise direction with the change amount of the illuminance with respect to the change in the drive current, has previously been acquired and stored in a storage unit for each light-emitting block. There is provided an arithmetic processing unit that determines (estimates) a current command value of each of the light-emitting blocks based on a present current command value of each of the light-emitting blocks and the change amount of the illuminance distribution pattern of each light-emitting block in order to bring a present illuminance distribution pattern in the irradiation region in a lengthwise direction close to a target illuminance distribution pattern.

Abstract: A light source device includes a substrate and a plurality of laser light sources. The laser light sources each include a submount mounted on the substrate, and a semiconductor laser element mounted on the submount. The laser light sources are individually and independently disposed on the substrate. The laser light sources disposed adjacent to each other and emitting light having an identical wavelength band differ from each other in thermal resistance at a region between the semiconductor laser element and the substrate.

Abstract: Methods and systems for PS-CAR photoresist simulation are described. In an embodiment, a method includes determining by simulation at least one process parameter of a lithography process using a radiation-sensitive material. In such an embodiment, the radiation-sensitive material includes: a first light wavelength activation threshold that controls the generation of acid to a first acid concentration in the radiation-sensitive material and controls generation of photosensitizer molecules in the radiation-sensitive material, and a second light wavelength activation threshold that can excite the photosensitizer molecules in the radiation-sensitive material that results in the acid comprising a second acid concentration that is greater than the first acid concentration, the second light wavelength being different from the first light wavelength. In such an embodiment, the method also includes performing a lithography process using the previously-determined at least one process parameter.