Abstract: An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.

Abstract: The exposure apparatus of the invention includes a chamber 1 housing an exposure apparatus body 6 provided with an illumination optical system 2, a reticle 3, a projection lens 4 and a stage 5, gas supply units 7, 13, 17 and 18 that are disposed in the chamber 1 and supply gas taken in from the outside of the chamber 1 to the vicinities of the reticle 3 and stage 5 and a wet filter 10 which is disposed in the vicinity of a gas intake 8 from which the gas is supplied to the gas supply units 7, 13, 17 and 18 and forms a water film through which the gas passes.

Abstract: With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.

Abstract: With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.

Abstract: A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).

Abstract: A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film and a second interlayer insulating film formed of a low dielectric constant film on a substrate, forming via holes by using a first resist pattern formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern on the second interlayer insulating film. After the wet treatment before a second antireflection coating is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern.

Abstract: The exposure apparatus of the invention includes a chamber 1 housing an exposure apparatus body 6 provided with an illumination optical system 2, a reticle 3, a projection lens 4 and a stage 5, gas supply units 7, 13, 17 and 18 that are disposed in the chamber 1 and supply gas taken in from the outside of the chamber 1 to the vicinities of the reticle 3 and stage 5 and a wet filter 10 which is disposed in the vicinity of a gas intake 8 from which the gas is supplied to the gas supply units 7, 13, 17 and 18 and forms a water film through which the gas passes.

Abstract: A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).

Abstract: An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.

Abstract: With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.

Abstract: To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.

Abstract: A multi-layer wiring structure is formed by using a dual damascene method. First and second interlayer insulating films formed on a lower conductor layer are etched by using a first photo resist film as a mask to form a via hole. An anti-reflective coating is formed on the second interlayer insulating film such that a portion of the via hole is also filled therewith. A second photo resist film is formed on the anti-reflective coating such that a remaining portion of the via hole is also filled therewith. A development rate of an exposed portion of the second photo resist film is selected to be 250-700 nm/second. A wiring trench pattern is formed in the second photo resist film, and the anti-reflective coating and the second interlayer insulating film is etched by using the second photo resist film as a mask to form a wiring trench. The via hole and the wiring trench are filled with a conductive material to form a via and a wiring conductor.

Abstract: A method of manufacturing a semiconductor device having a damascene structure contains a process of forming a first interlayer insulating film (6) and a second interlayer insulating film (4) formed of a low dielectric-constant film on a substrate, forming via holes (9) by using a first resist pattern (1a) formed on the second interlayer insulating film, conducting an organic peeling treatment using organic peeling liquid containing amine components and then forming a second resist pattern (1b) on the second interlayer insulating film. After the wet treatment, before a second antireflection coating (2b) is coated so as to be located below the second resist pattern is coated, at least one of an annealing treatment, a plasma treatment, a UV treatment and an organic solvent treatment is carried out to remove amine components which inhibit the catalysis reaction of acid occurring in the resist at the light exposure, thereby preventing degradation of the resolution of the second resist pattern (1b).

Abstract: To provide a chemical amplification type positive photoresist composition suited to resist patterning of a substrate presenting surface step differences, a method for manufacturing the semiconductor device employing this composition, and a semiconductor substrate. In a method for manufacturing a semiconductor device, a resist film is formed using a chemical amplification type positive photoresist composition, comprised of a base resin and a basic compound added to the base resin at a rate of 1 to 100 mmol to 100 g of the base resin, on a substrate halving surface step differences and into which the organic removing solution is deposited or oozed, and a predetermined area of the resist film is exposed to light to form a resist pattern.

Abstract: A multi-layer wiring structure is formed by using a dual damascene method. First and second interlayer insulating films formed on a lower conductor layer are etched by using a first photo resist film as a mask to form a via hole. An anti-reflective coating is formed on the second interlayer insulating film such that a portion of the via hole is also filled therewith. A second photo resist film is formed on the anti-reflective coating such that a remaining portion of the via hole is also filled therewith. A development rate of an exposed portion of the second photo resist film is selected to be 250-700 nm/second. A wiring trench pattern is formed in the second photo resist film, and the anti-reflective coating and the second interlayer insulating film is etched by using the second photo resist film as a mask to form a wiring trench. The via hole and the wiring trench are filled with a conductive material to form a via and a wiring conductor.