Abstract: A pattern-forming method comprises applying a chemically amplified resist material on an antireflective film formed on a substrate to form a resist material film. The resist material film is patternwise exposed to ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to nonionizing radiation having a wavelength greater than the nonionizing radiation for the patternwise exposing and greater than 200 nm. The resist material film floodwise exposed is baked. The resist material film baked is developed with a developer solution. An extinction coefficient of the antireflective film for the nonionizing radiation employed for the floodwise exposing is no less than 0.1. The chemically amplified resist material comprises a base component and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure.

Abstract: A pattern-forming method comprises patternwise exposing a predetermined region of a resist material film made from a photosensitive resin composition comprising a chemically amplified resist material to a first radioactive ray that is ionizing radiation or nonionizing radiation having a wavelength of no greater than 400 nm. The resist material film patternwise exposed is floodwise exposed to a second radioactive ray that is nonionizing radiation having a wavelength greater than the wavelength of the nonionizing radiation for the patternwise exposing and greater than 200 nm. The chemically amplified resist material comprises a base component, and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. The generative component comprises a radiation-sensitive sensitizer generating agent. The radiation-sensitive sensitizer generating agent comprises a compound represented by formula (A).

Abstract: A resist-pattern-forming method comprises: patternwise exposing a predetermined region of a resist material film to a first radioactive ray that is ionizing radiation or nonionizing radiation; floodwise exposing the resist material film to a second radioactive ray that is nonionizing radiation; baking the resist material film; and developing the resist material film to form a resist pattern. The resist material film is made from a photosensitive resin composition comprising a chemically amplified resist material. The chemically amplified resist material comprises a base component that is capable of being made soluble or insoluble in a developer solution by an action of an acid and a generative component that is capable of generating a radiation-sensitive sensitizer and an acid upon an exposure. A van der Waals volume of the acid generated from the generative component is no less than 3.0×10?28 m3.

Abstract: A substrate treatment system for treating a substrate, includes: a treatment station in which a plurality of treatment apparatuses which treat the substrate are provided; an interface station which directly or indirectly delivers the substrate between an exposure apparatus which is provided outside the substrate treatment system and performs exposure of patterns on a resist film on the substrate, and the substrate treatment system; a light irradiation apparatus which performs post-exposure using UV light on the resist film on the substrate after the exposure of patterns is performed; and a post-exposure station which houses the light irradiation apparatus and is adjustable to a reduced pressure or inert gas atmosphere, wherein the post-exposure station is connected to the exposure apparatus directly or indirectly via a space which is adjustable to a reduced pressure or inert gas atmosphere.

Abstract: Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (PS-CAR) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. Also described is a metrology target formed using PS-CAR resist, and a substrate including a plurality of such metrology targets to facilitate patterning process control.

Abstract: A photosensitization chemical-amplification type resist material according to the present invention is used for a two-stage exposure lithography process, and contains (1) a developable base component and (2) a component generating a photosensitizer and an acid through exposure. Among three components consisting of (a) an acid-photosensitizer generator, (b) a photosensitizer precursor, and (c) a photoacid generator, the above component contains only the component (a), any two components, or all of the components (a) to (c).

Abstract: The present disclosure relates to a light source device. The light source device includes: a semiconductor laser device having a heat dissipation face; a heat dissipation member in contact with a light emission side of the semiconductor laser device out of the heat dissipation face, the heat dissipation member having a window that emits light from the semiconductor laser device, and a wind-blocking tube provided inside the window.

Abstract: A technique which, in forming a resist pattern on a wafer, can achieve high resolution and high in-plane uniformity of pattern line width. After forming a resist film on a wafer W and subsequently performing pattern exposure by means of a pattern exposure apparatus, the entire pattern exposure area is exposed by using a flood exposure apparatus. During the flood exposure, the exposure amount is adjusted depending on the exposure position on the wafer based on information on the in-plane distribution of the line width of a resist pattern, previously obtained from an inspection apparatus. Methods for adjusting the exposure amount include a method which adjusts the exposure amount while moving a strip-shaped irradiation area corresponding to the diameter of the wafer, a method which involves intermittently moving an irradiation area, corresponding to a shot area in the preceding pattern exposure, to adjust the exposure amount for each chip.

Abstract: Provided is a light source unit that includes: one or more kinds of phosphor; a substrate, on which the one or more kinds of phosphor is applied; a plurality of semiconductor laser elements arrayed at a predetermined interval in a package, wherein each of the semiconductor laser elements emits a laser light beam through a light emission region; and a first optical system that comprises a first lens system, a multiplexing optical member having a light entering surface and a light exiting surface, and a second lens system, wherein the first optical system directs the laser light beams emitted from the respective semiconductor laser elements toward the substrate, the first lens system receives the laser light beams emitted from the respective semiconductor laser elements directly without substantial parallelization of the respective received laser light beams, and condenses the received laser light beams on the light entering surface of the multiplexing optical member, the multiplexing optical member multiplexes

Abstract: A light source apparatus includes two or more light sources placed in one direction, and an array lens having two or more lenses, which corresponds to each of the light sources. In order to condense a light emitted from each of the lenses into one position, in a first lens in each of the lenses, an optical axis of the light source which corresponds to the first lens is shifted from an optical axis of said first lens in said one direction. The first lens is formed such that a length from the optical axis to one end of said first lens in the one direction is longer than a length from the optical axis to another end of the first lens in a direction which is opposite to the one direction.

Abstract: There is provided a light source apparatus and projector having the light source apparatus, said light source apparatus comprising: a laser module where first semiconductor laser(s) and second semiconductor laser(s) which emits a light of the wavelength different from that of said first semiconductor laser(s) are placed such that the emitting direction of each semiconductor laser is approximately the same and a short axis direction of a far field pattern of each semiconductor laser is approximately the same, and an optical multiplexing component which a light which exits from said laser module enters without being converged, wherein said first semiconductor laser(s) and said second semiconductor laser(s) are placed in linear symmetry in said short axis direction at the exit surface of said laser module.

Abstract: Methods for measuring photosensitizer concentrations in a photo-sensitized chemically-amplified resist (PS-CAR) patterning process are described. Measured photosensitizer concentrations can be used in feedback and feedforward control of the patterning process and subsequent processing steps. Also described is a metrology target formed using PS-CAR resist, and a substrate including a plurality of such metrology targets to facilitate patterning process control.

Abstract: The disclosure herein describes methods for Photosensitized Chemically Amplified Resist Chemicals (PS-CAR) to pattern light sensitive films on a semiconductor substrate. In one embodiment, a two-step exposure process may generate higher acid concentration regions within a photoresist layer. The PS-CAR chemicals may include photoacid generators (PAGs) and photosensitizer elements that enhance the decomposition of the PAGs into acid. The first exposure may be a patterned EUV exposure that generates an initial amount of acid and photosensitizer. The second exposure may be a non-EUV flood exposure that excites the photosensitizer which increases the acid generation rate where the photosensitizer is located on the substrate. The distribution of energy during the exposures may be optimized by using certain characteristics (e.g., thickness, index of refraction, doping) of the photoresist layer, an underlying layer, and/or an overlying layer.

Abstract: Provided is a light source unit that includes: one or more kinds of phosphor; a substrate, on which the one or more kinds of phosphor is applied; a plurality of semiconductor laser elements arrayed at a predetermined interval in a package, wherein each of the semiconductor laser elements emits a laser light beam through a light emission region; and a first optical system that comprises a first lens system, a multiplexing optical member having a light entering surface and a light exiting surface, and a second lens system, wherein the first optical system directs the laser light beams emitted from the respective semiconductor laser elements toward the substrate, the first lens system receives the laser light beams emitted from the respective semiconductor laser elements directly without substantial parallelization of the respective received laser light beams, and condenses the received laser light beams on the light entering surface of the multiplexing optical member, the multiplexing optical member multiplexes

Abstract: A light source unit, includes: a semiconductor laser device that emits laser light; a wheel substrate that has a light entering surface and a light exiting surface, and includes one or more phosphor-containing regions each contains one or more kinds of phosphor converts the laser light into light having a wavelength different from a wavelength of the laser light; a motor that faces the light entering surface of the wheel substrate, wherein the motor has a rotational shaft that supports a center of the wheel substrate, and is configured to rotate the wheel substrate; and a condensing optical system that faces the light exiting surface of the wheel substrate, and condenses light that has exited from the light exiting surface of the wheel substrate, the condensing optical system comprising a lens having an optical axis that substantially coincides with a reference axis of the light that has exited from the light exiting surface of the wheel substrate, wherein the lens is sized to cover the center of the wheel su

Abstract: The present disclosure relates to a light source device. The light source device includes: a semiconductor laser device having a heat dissipation face; a heat dissipation member in contact with a light emission side of the semiconductor laser device out of the heat dissipation face, the heat dissipation member having a window that emits light from the semiconductor laser device, and a wind-blocking tube provided inside the window.

Abstract: An overlapping margin of a second pattern for a first pattern is corrected for at least one of the first pattern and the second pattern (S50). Next, a relative distance between the first pattern and the second pattern after the overlapping margin is corrected is calculated (S60). Next, it is determined whether or not the relative distance satisfies a criterion (S70). Thus, the pattern can be verified under the consideration of the overlapping margin.

Abstract: An overlapping margin of a second pattern for a first pattern is corrected for at least one of the first pattern and the second pattern (S50). Next, a relative distance between the first pattern and the second pattern after the overlapping margin is corrected is calculated (S60). Next, it is determined whether or not the relative distance satisfies a criterion (S70). Thus, the pattern can be verified under the consideration of the overlapping margin.

Abstract: With the damascene process in which an interconnection is formed using a conventional chemically amplified positive photoresist composition, there arises a problem that the photoresist within the via hole (as well as in its vicinity) may remain even after the exposure and the development are carried out. The present invention relates to a chemically amplified resist composition comprising, at least, a photo acid generator, a quencher and a salt having a buffering function for an acid which is generated from the acid generator by irradiation, wherein the salt having the buffering function for the acid generated from the acid generator is a salt derived from a long chain alkylbenzenesulfonic acid or a long chain alkoxybenzenesulfonic acid and an organic amine that is a basic compound.

Abstract: An objective of this invention is to prevent resist poisoning and sensitivity deterioration in a chemically amplified resist. The chemically amplified resist comprises a base resin, a photoacid generator and a salt exhibiting buffer effect in the base resin.