Patents by Inventor Seiji Nagai

Seiji Nagai has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200175758
    Abstract: An isosurface mesh M is generated by extracting voxels having a certain CT value from volume data obtained by X-ray CT. A gradient vector g of a CT value is calculated at each vertex p of the isosurface mesh M. A plurality of sample points S are generated in positive and negative directions of the calculated gradient vector g. Gradient norms N of CT values at the respective generated sample points S are calculated. The vertex p of the isosurface mesh is moved and corrected to a sample point Sm having the maximum norm Nm calculated.
    Type: Application
    Filed: November 7, 2019
    Publication date: June 4, 2020
    Applicants: THE UNIVERSITY OF TOKYO, MITUTOYO CORPORATION
    Inventors: Yutaka OHTAKE, Yukie NAGAI, Tomonori GOTO, Seiji SASAKI, Masato KON
  • Publication number: 20200165610
    Abstract: The present invention provides a suppression type antisense oligonucleotide targeting TDP-43 mRNA, containing a nucleotide sequence complementary to a sequence consisting of at least 10 continuous nucleotides in a nucleotide sequence shown in any of SEQ ID NOs: 2-4, and a promotion type antisense oligonucleotide targeting TDP-43 mRNA, containing a nucleotide sequence complementary to a sequence consisting of at least 10 continuous nucleotides in a nucleotide sequence shown in SEQ ID NO: 5.
    Type: Application
    Filed: July 6, 2018
    Publication date: May 28, 2020
    Applicants: OSAKA UNIVERSITY, KNC LABORATORIES CO., LTD., NATIONAL UNIVERSITY CORPORATION NAGOYA UNIVERSITY
    Inventors: Yoshitaka NAGAI, Kazuhiro MAETA, Toshihide TAKEUCHI, Masahiro NEYA, Tsuyoshi FUJIHARA, Seiji MATSUDA, Gen SOBUE, Shinsuke ISHIGAKI, Kentaro SAHASHI
  • Publication number: 20200138802
    Abstract: Methods of further reducing cardiovascular risk in subjects with coronary artery disease on moderate intensity statins.
    Type: Application
    Filed: November 3, 2019
    Publication date: May 7, 2020
    Inventors: Yasushi Saito, Ryozo Nagai, Masunori Matsuzaki, Takeshi Kimura, Hiroaki Shimokawa, Hiroyuki Daida, Satoshi Iimuro, Hiroshi Iwata, Yukio Ozaki, Ichiro Sakuma, Yoshihisa Nakagawa, Kiyoshi Hibi, Takafumi Hiro, Yoshihiro Fukumoto, Seiji Hokimoto, Katsumi Miyauchi, Yasuo Ohashi
  • Patent number: 10570016
    Abstract: The present invention relates to carbon nanotubes that are excellent in dispersibility and a process for producing the carbon nanotubes. The carbon nanotubes according to the present invention each comprise a wall that comprises a parallel portion and a narrowed portion having a tube outer diameter that is not more than 90% of a tube outer diameter of the parallel portion. Thus, the carbon nanotubes are readily dispersible owing to a high abundance ratio of easily-breaking portions.
    Type: Grant
    Filed: November 12, 2015
    Date of Patent: February 25, 2020
    Assignee: TODA KOGYO CORP.
    Inventors: Wataru Oda, Kazushige Kawai, Tomohiro Honda, Seiji Okazaki, Norimichi Nagai, Tetsuro Toda
  • Publication number: 20190233950
    Abstract: A hydrogen generation system according to one aspect of the present disclosure comprises: a concentrator photovoltaic module including: a casing including a frame, and a bottom plate provided at the lower end of the frame, and a concentrator photovoltaic element disposed on the bottom plate; a hydrogen generation apparatus configured to generate hydrogen by electrolyzing water with electric power supplied from the concentrator photovoltaic module; and a heat exhauster mechanism configured to raise the temperature of the water using heat generated in the concentrator photovoltaic module.
    Type: Application
    Filed: July 25, 2017
    Publication date: August 1, 2019
    Inventors: Rui Mikami, Takashi Iwasaki, Makoto Inagaki, Youichi Nagai, Seiji Yamamoto
  • Patent number: 9691610
    Abstract: The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.
    Type: Grant
    Filed: June 3, 2014
    Date of Patent: June 27, 2017
    Assignee: TOYODA GOSEI CO., LTD
    Inventors: Shohei Kumegawa, Yasuhide Yakushi, Seiji Nagai, Miki Moriyama
  • Publication number: 20170081780
    Abstract: A method for producing a Group III nitride semiconductor single crystal, includes forming a mask layer on an underlayer, to thereby form a seed crystal in which a portion of the underlayer is covered with the mask layer and in which the remaining portion of the underlayer is not covered with the mask layer, etching the remaining portion, and growing a Group III nitride semiconductor single crystal on the seed crystal.
    Type: Application
    Filed: November 30, 2016
    Publication date: March 23, 2017
    Inventors: Seiji NAGAI, Miki MORIYAMA, Shohei KUMEGAWA, Shiro YAMAZAKI
  • Patent number: 9567693
    Abstract: The present invention provides a method for producing a Group III nitride semiconductor single crystal having excellent crystallinity, and a method for producing a GaN substrate having excellent crystallinity, the method including controlling melting back. Specifically, a mask layer is formed on a GaN substrate serving as a growth substrate. Then, a plurality of trenches which penetrate the mask layer and reach the GaN substrate are formed through photolithography. The obtained seed crystal and raw materials of a single crystal are fed to a crucible and subjected to treatment under pressurized and high temperature conditions. Portions of the GaN substrate exposed to the trenches undergo melting back with a flux. Through dissolution of the GaN substrate, the dimensions of the trenches increase, to provide large trenches. The GaN layer is grown from the surface of the mask layer as a starting point.
    Type: Grant
    Filed: February 7, 2013
    Date of Patent: February 14, 2017
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Seiji Nagai, Miki Moriyama, Shohei Kumegawa, Shiro Yamazaki
  • Patent number: 9388506
    Abstract: The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.
    Type: Grant
    Filed: June 14, 2013
    Date of Patent: July 12, 2016
    Assignee: Toyoda Gosei Co., Ltd.
    Inventors: Shiro Yamazaki, Seiji Nagai, Miki Moriyama
  • Patent number: 9358510
    Abstract: A planetary mixer includes frame-shaped blades configured to undergo planetary motion within a tank having a generally cylindrical inner surface and a plate-shaped bottom surface including corners formed with a curved face throughout an entire circumference of the bottom surface. Each of the blades has a vertical side portion extending along the inner surface of the tank and a bottom side portion extending along the bottom surface of the tank and connected at generally right angles to lower ends of the vertical side portion to form blade corners each formed with a curved face.
    Type: Grant
    Filed: May 16, 2013
    Date of Patent: June 7, 2016
    Assignee: INOUE MFG., INC.
    Inventors: Masakazu Inoue, Seiji Nagai, Tomoharu Kawahara
  • Patent number: 9346027
    Abstract: A planetary mixer has stirring blades that undergo planetary motion within a tank in close proximity to an inner wall of the tank for stirring solid/liquid type treatment materials received by the tank. Each of the stirring blades includes a vertical side portion having two slope faces slanting toward the inner wall of the tank, an edge face connecting outward front ends of the slope faces, and an inner face connecting inward front ends of the slope faces. The outward front ends are disposed closer to the tank inner wall than are the inward front ends, with a distance between the inward front ends being greater than a distance between the outward front ends. The inner face is formed in the shape of an arc having a center located at an intersection of a line interconnecting the inward front ends and centerline running through a center of the edge face.
    Type: Grant
    Filed: May 28, 2012
    Date of Patent: May 24, 2016
    Assignee: INOUE MFG., INC.
    Inventors: Masakazu Inoue, Seiji Nagai, Tomoharu Kawahara
  • Patent number: 9263258
    Abstract: Provided is a method for producing a Group III nitride-based compound semiconductor having an M-plane main surface. The method employs a sapphire substrate having a main surface which is inclined by 30° with respect to R-plane about a line of intersection Lsapph-AM formed by R-plane and A-plane perpendicular thereto. R-plane surfaces of the sapphire substrate are exposed, and a silicon dioxide mask is formed on the main surface of the substrate. AlN buffer layers are formed on the exposed R-plane surfaces. A GaN layer is formed on the AlN buffer layers. At an initial stage of GaN growth, the top surface of the sapphire substrate is entirely covered with the GaN layer through lateral growth.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: February 16, 2016
    Assignee: TOYODA GOSEI CO., LTD.
    Inventors: Seiji Nagai, Shiro Yamazaki, Takayuki Sato, Yasuhide Yakushi, Koji Okuno, Koichi Goshonoo
  • Patent number: 9153439
    Abstract: A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions.
    Type: Grant
    Filed: June 10, 2014
    Date of Patent: October 6, 2015
    Assignee: Toyoda Gosei Co., Ltd
    Inventors: Shohei Kumegawa, Yasuhide Yakushi, Seiji Nagai, Miki Moriyama
  • Publication number: 20150231579
    Abstract: A planetary mixer which is used for production steps of various products in chemistry, medical treatment, electronics, ceramics, medicines, foods, feed and the like, and in which flame-shaped stirring blades are allowed to perform planetary motion in a tank, by which solid/liquid type treatment materials are subjected to stirring, blending, mixing/kneading, kneading or the like and it is intended to prevent adhesion of materials to a vertical side portion of the flame-shaped stirring blades. The vertical side portion 22 of the frame-shaped stirring blades 20 is constituted to have a cross-sectional configuration which has two slope faces 25, 26 slanting toward an inner wall of the tank, an edge face 29 connecting outward front ends 28 of the slope faces, and an arcuate inner face 30 connecting inward front ends 27 of the slope faces.
    Type: Application
    Filed: May 28, 2012
    Publication date: August 20, 2015
    Applicant: INOUE MFG., INC.
    Inventors: Masakazu Inoue, Seiji Nagai, Tomoharu Kawahara
  • Publication number: 20140363954
    Abstract: A mask layer is formed on a Ga polarity surface of the GaN substrate as a growth substrate. Subsequently, a protective film PF is formed on a N polarity surface of the GaN substrate. Then, a plurality of concave portions is formed from the mask layer extending to the GaN substrate, to thereby form a seed crystal. The seed crystal is etched in a Na melt, and a plurality of concave portions having a facet plane exposed. The seed crystal and the raw materials are placed in a crucible, and the pressure and temperature inside the crucible are increased. Thus, a target GaN layer is grown in the upward direction on the surface of the mask layer and the lateral direction over the concave portions.
    Type: Application
    Filed: June 10, 2014
    Publication date: December 11, 2014
    Inventors: Shohei Kumegawa, Yasuhide Yakushi, Seiji Nagai, Miki Moriyama
  • Publication number: 20140360426
    Abstract: The present invention provides a method for producing a Group III nitride semiconductor crystal and a GaN substrate, in which the transfer of dislocation density or the occurrence of cracks can be certainly reduced on a growth substrate, and the Group III nitride semiconductor crystal can be easily separated from a seed crystal. A mask layer is formed on a GaN substrate, to thereby form an exposed portion of the GaN substrate, and an unexposed portion of the GaN substrate. Through a flux method, a GaN layer is formed on the exposed portions of the GaN substrate in a molten mixture containing at least Group III metal and Na. At that time, non-crystal portions containing the components of the molten mixture are formed on the mask layer so as to be covered with the GaN layer grown on the GaN substrate and the mask layer.
    Type: Application
    Filed: June 3, 2014
    Publication date: December 11, 2014
    Applicant: TOYODA GOSEI CO., LTD.
    Inventors: Shohei Kumegawa, Yasuhide Yakushi, Seiji Nagai, Miki Moriyama
  • Publication number: 20140010041
    Abstract: A planetary mixer includes frame-shaped blades configured to undergo planetary motion within a tank having a generally cylindrical inner surface and a plate-shaped bottom surface including corners formed with a curved face throughout an entire circumference of the bottom surface. Each of the blades has a vertical side portion extending along the inner surface of the tank and a bottom side portion extending along the bottom surface of the tank and connected at generally right angles to lower ends of the vertical side portion to form blade corners each formed with a curved face.
    Type: Application
    Filed: May 16, 2013
    Publication date: January 9, 2014
    Applicant: Inoue Mfg., Inc.
    Inventors: Masakazu INOUE, Seiji NAGAI, Tomoharu KAWAHARA
  • Publication number: 20140000509
    Abstract: The present invention provides a semiconductor crystal removal apparatus which realizes effective removal of a semiconductor crystal from a crucible through rapid melting of a solidified flux, and a method for producing a semiconductor crystal. The semiconductor crystal removal apparatus includes a crucible support for supporting a crucible so that the opening of the crucible is directed downward; a heater for heating the crucible supported on the crucible support; and a semiconductor crystal receiving net for receiving a semiconductor crystal falling from the opening of the crucible. The semiconductor crystal removal apparatus further includes a determination portion for determining removal of the semiconductor crystal on the basis of a change in weight through falling of the semiconductor crystal.
    Type: Application
    Filed: June 14, 2013
    Publication date: January 2, 2014
    Inventors: Shiro YAMAZAKI, Seiji NAGAI, Miki MORIYAMA
  • Patent number: 8507364
    Abstract: An object of the present invention is to realize, by the flux process, the production of a high-quality n-type semiconductor crystal having high concentration of electrons. The method of the invention for producing an n-type Group III nitride-based compound semiconductor by the flux process, the method including preparing a melt by melting at least a Group III element by use of a flux; supplying a nitrogen-containing gas to the melt; and growing an n-type Group III nitride-based compound semiconductor crystal on a seed crystal from the melt. In the method, carbon and germanium are dissolved in the melt, and germanium is incorporated as a donor into the semiconductor crystal, to thereby produce an n-type semiconductor crystal. The mole percentage of germanium to gallium in the melt is 0.05 mol % to 0.5 mol %, and the mole percentage of carbon to sodium is 0.1 mol % to 3.0 mol %.
    Type: Grant
    Filed: May 20, 2009
    Date of Patent: August 13, 2013
    Assignees: Toyoda Gosei Co., Ltd., NGK Insulators, Ltd., Osaka University
    Inventors: Seiji Nagai, Shiro Yamazaki, Yasuhide Yakushi, Takayuki Sato, Makoto Iwai, Katsuhiro Imai, Yusuke Mori, Yasuo Kitaoka
  • Patent number: 8501141
    Abstract: An object of the present invention is to effectively add Ge in the production of GaN through the Na flux method. In a crucible, a seed crystal substrate is placed such that one end of the substrate remains on the support base, whereby the seed crystal substrate remains tilted with respect to the bottom surface of the crucible, and gallium solid and germanium solid are placed in the space between the seed crystal substrate and the bottom surface of the crucible. Then, sodium solid is placed on the seed crystal substrate. Through employment of this arrangement, when a GaN crystal is grown on the seed crystal substrate through the Na flux method, germanium is dissolved in molten gallium before formation of a sodium-germanium alloy. Thus, the GaN crystal can be effectively doped with Ge.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: August 6, 2013
    Assignees: Toyoda Gosei Co., Ltd., NGK Insulators, Ltd., Osaka University
    Inventors: Takayuki Sato, Seiji Nagai, Makoto Iwai, Shuhei Higashihara, Yusuke Mori, Yasuo Kitaoka