Abstract: An example apparatus includes: a control chip; a plurality of memory chips stacked on the control chip, the plurality of memory chips including first and second memory chips; and a plurality of via conductors connected between the plurality of memory chips and the control chip. Each of the first and second memory chips is divided into a plurality of channels including a first channel. The plurality of via conductors include a first via conductor electrically connected between the first channel in the first memory chip and the control chip, and a second via conductor electrically connected between the first channel in the second memory chip and the control chip. The first and second memory chips substantially simultaneously output read data read from the first channel to the first and second via conductors, respectively.

Abstract: An apparatus that includes: a control chip; a plurality of memory chips stacked on the control chip, the plurality of memory chips including first and second memory chips; and a plurality of via conductors connected between the plurality of memory chips and the control chip. Each of the first and second memory chips is divided into a plurality of channels including a first channel. The plurality of via conductors include a first via conductor electrically connected between the first channel in the first memory chip and the control chip, and a second via conductor electrically connected between the first channel in the second memory chip and the control chip. The first and second memory chips substantially simultaneously output read data read from the first channel to the first and second via conductors, respectively.

Abstract: An apparatus that includes: a control chip; a plurality of memory chips stacked on the control chip, the plurality of memory chips including first and second memory chips; and a plurality of via conductors connected between the plurality of memory chips and the control chip. Each of the first and second memory chips is divided into a plurality of channels including a first channel. The plurality of via conductors include a first via conductor electrically connected between the first channel in the first memory chip and the control chip, and a second via conductor electrically connected between the first channel in the second memory chip and the control chip. The first and second memory chips substantially simultaneously output read data read from the first channel to the first and second via conductors, respectively.

Abstract: Apparatuses and methods of data transmission between semiconductor chips are described. An example apparatus includes: a data bus inversion (DBI) circuit that receives first, second and third input data in order, and further provides first, second and third output data, either with or without data bus inversion. The DBI circuit includes a first circuit that latches the first input data and the third input data; a second circuit that latches the second input data; a first DBI calculator circuit that performs first DBI calculation on the latched first input data and the latched second input data responsive to the first circuit latching the first input data and the second circuit latching the second input data, respectively; and a second DBI calculator circuit that performs second DBI calculation on the latched second data and the latched third input data responsive to the first circuit latching the third input data.

Abstract: Apparatuses and methods of data transmission between semiconductor chips are described. An example apparatus includes: a data bus inversion (DBI) circuit that receives first, second and third input data in order, and further provides first, second and third output data, either with or without data bus inversion. The DBI circuit includes a first circuit that latches the first input data and the third input data; a second circuit that latches the second input data; a first DBI calculator circuit that performs first DBI calculation on the latched first input data and the latched second input data responsive to the first circuit latching the first input data and the second circuit latching the second input data, respectively; and a second DBI calculator circuit that performs second DBI calculation on the latched second data and the latched third input data responsive to the first circuit latching the third input data.

Abstract: Apparatuses and methods for transmitting data between a plurality of chips are described.

Abstract: Apparatuses including a first-in first-out circuit are described. An example apparatus includes: a first-in first-out circuit including a first latch, a second latch and a logic circuit coupled in series. The first latch receives first data and latches the first data responsive to a first input pointer signal. The second latch receives the latched first data from the first latch and latches the received first data responsive to a second input pointer signal that has a different phase from the first input pointer signal and thus provides a second data. The logic circuit receives the second data and an output pointer signal and further provides an output data responsive to the output pointer signal.

Abstract: Apparatuses and methods of data transmission between semiconductor chips are described. An example apparatus includes: a data bus inversion (DBI) circuit that receives first, second and third input data in order, and further provides first, second and third output data, either with or without data bus inversion. The DBI circuit includes a first circuit that latches the first input data and the third input data; a second circuit that latches the second input data; a first DBI calculator circuit that performs first DBI calculation on the latched first input data and the latched second input data responsive to the first circuit latching the first input data and the second circuit latching the second input data, respectively; and a second DBI calculator circuit that performs second DBI calculation on the latched second data and the latched third input data responsive to the first circuit latching the third input data.

Abstract: Apparatuses and methods for transmitting data between a plurality of chips are described.

Abstract: Apparatuses and methods of data transmission between semiconductor chips are described. An example apparatus includes: a data bus inversion (DBI) circuit that receives first, second and third input data in order, and further provides first, second and third output data, either with or without data bus inversion. The DBI circuit includes a first circuit that latches the first input data and the third input data; a second circuit that latches the second input data; a first DBI calculator circuit that performs first DBI calculation on the latched first input data and the latched second input data responsive to the first circuit latching the first input data and the second circuit latching the second input data, respectively; and a second DBI calculator circuit that performs second DBI calculation on the latched second data and the latched third input data responsive to the first circuit latching the third input data.

Abstract: An example apparatus includes a first semiconductor chip and a second semiconductor chip; and a first via and a plurality of second vias coupling the first semiconductor chip and the second semiconductor chip. The first semiconductor chip provides a first timing signal to the first via and further provides first data responsive to the first timing signal to the plurality of second vias. The second semiconductor chip receives the first timing signal from the first via and the first data from the plurality of second vias and further provides the first data responsive to the first timing signal, when the first semiconductor chip is designated, and provides a second timing signal and further provides second data responsive to the second timing signal, when the second semiconductor chip is designated.

Abstract: Methods and apparatuses are provided for aligning read data in a stacked semiconductor device. An example apparatus includes a stacked semiconductor device comprising stacked first and second die. The stacked semiconductor device includes a first path having a first align (first die) and second align (second die) circuits for providing read data from the second die and a second path having a first replica align (first die) and second replica align (second die) circuits. During a timing align operation, a first control circuit sets the first align and replica align circuits to a first delay value based on a propagation delay of a clock signal through the second replica align circuit. After setting of the first delay value, a second control circuit sets the second align and replica align circuits to a second delay value based on a difference in propagation delays through the first and second replica align circuits.

Abstract: Apparatuses and methods for transmitting data between a plurality of chips are described.

Abstract: An example apparatus includes a first semiconductor chip and a second semiconductor chip; and a first via and a plurality of second vias coupling the first semiconductor chip and the second semiconductor chip. The first semiconductor chip provides a first timing signal to the first via and further provides first data responsive to the first timing signal to the plurality of second vias. The second semiconductor chip receives the first timing signal from the first via and the first data from the plurality of second vias and further provides the first data responsive to the first timing signal, when the first semiconductor chip is designated, and provides a second timing signal and further provides second data responsive to the second timing signal, when the second semiconductor chip is designated.

Abstract: Apparatuses and methods for transmitting data between a plurality of chips are described.

Abstract: An example apparatus includes a first semiconductor chip and a second semiconductor chip; and a first via and a plurality of second vias coupling the first semiconductor chip and the second semiconductor chip. The first semiconductor chip provides a first timing signal to the first via and further provides first data responsive to the first timing signal to the plurality of second vias. The second semiconductor chip receives the first timing signal from the first via and the first data from the plurality of second vias and further provides the first data responsive to the first timing signal, when the first semiconductor chip is designated, and provides a second timing signal and further provides second data responsive to the second timing signal, when the second semiconductor chip is designated.

Abstract: An example apparatus includes a first semiconductor chip and a second semiconductor chip; and a first via and a plurality of second vias coupling the first semiconductor chip and the second semiconductor chip. The first semiconductor chip provides a first timing signal to the first via and further provides first data responsive to the first timing signal to the plurality of second vias. The second semiconductor chip receives the first timing signal from the first via and the first data from the plurality of second vias and further provides the first data responsive to the first timing signal, when the first semiconductor chip is designated, and provides a second timing signal and further provides second data responsive to the second timing signal, when the second semiconductor chip is designated.

Abstract: Apparatuses and methods for transmitting data between a plurality of chips are described.

Abstract: A semiconductor device disclosed in this disclosure includes a first terminal formed above a first surface of a semiconductor substrate, a second terminal formed above a second surface of the semiconductor substrate opposite to the first surface, a first through substrate via (TSV) penetrating the semiconductor substrate, and a first-in first-out (FIFO) circuit, wherein the first TSV and the FIFO circuit are coupled in series between the first terminal and the second terminal.

Abstract: A semiconductor storage device is provided with a memory cell array comprising a plurality of word lines including word lines that are adjacent to one another; and a TRR address conversion unit that selects the word line in response to the input of an address signal indicating a first value while in a first operation mode and selects the word line in response to the input of an address signal indicating a first value while in a target row refresh mode. Due to the fact that address conversion is performed on the semiconductor storage device side in the present invention, it is sufficient for a control device to output, for example, the address of a word line having a high access count to the semiconductor storage device during a target row refresh operation. As a result, control of the target row refresh operation on the control device side is facilitated.