Abstract: A grain oriented electrical steel sheet reduces local exfoliation of insulating coating films and thus has excellent corrosion resistance and insulation properties. The grain oriented electrical steel sheet may be obtained by, assuming that a1 (?m) is a film thickness of the insulating coating at the floors of linear grooves and a2 (?m) is a film thickness of the insulating coating on a surface of the steel sheet at portions other than the linear grooves, controlling a1 and a2 to satisfy the following formulas (1) and (2): 0.3 ?m?a2?3.5 ?m??(1), and a1/a2?2.5??(2).

Abstract: A grain oriented electrical steel sheet keeps iron loss at a low level when assembled as an actual transformer and has excellent iron loss properties as an actual transformer, in which a film thickness a1 (?m) of insulating coating at the floors of linear grooves, a film thickness a2 (?m) of the insulating coating on a surface of the steel sheet at portions other than the linear grooves, and a depth a3 (?m) of the linear grooves are controlled to satisfy formulas (1) and (2): 0.3 ?m?a2?3.5 ?m??(1), and a2+a3?a1?15 ?m??(2).

Abstract: A method of manufacturing a grain oriented electrical steel sheet includes subjecting a steel slab to rolling to obtain a steel sheet, subjecting the steel sheet to decarburizing annealing, coating of an annealing separator mainly composed of MgO onto a surface of the steel sheet, and final annealing to obtain a grain oriented electrical steel sheet having at least 4.0 g/m2 of coating weight of forsterite coating formed on the surface of the steel sheet, 0.9 ?m or less of the average grain size of the forsterite coating, and at least 1.91 T of magnetic flux density B8; and linearly irradiating a surface of the grain oriented electrical steel sheet this obtained with a laser having wavelength of 0.2 ?m to 0.9 ?m in a direction intersecting the rolling direction of the steel sheet.

Abstract: A device reduces dust for safely preventing laser-irradiation capacity from decreasing due to contamination and reliably reducing iron loss of a grain oriented electrical steel sheet. The device improves iron loss properties of a grain oriented electrical steel sheet by irradiating its surface with laser to reduce iron loss, wherein, distance between a laser beam emission port and a laser irradiation point is L (mm); laser irradiation angle formed by a line linking the emission port and the irradiation point with respect to a direction vertical to the sheet is ? (°); and L?50, the emission port is positioned such that L and ? satisfy: 60?0.3L???60 when L?100 40?0.1L???60 when 100<L?400 ??60 when L>400.

Abstract: A grain oriented electrical steel sheet has linear grooves for magnetic domain refinement formed on a surface thereof and may reduce iron loss by using these linear grooves, where the proportion of those linear grooves having crystal grains directly beneath themselves, each crystal grain having an orientation deviating from the Goss orientation by 10° or more and a grain size of 5 ?m or more, is controlled to 20% or less, and secondary recrystallized grains are controlled to have an average ? angle of 2.0° or less, and each secondary recrystallized grain having a grain size of 10 mm or more is controlled to have an average ?-angle variation of 1° to 4°.

Abstract: A grain oriented electrical steel sheet has grooves on one surface of the steel sheet formed for magnetic domain refining, the steel sheet including a forsterite film and a tension coating on front and back surfaces of the steel sheet, wherein the tension coating is applied on a surface with the grooves in a coating amount A (g/m2) and is applied on a surface with no grooves in a coating amount B (g/m2), the coating amounts A and B satisfying (1) and (2): 3?A?8??(1); and 1.0<B/A?1.8??(2).

Abstract: A grain oriented electrical steel sheet that is subjected to magnetic domain refining treatment by electron beam irradiation and exhibits excellent low-noise properties when assembled as an actual transformer in which tension exerted on the steel sheet by the forsterite film is 2.0 MPa or higher both in a rolling direction and a direction transverse (perpendicular) to the rolling direction, and a ratio of an irradiation pitch in a thermal strain introduced region (B) to a spot diameter (A) on an electron beam irradiation surface satisfies 0.5?B/A?5.0.

Abstract: A grain oriented electrical steel sheet has a magnetic domain structure modified by strain introduction without a trace of treatment, in which noise generated when the grain oriented electrical steel sheet is used laminated on an iron core of a transformer is effectively reduced by: setting a magnetic flux density B8 to 1.92 T or higher; then setting a ratio of average magnetic domain width of treated surface after strain-introducing treatment Wa to average magnetic domain width before strain-introducing treatment W0 as Wa/W0<0.4; and setting a ratio of Wa to average magnetic domain width of untreated surface Wb as Wa/Wb>0.7; and further setting a ratio of average width of magnetic domain discontinuous portion in the untreated surface to average width of magnetic domain discontinuous portion in treated surface resulting from strain-introducing treatment Wc as Wd/Wc>0.8; and setting Wc<0.3.5 mm.

Abstract: A grain oriented electrical steel sheet is subjected to magnetic domain refining treatment by electron beam irradiation and exhibits excellent low-noise properties when assembled as an actual transformer, in which a ratio (Wa/Wb) of a film thickness (Wa) of the forsierite film on a strain-introduced side of the steel sheet to a film thickness (Wb) of the forsierite film on a non-strain-introduced side of the steel sheet is 0.5 or higher, a magnetic domain discontinuous portion in a surface of the steel sheet on the strain-introduced side has an average width of 150 to 300 ?m, and a magnetic domain discontinuous portion in a surface of the steel sheet on the non-strain-introduced side has an average width of 250 to 500 ?m.

Abstract: A grain oriented electrical steel sheet has thickness of forsterite film at bottom portions of grooves formed on a surface of the steel sheet is ?0.3 ?m, groove frequency is ?20%, abundance ratio of grooves crystal grains directly beneath themselves, each crystal grain having orientation deviating from Goss orientation by ?10° and grain size ?5 ?m, total tension exerted on the steel sheet in the rolling direction by the forsterite film and tension coating is ?10.0 MPa, total tension exerted on the steel sheet in a direction perpendicular to the rolling direction by the forsterite film and tension coating is ?5.0 MPa and total tension satisfies 1.0?A/B?5.0, where A is total tension exerted in rolling direction by forsterite film and tension coating, and B is total tension exerted in direction perpendicular to rolling direction by forsterite film and tension coating.

Abstract: A grain oriented electrical steel sheet may reduce iron loss of material with linear grooves formed thereon for magnetic domain refinement and offer excellent low iron loss properties when assembled as an actual transformer, where the steel sheet has sheet thickness of 0.30 mm or less, linear grooves are formed at intervals of 2-10 mm in the rolling direction, the depth of each of the linear grooves is 10 ?m or more, the thickness of the forsterite film at bottom portions of the linear grooves is 0.3 ?m or more, total tension applied to the steel sheet by the forsterite film and tension coating is 10.0 MPa or higher in rolling direction, and the proportion of eddy current loss in iron loss W17/50 of the steel sheet is 65% or less when alternating magnetic field of 1.7 T and 50 Hz is applied to the steel sheet in the rolling direction.

Abstract: A grain oriented electrical steel sheet is subjected to magnetic domain refinement by laser irradiation and has magnetic flux density B8 of at least 1.91 T, wherein the nitrogen content in the forsterite coating is 3.0 mass % or less. The grain oriented electrical steel sheet satisfies recent demand for iron loss reduction.

Abstract: A grain oriented electrical steel sheet is subjected to magnetic domain refinement by laser irradiation or electron irradiation and exhibits excellent low noise properties and low iron-loss properties when assembled into a real transformer device, by setting: the total tension (A) in rolling direction imparted to the steel sheet by the forsterite coating and the tension coating to be equal to or higher than 10.0 MPa; setting the total tension (B) in a direction orthogonal to the rolling direction imparted to the steel sheet by the forsterite coating and the tension coating to be equal to or higher than 5.0 MPa; and setting the total tension (A) and the total tension (B) to satisfy a formula shown below. 1.0?A/B?5.

Abstract: A grain oriented electrical steel sheet (1) suppresses the content of Cr in the grain oriented electrical steel sheet to 0.1 mass % or less; (2) sets the coating weight of a forsterite coating, in terms of basis weight of oxygen therein, to at least 3.0 g/m2 and thickness of an anchor portion as a lower portion of forsterite coating to 1.5 ?m or less; and (3) controls setting the magnitude of deflection of a test specimen having length: 280 mm to at least 10 mm when the forsterite coating is provided on only one surface thereof and at least 20 mm when forsterite coating and the tension coating are provided on the surface.

Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.

Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.

Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, the electrode pad includes aluminum (Al) of between 50% wt. and 99.9% wt. and further includes copper (Cu), a coupling ball that primarily includes Cu, the coupling ball being coupled to the electrode pad so that a CuAl2 layer, a CuAl layer, a layer including one of Cu9Al4 and Cu3Al2, and the coupling ball are vertically stacked in this order on the electrode pad, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and a junction between the electrode pad and the coupling ball.

Abstract: A semiconductor device includes an electrode pad provided on a semiconductor chip, in which the electrode pad includes aluminum (Al) as a major constituent and further including copper (Cu), a coupling ball primarily including Cu, the coupling ball is coupled to the electrode pad such that a plurality of layers of Cu and Al alloys are formed at a junction between the electrode pad and the coupling ball, and an encapsulating resin including a halogen of less than or equal to 1000 ppm, the encapsulating resin covering at least the electrode pad and the junction between the electrode pad and the coupling ball. A dimensional area of the plurality of layers of Cu and Al alloys is equal to or larger than 50% of a dimensional area of the junction between the electrode pad and the coupling ball. The plurality of layers of Cu and Al alloys includes a CuAl2 layer, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.

Abstract: A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers of Cu and Al alloys formed between the electrode pad and the coupling member, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, in which the encapsulating resin encapsulates the semiconductor chip, the electrode pad, and the coupling member. The plurality of layers of Cu and Al alloys includes a CuAl2 layer formed on the electrode pad, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.

Abstract: A semiconductor device includes a semiconductor chip, an electrode pad provided in the semiconductor chip, in which the electrode pad includes Al as a major constituent and further includes Cu, a coupling member coupled to the electrode pad, in which the coupling member primarily includes Cu, a plurality of layers of Cu and Al alloys formed between the electrode pad and the coupling member, and an encapsulating resin that includes a halogen of less than or equal to 1000 ppm, in which the encapsulating resin encapsulates the semiconductor chip, the electrode pad, and the coupling member. The plurality of layers of Cu and Al alloys includes a CuAl2 layer formed on the electrode pad, a CuAl layer formed on the CuAl2 layer, and a layer including one of Cu9Al4 and Cu3Al2 formed on the CuAl layer.