Abstract: To provide a novel heterocyclic compound having a bipolar property. To improve element characteristics of a light-emitting element by application of the novel heterocyclic compound to the light-emitting element. A heterocyclic compound represented by a general formula (G1) and a light-emitting element formed using the heterocyclic compound represented by the general formula (G1) are provided. When the heterocyclic compound represented by the general formula (G1) is used for the light-emitting element, the characteristics of the light-emitting element can be improved.

Abstract: A light emitting device that achieves long life, and which is capable of performing high duty ‘drive,’ by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.

Abstract: At least part of a semiconductor layer or a semiconductor substrate includes a semiconductor region having a large energy gap. The semiconductor region having a large energy gap is preferably formed from silicon carbide and is provided in a position at least overlapping with a gate electrode provided with an insulating layer between the semiconductor region and the gate electrode. By making a structure in which the semiconductor region is included in a channel formation region, a dielectric breakdown voltage is improved.

Abstract: When a light-emitting element having an intermediate conductive layer between a plurality of light-emitting layers is formed, the intermediate conductive layer can have transparency; and thus, materials are largely limited and the manufacturing process of an element becomes complicated by a conventional method. A light-emitting element according to the present invention is formed by sequentially stacking a pixel electrode, a first light-emitting layer, an intermediate conductive layer (including an electron injecting layer and a hole-injecting layer, one of which is island-like), a second light-emitting layer and an opposite electrode.

Abstract: Provided is a light-emitting device having a light-emitting portion having a light-emitting element in a space surrounded by a support substrate, a metal substrate, and a sealing material, in which the sealing material is provided to surround the periphery of the light-emitting portion, the light-emitting element has a first electrode, a layer having a light-emitting organic compound, and a second electrode, the support substrate and the first electrode are each capable of transmitting light emitted from the light-emitting organic compound, and the space contains gas inert to the light-emitting element or is in a vacuum. The light-emitting device has, over the second electrode, a first high-emissivity layer that has higher emissivity than the second electrode and is thermally connected to the second electrode, and a low-reflectivity layer with which a metal substrate surface facing the support substrate is provided and which has lower reflectivity than the metal substrate.

Abstract: To provide a photoelectric conversion device which has little light loss caused by light absorption in a window layer and has favorable electric characteristics. The photoelectric conversion device includes, between a pair of electrodes, a light-transmitting semiconductor layer which has one conductivity type and serves as a window layer, and a silicon semiconductor substrate having a conductivity type for forming a p-n junction or a silicon semiconductor layer having a conductivity type for forming a p-i-n junction. The light-transmitting semiconductor layer can be formed using an inorganic compound containing, as its main component, an oxide of a metal belonging to any of Groups 4 to 8 of the periodic table. The band gap of the metal oxide is greater than or equal to 2 eV.

Abstract: An inexpensive display device, as well as an electrical apparatus employing the same, can be provided. In the display device in which a pixel section and a driver circuit are included on one and the same insulating surface, the driver circuit includes a decoder 100 and a buffer section 101. The decoder 100 includes a plurality of NAND circuits each including p-channel TFTs 104 to 106 connected to each other in parallel and other p-channel TFTs 107 to 109 connected to each other in series. The buffer section 101 includes a plurality of buffers each including three p-channel TFTs 114 to 116.

Abstract: An object of the present invention is to provide a light emitting element having slight increase in driving voltage with accumulation of light emitting time. Another object of the invention is to provide a light emitting element having slight increase in resistance value with increase in film thickness. A light emitting element of the invention includes a first layer for generating holes, a second layer for generating electrons and a third layer comprising a light emitting substance between first and second electrodes. The first and third layers are in contact with the first and second electrodes, respectively. The second and third layers are connected to each other so as to inject electrons generated in the second layer into the third layer when applying the voltage to the light emitting element such that a potential of the second electrode is higher than that of the first electrode.

Abstract: The present invention provides a light-emitting element, a light-emitting device and an electronic device in which an optical path length through which generated light goes can be changed easily. The present invention provides a light-emitting element including a light-emitting layer between a first electrode and a second electrode, and a mixed layer in contact with the first electrode; in which the light-emitting layer includes a light-emitting substance; the mixed layer includes a hole transporting substance and a metal oxide showing an electron accepting property to the hole transporting substance, and has a thickness of 120 to 180 nm, and when a voltage is applied between the first electrode and the second electrode such that a potential of the first electrode is higher than that of the second electrode, the light-emitting substance emits light.

Abstract: A novel power receiving device and a novel power transmission device are provided. Power feeding and communication are performed using a magnetic resonance method. Specifically, in one embodiment of the present invention, power feeding is performed by generating a second high-frequency voltage based on a first high-frequency voltage induced in a resonant coil and communication is performed by modulating amplitude of the first high-frequency voltage induced in the resonant coil. Thus, it is possible to perform communication and power feeding based on data obtained by the communication in pseudo-parallel.

Abstract: An object of the present invention is to provide a driver circuit including a normally-on thin film transistor, which driver circuit ensures a small malfunction and highly reliable operation. The driver circuit includes a static shift register including an inverter circuit having a first transistor and a second transistor, and a switch including a third transistor. The first to third transistors each include a semiconductor layer of an oxide semiconductor and are depletion-mode transistors. An amplitude voltage of clock signals for driving the third transistor is higher than a power supply voltage for driving the inverter circuit.

Abstract: An object is to obtain a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range, using a thin film transistor in which an oxide semiconductor layer is used. An analog circuit is formed with the use of a thin film transistor including an oxide semiconductor which has a function as a channel formation layer, has a hydrogen concentration of 5×1019 atoms/cm3 or lower, and substantially functions as an insulator in the state where no electric field is generated. Thus, a semiconductor device having a high sensitivity in detecting signals and a wide dynamic range can be obtained.

Abstract: A FET is formed on a semiconductor substrate, a curved surface having a radius of curvature is formed on an upper end of an insulation, a portion of a first electrode is exposed corresponding to the curved surface to form an inclined surface, and a region defining a luminescent region is subjected to etching to expose the first electrode. Luminescence emitted from an organic chemical compound layer is reflected by the inclined surface of the first electrode to increase a total quantity of luminescence taken out in a certain direction.

Abstract: The display device includes a gate electrode, a gate insulating film provided over the gate electrode, a semiconductor film provided over the gate insulating film to overlap with the gate electrode, an island-shaped first insulating film provided over the semiconductor film to overlap with the gate electrode, a first conductive film provided over the semiconductor film, a pair of second conductive films which is provided over the semiconductor film and between which the first insulating film is sandwiched, and a second insulating film provided over the first insulating film, the first conductive film, and the pair of second conductive films. In the second insulating film and the semiconductor film, an opening portion which is positioned between the first conductive film and the one or the other of the pair of second conductive films is provided.

Abstract: It is an object to provide a highly reliable semiconductor device including a thin film transistor whose electric characteristics are stable. In addition, it is another object to manufacture a highly reliable semiconductor device at low cost with high productivity. In a semiconductor device including a thin film transistor, a semiconductor layer of the thin film transistor is formed with an oxide semiconductor layer to which a metal element is added. As the metal element, at least one of metal elements of iron, nickel, cobalt, copper, gold, manganese, molybdenum, tungsten, niobium, and tantalum is used. In addition, the oxide semiconductor layer contains indium, gallium, and zinc.

Abstract: In a thin film transistor, an increase in off current or negative shift of the threshold voltage is prevented. In the thin film transistor, a buffer layer is provided between an oxide semiconductor layer and each of a source electrode layer and a drain electrode layer. The buffer layer includes a metal oxide layer which is an insulator or a semiconductor over a middle portion of the oxide semiconductor layer. The metal oxide layer functions as a protective layer for suppressing incorporation of impurities into the oxide semiconductor layer. Therefore, in the thin film transistor, an increase in off current or negative shift of the threshold voltage can be prevented.

Abstract: Provided is a miniaturized transistor having high electrical characteristics. The transistor includes a source electrode layer in contact with one side surface of the oxide semiconductor layer in the channel-length direction and a drain electrode layer in contact with the other side surface thereof. The transistor further includes a gate electrode layer in a region overlapping with a channel formation region with a gate insulating layer provided therebetween and a conductive layer having a function as part of the gate electrode layer in a region overlapping with the source electrode layer or the drain electrode layer with the gate insulating layer provided therebetween and in contact with a side surface of the gate electrode layer. With such a structure, an Lov region is formed with a scaled-down channel length maintained.

Abstract: An object of the present invention is to provide a composite material formed of an organic compound and an inorganic compound, and has an excellent carrier transporting property, an excellent carrier injecting property to the organic compound, as well as excellent transparency. A composite material of the present invention for achieving the above object is a composite material of an organic compound represented in the general formula below, and an inorganic compound. For the inorganic compound, an oxide of a transition metal, preferably an oxide of a metal belonging to groups 4 to 8 of the periodic table, in particular vanadium oxide, tantalum oxide, molybdenum oxide, tungsten oxide, rhenium oxide, and ruthenium oxide, can be used.

Abstract: By reducing the contact resistance between an oxide semiconductor film and a metal film, a transistor that uses an oxide semiconductor film and has excellent on-state characteristics is provided. A semiconductor device includes a pair of electrodes over an insulating surface; an oxide semiconductor film in contact with the pair of electrodes; a gate insulating film over the oxide semiconductor film; and a gate electrode overlapping with the oxide semiconductor film with the gate insulating film interposed therebetween. In the semiconductor device, the pair of electrodes contains a halogen element in a region in contact with the oxide semiconductor film. Further, plasma treatment in an atmosphere containing fluorine can be performed so that the pair of electrodes contains the halogen element in a region in contact with the oxide semiconductor film.

Abstract: To provide a semiconductor device in which wireless communication is performed between devices formed over different substrates and connection defects of wirings are reduced. A first device having a first antenna is provided over a first substrate, a second device having a second antenna which can communicate with the first antenna is provided over a second substrate, and the first substrate and the second substrate are bonded to each other to manufacture a semiconductor device. The first substrate and the second substrate are bonded to each other by bonding with a bonding layer interposed therebetween, anodic bonding, or surface activated bonding.