Abstract: An object is to provide a semiconductor device having a structure in which parasitic capacitance between wirings can be efficiently reduced. In a bottom gate thin film transistor using an oxide semiconductor layer, an oxide insulating layer used as a channel protection layer is formed above and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer, and at the same time an oxide insulating layer covering a peripheral portion (including a side surface) of the stacked oxide semiconductor layer is formed. Further, a source electrode layer and a drain electrode layer are formed in a manner such that they do not overlap with the channel protection layer. Thus, a structure in which an insulating layer over the source electrode layer and the drain electrode layer is in contact with the oxide semiconductor layer is provided.

Abstract: A novel display device with higher reliability having a structure of blocking moisture and oxygen, which deteriorate the characteristics of the display device, from penetrating through a sealing region and a method of manufacturing thereof is provided.

Abstract: A full-color light-emitting device is achieved with plural kinds of light-emitting elements in each of which a stacked layer of a first material layer formed selectively with a droplet discharge apparatus and a second material layer formed by vapor-deposition method using the conductive-surface plate on which a layer containing an organic compound is formed is provided between a pair of electrodes. The first material layer is a layer in which an organic compound and a metal oxide which is an inorganic compound are mixed. By adjusting the thickness of the first material layer of each light-emitting element, which is different depending on an emission color, a blue light emission component, a green light emission component, or a red light emission component among a plurality of components for white light emission can be selectively emphasized and taken out by light interference phenomenon.

Abstract: A semiconductor device including a first gate electrode and a second gate electrode formed apart from each other over an insulating surface, an oxide semiconductor film including a region overlapping with the first gate electrode with a gate insulating film interposed therebetween, a region overlapping with the second gate electrode with the gate insulating film interposed therebetween, and a region overlapping with neither the first gate electrode nor the second gate electrode, and an insulating film covering the gate insulating film, the first gate electrode, the second gate electrode, and the oxide semiconductor film, and being in direct contact with the oxide semiconductor film is provided.

Abstract: An electroluminescent element which can easily control the balance of color in white emission (white balance) is provided according to the present invention. The electroluminescent element comprises a first light-emitting layer containing one kind or two or more kinds of light-emitting materials, and a second light-emitting layer containing two kinds of light-emitting materials (a host material and a phosphorescent material) in which the phosphorescent material is doped at a concentration of from 10 to 40 wt %, preferably, from 12.5 to 20 wt %. Consequently, blue emission can be obtained from the first light-emitting layer and green and red (or orange) emission can be obtained from the second light-emitting layer. An electroluminescent element having such device configuration can easily control white balance since emission peak intensity changes at the same rate in case of increasing a current density.

Abstract: A bottom-gate transistor with a short channel length and a method for manufacturing the transistor are provided. A bottom-gate transistor with a short channel length in which portions of a source electrode and a drain electrode which are proximate to a channel formation region are thinner than other portions thereof was devised. In addition, the portions of the source electrode and the drain electrode which are proximate to the channel formation region are formed in a later step than the other portions thereof, whereby a bottom-gate transistor with a short channel length can be manufactured.

Abstract: The number of manufacturing steps is reduced to provide a semiconductor device with high productivity and low cost. A semiconductor device with low power consumption and high reliability is provided. A photolithography process for forming an island-shaped semiconductor layer is omitted, and a semiconductor device is manufactured through at least four photolithography processes: a step for forming a gate electrode (including a wiring or the like formed from the same layer), a step for forming a source electrode and a drain electrode (including a wiring or the like formed from the same layer), a step for forming a contact hole, and a step for forming a pixel electrode. In the step for forming the contact hole, a groove portion is formed, whereby formation of a parasitic transistor is prevented. The groove portion overlaps with the wiring with an insulating layer provided therebetween.

Abstract: Provided is a method for driving a semiconductor device, which allows a reduction in scale of a circuit, reduce the power consumption, and increase the speed of reading data. An H level (data “1”) potential or an L level (data “0”) potential is written to a node of a memory cell. Potentials of a source line and a bit line are set to the same potential at an M level (L level<M level<H level) so that the potential of the node is held. When the potential of the bit line is maintained at the M level, data “1” is read and when the potential of the bit line is reduced to an L level, data “0” is read.

Abstract: A film formation apparatus with which a deposited film to cover a deposition object having a three-dimensional curved surface can be formed and a method of forming a deposited film to cover a three-dimensional curved surface. The film formation apparatus includes a deposition source having deposition directivity, a deposition-source-moving mechanism which moves the deposition source, a deposition-object-holding mechanism which holds a deposition object having a three-dimensional curved surface, a deposition-direction-changing mechanism which changes the deposition direction, and a control portion which controls the deposition-source-moving mechanism and the deposition-direction-changing mechanism.

Abstract: As a novel substance having a novel skeleton, an organometallic complex with high emission efficiency which achieves improved color purity by a reduction of half width of an emission spectrum is provided. One embodiment of the present invention is an organometallic complex in which a ?-diketone and a six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom are ligands. In General Formula (G1), X represents a substituted or unsubstituted six-membered heteroaromatic ring including two or more nitrogen atoms inclusive of a nitrogen atom that is a coordinating atom. Further, R1 to R4 each represent a substituted or unsubstituted alkyl group having 1 to 6 carbon atoms.

Abstract: A highly reliable semiconductor device which includes a transistor including an oxide semiconductor is provided. In a semiconductor device including a bottom-gate transistor including an oxide semiconductor layer, a stacked layer of an insulating layer and a metal film is provided in contact with the oxide semiconductor layer. Oxygen doping treatment is performed in a manner such that oxygen is introduced into the insulating layer and the metal film from a position above the metal film. Thus, a region containing oxygen in excess of the stoichiometric composition is formed in the insulating layer, and the metal film is oxidized to form a metal oxide film. Further, resistivity of the metal oxide film is greater than or equal to 1×1010 ?m and less than or equal to 1×1019 ?m.

Abstract: A non-aqueous secondary battery which has high charge-discharge capacity, can be charged and discharged at high speed, and has little deterioration in battery characteristics due to charge and discharge is provided. A negative electrode includes a current collector and an active material layer. The current collector includes a plurality of protrusion portions extending in a substantially perpendicular direction and a base portion connected to the plurality of protrusion portions. The protrusion portions and the base portion are formed using the same material containing titanium. Top surfaces and side surfaces of the protrusion portions and a top surface of the base portion are covered with the active material layer. The active material layer includes a plurality of whiskers. The active material layer may be covered with graphene.

Abstract: It is an object of the present invention to provide a light-emitting element with high light emission efficiency. It is another object of the present invention to provide a light-emitting element with a long lifetime. A light-emitting device is provided, which includes a light-emitting layer, a first layer, and a second layer between first electrode and a second electrode, wherein the first layer is provided between the light-emitting layer and the first electrode, the second layer is provided between the light-emitting layer and the second electrode, the first layer is a layer for controlling the hole transport, the second layer is a layer for controlling the electron transport, and a light emission from the light-emitting layer is obtained when voltage is applied to the first electrode and the second electrode so that potential of the first electrode is higher than potential of the second electrode.

Abstract: To suppress an adverse effect of change in held data in a sample-and-hold circuit as a result of increase in operation speed on a generated parallel data signal. A signal converter circuit includes a first sample-and-hold circuit and a second sample-and-hold circuit each of which has a function of extracting and holding part of a serial data signal as a data in accordance with a sampling control signal and has a function of generating a data signal which is one of data signals of a parallel data signal by using the held data and outputting the data signal. The second sample-and-hold circuit includes a switch which has a function of selecting whether the potential of the data of the second sample-and-hold circuit is set to a reference potential or not in accordance with the sampling control signal of the first sample-and-hold circuit.

Abstract: A structure including an oxide semiconductor layer which is provided over an insulating surface and includes a channel formation region and a pair of low-resistance regions between which the channel formation region is positioned, a gate insulating film covering a top surface and a side surface of the oxide semiconductor layer, a gate electrode covering a top surface and a side surface of the channel formation region with the gate insulating film positioned therebetween, and electrodes electrically connected to the low-resistance regions is employed. The electrodes are electrically connected to at least side surfaces of the low-resistance regions, so that contact resistance with the source electrode and the drain electrode is reduced.

Abstract: Oxygen vacancies in an oxide semiconductor film and the vicinity of the oxide semiconductor film are reduced and electric characteristics of a transistor including the oxide semiconductor film are improved. Further, a highly reliable semiconductor device including the transistor including the oxide semiconductor film is provided. In the transistor including the oxide semiconductor film, at least one insulating film in contact with the oxide semiconductor film contains excess oxygen. By the excess oxygen included in the insulating film in contact with the oxide semiconductor film, oxygen vacancies in the oxide semiconductor film and the vicinity of the oxide semiconductor film can be reduced. Note that the insulating film including the excess oxygen has a profile of the excess oxygen concentration having two or more local maximum values in the depth direction.

Abstract: A tris-type iridium complex in which a ligand having a distinctive nitrogen-containing five-membered heterocyclic skeleton is coordinated is provided. The ligand has a nitrogen-containing five-membered heterocyclic skeleton composed of 2 to 4 nitrogen atoms and one or more carbon atoms. In the skeleton, an aryl group is bonded to a carbon atom on both sides of which nitrogen atoms are positioned, and a tricycloalkyl group having a bridge structure and having 9 or 10 carbon atoms is bonded to one of the two nitrogen atoms positioned on both the sides of the carbon atom. The tricycloalkyl group having a bridge structure and having 9 or 10 carbon atoms may be an adamantyl group or a noradamantyl group.

Abstract: Disclosed is a power storage device including a negative electrode and a positive electrode. The negative electrode includes a negative electrode current collector including a common portion and a plurality of protrusions protruding from the common portion, and a negative electrode active material layer which covers a side surface of the protrusion. The positive electrode faces the negative electrode with an electrolyte provided therebetween. In the plurality of protrusions, a distance between adjacent protrusions is a distance with which adjacent negative electrode active material layers are in contact with each other before the capacity of the negative electrode active material layer reaches the theoretical capacity of the negative electrode active material layer by insertion of carrier ions from the positive electrode.

Abstract: The positive electrode active material layer includes a plurality of particles of a positive electrode active material and a reaction mixture where reduced graphene oxide is bonded to a polymer having a functional group as a side chain. The reduced graphene oxide has a sheet-like shape and high conductivity and thus functions as a conductive additive by being in contact with the plurality of particles of the positive electrode active material. The reaction mixture serves as an excellent binder since the reduced graphene oxide is bonded to the polymer. Therefore, even a small amount of the reaction mixture where the reduced graphene oxide is covalently bonded to the polymer excellently serves as a conductive additive and a binder.

Abstract: A highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics is manufactured. In the semiconductor device which includes an inverted-staggered transistor having a bottom-gate structure and being provided over a substrate having an insulating surface, at least a first gate insulating film and a second gate insulating film are provided between a gate electrode layer and an oxide semiconductor film, and heat treatment is performed at a temperature of 450° C. or higher, preferably 650° C. or higher, and then the oxide semiconductor film is formed. By the heat treatment at a temperature of 450° C. or higher before the formation of the oxide semiconductor film, diffusion of hydrogen elements into the oxide semiconductor film, which causes degradation or variations in electric characteristics of the transistor, can be reduced, so that the transistor can have stable electric characteristics.