Patents by Inventor Sen Huang

Sen Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Passivation of group III-nitride heterojunction devices
    Patent number: 9337028
    Abstract: Passivation of group III-nitride hetero junction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface.
    Type: Grant
    Filed: December 30, 2014
    Date of Patent: May 10, 2016
    Assignee: THE HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Jing Chen, Sen Huang, Qimeng Jiang, Zhikai Tang
  • SLIM WATER BOTTLE
    Publication number: 20160122064
    Abstract: A water bottle includes a body having an open top, and two first snapping members are connected to two outsides of the body. A top part is mounted to the open top of the body with a first seal ring located between the top part and the open top. An outlet is defined in the top of the top part and communicates with the interior of the body. Two second snapping members extend from two outsides of the top part so as to be snapped with the first snapping members to securely connect the top part to the body. A cap is pivotably connected to the top part and covers the outlet. A second seal ring is located between the outlet and the cap. The interior of the body is easily cleaned when removing the top part from the body.
    Type: Application
    Filed: March 30, 2015
    Publication date: May 5, 2016
    Inventor: Po-Sen Huang
  • Vacuum sealing machine
    Patent number: 9327854
    Abstract: A vacuum sealing machine contains a sealing unit including a first connecting rod, two first electromagnets, and a first press member, the first connecting rod having two fixing pieces and two first apertures, and the first press member having a first adhering face; a pressing unit including a second connecting rod, two second electromagnets, a second press member, and two connection mounts, the second connecting rod having two pull bars, a plurality of second apertures, and two support tabs to support the first connecting rod, and the second press member having a second adhering face; an air exhausting unit including a transmission device and a drawing device; the body having a holder in which a receiving room is formed so as to receive the sealing unit, the pressing unit, and the air exhausting unit; the receiving room having a seat, the seat having the barrier strip and a heating strip.
    Type: Grant
    Filed: October 17, 2012
    Date of Patent: May 3, 2016
    Inventor: Mao-Sen Huang
  • Manufacturing method for forming semiconductor structure
    Patent number: 9331171
    Abstract: The present invention provides a manufacturing method of a semiconductor structure, comprising the following steps. First, a substrate is provided, a first dielectric layer is formed on the substrate, a metal gate is disposed in the first dielectric layer and at least one source/drain region (S/D region) is disposed on two sides of the metal gate, a second dielectric layer is then formed on the first dielectric layer, a first etching process is then performed to form a plurality of first trenches in the first dielectric layer and the second dielectric layer, wherein the first trenches expose each S/D region. Afterwards, a salicide process is performed to form a salicide layer in each first trench, a second etching process is then performed to form a plurality of second trenches in the first dielectric layer and the second dielectric layer, and the second trenches expose the metal gate.
    Type: Grant
    Filed: August 21, 2015
    Date of Patent: May 3, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Chih-Sen Huang
  • Method for fabricating semiconductor device
    Patent number: 9324610
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least one metal gate thereon, a source/drain region adjacent to two sides of the at least one metal gate, and an interlayer dielectric (ILD) layer around the at least one metal gate; forming a plurality of contact holes in the ILD layer to expose the source/drain region; forming a first metal layer in the contact holes; performing a first thermal treatment process; and performing a second thermal treatment process.
    Type: Grant
    Filed: August 10, 2014
    Date of Patent: April 26, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Wen Hung, Jia-Rong Wu, Tsung-Hung Chang, Ching-Ling Lin, Yi-Hui Lee, Chih-Sen Huang, Yi-Wei Chen, Chun-Hsien Lin
  • EARPHONE ASSEMBLY AND HEAD STRAP THEREOF
    Publication number: 20160112788
    Abstract: A head strap includes a head band and a pair of holders. The pair of holders are connected to two ends of the head band. Each of the pair of holders includes a receiving portion. The receiving portion defines a receiving cavity with a cutout. The disclosure also provides an earphone assembly.
    Type: Application
    Filed: December 31, 2014
    Publication date: April 21, 2016
    Inventor: PO-SEN HUANG
  • Device and method for determining gesture and operation method of gesture determining device
    Patent number: 9317744
    Abstract: A device for determining a gesture includes a light emitting unit, an image sensing device and a processing circuit. The light emitting unit emits a light beam. The image sensing device captures an image of a hand reflecting the light beam. The processing circuit obtains the image and determines a gesture of the hand by performing an operation on the image; wherein the operation includes: selecting pixels in the image having a brightness greater than or equal to a brightness threshold; dividing the selected pixels; and determining the gesture of the hand according to a number of group of divided pixels. A method for determining a gesture and an operation method of the aforementioned device are also provided.
    Type: Grant
    Filed: July 2, 2015
    Date of Patent: April 19, 2016
    Assignee: Pixart Imaging Inc.
    Inventors: Yu-Hao Huang, Ming-Tsan Kao, Sen-Huang Huang, Nien-Tse Chen, En-Feng Hsu, Yi-Yuan Chen
  • Remote controller and display system
    Patent number: 9314173
    Abstract: There is provided a remote controller including a plurality of press buttons, an optical finger mouse and a transmission interface. The press buttons are configured to trigger a control signal. The optical finger mouse is configured to detect a physiological characteristic and a displacement. The transmission interface is configured to output the control signal, the physiological characteristic and the displacement to a display device. There is further provided a display system.
    Type: Grant
    Filed: September 14, 2012
    Date of Patent: April 19, 2016
    Assignee: PIXART IMAGING INC.
    Inventors: Ren-Hau Gu, Ming-Tsan Kao, Sen-Huang Huang
  • MANUFACTURING METHOD OF A SEMICONDUCTOR STRUCTURE
    Publication number: 20160104647
    Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method includes the following steps. A substrate is provided. A fin structure and an inter-layer dielectric layer are formed on the substrate. A plurality of gate structures is formed on the substrate. A cap layer is formed on the gate structures. A hard mask is formed on the cap layer. A first patterned photoresist layer covering the gate structures is formed on the hard mask. The hard mask is etched and patterned to form a patterned hard mask, such that the patterned hard mask covers the gate structures. A second patterned photoresist layer including a plurality of openings corresponding to the fin structure is formed on the patterned hard mask. The cap layer and the inter-layer dielectric layer are etched to form a plurality of first trenches exposing part of the fin structure.
    Type: Application
    Filed: November 12, 2014
    Publication date: April 14, 2016
    Inventors: Chao-Hung Lin, Shih-Hung Tsai, Ssu-I Fu, Chih-Sen Huang, Li-Wei Feng, Jyh-Shyang Jenq
  • METHOD FOR MANUFACTURING A CONTACT STRUCTURE USED TO ELECTRICALLY CONNECT A SEMICONDUCTOR DEVICE
    Publication number: 20160104637
    Abstract: A method for manufacturing contact structure includes the steps of: providing a substrate having the semiconductor device and an interlayer dielectric thereon, wherein the semiconductor device includes a gate structure and a source/drain region; forming a patterned mask layer with a stripe hole on the substrate, and concurrently forming a stripe-shaped mask layer on the substrate; forming a patterned photoresist layer with a plurality of slot holes on the substrate, wherein at least one of the slot holes is disposed right above the source/drain region; and forming a contact hole in the interlayer dielectric by using the patterned mask layer, the stripe-shaped mask layer and the patterned photoresist layer as an etch mask, and the source/drain region is exposed from the bottom of the contact hole when the step of forming the contact hole is completed.
    Type: Application
    Filed: October 8, 2014
    Publication date: April 14, 2016
    Inventors: Ching-Wen Hung, Chih-Sen Huang
  • SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME
    Publication number: 20160104645
    Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a plurality of gate structures on the substrate; forming a first stop layer on the gate structures; forming a second stop layer on the first stop layer; forming a first dielectric layer on the second stop layer; forming a plurality of first openings in the first dielectric layer to expose the second stop layer; forming a plurality of second openings in the first dielectric layer and the second stop layer to expose the first stop layer; and removing part of the second stop layer and part of the first stop layer to expose the gate structures.
    Type: Application
    Filed: November 10, 2014
    Publication date: April 14, 2016
    Inventors: Ching-Wen Hung, Chih-Sen Huang, Yi-Wei Chen, Chien-Ting Lin, Shih-Fang Tzou, Chia-Lin Lu, Chun-Lung Chen, Kun-Yuan Liao, Feng-Yi Chang, Chieh-Te Chen
  • METHOD FOR CLEANING CONTACT HOLE AND FORMING CONTACT PLUG THEREIN
    Publication number: 20160104612
    Abstract: The method for cleaning a contact hole and forming a contact plug therein is provided. The method includes steps of: providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole; and forming a contact plug in the contact hole. The pre-cleaning process includes steps of: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process with a temperature which is equal to or greater than 300° C.; and performing an Ar-plasma etching process.
    Type: Application
    Filed: October 9, 2014
    Publication date: April 14, 2016
    Applicant: UNITED MICROELECTRONICS CORPORATION
    Inventors: YI-HUI LEE, TSUNG-HUNG CHANG, CHING-WEN HUNG, JIA-RONG WU, CHING-LING LIN, CHIH-SEN HUANG, YI-WEI CHEN, CHIA-CHANG HSU, SHU-MIN HUANG, HSIN-FU HUANG
  • METHOD FOR FORMING SEMICONDUCTOR DEVICE
    Publication number: 20160104646
    Abstract: A manufacturing method for forming a semiconductor device includes: first, a substrate is provided, a fin structure is formed on the substrate, and a plurality of gate structures are formed on the fin structure, next, a hard mask layer and a first photoresist layer are formed on the fin structure, an first etching process is then performed on the first photoresist layer, afterwards, a plurality of patterned photoresist layers are formed on the remaining first photoresist layer and the remaining hard mask layer, where each patterned photoresist layer is disposed right above each gate structure, and the width of each patterned photoresist is larger than the width of each gate structure, and the patterned photoresist layer is used as a hard mask to perform an second etching process to form a plurality of second trenches.
    Type: Application
    Filed: October 14, 2014
    Publication date: April 14, 2016
    Inventors: Ching-Wen Hung, Tsung-Hung Chang, Jia-Rong Wu, Ching-Ling Lin, Yi-Hui Lee, Chih-Sen Huang, Yi-Wei Chen
  • Semiconductor device and manufacturing method thereof
    Patent number: 9312356
    Abstract: The semiconductor device includes a gate electrode, a first interlayer dielectric, a first mask layer, a second mask layer and a second interlayer dielectric. The first interlayer dielectric surrounds the periphery of the gate electrode, and the first mask layer is disposed on the gate electrode. The first mask layer and the gate electrode have at least one same metal component. The second mask layer is disposed on the sidewalls of the first mask layer, and the second interlayer dielectric is disposed on the second mask layer and in direct contact with the first interlayer dielectric.
    Type: Grant
    Filed: February 4, 2015
    Date of Patent: April 12, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Ling Lin, Chih-Sen Huang, Yi-Wen Chen
  • Method for cleaning contact hole and forming contact plug therein
    Patent number: 9312121
    Abstract: The method for cleaning a contact hole and forming a contact plug therein is provided. The method includes steps of: providing a silicon substrate; forming a contact hole in the silicon substrate; performing a pre-cleaning process to clean the contact hole; and forming a contact plug in the contact hole. The pre-cleaning process includes steps of: performing an oxide dry etching process; performing a first thermal annealing process with a temperature which is equal to or greater than 300° C.; performing a degassing process with a temperature which is equal to or greater than 300° C.; and performing an Ar-plasma etching process.
    Type: Grant
    Filed: October 9, 2014
    Date of Patent: April 12, 2016
    Assignee: UNITED MICROELECTRONICS CORPORATION
    Inventors: Yi-Hui Lee, Tsung-Hung Chang, Ching-Wen Hung, Jia-Rong Wu, Ching-Ling Lin, Chih-Sen Huang, Yi-Wei Chen, Chia-Chang Hsu, Shu-Min Huang, Hsin-Fu Huang
  • Optical finger mouse, electronic device and physiological characteristics detection device
    Patent number: 9301694
    Abstract: There is provided an optical finger mouse including two light sources, an image sensor and a processing unit. The two light sources emit light of different wavelengths to illuminate a finger surface. The image sensor receives reflected light from the finger surface to generate a plurality of image frames. The processing unit detects a displacement and a contact status of the finger surface and a physiological characteristic of a user according to the plurality of image frames. There is further provided an electronic device and a physiological characteristic detection device.
    Type: Grant
    Filed: September 13, 2012
    Date of Patent: April 5, 2016
    Assignee: PIXART IMAGING INC.
    Inventors: Ren Hau Gu, Ming Tsan Kao, Sen Huang Huang
  • Method of forming self-aligned metal gate structure in a replacement gate process using tapered interlayer dielectric
    Patent number: 9306032
    Abstract: A method for manufacturing a semiconductor device includes following steps. A substrate having at least a transistor embedded in an insulating material formed thereon is provided. The transistor includes a metal gate. Next, an etching process is performed to remove a portion of the metal gate to form a recess and to remove a portion of the insulating material to form a tapered part. After forming the recess and the tapered part of the insulating material, a hard mask layer is formed on the substrate to fill up the recess. Subsequently, the hard mask layer is planarized.
    Type: Grant
    Filed: October 25, 2013
    Date of Patent: April 5, 2016
    Assignee: UNITED MICROELECTRONICS CORP.
    Inventors: Ching-Ling Lin, Chih-Sen Huang, Po-Chao Tsao, Ching-Wen Hung, Jia-Rong Wu, Chien-Ting Lin
  • User Identification method, physiological detection device and physiological detection method
    Patent number: 9289159
    Abstract: There is provided a physiological detection device including a finger detection unit, a storage unit and a processing unit. The finger detection unit is configured to detect a current track drawn by a current user and current physiological information of the current user. The storage unit is configured to previously store track features of predetermined tracks drawn, for a predetermined time interval or a predetermined times on the finger detection unit, by a plurality of users and each of the track features is associated with one of the users. The processing unit is configured to analyze the current track and identify the current user according to the track features in the storage unit. There is further provided a physiological detection method and a user identification method.
    Type: Grant
    Filed: April 24, 2013
    Date of Patent: March 22, 2016
    Assignee: PIXART IMAGING INC.
    Inventors: Ming-Tsan Kao, Sen-Huang Huang, Ren-Hau Gu, Chung-Yuo Wu
  • Displacement estimation method and displacement estimation device using the same
    Patent number: 9288369
    Abstract: The present invention provides a displacement estimation method including the steps of: acquiring an image frame and determining a quality threshold according to a sampling parameter; calculating a quality parameter of the image frame; and comparing the quality parameter and the quality threshold to determine whether to post-process the image frame. In the displacement estimation method of the present invention, the quality threshold can be adjusted dynamically so as to reduce the possibility of outputting error displacement. The present invention further provides a displacement estimation device.
    Type: Grant
    Filed: July 14, 2011
    Date of Patent: March 15, 2016
    Assignee: PIXART IMAGING INC.
    Inventors: Hsin Chia Chen, Tzung Min Su, Sen Huang Huang
  • SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF
    Publication number: 20160071800
    Abstract: A semiconductor structure including a dielectric layer, a titanium layer, a titanium nitride layer and a metal is provided. The dielectric layer is disposed on a substrate, wherein the dielectric layer has a via. The titanium layer covers the via, wherein the titanium layer has tensile stress lower than 1500 Mpa. The titanium nitride layer conformally covers the titanium layer. The metal fills the via. The present invention also provides a semiconductor process for forming said semiconductor structure. The semiconductor process includes the following steps. A dielectric layer is formed on a substrate, wherein the dielectric has a via. A titanium layer conformally covers the via, wherein the titanium layer has compressive stress lower than 500 Mpa. A titanium nitride layer is formed to conformally cover the titanium layer. A metal fills the via.
    Type: Application
    Filed: October 14, 2014
    Publication date: March 10, 2016
    Inventors: Ching-Wen Hung, Tsung-Hung Chang, Yi-Hui Lee, Chih-Sen Huang, Yi-Wei Chen, Chia Chang Hsu, Hsin-Fu Huang, Chun-Yuan Wu, Shih-Fang Tzou