Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first gate structure on the substrate; forming a first contact plug adjacent to the first gate structure; and performing a replacement metal gate (RMG) process to transform the first gate structure into metal gate.

Abstract: There is provided a keyboard module including a plurality of keyboard keys, an optical finger mouse and a transmission interface. The keyboard keys are configured to trigger a digital signal. The optical finger mouse is configured to detect a physiological characteristic and a displacement. The transmission interface is configured to send the digital signal, the physiological characteristic and the displacement to a display device. There is further provided a display system.

Abstract: A semiconductor structure includes a metal gate, a second dielectric layer and a contact plug. The metal gate is located on a substrate and in a first dielectric layer, wherein the metal gate includes a work function metal layer having a U-shaped cross-sectional profile and a low resistivity material located on the work function metal layer. The second dielectric layer is located on the metal gate and the first dielectric layer. The contact plug is located on the second dielectric layer and in a third dielectric layer, thereby a capacitor is formed. Moreover, the present invention also provides a semiconductor process forming said semiconductor structure.

Abstract: A method for manufacturing a low interface state device includes performing a remote plasma surface process on a III-Nitride layer on a substrate; transferring the processed substrate to a deposition cavity via an oxygen-free transferring system; and depositing on the processed substrate in the deposition cavity. The deposition may be low pressure chemical vapor deposition (LPCVD). The interface state between a surface dielectric and III-Nitride material may be significantly decreased by integrating a low impairment remote plasma surface process and LPCVD.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having at least a gate structure thereon and an interlayer dielectric (ILD) layer surrounding the gate structure, wherein the gate structure comprises a hard mask thereon; forming a dielectric layer on the gate structure and the ILD layer; removing part of the dielectric layer to expose the hard mask and the ILD layer; and performing a surface treatment to form a doped region in the hard mask and the ILD layer.

Abstract: There is provided a user interface system including a slave device and a master device. The slave device provides light of two different wavelengths to illuminate a finger surface, receives reflected light from the finger surface to generate a plurality of image frames, calculates and outputs an image data associated with a predetermined number of the image frames. The master device calculates a contact status and a displacement of the finger surface and a physiological characteristic of a user according to the image data.

Abstract: There is provided a displacement detection device including an image sensor, a light source, a light control unit and a processing unit. The image sensor captures image frames at a sampling frequency. The light source provides, in a speed mode, light for the image sensor in capturing the image frames. The light control unit controls the light source with the speed mode to turn on at a lighting frequency or to turn off serially. The processing unit calculates a displacement according to the image frames captured when the light source turns on to be served as an estimated displacement for an interval during which the light source turns off. There is further provided an operating method of a displacement detection device.

Abstract: A distance measuring system includes a light source module, an image capturing device and a processing module. The light source module transmits a light beam having a speckle pattern to a first flat surface and a second flat surface, and an object. The image capturing device captures the image of the speckle pattern shown on the first and second flat surfaces, and captures the image of the speckle pattern shown on a surface of the object to produce first reference image information, second reference image information, and object image information. The processing module calculates a displacement vector of the speckle pattern according to the first and second reference image information. The processing module calculates the relative distance between the object and the first flat surface or the second flat surface according to the position of the speckle pattern on the object image information and the displacement vector.

Abstract: A semiconductor structure is provided, including a substrate, a plurality of first semiconductor devices, a plurality of second semiconductor devices, and a plurality of dummy slot contacts. The substrate has a device region, wherein the device region includes a first functional region and a second functional region, and a dummy region is disposed therebetween. The first semiconductor devices and a plurality of first slot contacts are disposed in the first functional region. The second semiconductor devices and a plurality of second slot contacts are disposed in the second functional region. The dummy slot contacts are disposed in the dummy region.

Abstract: An image-capturing device configured for an optical pointing apparatus includes a plurality of image-sensing units arranged adjacently. The plurality of image-sensing units are configured to sense images of a surface and generate sensing signals that are used for evaluating the velocity of the optical pointing apparatus. The image-capturing device is configured to use different image-sensing units arranged differently to sense the surface according to the velocity of the optical pointing apparatus. When the optical pointing apparatus moves at a first velocity, the image-capturing device uses the image-sensing units configured to occupy a smaller area to sense the surface. When the optical pointing apparatus moves at a second velocity, the image-capturing device uses the image-sensing units configured to occupy a larger area to sense the surface. The first velocity is lower than the second velocity.

Abstract: A semiconductor structure is provided, including a substrate, a plurality of first semiconductor devices, a plurality of second semiconductor devices, and a plurality of dummy slot contacts. The substrate has a device region, wherein the device region includes a first functional region and a second functional region, and a dummy region is disposed therebetween. The first semiconductor devices and a plurality of first slot contacts are disposed in the first functional region. The second semiconductor devices and a plurality of second slot contacts are disposed in the second functional region. The dummy slot contacts are disposed in the dummy region.

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a gate structure thereon and an interlayer dielectric (ILD) layer around the gate structure; forming a dielectric layer on the ILD layer and the gate structure; forming an opening in the dielectric layer and the ILD layer; forming an organic dielectric layer (ODL) on the dielectric layer and in the opening; removing part of the ODL; removing part of the dielectric layer for extending the opening; removing the remaining ODL; and forming a contact plug in the opening.

Abstract: A semiconductor device structure having at least one thin-film resistor structure is provided. Through the metal plug(s) or metal wirings located on different layers, a plurality of stripe segments of the thin-film resistor structure is electrically connected to ensure the thin-film resistor structure with the predetermined resistance and less averting areas in the layout design.

Abstract: A semiconductor device structure having at least one thin-film resistor structure is provided. Through the metal plug(s) or metal wirings located on different layers, a plurality of stripe segments of the thin-film resistor structure is electrically connected to ensure the thin-film resistor structure with the predetermined resistance and less averting areas in the layout design.

Abstract: A protection member for a transmission cable includes a resilient coat and a fixing member. The resilient coat includes two resilient members connected to each other so as to receive the flexible wire of the transmission cable. A first connection portion is formed on the facing side of each of the resilient members. The two resilient members are connected to each other by the two respective first connection portions. The fixing member includes two hard members connected to each other so as to receive the resilient coat therein. A second connection portion is formed on the facing side of each of the hard members. The two hard members are connected to each other by the two respective second connection portions. The fixing member protects the flexible wire to be overly bent.

Abstract: A physiological detection system including an image sensor, a converting unit, a retrieving unit and a processing unit is provided. The image sensor includes a plurality of pixels respectively configured to output a PPG signal. The converting unit is configured to convert a plurality of PPG signals of a plurality of pixels regions to a plurality of frequency domain signals. The retrieving unit is configured to respectively retrieve a spectral energy of the frequency domain signals corresponding to each of the pixel regions. The processing unit is configured to construct a 3D energy distribution according to the spectral energies.

Abstract: A method for manufacturing contact structure includes the steps of: providing a substrate having the semiconductor device and an interlayer dielectric thereon, wherein the semiconductor device includes a gate structure and a source/drain region; forming a patterned mask layer with a stripe hole on the substrate, and concurrently forming a stripe-shaped mask layer on the substrate; forming a patterned photoresist layer with a plurality of slot holes on the substrate, wherein at least one of the slot holes is disposed right above the source/drain region; and forming a contact hole in the interlayer dielectric by using the patterned mask layer, the stripe-shaped mask layer and the patterned photoresist layer as an etch mask, and the source/drain region is exposed from the bottom of the contact hole when the step of forming the contact hole is completed.

Abstract: A manufacturing method of a semiconductor structure is provided. The manufacturing method includes the following steps. A substrate is provided. A fin structure and an inter-layer dielectric layer are formed on the substrate. A plurality of gate structures is formed on the substrate. A cap layer is formed on the gate structures. A hard mask is formed on the cap layer. A first patterned photoresist layer covering the gate structures is formed on the hard mask. The hard mask is etched and patterned to form a patterned hard mask, such that the patterned hard mask covers the gate structures. A second patterned photoresist layer including a plurality of openings corresponding to the fin structure is formed on the patterned hard mask. The cap layer and the inter-layer dielectric layer are etched to form a plurality of first trenches exposing part of the fin structure.

Abstract: The present invention provides a method of forming a semiconductor structure including a substrate, a transistor, a first ILD layer, a second ILD layer, a first contact plug, second contact plug and a third contact plug. The transistor is disposed on the substrate and includes a gate and a source/drain region. The first ILD layer is disposed on the transistor. The first contact plug is disposed in the first ILD layer and a top surface of the first contact plug is higher than a top surface of the gate. The second ILD layer is disposed on the first ILD layer. The second contact plug is disposed in the second ILD layer and electrically connected to the first contact plug. The third contact plug is disposed in the first ILD layer and the second ILD layer and electrically connected to the gate.

Abstract: An earphone device includes a housing, a speaker diaphragm, and a sealing cup. The housing includes a cavity and a plurality of vent holes acoustically coupled to the cavity. The speaker diaphragm is received in the cavity and configured to produce sound. The sealing cup is hermetically closed with the housing, and has at least one opening defined therethrough. The sealing cup and the housing cooperate to define an air chamber acoustically coupled to both the vent holes and the opening. The vent holes are configured to transfer the sound produced by the speaker diaphragm into the air chamber. The air chamber serves as an acoustic resonator to resonate the sound. The opening is configured to allow the sound transfer from the air chamber to outside of the air chamber.