Abstract: A paper warping detection device includes an input tray, a processor, a first emitting element, a first receiving element and a first analog-to-digital converter. A first critical value is stored in the processor. The first emitting element is electrically connected with the processor. The first receiving element is disposed to the other side of the input tray. The first receiving element and the first emitting element face each other. When the first emitting element is switched on, the first emitting element emits first ultrasonic wave signals towards the first receiving element. The first analog-to-digital converter is electrically connected with the first receiving element and the processor for converting the first ultrasonic wave signals into first digital signals and outputting the first digital signals to the processor. The processor reads the first digital signals and compares the first digital signals with the first critical value.

Abstract: A computing device includes a rail mount chassis and a processor. The rail mount chassis includes a pressure sensor. The processor monitors the pressure sensor to obtain pressure sensor data; estimates a load exerted on a rail of the rail mount chassis using the obtained pressure sensor data; makes a determination that the load exerted on the rail exceeds a load rating of the rail; and in response to the determination, notifies a user that the rail may be damaged.

Abstract: A braking system with function of anti-somersault, comprising: a hydraulic unit, a piston, a drive unit, a suspension travel sensor, and an ECU. During braking, according to a suspension travel signal generated by the suspension travel sensor, the ECU is able to determine whether a vehicle with short wheel base and high centre of gravity tends to be subject to forward somersault or not. Once confirmed, the ECU immediately sends a control signal to the drive unit, so as to drive the piston move towards a pressure releasing direction, such that fluid pressure on the downstream side of the hydraulic unit is blocked from changing. Moreover, further increase of the piston's displacement increases fluid volume in an oil chamber of the hydraulic unit so as to largely reduce the downstream fluid pressure. Consequently, braking force applied to the vehicle by the braking caliper decreases, and the forward somersault is prevented.

Abstract: A control method of a recoverable file protection device and a protection method of a recoverable file are provided. After a file owner sets a secured content in an unprotected data, a secured content protection mode is selected. In accordance with the secured protection mode, the recoverable file protection device can move the secured content and the marked content can replace the secured content. An authentication key is inputted to encrypt the secured content. If a user would like to open the file, the user is requested to verify an identification data. If the identification data complies with the authentication key, the recoverable file protection device moves the secured content to recover the original content. If the identification data doesn't comply with the authentication key, the file content without the secured content is opened. Therefore, a security of an e-file can be achieved.

Abstract: A method for fabricating semiconductor device is disclosed. A substrate having a first transistor on a first region, a second transistor on a second region, a trench isolation region, a resistor-forming region is provided. A first ILD layer covers the first region, the second region, and the resistor-forming region. A resistor material layer and a capping layer are formed over the first region, the second region, and the resistor-forming region. The capping layer and the resistor material layer are patterned to form a first hard mask pattern above the first and second regions and a second hard mask pattern above the resistor-forming region. The resistor material layer is isotropically etched. A second ILD layer is formed over the substrate. The second ILD layer and the first ILD layer are patterned with a mask and the first hard mask pattern to form a contact opening.

Abstract: An intercom system for emergency rescue has a user extension, an administration server and a management device. The user extension has a serial number and is capable of generating an alarm signal by operation. The administration server connects to the user extension and the management device to receive the alarm signal. A plot plan recording a location of the user extension is stored in the administration server. The administration server transmits the plot plan with the location of the user extension that outputs the alarm signal to the management device to display. Therefore, an administrator equipped with the management device communicates with the user extension via a video connection established by the administration server. With the help of the plot plan and the video connection, the administrator provides timely assistance to reduce casualties.

Abstract: An optical flow sensing method includes: using an image sensor to capture images; using a directional-invariant filter device upon at least one first block of the first image to process values of pixels of the at least one first block of the first image, to generate a first filtered block image; using the first directional-invariant filter device upon at least one first block of the second image to process values of pixels of the at least one first block of the second image, to generate a second filtered block image; comparing the filtered block images to calculate a correlation result; and estimating a motion vector according to a plurality of correlation results.

Abstract: A waterborne coating consists in an ink-absorbing spheres emulsion containing acrylate micro-sphere formed with a hollow chamber, an inorganic ink-absorbing material worked with the ink-absorbing spheres emulsion together for use in absorbing ink, a waterborne acrylate emulsion containing a low-Tg acrylate monomer liquid to fix the inorganic ink-absorbing material, and a waterborne crosslinker having two or more reactive functional groups to bridge with carboxyl monomers; and particularly the waterborne coating is coated onto synthetic paper as a surface coating to endow the synthetic paper with good printability, coating adhesion, water resistance, scrape resistance and solvent resistance.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a first gate structure on the substrate, a first spacer around the first gate structure, and an interlayer dielectric (ILD) layer around the first spacer; performing a first etching process to remove part of the ILD layer for forming a recess; performing a second etching process to remove part of the first spacer for expanding the recess; and forming a contact plug in the recess.

Abstract: There is provided an optical navigation device including an image sensor, a processing unit, a storage unit and an output unit. The image sensor is configured to successively capture images. The processing unit is configured to calculate a current displacement according to the images and to compare the current displacement or an accumulated displacement with a threshold so as to determine an outputted displacement. The storage unit is configured to save the accumulated displacement. The output unit is configured to output the outputted displacement with a report rate.

Abstract: There is provided a remote control system including a controlled device and a remote device. The controlled device has a light source and moves according to a control signal from the remote device. The remote device is adapted to be operated by a user and includes an image sensor. The remote device determines a moving direction of the controlled device according to an imaging position of the light source in the image captured by the image sensor and a pointing position of the user, and outputs the control signal.

Abstract: There is provided an optical navigation device including an image sensor, a processing unit, a storage unit and an output unit. The image sensor is configured to successively capture images. The processing unit is configured to calculate a current displacement according to the images and to compare the current displacement or an accumulated displacement with a threshold so as to determine an outputted displacement. The storage unit is configured to save the accumulated displacement. The output unit is configured to output the outputted displacement with a report rate.

Abstract: A GaN-based power electronic device and a method for manufacturing the same is provided. The GaN-based power electronic device comprising a substrate and an epitaxial layer over the substrate. The epitaxial layer comprises a GaN-based heterostructure layer, a superlattice structure layer and a P-type cap layer. The superlattice structure layer is provided over the heterostructure layer, and the P-type cap layer is provided over the superlattice structure layer. By using this electronic device, gate voltage swing and safe gate voltage range of the GaN-based power electronic device manufactured on the basis of the P-type cap layer technique may be further extended, and dynamic characteristics of the device may be improved. Therefore, application process for the GaN-based power electronic device that is based on the P-type cap layer technique will be promoted.

Abstract: A deep structured semantic module (DSSM) is described herein which uses a model that is discriminatively trained based on click-through data, e.g., such that a conditional likelihood of clicked documents, given respective queries, is maximized, and a condition likelihood of non-clicked documents, given the queries, is reduced. In operation, after training is complete, the DSSM maps an input item into an output item expressed in a semantic space, using the trained model. To facilitate training and runtime operation, a dimensionality-reduction module (DRM) can reduce the dimensionality of the input item that is fed to the DSSM. A search engine may use the above-summarized functionality to convert a query and a plurality of documents into the common semantic space, and then determine the similarity between the query and documents in the semantic space. The search engine may then rank the documents based, at least in part, on the similarity measures.

Abstract: The present invention provides a method of forming a semiconductor structure including a substrate, a transistor, a first ILD layer, a second ILD layer, a first contact plug, second contact plug and a third contact plug. The transistor is disposed on the substrate and includes a gate and a source/drain region. The first ILD layer is disposed on the transistor. The first contact plug is disposed in the first ILD layer and a top surface of the first contact plug is higher than a top surface of the gate. The second ILD layer is disposed on the first ILD layer. The second contact plug is disposed in the second ILD layer and electrically connected to the first contact plug. The third contact plug is disposed in the first ILD layer and the second ILD layer and electrically connected to the gate.

Abstract: An optoelectronic device includes: a substrate made of a first material; a region in the substrate, the region being made of a second material different from the first material; an N-well in the region made of the second material; and a photo diode formed in the region by ion implantation. The second material for example is silicon germanium (Si1-xGex) or silicon carbide (Si1-yCy), wherein 0<x, y<1.

Abstract: A lighting bulb according to embodiments of the disclosure comprises a light source assembly, a base and a transparent top cap. The light source assembly has a carrier plate, a first plurality of light-emitting units and a second plurality of light-emitting units. The carrier plate has first and second surfaces. The base is for fixing the carrier plate to have the first surface facing to a first direction and the second surface facing to a second direction opposite to the first direction. The transparent top cap has an inner surface facing to a third direction perpendicular to the first and second directions. The first and second plurality of light-emitting units are located between the transparent top cap and the base.

Abstract: Semiconductor devices and method of manufacturing such semiconductor devices are provided for improved FinFET memory cells to avoid electric short often happened between metal contacts of a bit cell, where the meal contacts are positioned next to a dummy gate of a neighboring dummy edge cell. In one embodiment, during the patterning of a gate layer on a substrate surface, an improved gate slot pattern is used to extend the lengths of one or more gate slots adjacent bit lines so as to pattern and sectionalize a dummy gate line disposed next to metal contacts of an active memory cell. In another embodiment, during the patterning of gate lines, the distances between one or more dummy gates lines disposed adjacent an active memory cell are adjusted such that their locations within dummy edge cells are shifted in position to be away from metal contacts of the active memory cell.

Abstract: An Internet Key Exchange (IKE) negotiation control method, device and system are provided. In the method, a receiving end receives an IKE negotiation message sent by an initiating end, and parses the IKE negotiation message to obtain IKE negotiation message information; in a case that a current IKE negotiation is in an aggressive mode, the receiving end acquires triple information of message and initiating end identity information according to the IKE negotiation message information, and searches for and acquires a virtual negotiation interface, matched with the initiating end, on the receiving end according to the triple information of message and the initiating end identity information. An IKE negotiation control device and system are also provided.

Abstract: A method for fabricating semiconductor device includes the steps of: providing a substrate; forming a first gate structure on the substrate, a first spacer around the first gate structure, and an interlayer dielectric (ILD) layer around the first spacer; performing a first etching process to remove part of the ILD layer for forming a recess; performing a second etching process to remove part of the first spacer for expanding the recess; and forming a contact plug in the recess.