Abstract: The present disclosure provides for hybrid catalysts, methods of converting CO2 to C2 products (e.g., ethylene), systems for converting CO2 to C2 products (e.g., ethylene), and the like. The hybrid catalyst of the present disclosure effectively uses two steps of converting CO2 to ethylene in a single hybrid catalyst.

Abstract: Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate (101) of a first conductivity type, a drift region (102) of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions (103) of the first conductivity type. The drift region is located in the substrate of the first conductivity type. The longitudinal floating field plate array includes a plurality of longitudinal floating field plate structures (104) arranged at intervals in rows and columns. Each longitudinal floating field plate structures includes a dielectric layer (1041) disposed on an inner surface of a trench and a conductive layer (1042) filling the trench. The plurality of implantation regions are located in the drift region of, each implantation region is located between two adjacent longitudinal floating field plate structures in each row.

Abstract: This application relates to the field of cloud computing, and specifically, to a method for providing an edge service for a terminal by using a resource of an edge resource cluster in a cloud computing system. The cloud computing system includes a central resource cluster and at least one edge resource cluster. The method includes: a management node deployed in the central resource cluster determines a target execution node based on an edge service application range that is specified by a tenant or that is determined by the management node based on information about a tenant; the target execution node determines, according to an edge service policy sent by the management node, a target edge node from at least one edge node deployed in the at least one edge resource cluster; and the target execution node further forwards an edge service request to the target edge node.

Abstract: A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method of manufacturing the LDMOS device are disclosed. The method includes: obtaining a substrate with a drift region formed thereon, the drift region having a first conductivity type and disposed on the substrate of a second conductivity type; etching the drift region to form therein a sinking structure, the sinking structure includes at least one of an implanting groove and an implanting hole; implanting ions of the second conductivity type at the bottom of the sinking structure; forming a buried layer of the second conductivity type by causing diffusion of the ions of the second conductivity type using a thermal treatment; and filling an electrical property modification material into the sinking structure, the electrical property modification material differs from the material of the drift region.

Abstract: The present invention discloses a solid-state LiDAR device and a scanning method based on a tunable laser array. The array sequentially emits laser beams of different wavelengths, collimated by a collimating lens, and passes through a beam splitter. The beams are then diffracted by a blazed grating and focused by the first focusing lens onto the focal plane of the transmitting lens, and then emitted through the transmitting lens as collimated beams in different directions for wide area scanning. The optical receiving path uses the reversed coaxial system, where the received light returns to the beam splitter, redirects to the second focusing lens, and is finally focused on the detector. This invention incorporates tunable laser arrays, optical systems and dispersion devices to realize a solid-state wide-area scanning LiDAR device without moving parts, offering a wide scanning range, small size and fast scanning speed.

Abstract: A semiconductor device and a manufacturing method therefor. The semiconductor device comprises: a semiconductor substrate. A first drift region is formed in the semiconductor substrate. A gate structure is formed on the semiconductor substrate A part of the gate structure covers a part of the first drift region. A first trench is formed in the first drift region, and a drain region is formed in the semiconductor substrate at the bottom of the first trench.

Abstract: A manufacturing method for a P-type laterally diffused metal oxide semiconductor device includes: forming a N-type buried layer in a substrate, forming a P-type region located on the N-type buried layer, and forming a mask layer located on the P-type region; patterning the mask layer to form at least two injection windows; performing N-type ion implantation by the at least two injection windows; forming an oxide layer; removing the mask layer; performing P-type ion implantation on the P-type region to form a P-type doped region; diffusing the P-type doped region to form a drift region and two P-type well regions, diffusing the high-voltage N-well doped region to form a high-voltage N-type well region, and diffusing the low-voltage N-well doped region to form a low-voltage N-type well region; and forming a source doped region, a drain doped region, and a gate.

Abstract: A winding single-sided region starting section of a first current collector, a surface facing the center of an electrode assembly is provided with a first protective layer and a surface facing away from the center of the electrode assembly is provided with a first active material layer; and for a winding single-sided region ending section of a second current collector, a surface facing away from the center of the electrode assembly is provided with a second protective layer, and a surface facing the center of the electrode assembly is provided with a second active material layer. A ratio of a unit area weight of the first protective layer to a unit area weight of the first active material layer is (0.03-0.75):1, and a ratio of a unit area weight of the second protective layer to a unit area weight of the second active material layer is (0.03-0.75):1.

Abstract: A strain separation method for preventing and controlling early bolting of Angelica sinensis, and preparation of a microbial agent and use thereof, the strain is obtained by separation, purification and cultivation from rhizosphere soil of Angelica sinensis, and is identified as Bacillus spp. by Microbial 16S rDNA sequencing; the strain was deposited at China Center for Type Culture Collection on Jun. 24, 2021 under CCTCC NO: M 2021767; The Bacillus velezensis XG3 strain provided by the present invention can promote the seed germination of Angelica sinensis and delay the flowering of Arabidopsis thaliana for about 2 days; according to field test verification, the microbial agent can increase the root weight, root diameter and rootlet number of Angelica sinensis, can effectively prevent and control early bolting of Angelica sinensis.

Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.

Abstract: An electrochemical device includes an electrode assembly. The electrode assembly includes a first electrode plate, a second electrode plate, and a separator. A plurality of first tabs are disposed on the first electrode plate. The separator is disposed between the first and second electrode plates. The first electrode plate, the separator, and the second electrode plate are stacked and wound. The first tabs are connected to a region of the first electrode plate other than first inner layers and first outer layers. The first inner layers include N layers along a direction from a start layer to an end layer of the first electrode plate. The first outer layers include M layers starting from the end layer of the first electrode plate along a direction from the end layer to the start layer of the first electrode plate, where M?1, and N?3.

Abstract: A metal-impregnated carbon material includes a mesoporous carbon matrix including a metal M. The metal M is bonded directly to the carbon matrix, M is bonded directly to an atom A that is bonded directly to the carbon matrix, or a combination thereof. At each occurrence, A is independently chosen from N, O, P, S, and B.

Abstract: A reverse conducting lateral insulated-gate bipolar transistor includes a drift region formed on a substrate, a gate located on the drift region, an emitter region located on the drift region and close to one side of the gate, and a collector region located on the drift region and away from one side of the gate. Two or more N-well regions arranged at intervals are provided on the side of the drift region where the collector region is located. A P-well region is provided between the two or more N-well regions arranged at intervals; a P+ contact region is provided on the N-well region; an N+ contact region is provided on the P-well region; both the P+ contact region and the N+ contact region are conductively connected to a collector lead-out end.

Abstract: A transient voltage suppression device includes: a substrate; a first conductive type well region including a first well and a second well; a second conductive type well region including a third well and a fourth well, the third well being disposed between the first well and the second well so as to isolate the first well and the second well, and the second well being disposed between the third well and the fourth well; a zener diode active region; a first doped region, provided in the first well; a second doped region, provided in the first well; a third doped region, provided in the second well; a fourth doped region, provided in the second well; a fifth doped region, provided in the zener diode active region; and a sixth doped region, provided in the zener diode active region.

Abstract: Methods, systems, and computer-readable storage media for receiving a query request including authorization data and a query, the authorization data indicating a privilege level index, determining a set of row ranges based on the privilege level index and a row range table, the set of row ranges including one or more row ranges having a privilege level associated therewith in the row range table, providing an initial results set including one or more records of a data table that are determined to be responsive, determining a final results set including at least one record of the initial results set, the at least one record being included in the final results set in response to determining that the at least one record is included in a row range of the set of row ranges, and outputting the final results set as at least a portion of a query result.

Abstract: The present application relates to a method for treating myopia with vipocetine, which can effectively prevent myopia and/or control the progression of myopia while being safe and free of obvious side effects, having good prospects for clinical application.

Abstract: A synchronous rectification control system and method for a quasi-resonant flyback converter are provided. The control system includes a switching transistor voltage sampling circuit configured to sample an output terminal voltage of the switching transistor to obtain a sampled voltage of the switching transistor; a sampling calculation module configured to obtain a dead-time based on the sampled voltage of the switching transistor and a preset relationship, the preset relationship being a correspondence between the duration of the sampled voltage of the switching transistor being below a first preset value and the dead-time during an on-time of a switching cycle of the switching transistor, the dead-time being a time from when the switching transistor is turned off to when the synchronous rectification transistor is turned on; and a control module configured to receive the dead-time and control switching of the synchronous rectification transistor based on the dead-time.

Abstract: A new variable selective etching technology for thick SOI devices. An SOI material is etched by the following steps: (1) providing an SOI wafer; (2) depositing a composite hard mask with a variable selection ratio to replace a traditional hard mask with an invariable selection ratio; (3) applying a photoresist; (4) mask making, namely defining a to-be-etched region by using a photoetching plate; (5) etching the photoresist in the defined region; (6) etching the composite hard mask; (7) removing the photoresist; (8) etching top silicon by using a second etching method at a first selection ratio; and (9) etching a buried oxide layer by using a third etching method at a second selection ratio. The new variable selective etching technology avoids the damage to a side wall of a deep trench when the buried oxide layer is etched, and does not need to use an excessive thick hard mask.

Abstract: A diode and a manufacturing method therefor, and a semiconductor device. The diode includes: a substrate; an insulating buried layer provided on the substrate; a semiconductor layer provided on the insulating buried layer; anode; and a cathode, comprising: a trench-type contact, a trench being filled with a contact material, the trench extending from a first surface of the semiconductor layer to a second surface of the semiconductor layer, the first surface being a surface distant from the insulating buried layer, and the second surface being a surface facing the insulating buried layer; a cathode doped region surrounding the trench-type contact around and at the bottom of the trench-type contact, and also disposed on the first surface around the trench-type contact; and a negative electrode located on the cathode doped region and electrically connected to the cathode doped region.