Abstract: A piston limiting structure, including: a cylinder, a piston, and a flange provided with a limiting piece, the cylinder has a piston hole perpendicular to an axial direction of the cylinder and penetrating through the cylinder, and a projection of the piston hole in a penetrating direction is circular. The piston is disposed in the piston hole in a form-fit manner and is slid in the piston hole in a reciprocating manner. A side wall of the piston is provided with a thrust groove, a bottom surface of the thrust groove forms a thrust surface on the side wall of the piston, and the thrust groove does not penetrate through two ends of the side wall of the piston along an axial length of the piston. The limiting piece abuts against the thrust surface.

Abstract: The present disclosure provides a pump body assembly, a heat exchange apparatus, a fluid machine and an operating method thereof. The pump body assembly includes a piston, a shaft, a piston sheath, and a cylinder. The shaft drives the piston to rotate and reciprocate within the piston sheath while rotating. The piston sheath is located in the cylinder, and a compression chamber is defined between an outer circumferential wall of the piston and an inner wall of the cylinder. A pressure relief recess is defined in the outer circumferential wall of the piston or the inner wall of the cylinder at a position corresponding to the compression chamber.

Abstract: The present invention relates to a compound of formula (I) capable of inhibiting plasmin activity and having blood coagulation and hemostasis activity, and a pharmaceutically acceptable salt, hydrate, isomer, prodrug and mixture thereof, wherein R1 to R3 are as defined in the description.

Abstract: A new variable selective etching technology for thick SOI devices. An SOI material is etched by the following steps: (1) providing an SOI wafer; (2) depositing a composite hard mask with a variable selection ratio to replace a traditional hard mask with an invariable selection ratio; (3) applying a photoresist; (4) mask making, namely defining a to-be-etched region by using a photoetching plate; (5) etching the photoresist in the defined region; (6) etching the composite hard mask; (7) removing the photoresist; (8) etching top silicon by using a second etching method at a first selection ratio; and (9) etching a buried oxide layer by using a third etching method at a second selection ratio. The new variable selective etching technology avoids the damage to a side wall of a deep trench when the buried oxide layer is etched, and does not need to use an excessive thick hard mask.

Abstract: Embodiments are generally directed to a system and method for adapting executable object to a processing unit. An embodiment of a method to adapt an executable object from a first processing unit to a second processing unit, comprises: adapting the executable object optimized for the first processing unit of a first architecture, to the second processing unit of a second architecture, wherein the second architecture is different from the first architecture, wherein the executable object is adapted to perform on the second processing unit based on a plurality of performance metrics collected while the executable object is performed on the first processing unit and the second processing unit.

Abstract: Aspects of the invention include systems and methods configured to prevent masquerading service attacks. A non-limiting example computer-implemented method includes sending, from a first server in a cloud environment, a communication request comprising an application programming interface (API) key and a first server identifier to an identity and access management (IAM) server of the cloud environment. The API key can be uniquely assigned by the IAM server to a first component of the first server. The first server receives a credential that includes a token for the first component and sends the credential to a second server. The second server sends the credential, a second server identifier, and an identifier for a second component of the second server to the IAM server. The second server receives an acknowledgment from the IAM server and sends the acknowledgment to the first server.

Abstract: The present invention discloses a refrigerator, including a cabinet and a door for opening or closing the cabinet, a dedicated region module being provided on an inner side of the door facing the cabinet, and the dedicated region module having a receiving space for storing articles, the refrigerator further includes a wireless charging unit, the wireless charging unit includes a receiving terminal provided on the dedicated region module and a transmitting terminal provided on the cabinet, the transmitting terminal is matched with the receiving terminal and configured to transmit generated energy, and the dedicated region module further includes an electric component electrically connected with the receiving terminal.

Abstract: Disclosed are an array substrate and a display panel, including: a base substrate; and a wiring layer, an anode layer, and a light-emitting layer which are stacked on the base substrate sequentially, wherein the wiring layer includes a signal wiring, a first wiring and a second wiring, a projection of the first wiring on the base substrate is separated from a projection of the second wiring on the base substrate, the first and second wirings are respectively disposed on two sides of the anode layer below the anode layer, the signal wiring is between the first and second wirings, the projections of the first and second wirings on the base substrate respectively overlap projections of two sides of the anode layer on the base substrate, and a length of the second wiring is less than that of the signal wiring in an extension direction of the signal wiring.

Abstract: A diode and a manufacturing method therefor, and a semiconductor device. The diode includes: a substrate; an insulating buried layer provided on the substrate; a semiconductor layer provided on the insulating buried layer; anode; and a cathode, comprising: a trench-type contact, a trench being filled with a contact material, the trench extending from a first surface of the semiconductor layer to a second surface of the semiconductor layer, the first surface being a surface distant from the insulating buried layer, and the second surface being a surface facing the insulating buried layer; a cathode doped region surrounding the trench-type contact around and at the bottom of the trench-type contact, and also disposed on the first surface around the trench-type contact; and a negative electrode located on the cathode doped region and electrically connected to the cathode doped region.

Abstract: A transient voltage suppression device and a manufacturing method therefor, the transient voltage suppression device including: a substrate, a first conductivity type well region and a second conductivity type well region disposed in the substrate. The first conductivity type well region includes a first well, a second well, and a third well. The second conductivity type well region includes a fourth well that isolates the first well from the second well, and a fifth well that isolates the second well from the third well. The device further includes a Zener diode well region provided in the first well, a first doped region provided in the Zener diode well region, a second doped region provided in the Zener diode well region, a third doped region provided in the second well, a fourth doped region provided in the third well, and a fifth doped region provided in the third well.

Abstract: Methods, systems, and computer-readable storage media for receiving a query request including authorization data and a query, the authorization data indicating a privilege level index, determining a set of row ranges based on the privilege level index and a row range table, the set of row ranges including one or more row ranges having a privilege level associated therewith in the row range table, providing an initial results set including one or more records of a data table that are determined to be responsive, determining a final results set including at least one record of the initial results set, the at least one record being included in the final results set in response to determining that the at least one record is included in a row range of the set of row ranges, and outputting the final results set as at least a portion of a query result.

Abstract: An underwater rescue device, including a cabin provided with a hatch is provided, wherein the hatch is capable to open or close the cabin to form a confined space inside the cabin; a salvage device arranged inside the cabin, comprising a rescue platform and a gripper mechanism arranged on the rescue platform, wherein the rescue platform is movable, the rescue platform is capable to rotate relative to the cabin along at least one rotational axis and is capable to lift and lower to remove the cabin, and the gripper mechanism is configured to grab a drowning person and fix the drowning person on the rescue platform; a cardiopulmonary resuscitation device arranged inside the cabin; a drainage device arranged on the cabin; and a power device arranged on an outer side of the cabin. It has a high degree of automation and can provide immediate rescue for drowning personnel.

Abstract: A laterally double-diffused metal oxide semiconductor device is provided, including: a drift region (3) having a first conductivity type; a first body region (10) disposed on the drift region (3) and having a second conductivity type, the first conductivity type and the second conductivity type being opposite conductivity types; a first conductivity type region (13) disposed in the first body region (10); a second body region (12) disposed in the first conductivity type region (13) and having the second conductivity type; a source region (11) disposed in the second body region (12) and having the first conductivity type; and a contact region (9) disposed in the first body region (10) and having the second conductivity type.

Abstract: Disclosed is a lithium battery separator including a porous PVDF-based resin coating, wherein the porous PVDF-based resin coating is located on at least one surface of a base film, and the porous PVDF-based resin coating on a single side has a thickness of 0.5-3.5 ?m, and has a ratio of a bonding strength (N/m) to coating air permeability increment (s/100 cc) of greater than or equal to 0.25, and a ratio of a bonding strength (N/m) to a surface density per unit coating (g/m2/?m) of greater than or equal to 10, resulting in a porous PVDF-based resin coating with excellent thickness, coating air permeability increment, bonding strength and thermal shrinkage; and the formed lithium battery separator is also excellent in cycling performance and heat resistance.

Abstract: A laterally diffused metal-oxide-semiconductor (LDMOS) device and a method for fabricating the LDMOS device are disclosed. The device includes: a substrate (101) having a second conductivity type; a drift region (102) that has a first conductivity type and is disposed on the substrate (101), wherein the first conductivity type is opposite to the second conductivity type; a plurality of layers of doped structures disposed in the drift region (102), each layer of the doped structure comprising at least one doped bar (105) extending in a lengthwise direction of a conductive channel; and a plurality of doped polysilicon pillars (106) disposed in the drift region (102) so as to extend downward through the doped bar (105) of at least one of the layer of doped structures, wherein ions doped in the doped polysilicon pillars (106) and ions doped in the doped bar have opposite conductivity types.

Abstract: A transient voltage suppression device includes: a substrate; a first conductive type well region including a first well and a second well; a second conductive type well region including a third well and a fourth well, the third well being disposed between the first well and the second well so as to isolate the first well and the second well, and the second well being disposed between the third well and the fourth well; a zener diode active region; a first doped region, provided in the first well; a second doped region, provided in the first well; a third doped region, provided in the second well; a fourth doped region, provided in the second well; a fifth doped region, provided in the zener diode active region; and a sixth doped region, provided in the zener diode active region.

Abstract: Disclosed are a laterally diffused metal oxide semiconductor device and a method for preparing the same. The device includes a substrate (101) of a first conductivity type, a drift region (102) of a second conductivity type, a longitudinal floating field plate array and a plurality of implantation regions (103) of the first conductivity type. The drift region is located in the substrate of the first conductivity type. The longitudinal floating field plate array includes a plurality of longitudinal floating field plate structures (104) arranged at intervals in rows and columns. Each longitudinal floating field plate structures includes a dielectric layer (1041) disposed on an inner surface of a trench and a conductive layer (1042) filling the trench. The plurality of implantation regions are located in the drift region of, each implantation region is located between two adjacent longitudinal floating field plate structures in each row.

Abstract: An insulated gate bipolar transistor, comprising an anode second conductivity-type region and an anode first conductivity-type region provided on a drift region; the anode first conductivity-type region comprises a first region and a second region, and the anode second conductivity-type region comprises a third region and a fourth region, the dopant concentration of the first region being less than that of the second region, the dopant concentration of the third region being less than that of the fourth region, the third region being provided between the fourth region and a body region, the first region being provided below the fourth region, and the second region being provided below the third region and located between the first region and the body region.