Patents by Inventor Seok-Hwan Oh
Seok-Hwan Oh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8125617Abstract: An apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the apparatus may be provided. The manufacturing apparatus may include a liquid supplying portion for forming a liquid film, and a gas supplying unit that may rotate to discharge gas at a wide range of angles. The manufacturing method may include forming a shape and size of a liquid film common to the shape and size of an exposure region through adjusting the direction and pressure in which gas may be discharged to the substrate. Thus, the speed at which a substrate may be moved may be increased, and morphology differences of a substrate may be reduced.Type: GrantFiled: November 25, 2008Date of Patent: February 28, 2012Assignee: Samsung Electronics Co., Ltd.Inventors: Sang-Yoon Woo, Yong-Jin Cho, Seok-Hwan Oh
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Publication number: 20110320025Abstract: A method of measuring an overlay of an object is provided. In the method, first information of a first structure may be obtained. A preliminary structure may be formed on the first structure. Second information of the preliminary structure may be obtained. The first information and the second information may be processed to obtain virtual information of a second structure that would be formed on the first structure if a process is performed on the preliminary structure. A virtual overlay between the first structure and the second structure may be measured using the virtual information.Type: ApplicationFiled: May 13, 2011Publication date: December 29, 2011Inventors: Jin-Seok Heo, Seok-Hwan Oh, Jeong-Ho Yeo
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Publication number: 20110275020Abstract: Methods of forming photoresist patterns may include forming a photoresist layer on a substrate, exposing the photoresist layer using an exposure mask, forming a preliminary pattern by developing the exposed photoresist layer and treating a surface of the preliminary pattern using a treatment agent that includes a coating polymer.Type: ApplicationFiled: May 3, 2011Publication date: November 10, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Subramanya Mayya, Takahiro Yasue, Seok-hwan Oh, Yool Kang
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Publication number: 20110244689Abstract: A method of manufacturing a semiconductor device includes forming a first mask pattern on a substrate by using a material including a polymer having a protection group de-protectable by an acid, the first mask pattern having a plurality of holes; forming a capping layer on an exposed surface of the first mask pattern, the capping layer including an acid source; diffusing the acid source into the first mask pattern so that the protection group becomes de-protectable from the polymer in the first mask pattern; forming a second mask layer on the capping layer, the second mask layer separate from the first mask pattern and filling the plurality of holes in the first mask pattern; and forming a plurality of second mask patterns in the plurality of holes by removing the capping layer and the first mask pattern.Type: ApplicationFiled: March 31, 2011Publication date: October 6, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: So-ra Han, Yool Kang, Seong-ho Moon, Kyung-hwan Yoon, Hyoung-hee Kim, Seong-woon Choi, Seok-hwan Oh
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Patent number: 7944519Abstract: A liquid crystal display (LCD) module includes a bottom case; a reflector on the bottom case; a plurality of lamps on the reflector; a driving voltage supply portion supplying driving voltages to the lamps and coupled with the bottom case using a screw; a side supporter crossing and covering one end portions of the lamps and including a protrusion facing a head of the screw, wherein a distance between the protrusion and the screw is less than a height of the screw; a plurality of optical sheets on the side supporter; a liquid crystal panel on the optical sheets; a main supporter surrounding the optical sheets and the liquid crystal panel; and a top case covering a peripheral region of the liquid crystal panel.Type: GrantFiled: December 15, 2008Date of Patent: May 17, 2011Assignee: LG Display Co., Ltd.Inventors: Jae-Ho Lee, Seok-Hwan Oh
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Publication number: 20110053362Abstract: A method of forming a mask pattern, a method of forming a minute pattern, and a method of manufacturing a semiconductor device using the same, the method of forming the mask pattern including forming first mask patterns on a substrate; forming first preliminary capping layers on the first mask patterns; irradiating energy to the first preliminary capping patterns to form second preliminary capping layers ionically bonded with the first mask patterns; applying an acid to the second preliminary capping layers to form capping layers; forming a second mask layer between the capping layers, the second mask layer having a solubility lower than that of the capping layers; and removing the capping layers to form second mask patterns.Type: ApplicationFiled: September 1, 2010Publication date: March 3, 2011Inventors: Hyoung-Hee KIM, Yool Kang, Seong-Ho Moon, Seok-Hwan Oh, So-Ra Han, Seong-Woon Choi
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Patent number: 7862988Abstract: Provided is a method for forming patterns of a semiconductor device. According to the method, first mask patterns may be formed on a substrate, and second mask patterns may be formed on sidewalls of each first mask pattern. Third mask patterns may fill spaces formed between adjacent second mask patterns, and the second mask patterns may be removed. A portion of the substrate may then be removed using the first and third mask patterns as etch masks.Type: GrantFiled: September 29, 2006Date of Patent: January 4, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Cha-Won Koh, Yool Kang, Sang-Gyun Woo, Seok-Hwan Oh, Gi-Sung Yeo, Ji-Young Lee
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Patent number: 7825041Abstract: A method of reworking a semiconductor substrate and a method of forming a pattern of semiconductor device using the same without damage to an organic anti-reflective coating (ARC) is provided. The method of reworking a semiconductor substrate includes forming a photoresist pattern on a substrate having the organic ARC formed thereon. An entire surface of the substrate having the photoresist pattern formed thereon may be exposed when a defect is present in the photoresist pattern. The entire-surface-exposed photoresist pattern may be removed by performing a developing process without damage to the organic ARC.Type: GrantFiled: February 6, 2008Date of Patent: November 2, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Eun-Sung Kim, Tae-Kyu Kim, Seok-Hwan Oh
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Publication number: 20100248492Abstract: A method of forming fine patterns of a semiconductor device by using carbon (C)-containing films includes forming an etching target film on a substrate including first and second regions; forming a plurality of first C-containing film patterns on the etching target film in the first region; forming a buffer layer which covers top and side surfaces of the plurality of first C-containing film patterns; forming a second C-containing film; removing the second C-containing film in the second region; exposing the plurality of first C-containing film patterns by removing a portion of the buffer layer in the first and second regions; and etching the etching target film by using the plurality of first C-containing film patterns, and portions of the second C-containing film which remain in the first region, as an etching mask.Type: ApplicationFiled: December 29, 2009Publication date: September 30, 2010Applicant: Samsung Electronics Co., Ltd.Inventors: Dong-ki Yoon, Shi-yong Yi, Seong-woon Choi, Seok-hwan Oh, Kwang-sub Yoon, Myeong-cheol Kim, Young-ju Park
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Publication number: 20100167214Abstract: A method of forming a fine pattern includes forming an organic guide layer on a substrate, forming a photoresist pattern on the organic guide layer, the photoresist pattern including a plurality of openings exposing portions of the organic guide layer, forming a material layer on the exposed portions of the organic guide layer and on the photoresist pattern, the material layer including block copolymers, and rearranging the material layer through phase separation of the block copolymers into a fine pattern layer, such that the fine pattern layer includes a plurality of first blocks and a plurality of second blocks arranged in an alternating pattern, the plurality of first blocks and the plurality of the second blocks having different repeating units of the block copolymers.Type: ApplicationFiled: November 19, 2009Publication date: July 1, 2010Inventors: Dong Ki Yoon, Shi-yong Yi, Seok-hwan Oh, Kyoung-seon Kim, Sang Ouk Kim, Seung-hak Park
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Publication number: 20100157196Abstract: A backlight unit capable of preventing an initial driving malfunction is disclosed. The backlight unit includes a bottom cover opened upwardly, a reflective sheet disposed in the inner surface of the bottom cover; a plurality of lamps arranged at a fixed interval on the reflective sheet; an auxiliary light source disposed at the outer side surface of the bottom cover; and a light guide member, opposite to the emitting surface of the auxiliary light source, configured to guide light emitted from the auxiliary light source to the lamps through first and second penetration holes formed on one of the side walls of the bottom cover and the reflective sheet.Type: ApplicationFiled: December 2, 2009Publication date: June 24, 2010Inventors: Joo Hong Lee, Hong Sung Song, Seok Hwan Oh, Woong Ki Min, Ji Woon Min
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Patent number: 7678650Abstract: Example embodiments provide a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.Type: GrantFiled: May 20, 2009Date of Patent: March 16, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Cha-Won Koh, Byung-Hong Chung, Sang-Gyun Woo, Jeong-Lim Nam, Seok-Hwan Oh, Jai-Hyuk Song, Hyun Park, Yool Kang
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Publication number: 20100007813Abstract: A liquid crystal display (LCD) module includes a bottom case; a reflector on the bottom case; a plurality of lamps on the reflector; a driving voltage supply portion supplying driving voltages to the lamps and coupled with the bottom case using a screw; a side supporter crossing and covering one end portions of the lamps and including a protrusion facing a head of the screw, wherein a distance between the protrusion and the screw is less than a height of the screw; a plurality of optical sheets on the side supporter; a liquid crystal panel on the optical sheets; a main supporter surrounding the optical sheets and the liquid crystal panel; and a top case covering a peripheral region of the liquid crystal panel.Type: ApplicationFiled: December 15, 2008Publication date: January 14, 2010Inventors: Jae-Flo Lee, Seok-Hwan Oh
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Patent number: 7611368Abstract: A backlight assembly includes: lamps; lamp holders each holding at least one of opposite ends of a corresponding one of the lamps, the lamp holders being electrically connected with external electrodes of the lamps; and a lower frame formed to partially cover the lamp holders such that the lower frame is formed in one unified body with the lamp holders.Type: GrantFiled: May 9, 2008Date of Patent: November 3, 2009Assignee: LG Display Co., Ltd.Inventors: Seok Hwan Oh, Sang Mook Lee
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Patent number: 7604907Abstract: Mask sets are provided which may be used to define a first pattern region that has a first pitch pattern and a second pattern region that has a second pitch pattern during the fabrication of a semiconductor device. These mask sets may include a first mask that has a first exposure region in which a first halftone pattern defines the first pattern region and a first screen region in which a first shield layer covers the second pattern region. These mask sets may further include a second mask that has a second exposure region in which a second halftone pattern defines the second pattern region and a second screen region in which a second shield layer covers the first pattern region. The second shield layer also extends from the second screen region to cover a portion of the second halftone pattern.Type: GrantFiled: October 4, 2005Date of Patent: October 20, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Doo-Youl Lee, Seok-Hwan Oh, Gi-Sung Yeo, Sang-Gyun Woo, Sook Lee, Joo-On Park, Sung-Gon Jung
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Publication number: 20090258473Abstract: Example embodiments provide a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.Type: ApplicationFiled: May 20, 2009Publication date: October 15, 2009Inventors: Cha-Won Koh, Byung-Hong Chung, Sang-Gyun Woo, Jeong-Lim Nam, Seok-Hwan Oh, Jai-Hyuk Song, Hyun Park, Yool Kang
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Patent number: 7582899Abstract: There are provided a semiconductor device having an overlay measurement mark, and a method of fabricating the same. The semiconductor device includes a scribe line region disposed on a semiconductor substrate. A first main scale layer having a first group of line and space patterns and a second group of line and space patterns is disposed on the scribe line region. Line-shaped second main scale patterns are disposed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are disposed on space regions of the second group of the line and space patterns. In the method, a first main scale layer having a first group of line and space patterns and a second group of line and space patterns is formed on a semiconductor substrate. Line-shaped second main scale patterns are formed on space regions of the first group of the line and space patterns. Line-shaped vernier scale patterns are formed on space regions of the second group of the line and space patterns.Type: GrantFiled: December 8, 2005Date of Patent: September 1, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Cha-Won Koh, Sang-Gyun Woo, Seok-Hwan Oh, Gi-Sung Yeo, Hyun-Jae Kang, Jang-Ho Shin
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Patent number: 7560768Abstract: Provided are a nonvolatile memory device and a method of manufacturing the same. A floating gate electrode of the nonvolatile memory device may have a cross-shaped section as taken along a direction extending along a control gate electrode. The floating gate electrode may have an inverse T-shaped section as taken along a direction extending along an active region perpendicular to the control gate electrode. The floating gate electrode may include a lower gate pattern, a middle gate pattern and an upper gate pattern sequentially disposed on a gate insulation layer, in which the middle gate pattern is larger in width than the lower gate pattern and the upper gate pattern. A boundary between the middle gate pattern and the upper gate pattern may have a rounded corner.Type: GrantFiled: November 9, 2006Date of Patent: July 14, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Cha-Won Koh, Byung-Hong Chung, Sang-Gyun Woo, Jeong-Lim Nam, Seok-Hwan Oh, Jai-Hyuk Song, Hyun Park, Yool Kang
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Publication number: 20090147225Abstract: An apparatus for manufacturing a semiconductor device and a method for manufacturing a semiconductor device using the apparatus may be provided. The manufacturing apparatus may include a liquid supplying portion for forming a liquid film, and a gas supplying unit that may rotate to discharge gas at a wide range of angles. The manufacturing method may include forming a shape and size of a liquid film common to the shape and size of an exposure region through adjusting the direction and pressure in which gas may be discharged to the substrate. Thus, the speed at which a substrate may be moved may be increased, and morphology differences of a substrate may be reduced.Type: ApplicationFiled: November 25, 2008Publication date: June 11, 2009Inventors: Sang-Yoon Woo, Yong-Jin Cho, Seok-Hwan Oh
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Patent number: 7540970Abstract: Methods of fabricating a semiconductor device are provided. Methods of forming a finer pattern of a semiconductor device using a buffer layer for retarding, or preventing, bridge formation between patterns in the formation of a finer pattern below resolution limits of a photolithography process by double patterning are also provided. A first hard mask layer and/or a second hard mask layer may be formed on a layer of a substrate to be etched. A first etch mask pattern of a first pitch may be formed on the second hard mask layer. After a buffer layer is formed on the overall surface of the substrate, a second etch mask pattern of a second pitch may be formed thereon in a region between the first etch mask pattern. The buffer layer may be anisotropically etched using the second etch mask pattern as an etch mask, forming a buffer layer pattern.Type: GrantFiled: May 8, 2006Date of Patent: June 2, 2009Assignee: Samsung Electronics Co., Ltd.Inventors: Cha-Won Koh, Sang-Gyun Woo, Jeong-Lim Nam, Kyeong-Koo Chi, Seok-Hwan Oh, Gi-Sung Yeo, Seung-Pil Chung, Heung-Sik Park