Abstract: Provided is an apparatus for conveying a carrier and a system for controlling a carrier having the same, which couples a hoist and a hand using a non-contact damping structure using an eddy current. The apparatus for conveying the carrier conveys a carrier containing a wafer, and includes: a gripper for gripping the carrier; and a lifter for raising and lowering the gripper, in which the gripper and the lifter are connected in a non-contact damping structure, and a relative motion thereof is suppressed.

Abstract: This technology provides an electronic device and a method for fabricating the same. An electronic device in accordance with an implementation of this document may include a substrate including a first portion in a first region and a second portion in a second region; a plurality of memory cells disposed over the first portion of the substrate; a first insulating layer extending over the second portion of the substrate and at least partially filling a space between adjacent ones of the plurality of memory cells; and a second insulating layer disposed over the first insulating layer. The first insulating layer has a dielectric constant smaller than that of the second insulating layer, a thermal conductivity smaller than that of the second insulating layer, or both.

Abstract: Disclosed are uses of ginseng saponin, which contains at least 90% of a compound K, Rd, F2, and Rg3 as a main ingredient and has effects in extending the lifespan of the cell, promoting the cell differentiation, increasing the number of red blood cells, and reducing the triglycerides by extracting, heat-treating, and enzyme-converting the ginseng saponin to prepare active saponins Rd, F2, and Rg3 including a compound K.

Abstract: Disclosed are uses of ginseng saponin, which contains at least 90% of a compound K, Rd, F2, and Rg3 as a main ingredient and has effects in extending the lifespan of the cell, promoting the cell differentiation, increasing the number of red blood cells, and reducing the triglycerides by extracting, heat-treating, and enzyme-converting the ginseng saponin to prepare active saponins Rd, F2, and Rg3 including a compound K.

Abstract: Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.

Abstract: Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.

Abstract: An apparatus and method for a wall clock AI voice assistant, such as a computing device, is provided herein. The wall-mountable electronic clock includes an optical sensor, a microphone, a digital display and a speaker. The optical sensor captures image data representing at least a portion of a user. The microphone receives an audio input from the user when certain criteria is met, such as when the image data representing at least a portion of the user is captured. The digital display provides visual information to the user provided in response to the captured image data or the audio input. The speaker provides audio information provides from a digital voice assistant in response to the captured image data or the audio input.

Abstract: A deposition apparatus for depositing a material on a wafer, the apparatus including a lower shower head; an upper shower head disposed on the lower shower head, the upper shower head facing the lower shower head; and a support structure between the upper shower head and the lower shower head, the wafer being supportable by the support structure, wherein the upper shower head includes upper holes for providing an upper gas onto the wafer, the lower shower head includes lower holes for providing a lower gas onto the wafer, the support structure includes a ring body surrounding the wafer; a plurality of ring support shafts between the ring body and the lower shower head; and a plurality of wafer supports extending inwardly from a lower region of the ring body to support the wafer, and the plurality of wafer supports are spaced apart from one another.

Abstract: A deposition apparatus includes an upper shower head and a lower shower head within a process chamber, the upper shower head and the lower shower head facing each other, a support structure between the upper shower head and the lower shower head, the support structure being connected to the lower shower head to support a wafer, and a plasma process region between the wafer supported by the support structure and the lower shower head, wherein the lower shower head includes lower holes to jet a lower gas in a direction of the wafer, wherein the upper shower head includes upper holes to jet an upper gas in a direction of the wafer, and wherein the support structure includes through opening portions to discharge a portion of the lower gas jetted through the lower holes to a space between the support structure and the upper shower head.

Abstract: An electronic device according to various embodiments of the present disclosure may include a communication module configured to receive a message associated with a plurality of recipients, a memory configured to store one or more contacts; and a processor coupled to the communication module and the memory, the processor configured to identify at least one contact among the one or more contacts that corresponds to at least one recipient among the plurality of recipients, and store the identified at least one contact in a particular group. Other embodiments are possible and several of which are disclosed.

Abstract: A variable resistance memory device includes a plurality of first conductive lines, each of the first conductive lines extends in a first direction, a plurality of second conductive lines are above the first conductive lines, and each of the second conductive lines extend in a second direction transverse to the first direction. A plurality of first memory cells are at intersections where the first and second conductive lines overlap each other, each of the first memory cells including a first variable resistance structure having a first variable resistance pattern, a first sacrificial pattern and a second variable resistance pattern sequentially stacked in the first direction on a first plane. A plurality of third conductive lines are above the second conductive lines, each of the third conductive lines extend in the first direction, and a plurality of second memory cells are at intersections where the second and the third conductive lines overlap each other.

Abstract: Nonvolatile memory devices and methods of fabricating the nonvolatile memory devices are provided. The nonvolatile memory devices may include a stacked structure including a plurality of conductive films and a plurality of interlayer insulating films stacked in an alternate sequence on a substrate and a vertical channel structure extending through the stacked structure. The plurality of conductive films may include a selection line that is closest to the substrate among the plurality of conductive films. The selection line may include a lower portion and an upper portion sequentially stacked on the substrate, and a side of the upper portion of the selection line and a side of the lower portion of the selection line may have different profiles.

Abstract: Disclosed are uses of ginseng saponin, which contains at least 90% of a compound K, Rd, F2, and Rg3 as a main ingredient and has effects in extending the lifespan of the cell, promoting the cell differentiation, increasing the number of red blood cells, and reducing the triglycerides by extracting, heat-treating, and enzyme-converting the ginseng saponin to prepare active saponins Rd, F2, and Rg3 including a compound K.

Abstract: A variable resistance memory device includes a plurality of first conductive layer pattern, a plurality of second conductive layer patterns over the first conductive layer patterns, and a plurality of lower cell structures including a switching element and a variable resistance element, the lower cell structures being formed at intersections at which the first conductive layer patterns and the second conductive layer patterns overlap each other. The first conductive layer patterns, the second conductive layer patterns and the lower cell structures serves as one of a memory cell, a first dummy pattern structure and a second dummy pattern structure.

Abstract: An apparatus for saving power in an access point network is provided. The apparatus includes a communication unit that transmits/receives data to/from an access point device through a wireless short distance communication scheme; an input unit that receives a user input; and a controller that controls to determine whether there is a user input through the input unit, generates a deactivation request message including information related to service non-use of the access point device when the user input is not detected for a preset time or longer, and transmits the deactivation request message to the access point device through the communication unit.

Abstract: A variable resistance memory device includes a plurality of first conductive lines, each of the first conductive lines extends in a first direction, a plurality of second conductive lines are above the first conductive lines, and each of the second conductive lines extend in a second direction transverse to the first direction. A plurality of first memory cells are at intersections where the first and second conductive lines overlap each other, each of the first memory cells including a first variable resistance structure having a first variable resistance pattern, a first sacrificial pattern and a second variable resistance pattern sequentially stacked in the first direction on a first plane. A plurality of third conductive lines are above the second conductive lines, each of the third conductive lines extend in the first direction, and a plurality of second memory cells are at intersections where the second and the third conductive lines overlap each other.

Abstract: A variable resistance memory device includes a plurality of first conductive lines, each of the first conductive lines extends in a first direction, a plurality of second conductive lines are above the first conductive lines, and each of the second conductive lines extend in a second direction transverse to the first direction. A plurality of first memory cells are at intersections where the first and second conductive lines overlap each other, each of the first memory cells including a first variable resistance structure having a first variable resistance pattern, a first sacrificial pattern and a second variable resistance pattern sequentially stacked in the first direction on a first plane. A plurality of third conductive lines are above the second conductive lines, each of the third conductive lines extend in the first direction, and a plurality of second memory cells are at intersections where the second and the third conductive lines overlap each other.

Abstract: A semiconductor diode includes a first semiconductor pattern including a first impurity, a first diffusion barrier pattern on the first semiconductor pattern, an intrinsic semiconductor pattern on the first diffusion barrier pattern, a second diffusion barrier pattern on the intrinsic semiconductor pattern, and a second semiconductor pattern including a second impurity on the second diffusion barrier pattern.

Abstract: An electronic device according to various embodiments of the present disclosure may include a communication module configured to receive a message associated with a plurality of recipients, a memory configured to store one or more contacts; and a processor coupled to the communication module and the memory, the processor configured to identify at least one contact among the one or more contacts that corresponds to at least one recipient among the plurality of recipients, and store the identified at least one contact in a particular group. Other embodiments are possible and several of which are disclosed.

Abstract: A resistive memory device includes a plurality of memory cell pillars arranged in a line in one direction and each having a memory layer and a top electrode layer connected to the memory layer, a top conductive line having a plurality of protrusions extending downwardly and between which pockets in the bottom of the top conductive line are defined, and a plurality of insulating pillars. The protrusions of the top conductive line face and are electrically connected to the memory cell pillars, respectively, so as to be electrically connected to the memory layer through the top electrode layer of the memory cell pillar. The insulating pillars extend from insulating spaces, between side wall surfaces of the memory layers and top electrode layers of the memory cell pillars, into the pockets in the bottom of the top conductive line.