Abstract: A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.

Abstract: Provided are a phase change material containing carbon (C), a memory device including the phase change material, and a method of operating the memory device. The phase change material contains a main compound and an additive, wherein the main compound is In—Sb—Te and the additive includes carbon (C). A content a of the carbon (C) may be 0.005?a?0.30 atomic (at) %. The additive may further contain nitrogen (N), oxygen (O), boron (B), or a transition metal. The additive may include carbide instead of the carbon (C).

Abstract: The present invention relates to uses of Macrolactin A produced by Bacillus polyfermenticus KJS-2 (KCCM 10769P), which is a new bacillus strain, as an antibiotic. Macrolactin A of the present invention, which is produced by Bacillus polyfermenticus KJS-2, shows a broad spectrum of antibiotic activity against a variety of microorganisms and fungi, and is proved to be very efficient for the inhibition of particularly vancomycin-resistant enterococci (VRE) and methicillin-resistant Staphylococcus Aureus (MRSA) that are multidrug-resistant bacteria. The antibiotic Macrolactin A produced by Bacillus polyfermenticus KJS-2, can be used as an excellent antibiotic against vancomycin-resistant enterococci (VRE) and methicillin-resistant Staphylococcus Aureus (MRSA), and thus the present invention is a very useful invention for medical industry.

Abstract: Disclosed herein are novel microbes Thraustochytrium sp. KJS-1 and Bacillus polyfermenticus KJS-2. Also provided is an aquaculture feed additive for use in fisheries, which comprises freeze dried Thraustochytrium sp. KJS-1, freeze dried Bacillus polyfermenticus KJS- 2, and freeze dried Bacillus licheniformis. In addition to providing DHA, an essential nutrient for fish, the aquaculture feed additive shows antibacterial and antifungal activity, thereby preventing fish from dying from bacterial and fungal diseases.

Abstract: A high-pressure liquefied extract of marine algae for producing bioethanol and a method of producing the liquid extract from marine algae under high pressure, and a method of producing the bioethanol from the high-pressure liquid extract by fermentation with yeast are disclosed. According to the production method of bioethanol using marine algae, the high-pressure liquefied extract can be obtained in high yield and fermentation time can be also reduced. Consequently, the yield of bioethanol is increased. Furthermore, the method gives economical and environmentally friendly values from natural marine algae.

Abstract: To provide a microorganism or a plant transformed with a ?-ionone ring-4-ketolase gene and/or ?-ionone ring-3-hydroxylase gene derived from Brevundimonas sp. strain SD-212. The ?-ionone ring-4-ketolase gene and ?-ionone ring-3-hydroxylase gene produced by Brevundimonas sp. strain SD-212 each have a high activity compared with those of known enzymes, and therefore microorganisms transformed with the genes encoding these enzymes can efficiently produce astaxanthin.

Abstract: Disclosed may be a phase change material alloy, a phase change memory device including the same, and methods of manufacturing and operating the phase change memory device. The phase change material alloy may include Si and Sb. The alloy may be a Si—O—Sb alloy further including O. The Si—O—Sb alloy may be SixOySbz, wherein, when x/(x+z) may be x1, 0.05?x1?0.30, 0.00?y?0.50, and x+y+z may be 1. The Si—O—Sb alloy may further comprise an element other than Si, O, and Sb.

Abstract: A phase change material layer includes antimony (Sb) and at least one of indium (In) and gallium (Ga). A phase change memory device includes a storage node including a phase change material layer and a switching device connected to the storage node. The phase change material layer includes Sb and at least one of In and Ga.

Abstract: Provided are a storage node, phase change memory device and methods of manufacturing and operating the same. The storage node may include an electrode, a phase change layer, and an anti-diffusion layer between the electrode and the phase change layer and including a silicide compound. The phase change memory device may include the storage node and a switching device connected to the storage node.

Abstract: Provided are a phase change material layer and a phase change random access memory (PRAM) device including the same. By providing a phase change material layer formed of a III-V family material and a chalcogenide, a PRAM device with a set time shorter than that of a conventional PRAM device and improved retention characteristics can be provided.

Abstract: Provided are a phase change material containing carbon (C), a memory device including the phase change material, and a method of operating the memory device. The phase change material contains a main compound and an additive, wherein the main compound is In—Sb—Te and the additive includes carbon (C). A content a of the carbon (C) may be 0.005?a?0.30 atomic (at) %. The additive may further contain nitrogen (N), oxygen (O), boron (B), or a transition metal. The additive may include carbide instead of the carbon (C).

Abstract: Provided are a phase change layer and a method of forming the phase change layer and a phase change memory device including the phase change layer, and methods of manufacturing and operating the phase change memory device. The phase change layer may be formed of a quaternary compound including an amount of indium (In) ranging from about 15 at. % to about 20 at. %. The phase change layer may be InaGebSbcTed, wherein an amount of germanium (Ge) ranges from about 10 at. %?b?about 15 at. %, an amount of antimony (Sb) ranges from about 20 at. %?c?about 25 at. %, and an amount of tellurium (Te) ranges from about 40 at. %?d?about 55 at. %.

Abstract: Provided are a method of forming a phase change layer, a method of manufacturing a storage node using the method of forming a phase change layer, and a method of manufacturing a phase change memory device using the method of manufacturing a storage node. The method of forming a phase change layer may use an electrochemical deposition (ECD) method. The method of forming the phase change layer may include forming an electrolyte by mixing a solvent and precursors, each precursor containing an element of the phase change layer, dipping an anode plate and a cathode plate in the electrolyte to be spaced apart from each other, wherein the cathode plate may be a substrate on which the phase change layer is to be deposited, setting deposition conditions of the phase change layer; and supplying a voltage between the anode plate and the cathode plate.

Abstract: A method of forming a phase change layer using a Ge compound and a method of manufacturing a phase change memory device using the same are provided. The method of manufacturing a phase change memory device included supplying a first precursor on a lower layer on which the phase change layer is to be formed, wherein the first precursor is a bivalent precursor including germanium (Ge) and having a cyclic structure. The first precursor may be a cyclic germylenes Ge-based compound or a macrocyclic germylenes Ge-based, having a Ge—N bond. The phase change layer may be formed using a MOCVD method, cyclic-CVD method or an ALD method. The composition of the phase change layer may be controlled by a deposition pressure in a range of 0.001 torr-10 torr, a deposition temperature in a range of 150° C. to 350° C. and/or a flow rate of a reaction gas in the range of 0-1 slm.

Abstract: A method of forming a phase change layer may include providing a bivalent first precursor having germanium (Ge), a second precursor having antimony (Sb), and a third precursor having tellurium (Te) onto a surface on which the phase change layer is to be formed. The phase change layer may be formed by CVD (e.g., MOCVD, cyclic-CVD) or ALD. The composition of the phase change layer may be varied by modifying the deposition pressure, deposition temperature, and/or supply rate of reaction gas. The deposition pressure may range from about 0.001-10 torr, the deposition temperature may range from about 150-350° C., and the supply rate of the reaction gas may range from about 0-1 slm. Additionally, the above phase change layer may be provided in a via hole and bounded by top and bottom electrodes to form a storage node.

Abstract: A method of surface treating a phase change layer may include, before forming the phase change layer, forming a coating layer on a surface of a bottom layer on which the phase change layer is to be formed, wherein the coating layer has a chemical structure for contributing to the adherence of an alkyl radical to the surface of the bottom layer. After forming the coating layer, the phase change layer may be formed using an atomic layer deposition (ALD) method.

Abstract: Provided are a method of manufacturing a thin film structure, a method of manufacturing a storage node having the same, a method of manufacturing a phase-change random access memory device having the same and a thin film structure, storage node and phase-change random access memory device formed using the same. The method of manufacturing the thin film structure may include the operations of obtaining a seed layer formed of a chalcogenide alloy, by supplying one or two selected from the group consisting of a Group IV-precursor, a Group V-precursor, and a Group VI-precursor to an upper surface of an amorphous material layer, and forming the thin film by supplying a Group IV-precursor, a Group V-precursor, and a Group VI-precursor to an upper surface of the seed layer.

Abstract: Provided is a fiber ring laser capable of obtaining a back-up laser light and standard light having a wavelength continuously tuned in a single mode with equal spacing of 12.5 GHz, 25 GHz, 50 GHz or 100 GHz recommended by ITU-T Recommendation G. 692 & G. 694.1 in a C-band and an L-band using a fiber tunable etalon filter, an air gap etalon filter and a saturable absorber in an optical fiber laser resonator having a serial ring shape using a C-band optical amplifier and an L-band optical amplifier. The fiber ring laser can generate laser light having a wavelength tuned by more than 70 nm, excellent output power flatness and a source spontaneous emission ratio of more than 70 dB in 361 channels with equal spacing of 25 GHz by applying a bias voltage to a voltage-operated piezoelectric element of a tunable etalon filter. A single longitudinal mode operation of the fiber ring laser can be obtained by using a saturable absorber serving as a narrow-bandwidth filter.

Abstract: Provided is a method for controlling a memory for time deinterleaving in a DMB receive by using byte addressing. The memory control method includes the steps of constructing the memory by the several segments so as to store only sample data used for actual time deinterleaving during a time period corresponding to M+1 frames from a time point r through a time point r+M; storing a plurality of sample data at one memory address by accessing the memory on a segment basis through byte addressing; and generating a byte-based memory address according to a time deinterleaving rule determined by the i value, and reading one of the sample data stored at the memory address and masking and another sample data stored at the memory address according to what order sample data is to be read from the memory address, thereby making it possible to greatly reduce the complexity of a memory address decoder in the memory.

Abstract: A method for surface treatment of lithium manganese oxide for positive electrodes in lithium secondary batteries is provided in which the surface of the lithium manganese oxide is coated with lithium transition metal oxides. The lithium secondary batteries using the coated lithium manganese oxide as an anode material not only solves the problems with the conventional lithium secondary batteries in regard to the lifetime of the electrodes at high temperature and the fast discharge efficiency, but also replace the conventional expensive lithium cobalt oxide to reduce the production cost.