Abstract: A stacked wafer level semiconductor package module includes a semiconductor chip module including first and second semiconductor chips each having a rectangular shape. The first semiconductor chip has first pads disposed along a first short side of a lower surface thereof. The second semiconductor chip has second pads disposed along a first short side of a lower surface thereof. The first and second semiconductor chips are stacked so as to expose the first pad and the second pad on one side of the stacked first and second semiconductor chips. The package also includes a substrate having a first connection pad facing the first pad and a second connection pad facing the second pad. The package also includes a first connection member for connecting the first pad to the first connection pad, and a second connection member for connecting the second pad to the second connection pad.

Abstract: A semiconductor package comprises a semiconductor chip, through electrodes and cooling parts. The semiconductor chip has bonding pads on an upper surface thereof. The through-electrodes are formed in the semiconductor chip. The cooling parts are formed in the semiconductor chip and on the upper surface of the semiconductor chip in order to dissipate heat.

Abstract: Manufacturing a wafer level stack package includes the steps of back-grinding a lower surface of a wafer including a plurality of first semiconductor chips. A support member is attached to a lower surface of the back-grinded wafer. One or more second semiconductor chips are stacked on the respective first semiconductor chips of the back-grinded wafer. First through-electrodes are formed to electrically connect the stacked first semiconductor chips and second semiconductor chips. Third semiconductor chips are attached to uppermost ones of the stacked second semiconductor chips, and the third semiconductor chips have second through-electrodes which are electrically connected to the first through-electrodes and re-distribution lines which are connected to the second through-electrodes. Outside connection terminals are attached to the re-distribution lines of the third semiconductor chips.

Abstract: A method for manufacturing a semiconductor package includes forming a groove in the portion outside of the bonding pad of a semiconductor chip provided with the bonding pad on an upper surface thereof; forming an insulation layer on the side wall of the groove; forming a metal layer over the semiconductor chip so as to fill the groove formed with the insulation layer; etching the metal layer to simultaneously form a through silicon via for filling the groove and a distribution layer for connecting the through silicon via and the bonding pad; and removing a rear surface of the semiconductor chip such that the lower surface of the through silicon via protrudes from the semiconductor chip.

Abstract: A stack package includes a substrate having an upper surface and a lower surface which faces away from the upper surface, a lower stack group, an upper stack group, and connection members. The lower stack group is attached to the upper surface of the substrate and includes at least two semiconductor chips which are stacked in a face-up type to form on or more steps. The upper stack group is disposed over the lower stack group and includes at least two semiconductor chips which are stacked in a face-down type in such a way as to form one or more steps whose direction mirrors the direction of the at least one step of the lower stack group. The connection members electrically connect the semiconductor chips of the lower and upper stack groups to the substrate.

Abstract: An automatic clustering method using an Average-linkage algorithm and a KPower Means algorithm, and a method and apparatus for multi-path clustering required for a spatial channel modeling (SCM) in a wireless communication environment are provided. The automatic clustering method, including: a first step of obtaining an initial cluster centroid using a hierarchical clustering algorithm; a second step of moving the initial cluster centroid using a two dimensional clustering algorithm; a third step of clustering a data set according to the moved initial cluster centroid; and a fourth step of calculating a validation index with respect to the clustered data set and determining an optimal number of clusters.

Abstract: Provided is a liquid crystal display panel having gate drivers. The LCD panel includes a gate line shift circuit setting a gate line scanning order such that the gate lines are sequentially scanned in units of n gate lines with k?1 gate lines between each pair of adjacent gate lines in each unit according to an interleaving method in response to a gate line-on signal received from a timing control unit outside the LCD panel, wherein the LCD panel reproduces source data output from a source driver outside the LCD panel in the gate line scanning order set by the gate line shift circuit. The LCD panel inverts the polarity of a common voltage for every unit of n gate lines, instead of every gate line, thereby reducing power consumption. In addition, since every kth gate line is scanned according to the interleaving method, deterioration of image quality such as a flickering phenomenon can be prevented, which is an advantage of a line inversion driving method.

Abstract: A flip chip package realizes a fine pitch and improves the reliability of a bump joint and a method for manufacturing the same. The flip chip package includes a printed circuit board having a plurality of electrode terminals on one surface thereof; a semiconductor chip located on the printed circuit board in a face-down type and having a plurality of bonding pads; conductive polymers for electrically and mechanically connecting the bonding pads of the semiconductor chip and the electrode terminals of the printed circuit board with each other; and an encapsulant for molding one surface of the printed circuit board including the conductive polymers and the semiconductor chip.

Abstract: A strip level substrate is manufactured by: applying solder resist on a substrate including a plurality of unit substrate divided by a scribe line; and patterning the applied solder resist to expose an electrode terminal and a ball land in each unit substrate, wherein the patterning of the solder resist is performed to be removed together with a solder resist part applied on the scribe line in order to reduce an early warpage of the strip level substrate.

Abstract: Manufacturing a wafer level stack package includes the steps of back-grinding a lower surface of a wafer including a plurality of first semiconductor chips. A support member is attached to a lower surface of the back-grinded wafer. One or more second semiconductor chips are stacked on the respective first semiconductor chips of the back-grinded wafer. First through-electrodes are formed to electrically connect the stacked first semiconductor chips and second semiconductor chips. Third semiconductor chips are attached to uppermost ones of the stacked second semiconductor chips, and the third semiconductor chips have second through-electrodes which are electrically connected to the first through-electrodes and re-distribution lines which are connected to the second through-electrodes. Outside connection terminals are attached to the re-distribution lines of the third semiconductor chips.

Abstract: A semiconductor chip with a chip selection structure suitable for a stacked semiconductor chip includes a semiconductor chip body and a chip selection structure. The chip selection structure includes a chip selection pad disposed over the semiconductor chip body, a main through electrode electrically connected to the chip selection pad, and a sub through electrode interposed between the main through electrode and the chip selection pad. A plurality of the semiconductor chips, each having the same chip selection structure, can be stacked by offsetting the stacked semiconductor chips.

Abstract: A wafer level chip scale package having an enhanced heat exchange efficiency with an EMF shield is presented. The wafer level chip scale package includes a semiconductor chip, an insulation layer, and a metal plate. The semiconductor chip has a plurality of bonding pads on an upper face thereof. The insulation layer is disposed over the upper face of the semiconductor chip and has openings that expose some portions of the bonding pads. The metal plate covers an upper face of the insulation layer and side faces of the semiconductor chip in which the metal plate is electrically insulated from the bonding pads.

Abstract: A stacked wafer level semiconductor package module includes a semiconductor chip module including first and second semiconductor chips each having a rectangular shape. The first semiconductor chip has first pads disposed along a first short side of a lower surface thereof. The second semiconductor chip has second pads disposed along a first short side of a lower surface thereof. The first and second semiconductor chips are stacked so as to expose the first pad and the second pad on one side of the stacked first and second semiconductor chips. The package also includes a substrate having a first connection pad facing the first pad and a second connection pad facing the second pad. The package also includes a first connection member for connecting the first pad to the first connection pad, and a second connection member for connecting the second pad to the second connection pad.

Abstract: A semiconductor package module includes a circuit board including a board body having a receiving portion and conductive patterns formed on the board body; a semiconductor package received in the receiving portion and having conductive terminals electrically connected to the conductive patterns and an s semiconductor chip electrically connected to the conductive terminals; and a connection member electrically connecting the conductive patterns and the conductive terminals.

Abstract: A method for manufacturing a semiconductor package includes forming a groove in the portion outside of the bonding pad of a semiconductor chip provided with the bonding pad on an upper surface thereof; forming an insulation layer on the side wall of the groove; forming a metal layer over the semiconductor chip so as to fill the groove formed with the insulation layer; etching the metal layer to simultaneously form a through silicon via for filling the groove and a distribution layer for connecting the through silicon via and the bonding pad; and removing a rear surface of the semiconductor chip such that the lower surface of the through silicon via protrudes from the semiconductor chip.

Abstract: A flip chip package realizes a fine pitch and improves the reliability of a bump joint and a method for manufacturing the same. The flip chip package includes a printed circuit board having a plurality of electrode terminals on one surface thereof; a semiconductor chip located on the printed circuit board in a face-down type and having a plurality of bonding pads; conductive polymers for electrically and mechanically connecting the bonding pads of the semiconductor chip and the electrode terminals of the printed circuit board with each other; and an encapsulant for molding one surface of the printed circuit board including the conductive polymers and the semiconductor chip.

Abstract: A printed circuit board and a flip chip package using the same are designed to minimize thermal stress due to different thermal coefficients present in areas having metal lines and solder resist versus other areas on the printed circuit board. The printed circuit board includes an insulation layer; a first metal line formed on one surface of the insulation layer and having at one end thereof a bump land and a projection which integrally extends from the bump land; a second metal line formed on the other surface of the insulation layer and having at one end thereof a ball land; a via metal line formed through the insulation layer to connect the first and second metal lines to each other; and solder resists formed on the upper and lower surfaces of the insulation layer to expose the bump land and the ball land.

Abstract: A strip level substrate is manufactured by: applying solder resist on a substrate including a plurality of unit substrate divided by a scribe line; and patterning the applied solder resist to expose an electrode terminal and a ball land in each unit substrate, wherein the patterning of the solder resist is performed to be removed together with a solder resist part applied on the scribe line in order to reduce an early warpage of the strip level substrate.

Abstract: A wafer level chip scale package includes a semiconductor chip having a plurality of pads; a lower insulation layer having a high Young's modulus of 1˜5 GPa formed on the semiconductor chip to expose the plurality of pads; a plurality of metal patterns formed on the lower insulation layer to be connected to the respective pads; an upper insulation layer having a high Young's modulus of 1˜5 GPa formed on the lower insulation layer and the metal patterns to partially expose the metal patterns; and a plurality of solder balls formed on exposed portions of the metal patterns.

Abstract: A flip chip bonded package applicable to a fine pitch technology uses, inter alia, insulative posts instead of using conductive bumps, which correspond to electrodes one by one. The insulative posts are assigned to every two bonding pads for the sake of flip chip bonding. This makes it possible to fabricate flip chip bonded packages very easily without modifying conventional processes. Larger bumps are provided even in the case of a technology having the same pad size and pitch during flip chip bonding. This makes the subsequent attachment process easy and reduces the defective ratio. The insulative posts, when made of a polymer, also act as stress buffers. This improves the reliability of the package.