Abstract: A display device includes: a substrate; a display element on the substrate; a capping layer on the display element; and a thin film encapsulation layer on the capping layer, wherein the capping layer includes: a first capping layer on the display element; a second capping layer on the first capping layer, the second capping layer having a refractive index greater than that of the first capping layer; and a third capping layer on the second capping layer, the third capping layer having a refractive index smaller than that of the second capping layer, wherein the second capping layer has a thickness of 30 nanometers (nm) to 60 nm.

Abstract: Provided is an electronic device that determines a final steering value and a final throttle value for controlling driving of a vehicle through a pre-trained first and second neural networks, and a method for operating the same.

Abstract: Provided is an electronic device that determines a final steering value and a final throttle value for controlling driving of a vehicle through a pre-trained first and second neural networks, and a method for operating the same.

Abstract: There are provided a radiofrequency device for increasing amount of a bioactive substance in a plant cell and a plant cell culture method for increasing amount of useful intracellular secondary metabolites by using the radiofrequency device. The cell culture method of the present invention makes it possible to increase specific secondary metabolites such as daidzein, equol, and the like in a cell and thus can be used for development into various medicines, agricultural pesticides, spices, pigments, food additives, and cosmetics containing bioactive substances. Further, the cell culture method of the present invention improves conventional cell culture methods limitedly used for specific cells or specific metabolites for increasing amount of intracellular bioactive substances and thus can be widely applied to production of cells and secondary metabolites.

Abstract: Provided is an apparatus for controlling an inverter current, and more particularly, to a current controlling apparatus for controlling current of a switching element of an inverter that outputs a 3-phase alternating current. The apparatus for controlling an inverter current includes: an inverter comprising a plurality of current detection switching elements capable of detecting switched and output current, converting a direct current voltage into a 3-phase alternating current by turning the plurality of current detection switching elements on and off; an AD converter for directly receiving an input of an output current of an output terminal of each of the plurality of current detection switching elements as a detection current and converting the detection current into a detection signal value in digital form; and a control unit for controlling on and off of the plurality of current detection switching elements by using the detection signal value.

Abstract: There are provided a radiofrequency device for increasing amount of a bioactive substance in a plant cell and a plant cell culture method for increasing amount of useful intracellular secondary metabolites by using the radiofrequency device. The cell culture method of the present invention makes it possible to increase specific secondary metabolites such as daidzein, equol, and the like in a cell and thus can be used for development into various medicines, agricultural pesticides, spices, pigments, food additives, and cosmetics containing bioactive substances. Further, the cell culture method of the present invention improves conventional cell culture methods limitedly used for specific cells or specific metabolites for increasing amount of intracellular bioactive substances and thus can be widely applied to production of cells and secondary metabolites.

Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.

Abstract: Example embodiments relate to a fin-type graphene device. The fin-type graphene device includes a substrate, a graphene channel layer substantially vertical to the substrate, a gate insulating layer that covers one side surface of the graphene channel layer, a gate electrode on the gate insulating layer, and a source electrode and a drain electrode that are formed separately from each other on other side surface of the graphene channel layer.

Abstract: There are provided a radiofrequency device for increasing amount of a bioactive substance in a plant cell and a plant cell culture method for increasing amount of useful intracellular secondary metabolites by using the radiofrequency device. The cell culture method of the present invention makes it possible to increase specific secondary metabolites such as daidzein, equol, and the like in a cell and thus can be used for development into various medicines, agricultural pesticides, spices, pigments, food additives, and cosmetics containing bioactive substances. Further, the cell culture method of the present invention improves conventional cell culture methods limitedly used for specific cells or specific metabolites for increasing amount of intracellular bioactive substances and thus can be widely applied to production of cells and secondary metabolites.

Abstract: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract: Methods of fabricating graphene using an alloy catalyst may include forming an alloy catalyst layer including nickel on a substrate and forming a graphene layer by supplying hydrocarbon gas onto the alloy catalyst layer. The alloy catalyst layer may include nickel and at least one selected from the group consisting of copper, platinum, iron and gold. When the graphene is fabricated, a catalyst metal that reduces solubility of carbon in Ni may be used together with Ni in the alloy catalyst layer. An amount of carbon that is dissolved may be adjusted and a uniform graphene monolayer may be fabricated.

Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm?3, and a depletion width of less than or equal to 3 nm.

Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the graphene layer and the semiconductor substrate.

Abstract: A memory device includes a graphene switching device having a source electrode, a drain electrode and a gate electrode. The graphene switching device includes a Schottky barrier formed between the drain electrode and a channel in a direction from the source electrode toward the drain electrode. The memory device need not include additional storage element.

Abstract: A switching device includes a semiconductor layer, a graphene layer, a gate insulation layer, and a gate formed in a three-dimensional stacking structure between a first electrode and a second electrode formed on a substrate.

Abstract: A graphene electronic device includes a graphene channel layer on a substrate, a source electrode on an end portion of the graphene channel layer and a drain electrode on another end portion of the graphene channel layer, a gate oxide on the graphene channel layer and between the source electrode and the drain electrode, and a gate electrode on the gate oxide. The gate oxide has substantially the same shape as the graphene channel layer between the source electrode and the drain electrode.

Abstract: A method of transferring graphene includes patterning an upper surface of a substrate to form at least one trench therein, providing a graphene layer on the substrate, the graphene layer including an adhesive liquid thereon, pressing the graphene layer with respect to the substrate, and removing the adhesive liquid by drying the substrate.

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.