Abstract: A display device includes a display panel, a backlight unit supplying light to the display panel, and a conversion sheet located between the backlight unit and the display panel. The conversion sheet includes at least one conversion pattern. A top portion of the at least one conversion pattern has a greater area than a bottom portion the at least one conversion pattern. The at least one conversion pattern includes alternately stacked at least one first conversion layer having a first refractive index and at least one second conversion layer having a second refractive index different from the first refractive index.

Abstract: An apparatus and method for generating an electrical circuit of semiconductor channel resistor including a first passive element part including a resistor and a capacitor connected in parallel between a first port and a second port, and an ohmic resistor connected in series to the resistor and the capacitor which are connected in parallel are provided. The apparatus includes a substrate selection part configured to receive a selected substrate item; a resistor selection part configured to receive a selected resistor item; a capacitor selection part configured to receive a selected capacitor item; and a circuit generating part configured to generate an electrical circuit from the selected substrate item, the selected resistor item, and the selected capacitor item.

Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Abstract: Provided is a direct cooling device for an integrated circuit configured to form a direct cooling portion with a flow channel through which cooling fluid may flow in a through via hole of a substrate constituting the integrated circuit, and to couple the substrate to a heat sink unit through a bonding portion formed integrally with the direct cooling portion, unlike the prior art in which only a ground circuit is possible through the through via hole, which derives the effect of increasing product reliability due to improved thermal management efficiency of the integrated circuit by directly cooling the semiconductor device as well as the ground circuit, and the effect of simplifying and miniaturizing the structure by implementing the cooling function using a circuit for grounding the semiconductor device even without forming an additional flow path structure for cooling the semiconductor device.

Abstract: A direct cooling type semiconductor package unit includes a substrate made of a material capable of manufacturing a semiconductor device, and having a material layer for forming the semiconductor device stacked on one side of the substrate, and a flow channel through which a cooling fluid flows formed on the other side of the substrate to enable direct cooling of the semiconductor device using the cooling fluid; a packaging block disposed at a position spaced apart from the substrate for packaging the semiconductor device, and having an electrode electrically connected to the semiconductor device through wiring and placed thereon to be insulated; a heat sink unit disposed on a lower side of the packaging block and having a fluid movement region formed at a position corresponding to a flow channel of the substrate; and a thin film type structure disposed between the substrate and the heat sink unit for coupling between the substrate and the heat sink unit and being moldable to have pattern structures of variou

Abstract: A display device can include a light emitting portion positioned in a display area and including a light emitting element, a transparent portion positioned in the display area, and a switching portion positioned on the light emitting portion and the transparent portion. The switching portion includes a first transparent electrode, a liquid crystal layer positioned on the first transparent electrode, and a second transparent electrode positioned on the liquid crystal layer. The display device is capable of achieving excellent light efficiency in a mirror mode while being capable of switching between a transparent mode and the mirror mode.

Abstract: The present disclosure relates to a light control film and a display device including the same, and more particularly, a light control film includes a transparent resin layer including a plurality of grooves which is disposed to be spaced apart from each other; and a plurality of light shielding units disposed in the plurality of grooves, and each of the plurality of light shielding units includes a black resin and a plurality of dispersion particles dispersed in the black resin and the dispersion particles have a structure in which a plurality of second hollow particles is coupled onto a surface of a first hollow particle through a linking group and a size of the second hollow particle is smaller than a size of the first hollow particle.

Abstract: Provided is an organic light emitting display device. The organic light emitting display device comprises a display panel; and an optical laminate disposed on the display panel and including a multi-functional layer. The multi-functional layer contains a liquid crystal mixture including a liquid crystal compound and two or more types of dichroic dyes, below the multi-functional layer, the liquid crystal compound is contained, but the two or more types of dichroic dyes are not included and above the multi-functional layer, the two or more types of dichroic layers are contained.

Abstract: A protection system of ship's power distribution system, when a fault occurs in the feeder preset to be in charge of the third circuit breaker module, the relay of the third circuit breaker module trips the circuit breaker based on a magnitude and a direction of a fault current, and to transmit a power distribution maintenance signal to the relay of the second circuit breaker module. When a fault occurs in the switchboard preset to be in charge of the second circuit breaker module, the relays of the second and third circuit breaker modules trip the circuit breaker based on a magnitude and a direction of a fault current and the relay of the second circuit breaker module transmit a power distribution maintenance signal to the relay of the third circuit breaker module preset based on the magnitude and direction of the fault current.

Abstract: A display device for switching a viewing angle, can include a display panel, a polarizing plate disposed on the display panel, a light path control cell disposed on the polarizing plate and including a liquid crystal layer, and a light path conversion film disposed on the light path control cell and including a plurality of molecules including a polarization alignment dye. An absorption axis of the polarizing plate can be substantially perpendicular to an absorption axis of the light path conversion film. The display device can switch to a shared mode or a shielding mode depending on whether or not a voltage is applied to the light path control cell, thereby providing the display device that switches its viewing angle effectively.

Abstract: An electronic device is provided. The electronic device includes a communicator; a memory storing one or more instructions; and a processor electrically connected to the communicator and the memory, wherein the processor executes the one or more instructions to group a plurality of electronic devices into one group, control the communicator to receive cost information from at least one electronic device included in the group, sum the received cost information, distribute the summed cost information based on a number of the plurality of electronic devices, and control the communicator to transmit the distributed cost information to the plurality of electronic devices.

Abstract: The present invention improves a heat dissipation property of a semiconductor device by transferring hexagonal boron nitride (hBN) with a two-dimensional nanostructure to the semiconductor device. A semiconductor device of the present invention includes a substrate having a first surface and a second surface, a semiconductor layer formed on the first surface of the substrate, an hBN layer formed on at least one surface of the first surface and the second surface of the substrate, and a heat sink positioned on the second surface of the substrate. A radiation rate of heat generated during driving of an element is increased to decrease a reduction in lifetime of a semiconductor device due to a temperature increase. The semiconductor device has a structure and configuration which are very effective in improving a rapid temperature increase due to heat generated by high-power semiconductor devices.

Abstract: The present disclosure relates to a privacy film and a display device including the privacy film, and more specifically, to a privacy film capable of reducing a viewing angle by including a first substrate, a first electrode disposed on the first substrate, a plurality of light blocking patterns disposed on the first electrode, a light transmission layer disposed on the first electrode and the plurality of light blocking patterns and including a plurality of capsules, a second electrode disposed on the light transmission layer, and a second substrate disposed on the second electrode, and a display device including the privacy film.

Abstract: A method of manufacturing a high-electron-mobility transistor device is provided. The method includes sequentially forming a transition layer and a semiconductor layer on a substrate, etching a portion of a surface of the semiconductor layer to form a barrier layer region having a certain depth and forming a barrier layer in the barrier layer region, forming a source electrode and a drain electrode on a 2-dimensional electron gas (2-DEG) layer upward exposed at a surface of the semiconductor layer, in defining the 2-DEG layer formed along an interface between the semiconductor layer and the barrier layer, forming a passivation layer on the semiconductor layer, the barrier layer, the source electrode, and the drain electrode and etching a portion of the passivation layer to upward expose the source electrode, the drain electrode, and the barrier layer, and forming a gate electrode on the upward exposed barrier layer.

Abstract: Provided is a privacy protection film. The privacy protection film includes a transparent base substrate, a light control layer disposed on the transparent base substrate and including a plurality of optical pattern structures each having an upwardly protruding prism shape, a first electrode disposed on the light control layer, a second electrode spaced apart from the first electrode, and a variable light diffusion layer disposed between the first electrode and the second electrode and formed of a polymer dispersed liquid crystal (PDLC).

Abstract: An apparatus and method for generating an electrical circuit of semiconductor channel resistor including a first passive element part including a resistor and a capacitor connected in parallel between a first port and a second port, and an ohmic resistor connected in series to the resistor and the capacitor which are connected in parallel are provided. The apparatus includes a substrate selection part configured to receive a selected substrate item; a resistor selection part configured to receive a selected resistor item; a capacitor selection part configured to receive a selected capacitor item; and a circuit generating part configured to generate an electrical circuit from the selected substrate item, the selected resistor item, and the selected capacitor item.

Abstract: Provided is a single pole double through (SPDT) switch including a series switching unit including first and second series switching elements commonly connected to a common input port, and a shunt switching unit including a plurality of shunt switching elements connected in parallel to a first signal path connecting the common input port to a first output port and a second signal path connecting the common input port to a second output port, wherein first and second inductors are respectively connected to gate terminals of the first and second series switching elements.

Abstract: Provided is an amplification circuit for amplifying an input signal. The amplification circuit includes an input stage including an input matching circuit that receives the input signal and an input attenuation circuit that attenuates a gain for the input signal outside an operating frequency band of the amplification circuit, a transistor that amplifies the input signal provided from the input stage, and an output stage including an output matching circuit that receives a signal amplified by the transistor and an output attenuation circuit that attenuates the gain for the input signal outside the operating frequency band of the amplification circuit, and the input attenuation circuit includes a first resistor and a second resistor that are connected to a ground voltage, a first passive element connected between the input matching circuit and the second resistor, and a second passive element connected between the first passive element and the first resistor.

Abstract: The present disclosure relates a privacy film and a display device including the privacy film. More specifically, by including a light collector including a plurality of first light blocking patterns arranged to be spaced apart from one another, an adhesive layer disposed on the light collector and having at least one first groove in at least a part overlapping the plurality of first light blocking patterns, and a light diffuser disposed on the adhesive layer and including a plurality of capsules, the privacy film and the display device including the privacy film can prevent light discharge efficiency of the privacy film from being degraded and be easily reworked.