Abstract: Provided are a vehicle sensor cleaning apparatus and a control method thereof. The vehicle sensor cleaning apparatus includes a liquid sprayer configured to spray washer fluid on at least one sensor arranged in a vehicle, an air sprayer configured to spray air on the at least one sensor, a liquid controller configured to control washer fluid spraying of the liquid sprayer, and an air controller configured to control air spraying of the air sprayer.

Abstract: A positive electrode active material precursor having a uniform particle size distribution and represented by Formula 1, wherein a percentage of fine powder with an average particle diameter (D50) of 1 ?m or less is generated when the positive electrode active material precursor is rolled at 2.5 kgf/cm2 is less than 1%, and an aspect ratio is 0.93 or more, and a method of preparing the positive electrode active material precursor [NixCoyM1zM2w](OH)2 ??[Formula 1] in Formula 1, 0.5?x<1, 0<y?0.5, 0<z?0.5, and 0?w?0.1, M1 includes at least one selected from the group consisting of Mn and Al, and M2 includes at least one selected from the group consisting of Zr, B, W, Mo, Cr, Nb, Mg, Hf, Ta, La, Ti, Sr, Ba, Ce, F, P, S, and Y. A method of preparing the positive electrode active material precursor is also provided.

Abstract: An apparatus for controlling a discharge pressure of a fluid includes: a pump configured to suck the fluid through an inlet or to discharge the sucked fluid through an outlet; a distributor connected to the pump and to an injection nozzle provided by a sensor and configured to distribute the fluid discharged from the pump to the sensor; and a controller. The controller is configured to control the pump to operate selectively in accordance with detection of contamination of the sensor and to control operation of the distributor to be forcibly delayed during operation of the pump such that the fluid distributed to the sensor, when detected as being contaminated, is controlled to reach a selected required discharge pressure of different required discharge pressures selected in accordance with water amount information and a degree of contamination of the sensor.

Abstract: Embodiments relate to laser welding methods, monitoring methods, and monitoring systems for a secondary battery. A laser welding method for a secondary battery includes performing laser welding on a positive electrode base having a thin-film shape in which a plurality of positive electrode base tabs are formed at a side, a negative electrode base having a thin-film shape in which a plurality of negative electrode base tabs are formed at a side, and a thin-film multi-tab to be joined to each of the positive electrode base and the negative electrode base, a welded portion in which the multi-tab is welded with the positive electrode base and the negative electrode base being melting-joined by using a laser such that a plurality of welding spots is formed on the welded portion.

Abstract: A wafer level package includes: a substrate; an element portion disposed on one surface of the substrate; a cap disposed on the substrate to cover the element portion; a connection portion electrically connected to the element portion; and a bonding portion disposed on an outer side of the connection portion, wherein the bonding portion is disposed on a first surface of one of the substrate and the cap, wherein one end portion of the connection portion is disposed on a second surface having a step difference from the first surface, and wherein the connection portion and the bonding portion are formed of a eutectic material.

Abstract: An embodiment solid electrolyte includes a first compound and a second compound. The first compound is represented by a first chemical formula Li7-aPS6-a(X11-bX2b)a, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, and wherein 0<a?2 and 0<b<1, and the second compound is represented by a second chemical formula Li7-cP1-2dMdS6-c-3d(X11-eX2e)c, wherein X1 and X2 are the same or different and each represents F, Cl, Br, or I, wherein M represents Ge, Si, Sn, or any combination thereof, and wherein 0<c?2, 0<d<0.5, and 0<e<1.

Abstract: An apparatus for manufacturing a secondary battery includes: an index table configured to receive a secondary battery cell, the secondary battery cell including an electrode assembly, a can accommodating the electrode assembly, and an electrode tab between the electrode assembly and the can to electrically connect the electrode assembly to the can; a laser scanner configured to irradiate laser onto an outer surface of the can to weld the electrode tab to the can; and a controller configured to variably control the laser scanner according to an operation of the index table.

Abstract: The present specification relates to a heterocyclic compound represented by Chemical Formula 1 and an organic light emitting device including the same.

Abstract: A communication apparatus is provided to include an apparatus enclosure that includes a substrate seating surface and at least one or more connection grooves formed on the substrate seating surface, a first printed circuit board disposed on the substrate seating surface, a second printed circuit board disposed on the substrate seating surface on one side of the first printed circuit board, and at least one or more connectors disposed within the connection groove and configured to electrically connect the first printed circuit board and the second printed circuit board.

Abstract: The present disclosure relates to an electronic device, and more specifically, to an electronic device including a printed circuit board including a heat-generating element arranged on one surface thereof, and a heat transfer coin provided such that one surface of the heat transfer coin comes into contact with a portion of the other surface of the printed circuit board, opposite to the heat-generating element, so as to dissipate heat generated from the heat-generating element. Accordingly, the present disclosure provides an advantage of improving heat dissipation performance without increasing the thickness of the printed circuit board.

Abstract: The present invention relates to a signal shielding apparatus and an antenna apparatus including same, and in particular, comprises a shield cover which is stacked and disposed on a printed board assembly (hereinafter, abbreviated to “PBA”), in which a plurality of signal-related components are mounted on one side thereof to prevent leakage of a signal from the plurality of signal-related components, wherein a grooved shield cover seating groove is formed in one surface of the PBA, and an insertion end insertably seated in the shield cover seating groove is integrally formed in the other surface from among one surface and the other surface of the shield cover, the other surface facing the one surface of the PBA, thereby providing advantages in that an increase in the manufacturing cost may be prevented, EMI shielding may be facilitated, and heat dissipation performance may be significantly improved.

Abstract: Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.

Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.

Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.

Abstract: Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.

Abstract: A terminal assembly of a driving motor includes: a support ring surrounding a stator core to which bobbins are coupled, the bobbins being configured to allow stator coils to be wound thereon; a first sub-assembly disposed on the support ring to surround the bobbins; and a second sub-assembly connected to the first sub-assembly, the second sub-assembly including fixing portions inserted into coupling recesses formed in the bobbins. Three-phase bus bars connected to three-phase lead wires of the stator coils are inserted into the first sub-assembly and an N-phase bus bar connected to N-phase lead wires of the stator coils is inserted into the second sub-assembly.

Abstract: Various embodiments of the present disclosure relate to a non-volatile memory device including a sense amplifier and an operation method thereof. The non-volatile memory device may include: a memory cell array comprising a plurality of memory cells; and the sense amplifier configured to read data of the plurality of memory cells and output the read data. The sense amplifier may include: a first stage sense amplifier configured to sense a voltage difference between a reference voltage and a voltage of a bit line connected to at least one memory cell among the plurality of memory cells, and perform a primary amplification of the sensed voltage difference; and a second stage sense amplifier configured to perform a secondary amplification of a first result of the primary amplification and output a second result of the secondary amplification.

Abstract: A non-volatile memory device includes a first fuse cell array and a second fuse cell array, spaced from each other; a first ground ring region and a second ground ring region disposed to surround the first fuse cell array and the second fuse cell array, respectively; a third ground ring region configured to connect the first ground ring region and the second ground ring region; a power ring region disposed to surround the first ground ring region and the second ground ring region; and an address decoder, disposed between the first fuse cell array and the second fuse cell array, configured to supply a word line signal to each of the first fuse cell array and the second fuse cell array. The ground ring regions supply a ground voltage to each of the first fuse cell array and the second fuse cell array.

Abstract: An eFuse cell is provided. The eFuse cell may include a first PMOS transistor and a first NMOS transistor configured to receive a programmed state selection (BLOWB) signal, a second PMOS transistor and a second NMOS transistor configured to receive a write word line bar (WWLB) for a program operation, a first read NMOS transistor and a second read NMOS transistor configured to receive a read word line (RWL) for a read operation, a program transistor configured to control a program current to flow for a fusing operation, and an eFuse connected between the first read NMOS transistor and the second read NMOS transistor.

Abstract: A semiconductor device includes a first word line configured to perform a writing operation or a programing operation, a second word line configured to perform a read operation, a first switching device including a first gate electrode and a first node, a second switching device comprising a second gate electrode and a second node, an electrical fuse (e-fuse) disposed between the first node and the second node, and a diode coupled to the first node and the first word line, wherein the first gate electrode and the second gate electrode are coupled to the second word line.