Abstract: Disclosed are memory devices including a two-dimensional (2D) material, methods of manufacturing the same, and methods of operating the same. A memory device may include a transistor, which includes graphene and 2D semiconductor contacting the graphene, and a capacitor connected to the transistor. The memory device may include a first electrode, a first insulation layer, a second electrode, a semiconductor layer, a third electrode, a second insulation layer, and a fourth electrode which are sequentially arranged. The second electrode may include the graphene, and the semiconductor layer may include the 2D semiconductor. Alternatively, the memory device may include first and second electrode elements, a graphene layer between the first and second electrode elements, a 2D semiconductor layer between the graphene layer and the first electrode element, and a dielectric layer between the graphene layer and the second electrode.

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.

Abstract: According to example embodiments, a field effect transistor includes a graphene channel layer on a substrate. The graphene channel layer defines a slit. A source electrode and a drain electrode are spaced apart from each other and arranged to apply voltages to the graphene channel layer. A gate insulation layer is between the graphene channel layer and a gate electrode.

Abstract: A graphene device including separated junction contacts and a method of manufacturing the same are disclosed. The graphene device is a field effect transistor (FET) in which graphene is used as a channel. A source electrode and a drain electrode do not directly contact the graphene channel, and junction contacts formed by doping semiconductor are separately disposed between the graphene channel and the source electrode and between the graphene channel and the drain electrode. Therefore, in an off state where a voltage is not applied to a gate electrode, due to a barrier between the graphene channel and the junction contacts, carriers may not move. As a result, the graphene device may have low current in the off state.

Abstract: Inverters including two-dimensional (2D) material, methods of manufacturing the same, and logic devices including the inverters. An inverter may include a first transistor and a second transistor that are connected to each other, and the first and second transistor layers may include 2D materials. The first transistor may include a first graphene layer and a first 2D semiconductor layer contacting the first graphene layer, and the second transistor may include a second graphene layer and a second 2D semiconductor layer contacting the second graphene layer. The first 2D semiconductor layer may be a p-type semiconductor, and the second 2D semiconductor layer may be an n-type semiconductor. The first 2D semiconductor layer may be arranged at a lateral side of the second 2D semiconductor layer.

Abstract: A method of transmitting and receiving radio resource information is disclosed, by which a mobile terminal is able to quickly access a mobile communication system. The present invention includes transmitting a paging message to locate a specific mobile terminal by including information for a radio resource allocated to the mobile terminal in the paging message receiving a response signal for the paging message transmitted according to the information for the radio resource, and performing a connection to the mobile terminal according to the response signal.

Abstract: A method of transmitting and receiving radio resource information is disclosed, by which a mobile terminal is able to quickly access a mobile communication system. The present invention includes transmitting a paging message to locate a specific mobile terminal by including information for a radio resource allocated to the mobile terminal in the paging message receiving a response signal for the paging message transmitted according to the information for the radio resource, and performing a connection to the mobile terminal according to the response signal.

Abstract: According to example embodiments, an electrode structure includes a graphene layer on a semiconductor layer and an electrode containing metal on the graphene layer. A field effect transistor (FET) may include the electrode structure.

Abstract: A graphene device includes: a semiconductor substrate having a first region and a second region; a graphene layer on the first region, but not on the second region of the semiconductor substrate; a first electrode on a first portion of the graphene layer; a second electrode on a second portion of the graphene layer; an insulating layer between the graphene layer and the second electrode; and a third electrode on the second region of the semiconductor substrate. The semiconductor substrate has a tunable Schottky barrier formed by junction of the first electrode, the graphene layer, and the semiconductor substrate.

Abstract: A method for creating an image to be printed is provided. A first halftone pattern and a second halftone pattern for respective first and second periodic clustered dot halftone regions of the image are selected. The regions have respective frequencies and one of the frequencies is higher than the other frequency. A transition region is determined. The transition region includes a boundary between the two regions and includes additional portions of the two regions beyond the boundary. The two halftone patterns are blended with each other in the transition region based on a blending ratio of the two halftones where the blending ratio changes as a function of distance between the edges of the transition region.

Abstract: A graphene device and an electronic apparatus including the same are provided. According to example embodiments, the graphene device includes a transistor including a source, a gate, and a drain, an active layer through which carriers move, and a graphene layer between the gate and the active layer. The graphene layer may be configured to function both as an electrode of the active layer and a channel layer of the transistor.

Abstract: A graphene memory includes a source and a drain spaced apart from each other on a conductive semiconductor substrate, a graphene layer contacting the conductive semiconductor substrate and spaced apart from and between the source and the drain, and a gate electrode on the graphene layer. A Schottky barrier is formed between the conductive semiconductor substrate and the graphene layer such that the graphene layer is used as a charge-trap layer for storing charges.

Abstract: According to an example embodiment, a method of operating a semiconductor device having a variable resistance device includes: applying a first voltage to the variable resistance device to change a resistance value of the variable resistance device from a first resistance value to a second resistance value that is different from the first resistance value; sensing a first current flowing through the variable resistance device to which the first voltage is applied; determining a second voltage used for changing the variable resistance device from the second resistance value to the first resistance value, based on a dispersion of the sensed first current; and applying the determined second voltage to the variable resistance device.

Abstract: A method of transmitting and receiving radio resource information is disclosed, by which a mobile terminal is able to quickly access a mobile communication system. The present invention includes transmitting a paging message to locate a specific mobile terminal by including information for a radio resource allocated to the mobile terminal in the paging message receiving a response signal for the paging message transmitted according to the information for the radio resource, and performing a connection to the mobile terminal according to the response signal.

Abstract: A method of transmitting and receiving radio resource information is disclosed, by which a mobile terminal is able to quickly access a mobile communication system. The present invention includes transmitting a paging message to locate a specific mobile terminal by including information for a radio resource allocated to the mobile terminal in the paging message receiving a response signal for the paging message transmitted according to the information for the radio resource, and performing a connection to the mobile terminal according to the response signal.

Abstract: According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 1019 cm?3, and a depletion width of less than or equal to 3 nm.

Abstract: A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode.

Abstract: Provided is a pneumatic tire which can fundamentally prevent the phenomenon in which cracks are generated in the bottoms of grooves and the areas where the side walls of blocks meet the bottoms of grooves, can suppress irregular abrasion of the tread, can enhance the overall rigidity of the tread, and can also enhance the drainage performance. The pneumatic tire of the invention includes a tread, side walls and bead sections, with a large number of blocks compartmentalized by grooves being formed on the surface of the tread, and also includes reinforcing ribs that are positioned inside a groove and have their lower parts joined with the bottom of the groove, with one lateral surface of a reinforcing rib and one side wall of the groove being in contact.

Abstract: A method of preparing graphene includes forming a silicon carbide thin film on a substrate, forming a metal thin film on the silicon carbide thin film, and forming a metal composite layer and graphene on the substrate by heating the silicon carbide thin film and the metal thin film.

Abstract: According to example embodiments, a graphene switching devices having a tunable barrier includes a semiconductor substrate that includes a first well doped with an impurity, a first electrode on a first area of the semiconductor substrate, an insulation layer on a second area of the semiconductor substrate, a graphene layer on the insulation layer and extending onto the semiconductor substrate toward the first electrode, a second electrode on the graphene layer and insulation layer, a gate insulation layer on the graphene layer, and a gate electrode on the gate insulation layer. The first area and the second area of the semiconductor substrate may be spaced apart from each other. The graphene layer is spaced apart from the first electrode. A lower portion of the graphene layer may contact the first well. The first well is configured to form an energy barrier between the graphene layer and the first electrode.