Abstract: An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

Abstract: A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

Abstract: An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.

Abstract: The present invention provides a method to form Group IBIIIAVIA solar cell absorber layers on continuous flexible substrates. In a preferred aspect, the method forms a Group IBIIIAVIA absorber layer for manufacturing photovoltaic cells by providing a workpiece having a precursor layer formed over a substrate, the precursor layer including copper, indium, gallium and selenium; heating the precursor layer to a first temperature; reacting the precursor layer at the first temperature for a first predetermined time to transform the precursor layer to a partially formed absorber structure; cooling down the partially formed absorber structure to a second temperature, wherein both the first temperature and the second temperature are above 400° C.; and reacting the partially formed absorber structure at the second temperature for a second predetermined time, which is longer than the first predetermined time, to form a Group IBIIIAVIA absorber layer.

Abstract: An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

Abstract: The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.

Abstract: A method of forming a Group IBIIIAVIA absorber layer on a base for manufacturing a solar cell is provided. The method, in one embodiment, includes forming a precursor stack by electroplating a first metallic layer on the base. The first metallic layer includes at least one of copper, indium and gallium. A first selenium layer is deposited on the first metallic layer, and an interlayer is electrodeposited on the selenium layer. The interlayer includes one of gold and silver. A second metallic layer is electrodeposited on the interlayer, the second metallic layer comprising at least one of copper indium and gallium. The interlayer inhibits dissolution of selenium during the electrodeposition of the second metallic layer. Such prepared precursor stack is reacted at a temperature range of 300-600° C. to form the Group IBIIIAVIA absorber layer.

Abstract: The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

Abstract: A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

Abstract: The present invention provides a method and precursor structure to form a Group IBIIIAIVA solar cell absorber layer. The method includes forming a Group IBIIIAVIA compound layer on a base by forming a precursor layer on the base through electrodepositing three different films, and then reacting the precursor layer with selenium to form the Group IBIIIAVIA compound layer on the base. The three films, described by the precursor layer, include in one embodiment a first alloy film comprising copper, indium and gallium, a second alloy film comprising copper and selenium formed on the first alloy film; and a selenium film formed on the second alloy film.

Abstract: The present invention relates to methods and apparatus for providing composition control to thin compound semiconductor films for radiation detector and photovoltaic applications. In one aspect of the invention, there is provided a method in which the molar ratio of the elements in a plurality of layers are detected so that tuning of the multi-element layer can occur to obtain the multi-element layer that has a predetermined molar ratio range. In another aspect of the invention, there is provided a method in which the thickness of a sub-layer and layers thereover of Cu, In and/or Ga are detected and tuned in order to provide tuned thicknesses that are substantially the same as pre-determined thicknesses.

Abstract: The present inventions relate to selenium containing electrodeposition solutions used to manufacture solar cell absorber layers. In one aspect is described an electrodeposition solution to electrodeposit a Group IB-Group VIA thin film that includes a a solvent; a Group IB material source; a Group VIA material source; and at least one complexing that forms a complex ion of the Group IB material. Also described are methods of electroplating using electrodeposition solutions.

Abstract: The present invention provides a method and precursor structure to form a solar cell absorber layer. The method includes electrodepositing a first layer including a film stack including at least a first film comprising copper, a second film comprising indium and a third film comprising gallium, wherein the first layer includes a first amount of copper, electrodepositing a second layer onto the first layer, the second layer including at least one of a second copper-indium-gallium-ternary alloy film, a copper-indium binary alloy film, a copper-gallium binary alloy film and a copper-selenium binary alloy film, wherein the second layer includes a second amount of copper, which is higher than the first amount of copper, and electrodepositing a third layer onto the second layer, the third layer including selenium; and reacting the precursor stack to form an absorber layer on the base.

Abstract: An electrochemical deposition method and electrolyte to plate uniform, defect free and smooth gallium films are provided. In a preferred embodiment, the electrolyte may include a solvent that comprises water and at least one monohydroxyl alcohol, a gallium salt, and an acid to control the solution pH and conductivity. The method electrodeposits a gallium film possessing sub-micron thickness on a conductive surface. Such gallium layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells.

Abstract: The present invention provides methods and apparatus for deposition of contact layers for Group IBIIIAVIA solar cells using electrodeposition and/or electroless deposition approaches, and solar cells that result therefrom. In one aspect of the invention, the solar cell that results includes a substrate, a stacked contact layer that includes a bottom film coated on a surface of the substrate and a top film formed by electroplating over the bottom film, wherein the top film comprises at least one of Ru, Ir and Os. A Group IBIIIAVIA compound film formed over the top film. In another aspect of the invention, there is provided a method of depositing a stacked layer of a plurality of films in a plurality of sequentially disposed depositing units onto a continuously moving roll-to-roll sheet, preferably using electroplating of a stacked contact layer.

Abstract: An electrochemical deposition method to form uniform and continuous Group IIIA material rich thin films with repeatability is provided. Such thin films are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the Group IIIA material rich thin film is deposited on an interlayer that includes 20-90 molar percent of at least one of In and Ga and at least 10 molar percent of an additive material including one of Cu, Se, Te, Ag and S. The thickness of the interlayer is adapted to be less than or equal to about 20% of the thickness of the Group IIIA material rich thin film.

Abstract: An electrochemical co-deposition method and solution to plate uniform, defect free and smooth (In,Ga)—Se films with repeatability and controllable molar ratios of (In,Ga) to Se are provided. Such layers are used in fabrication of semiconductor and electronic devices such as thin film solar cells. In one embodiment, the present invention provides an alkaline electrodeposition solution that includes an In salt, a Se acid or oxide, a tartrate salt as complexing agent for the In species, and a solvent to electrodeposit an In—Se film possessing sub-micron thickness on a conductive surface.

Abstract: Described is an electrodeposition solution for deposition of a Group IB-IIIA thin film on a conductive surface. In a preferred embodiment, the electrodeposition solution comprises a solvent; a Group IB material source that dissolves in the solvent and provides a Group IB material; a Group IIIA material source that dissolves in the solvent and provides a Group IIIA material; and a blend of at least two complexing agents, one of the at least two complexing agent forming a complex with the Group IB material and the other one of the at least two complexing agent forming a complex with the Group IIIA material; wherein the pH of the solution is at least 7.