Abstract: An electroplating solution to electroplate a selenium containing film on a conductive surface is provided. The electroplating solution includes a solvent, a selenium source material that dissolves in the solvent; an anti-coagulation agent that inhibits Se particle growth and promotes Se particle dispersal. The pH value of the electroplating solution is in the range of 2-10.

Abstract: A thin film solar cell including a Group IBIIIAVIA absorber layer on a defect free base including a stainless steel substrate is provided. The stainless steel substrate of the base is surface treated to remove the surface roughness such as protrusions that cause shunts. Before removing the protrusions, a thin protective ruthenium film is first deposited on the recessed surface portions of the substrate to protect these portions during the following protrusion removal. The protrusions on the surface receives very little or no ruthenium during the deposition. After the ruthenium film is formed, the protrusions are etched and removed by an etchant which only attacks the stainless steel but neutral to the ruthenium film. A contact layer is formed over the ruthenium layer and the exposed portions of the substrate to complete the base.

Abstract: Indium (In) electroplating solutions which are used to deposit compositionally pure, uniform, substantially defect free and smooth In films with near 100% plating efficiency and repeatability. In one embodiment the plating solution includes an In source, citric acid and its conjugate pair salt and a solvent. At a pH value of below 4.0, sub-micron thick In layers with close to 100% purity at close to 100% plating efficiency are produced. Such In layers are used in fabrication of electronic devices such as thin film solar cells.

Abstract: The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

Abstract: The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

Abstract: A method of forming a doped Group IBIIIAVIA absorber layer for solar cells by reacting a a metallic precursor layer with a dopant structure. The metallic precursor layer including Group IB and Group IIIA materials such as Cu, Ga and In are deposited on a base. The dopant structure is formed on the metallic precursor layer, wherein the dopant structure includes a stack of one or more Group VIA material layers such as Se layers and one or more a dopant material layers such as Na.

Abstract: A multi step process, which forms a Group VIA material layer, such as a selenium (Se) layer, having a thickness greater than 500 nanometers. The process includes electroplating a Se material layer, which has an amorphous micro-structure and which exhibits high electrical resistivity, on a workpiece and subsequently annealing the Se layer. Annealing process transforms the amorphous structure of the Se layer into a crystalline structure which is conductive. After the annealing, another Se layer can be electroplated onto the annealed Se layer. The electroplating and annealing steps can be repeated until the desired Se layer thickness is reached.

Abstract: The present invention relates to gallium (Ga) electroplating methods and chemistries to deposit uniform, defect free and smooth Ga films with high plating efficiency and repeatability. Such layers may be used in fabrication of electronic devices such as thin film solar cells. In one embodiment, the present invention provides a solution for application on a conductor that includes a Ga salt, a complexing agent, a solvent, and a Ga-film having submicron thickness is facilitated upon electrodeposition of the solution on the conductor. The solution may further include one or both of a Cu salt and an In salt.

Abstract: A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than 10 micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.

Abstract: The present invention relates to a method and apparatus for treating materials such as copper or copper based metal alloys, used in fabricating semiconductor devices with an ozone solvent solution and avoiding damage to metals by corrosion. The invention is also applicable to treating of materials such as copper and copper based alloys for the purpose of forming a protective layer on the exposed metal surface for protection of those copper surfaces from damage or corrosion caused by subsequent exposure to other liquid, gas, or plasma environments. This can be achieved by properly selecting the composition of the ozone solvent solution and controlling the pH and ORP of the ozone-solvent solution while avoiding the use of certain chemical constituents in the ozone solvent solution.

Abstract: A method of electrochemically filling features on a wafer surface to form a substantially planar copper layer is provided. The features to be filled includes a first feature that is an unfilled feature with the smallest width and a second feature having the next larger width after the smallest feature. The first and the second features are less than 10 micrometers in width. The method comprises applying a first cathodic current to form a first copper layer on the wafer surface. The first copper layer has a planar portion over a first feature and a non-planar portion over a second feature. After a surface of the first copper layer is treated by applying a first pulsed current, a second cathodic current is applied to form a second copper layer on the first copper layer. The second copper layer has a planar portion over both the first and second features.

Abstract: A method for removing gas bubbles from a surface of a wafer is provided. Removal process is performed as the wafer surface is placed into a process solution for an electrochemical process. As the wafer surface is placed into the solution and moved towards a pressure barrier placed into the solution, a process solution flow between the wafer surface and the pressure barrier is induced to remove gas bubbles from the wafer surface.