Patents by Inventor Sergey Lopatin

Sergey Lopatin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8052885
    Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: November 8, 2011
    Assignee: KLA-Tencor Corporation
    Inventors: Mehran Naser-Ghodsi, Garrett Pickard, Rudy F. Garcia, Ming Lun Yu, Kenneth Krzeczowski, Matthew Lent, Sergey Lopatin, Chris Huang, Niles K. MacDonald
  • Patent number: 7945086
    Abstract: A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: May 17, 2011
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Yehiel Gotkis, Sergey Lopatin, Mehran Nasser-Ghodsi
  • Publication number: 20110031113
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
    Type: Application
    Filed: October 15, 2010
    Publication date: February 10, 2011
    Inventors: Sergey Lopatin, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
  • Patent number: 7879730
    Abstract: Etch selectivity enhancement during electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Selectivity of etching of the target due to interaction between the electron beam and gas composition may be enhanced in a number of ways.
    Type: Grant
    Filed: January 12, 2007
    Date of Patent: February 1, 2011
    Assignee: KLA-Tencor Technologies Corporation
    Inventors: Mehran Naser-Ghodsi, Garrett Pickard, Rudy F. Garcia, Tzu-Chin Chuang, Ming Lun Yu, Kenneth Krzeczowski, Matthew Lent, Sergey Lopatin, Chris Huang, Niles K. MacDonald
  • Patent number: 7799182
    Abstract: Embodiments of the invention contemplate the formation of a low cost flexible solar cell using a novel electroplating method and apparatus to form a metal contact structure. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. Solar cell substrates that may benefit from the invention include flexible substrates may have an active region that contains organic material, single crystal silicon, multi-crystalline silicon, polycrystalline silicon, germanium, and gallium arsenide, cadmium telluride, cadmium sulfide, copper indium gallium selenide, copper indium selenide, gallilium indium phosphide, as well as heterojunction cells that are used to convert sunlight to electrical power.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: September 21, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sergey Lopatin, David Eaglesham, Charles Gay
  • Patent number: 7736928
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using an electrochemical plating process. The apparatus and methods described herein remove the need to perform the often costly processing steps of performing a mask preparation and formation steps, such as screen printing, lithographic steps and inkjet printing steps, to form a contact structure. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: June 15, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sergey Lopatin, John O. Dukovic, David Eaglesham, Nicolay Y. Kovarsky, Robert Bachrach, John Busch, Charles Gay
  • Patent number: 7704352
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
    Type: Grant
    Filed: December 1, 2006
    Date of Patent: April 27, 2010
    Assignee: Applied Materials, Inc.
    Inventors: Sergey Lopatin, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
  • Patent number: 7534298
    Abstract: An apparatus and a method of controlling an electroless deposition process by directing electromagnetic radiation towards the surface of a substrate and detecting the change in intensity of the electromagnetic radiation at one or more wavelengths reflected off features on the surface of the substrate. In one embodiment the detected end of an electroless deposition process step is measured while the substrate is moved relative to the detection mechanism. In another embodiment multiple detection points are used to monitor the state of the deposition process across the surface of the substrate. In one embodiment the detection mechanism is immersed in the electroless deposition fluid on the substrate. In one embodiment a controller is used to monitor, store, and/or control the electroless deposition process by use of stored process values, comparison of data collected at different times, and various calculated time dependent data.
    Type: Grant
    Filed: September 17, 2004
    Date of Patent: May 19, 2009
    Assignee: Applied Materials, Inc.
    Inventors: Arulkumar Shanmugasundram, Manoocher Birang, Ian A. Pancham, Sergey Lopatin
  • Publication number: 20090010526
    Abstract: A first embodiment of the invention relates to a method for evaluating the quality of structures on an integrated circuit wafer. Test structures formed on either on the integrated or on a test wafer are exposed to an electron beam and an electron-beam activated chemical etch. The electron-beam activated etching gas or vapor etches the test structures, which are analyzed after etching to determine a measure of quality of the test structures. The measure of quality may be used in a statistical process control to adjust the parameters used to form device structures on the integrated circuit wafer. The test structures are formed on an integrated circuit wafer having two or more die. Each die has one or more integrated circuit structures. The test structures are formed on scribe lines between two or more adjacent die. Each test structure may correspond in dimensions and/or composition to one or more of the integrated circuit structures.
    Type: Application
    Filed: January 12, 2007
    Publication date: January 8, 2009
    Applicant: KLA Tencor Technologies Corporation
    Inventors: Yehiel Gotkis, Sergey Lopatin, Mehran Nasser-Ghodsi
  • Publication number: 20080128268
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
    Type: Application
    Filed: December 1, 2006
    Publication date: June 5, 2008
    Inventors: Sergey Lopatin, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
  • Publication number: 20080132082
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel electroplating apparatus and method to form a metal contact structure having metal lines formed using an electrochemical plating process. The apparatus and methods described herein remove the need to perform the often costly processing steps of performing a mask preparation and formation steps, such as screen printing, lithographic steps and inkjet printing steps, to form a contact structure. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
    Type: Application
    Filed: December 1, 2006
    Publication date: June 5, 2008
    Inventors: Sergey Lopatin, John O. Dukovic, David Eaglesham, Nicolay Y. Kovarsky, Robert Bachrach, John Busch, Charles Gay
  • Publication number: 20080128019
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell using a novel high speed electroplating method and apparatus to form a metal contact structure having selectively formed metal lines using an electrochemical plating process. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connection that is reliable and cost effective. Therefore, one or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing a common metal, such as copper.
    Type: Application
    Filed: December 1, 2006
    Publication date: June 5, 2008
    Inventors: Sergey LOPATIN, Nicolay Y. Kovarsky, David Eaglesham, John O. Dukovic, Charles Gay
  • Publication number: 20080128013
    Abstract: Embodiments of the invention contemplate the formation of a low cost flexible solar cell using a novel electroplating method and apparatus to form a metal contact structure. The apparatus and methods described herein remove the need to perform one or more high temperature screen printing processes to form conductive features on the surface of a solar cell substrate. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. Solar cell substrates that may benefit from the invention include flexible substrates may have an active region that contains organic material, single crystal silicon, multi-crystalline silicon, polycrystalline silicon, germanium, and gallium arsenide, cadmium telluride, cadmium sulfide, copper indium gallium selenide, copper indium selenide, gallilium indium phosphide, as well as heterojunction cells that are used to convert sunlight to electrical power.
    Type: Application
    Filed: December 1, 2006
    Publication date: June 5, 2008
    Inventors: Sergey Lopatin, David Eaglesham, Charles Gay
  • Publication number: 20080121276
    Abstract: A metal contact structure of a solar cell substrate includes a contact with a conductive layer or a capping layer that is formed using an electroless plating process. The contact may be disposed within a hole formed through the solar cell substrate or on a non-light-receiving surface of the solar cell substrate. The electroless plating process for the conductive layer uses a seed layer that includes an activation layer for electroless plating.
    Type: Application
    Filed: November 29, 2006
    Publication date: May 29, 2008
    Inventors: Sergey Lopatin, Arulkumar Shanmugasundram, Robert Z. Bachrach, Charles Gay, David Eaglesham
  • Publication number: 20080092947
    Abstract: Embodiments of the invention contemplate the formation of a low cost solar cell metal contact structure that has improved electrical and mechanical properties through the use of an electrochemical plating process. The resistance of interconnects formed in a solar cell device greatly affects the efficiency of the solar cell. It is thus desirable to form a solar cell device that has a low resistance connections that is reliable and cost effective. One or more embodiments of the invention described herein are adapted to form a low cost and reliable interconnecting layer using an electrochemical plating process containing common metal, such as copper. However, generally the electroplated portions of the interconnecting layer may contain a substantially pure metal or a metal alloy layer. Methods are discussed herein that are used to form a solar cell containing conductive metal interconnect layer(s) that have a low intrinsic stress.
    Type: Application
    Filed: October 24, 2006
    Publication date: April 24, 2008
    Inventors: Sergey Lopatin, Charles Gay, David Eaglesham, John O. Dukovic, Nicolay Y. Kovarsky
  • Patent number: 7341633
    Abstract: Embodiments of the invention generally provide a fluid processing platform. The platform includes a mainframe having a substrate transfer robot, at least one substrate cleaning cell on the mainframe, and at least one processing enclosure. The processing enclosure includes a gas supply positioned in fluid communication with an interior of the processing enclosure, a first fluid processing cell positioned in the enclosure, a first substrate head assembly positioned to support a substrate for processing in the first fluid processing cell, a second fluid processing cell positioned in the enclosure, a second head assembly positioned to support a substrate for processing in the second fluid processing cell, and a substrate shuttle positioned between the first and second fluid processing cells and being configured to transfer substrates between the fluid processing cells and the mainframe robot.
    Type: Grant
    Filed: October 14, 2004
    Date of Patent: March 11, 2008
    Assignee: Applied Materials, Inc.
    Inventors: Dmitry Lubomirsky, Arulkumar Shanmugasundram, Ian A. Pancham, Sergey Lopatin
  • Publication number: 20070284746
    Abstract: An integrated circuit is provided including an integrated circuit having a trench and via provided in a dielectric layer. A nano-electrode-array is over the dielectric layer in the trench and via, and a conductor is over the nano-electrode-array. The conductor and the nano-electrode-array are coplanar with a surface of the dielectric layer.
    Type: Application
    Filed: April 30, 2007
    Publication date: December 13, 2007
    Applicant: KLA-TENCOR TECHNOLOGIES CORPORATION
    Inventors: Sergey Lopatin, Robert Fiordalice, Faivel Pintchovski, Igor Ivanov, Wen Kong, Artur Kolics
  • Patent number: 7273813
    Abstract: A method and cleaning solution that removes contaminants from a dielectric material and polished surfaces of copper interconnect structures prior to an electroless deposition of a capping layer without substantially adversely affecting the interconnect formed therefrom are disclosed. The cleaning solution includes combinations of a core mixture and sulfuric acid or sulfonic compounds such as sulfonic acids that include methanesulfonic acid. In one embodiment, the core mixture includes a citric acid solution and a pH adjuster such as tetra-methyl ammonium hydroxide or ammonia. One embodiment of the method includes providing a planarized substrate, applying the cleaning solution to the substrate to simultaneously clean at least one metal feature and a dielectric material of the substrate, and depositing the metal capping layer selectively on the at least one metal feature using electroless deposition.
    Type: Grant
    Filed: February 8, 2005
    Date of Patent: September 25, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Ramin Emami, Timothy Weidman, Sergey Lopatin, Hongbin Fang, Arulkumar Shanmugasundram
  • Patent number: 7256111
    Abstract: Embodiments of the present invention relate to an apparatus and method of annealing substrates in a thermal anneal chamber and/or a plasma anneal chamber before electroless deposition thereover. In one embodiment, annealing in a thermal anneal chamber includes heating the substrate in a vacuum environment while providing a gas, such as noble gases, hydrogen gas, other reducing gases, nitrogen gas, other non-reactive gases, and combinations thereof. In another embodiment, annealing in a plasma chamber comprises plasma annealing the substrate in a plasma, such as a plasma from an argon gas, helium gas, hydrogen gas, and combinations thereof.
    Type: Grant
    Filed: September 3, 2004
    Date of Patent: August 14, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Sergey Lopatin, Arulkumar Shanmugasundram, Ramin Emami, Hongbin Fang
  • Publication number: 20070158303
    Abstract: Structural modification using electron beam activated chemical etch (EBACE) is disclosed. A target or portion thereof may be exposed to a gas composition of a type that etches the target when the gas composition and/or target are exposed to an electron beam. By directing an electron beam toward the target in the vicinity of the gas composition, an interaction between the electron beam and the gas composition etches a portion of the target exposed to both the gas composition and the electron beam. Structural modifications of the target may be conducted by means of etching due to interaction between the electron beam and gas composition.
    Type: Application
    Filed: January 12, 2007
    Publication date: July 12, 2007
    Applicant: KLA-Tencor Technologies Corporation
    Inventors: MEHRAN NASSER-GHODSI, Garrett Pickard, Rudy Garcia, Ming Yu, Kenneth Krzeczowski, Matthew Lent, Sergey Lopatin, Chris Huang, Niles MacDonald