Patents by Inventor Seshadri Ganguli

Seshadri Ganguli has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9230835
    Abstract: Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).
    Type: Grant
    Filed: March 14, 2014
    Date of Patent: January 5, 2016
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Avgerinos V. Gelatos, Srinivas Gandikota, Seshadri Ganguli, Xinyu Fu, Bo Zheng, Yu Lei
  • Patent number: 9209074
    Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
    Type: Grant
    Filed: May 20, 2015
    Date of Patent: December 8, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jiang Lu, Hyoung-Chan Ha, Paul F. Ma, Seshadri Ganguli, Joseph F. Aubuchon, Sang-ho Yu, Murali K. Narasimhan
  • Patent number: 9202674
    Abstract: A bridge assembly includes an electrically insulating hollow tube or bridge having a pair of ends, the bridge being supported at one of the ends over the cylindrical side wall and being supported at the other of the ends over the electrode. The bridge assembly further includes a set of conductive rings surrounding the hollow tube and spaced from one another along the length of the bridge, and plural electrically resistive elements. Each of the resistive elements has a pair of flexible connectors, respective ones the resistive elements connected at their flexible connectors between respective pairs of the rings to form a series resistor assembly.
    Type: Grant
    Filed: October 21, 2008
    Date of Patent: December 1, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Olkan Cuvalci, Yu Chang, William Kuang, Anqing Cui, Seshadri Ganguli
  • Publication number: 20150325446
    Abstract: Embodiments of the invention provide processes to selectively form a cobalt layer on a copper surface over exposed dielectric surfaces. In one embodiment, a method for capping a copper surface on a substrate is provided which includes positioning a substrate within a processing chamber, wherein the substrate contains a contaminated copper surface and a dielectric surface, exposing the contaminated copper surface to a reducing agent while forming a copper surface during a pre-treatment process, exposing the substrate to a cobalt precursor gas to selectively form a cobalt capping layer over the copper surface while leaving exposed the dielectric surface during a vapor deposition process, and depositing a dielectric barrier layer over the cobalt capping layer and the dielectric surface.
    Type: Application
    Filed: April 9, 2015
    Publication date: November 12, 2015
    Inventors: Sang-Ho YU, Kevin MORAES, Seshadri GANGULI, Hua CHUNG, See-Eng PHAN
  • Patent number: 9145612
    Abstract: Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl4, TaCl5 and HfCl4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy)3-aAlHa]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
    Type: Grant
    Filed: June 28, 2013
    Date of Patent: September 29, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Srinivas Gandikota, Xinliang Lu, Shih Chung Chen, Wei Tang, Jing Zhou, Seshadri Ganguli, David Thompson, Jeffrey W. Anthis, Atif Noori, Faruk Gungor, Dien-Yeh Wu, Mei Chang, Xinyu Fu, Yu Lei
  • Publication number: 20150262828
    Abstract: Methods for forming a multi-threshold voltage device on a substrate are provided herein. In some embodiments, the method of forming a multi-threshold voltage device may include (a) providing a substrate having a first layer disposed thereon, wherein the substrate comprises a first feature and a second feature disposed within the first layer; (b) depositing a blocking layer atop the substrate; (c) selectively removing a portion of the blocking layer from atop the substrate to expose the first feature; (d) selectively depositing a first work function layer atop the first feature; (e) removing a remainder of the blocking layer to expose the second feature; and (f) depositing a second work function layer atop the atop the first work function layer and the second feature.
    Type: Application
    Filed: February 20, 2015
    Publication date: September 17, 2015
    Inventors: ADAM BRAND, NAOMI YOSHIDA, SESHADRI GANGULI, DAVID THOMPSON, MEI CHANG
  • Publication number: 20150255333
    Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
    Type: Application
    Filed: May 20, 2015
    Publication date: September 10, 2015
    Inventors: Jiang LU, Hyoung-Chan HA, Paul F. MA, Seshadri GANGULI, Joseph F. AUBUCHON, Sang-ho YU, Murali K. NARASIMHAN
  • Patent number: 9129945
    Abstract: The invention provides a method of forming a film stack on a substrate, comprising depositing a tungsten nitride layer on the substrate, subjecting the substrate to a nitridation treatment using active nitrogen species from a remote plasma, and depositing a conductive bulk layer directly on the tungsten nitride layer without depositing a tungsten nucleation layer on the tungsten nitride layer as a growth site for tungsten.
    Type: Grant
    Filed: March 24, 2010
    Date of Patent: September 8, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Sang-Hyeob Lee, Sang Ho Yu, Wei Ti Lee, Seshadri Ganguli, Hyoung-Chan Ha, Hoon Kim
  • Publication number: 20150194298
    Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.
    Type: Application
    Filed: December 31, 2014
    Publication date: July 9, 2015
    Inventors: Yu Lei, Srinivas Gandikota, Seshadri Ganguli, Bo Zheng, Rajkumar Jakkaraju, Martin Jeff Salinas, Benjamin Schmiege
  • Patent number: 9051641
    Abstract: Embodiments of the invention provide processes for depositing a cobalt layer on a barrier layer and subsequently depositing a conductive material, such as copper or a copper alloy, thereon. In one embodiment, a method for depositing materials on a substrate surface is provided which includes forming a barrier layer on a substrate, exposing the substrate to dicobalt hexacarbonyl butylacetylene (CCTBA) and hydrogen to form a cobalt layer on the barrier layer during a vapor deposition process (e.g., CVD or ALD), and depositing a conductive material over the cobalt layer. In some examples, the barrier layer and/or the cobalt layer may be exposed to a gas or a reagent during a treatment process, such as a thermal process, an in situ plasma process, or a remote plasma process.
    Type: Grant
    Filed: August 29, 2008
    Date of Patent: June 9, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jiang Lu, Hyoung-Chan Ha, Paul Ma, Seshadri Ganguli, Joseph F. Aubuchon, Sang Ho Yu, Murali K. Narasimhan
  • Patent number: 9048183
    Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
    Type: Grant
    Filed: January 3, 2014
    Date of Patent: June 2, 2015
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Seshadri Ganguli, Srinivas Gandikota, Yu Lei, Xinliang Lu, Sang Ho Yu, Hoon Kim, Paul F. Ma, Mei Chang, Maitreyee Mahajani, Patricia M. Liu
  • Patent number: 9032906
    Abstract: Embodiments of the invention provide an apparatus configured to form a material during an atomic layer deposition (ALD) process, such as a plasma-enhanced ALD (PE-ALD) process. In one embodiment, a plasma baffle assembly for receiving a process gas within a plasma-enhanced vapor deposition chamber is provided which includes a plasma baffle plate containing an upper surface to receive a process gas and a lower surface to emit the process gas, a plurality of openings configured to flow the process gas from above the upper surface to below the lower surface, wherein each opening is positioned at a predetermined angle of a vertical axis that is perpendicular to the lower surface, and a conical nose cone on the upper surface. In one example, the openings are slots positioned at a predetermined angle to emit the process gas with a circular flow pattern.
    Type: Grant
    Filed: October 16, 2007
    Date of Patent: May 19, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Paul Ma, Kavita Shah, Dien-Yeh Wu, Seshadri Ganguli, Christophe Marcadal, Frederick C. Wu, Schubert S. Chu
  • Publication number: 20150086722
    Abstract: Embodiments described herein relate to a thermal chlorine gas cleaning process. In one embodiment, a method for cleaning N-Metal film deposition in a processing chamber includes positioning a dummy substrate on a substrate support. The processing chamber is heated to at least about 50 degrees Celsius. The method further includes flowing chlorine gas into the processing chamber and evacuating chlorine gas from the processing chamber. In another embodiment, a method for cleaning titanium aluminide film deposition in a processing chamber includes heating the processing chamber to a temperature between about 70 about degrees Celsius and about 100 degrees Celsius, wherein the processing chamber and the substrate support include one or more fluid channels configured to heat or cool the processing chamber and the substrate support.
    Type: Application
    Filed: September 12, 2014
    Publication date: March 26, 2015
    Applicant: Applied Materials, Inc.
    Inventors: Srinivas GANDIKOTA, Xinliang LU, Kyoung-Ho BU, Jing ZHOU, Seshadri GANGULI, David THOMPSON
  • Patent number: 8987080
    Abstract: Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
    Type: Grant
    Filed: April 18, 2013
    Date of Patent: March 24, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Xinliang Lu, Seshadri Ganguli, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Yu Lei, Xinyu Fu, Wei Tang, Srinivas Gandikota
  • Patent number: 8951478
    Abstract: Embodiments of the invention provide an apparatus and a process for generating a chemical precursor used in a vapor deposition processing system. The apparatus includes a canister (e.g., ampoule) having a sidewall, a top, and a bottom encompassing an interior volume therein, inlet and outlet ports in fluid communication with the interior volume, and a thermally conductive coating disposed on or over the outside surface of the canister. The thermally conductive coating is more thermally conductive than the outside surface of the canister. The thermally conductive coating may contain aluminum, aluminum nitride, copper, brass, silver, titanium, silicon nitride, or alloys thereof. In some embodiments, an adhesion layer (e.g., titanium or tantalum) may be disposed between the outside surface of the canister and the thermally conductive coating. In other embodiments, the canister may contain a plurality of baffles or solid heat-transfer particles to help evenly heat a solid precursor therein.
    Type: Grant
    Filed: December 19, 2007
    Date of Patent: February 10, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Schubert S. Chu, Christophe Marcadal, Seshadri Ganguli, Norman M. Nakashima, Dien-Yeh Wu
  • Patent number: 8927059
    Abstract: Methods of depositing pure metal and aluminum alloy metal films. Certain methods comprises contacting a substrate surface with first and second precursors, the first precursor comprising an aluminum precursor selected from dimethylaluminum hydride, alane coordinated to an amine, and a compound having a structure represented by: wherein R is a C1-C6 alkyl group, and the second precursor comprising a metal halide. Other methods relate to sequentially exposing a substrate to a first and second precursor, the first precursor comprising an aluminum precursor as described above, and the second precursor comprising Ti(NR?2)4 or Ta(NR?2)5, wherein R? is an alkyl, alkenyl, alkynyl, keto or aldehyde group.
    Type: Grant
    Filed: November 6, 2012
    Date of Patent: January 6, 2015
    Assignee: Applied Materials, Inc.
    Inventors: Xinliang Lu, David Thompson, Jeffrey W. Anthis, Mei Chang, Seshadri Ganguli, Wei Tang, Srinivas Gandikota, Atif Noori
  • Patent number: 8895443
    Abstract: Provided are methods of depositing N-Metals onto a substrate. Some methods comprise providing an initiation layer of TaM or TiM layer on a substrate, wherein M is selected from aluminum, carbon, noble metals, gallium, silicon, germanium and combinations thereof; and exposing the substrate having the TaM or TiM layer to a treatment process comprising soaking the surface of the substrate with a reducing agent to provided a treated initiation layer.
    Type: Grant
    Filed: June 18, 2012
    Date of Patent: November 25, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Xinliang Lu, Atif Noori, Maitreyee Mahajani, Shih Chung Chen, Mei Chang
  • Publication number: 20140273515
    Abstract: Embodiments of an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices are provided herein. In some embodiments, an integrated platform for fabricating n-type metal oxide semiconductor (NMOS) devices may include a first deposition chamber configured to deposit a first layer atop the substrate, the first layer comprising titanium oxide (TiO2) or selenium (Se); a second deposition chamber configured to deposit a second layer atop the first layer, the second layer comprising titanium; a third deposition chamber configured to deposit a third layer atop the second layer, the third layer comprising one of titanium nitride (TiN) or tungsten nitride (WN).
    Type: Application
    Filed: March 14, 2014
    Publication date: September 18, 2014
    Applicant: Applied Materials, Inc.
    Inventors: AVGERINOS V. GELATOS, SRINIVAS GANDIKOTA, SESHADRI GANGULI, XINYU FU, BO ZHENG, YU LEI
  • Patent number: 8815724
    Abstract: Embodiments of the invention described herein generally provide methods and apparatuses for forming cobalt silicide layers, metallic cobalt layers, and other cobalt-containing materials. In one embodiment, a method for forming a cobalt silicide containing material on a substrate is provided which includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, depositing a metallic cobalt material on the cobalt silicide material, and depositing a metallic contact material on the substrate. In another embodiment, a method includes exposing a substrate to at least one preclean process to expose a silicon-containing surface, depositing a cobalt silicide material on the silicon-containing surface, expose the substrate to an annealing process, depositing a barrier material on the cobalt silicide material, and depositing a metallic contact material on the barrier material.
    Type: Grant
    Filed: April 20, 2012
    Date of Patent: August 26, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Seshadri Ganguli, Schubert S. Chu, Mei Chang, Sang-ho Yu, Kevin Moraes, See-Eng Phan
  • Patent number: 8765601
    Abstract: Embodiments of the invention provide methods for forming materials on a substrate used for metal gate and other applications. In one embodiment, a method includes forming a cobalt stack over a barrier layer disposed on a substrate by depositing a cobalt layer during a deposition process, exposing the cobalt layer to a plasma to form a plasma-treated cobalt layer during a plasma process, and repeating the cobalt deposition process and the plasma process to form the cobalt stack containing a plurality of plasma-treated cobalt layers. The method further includes exposing the cobalt stack to an oxygen source gas to form a cobalt oxide layer from an upper portion of the cobalt stack during a surface oxidation process and heating the remaining portion of the cobalt stack to a temperature within a range from about 300° C. to about 500° C. to form a crystalline cobalt film during a thermal annealing crystallization process.
    Type: Grant
    Filed: August 1, 2013
    Date of Patent: July 1, 2014
    Assignee: Applied Materials, Inc.
    Inventors: Yu Lei, Xinyu Fu, Anantha Subramani, Seshadri Ganguli, Srinivas Gandikota