Publication number: 20140120712
Abstract: Embodiments provide methods for depositing metal-containing materials. The methods include deposition processes that form metal, metal carbide, metal silicide, metal nitride, and metal carbide derivatives by a vapor deposition process, including thermal decomposition, CVD, pulsed-CVD, or ALD. A method for processing a substrate is provided which includes depositing a dielectric material forming a feature definition in the dielectric material, depositing a work function material conformally on the sidewalls and bottom of the feature definition, and depositing a metal gate fill material on the work function material to fill the feature definition, wherein the work function material is deposited by reacting at least one metal-halide precursor having the formula MXY, wherein M is tantalum, hafnium, titanium, and lanthanum, X is a halide selected from the group of fluorine, chlorine, bromine, or iodine, and y is from 3 to 5.
Type:
Application
Filed:
January 3, 2014
Publication date:
May 1, 2014
Applicant:
APPLIED MATERIALS, INC.
Inventors:
Seshadri GANGULI, Srinivas GANDIKOTA, Yu LEI, Xinliang LU, Sang Ho YU, Hoon KIM, Paul F. MA, Mei CHANG, Maitreyee MAHAJANI, Patricia M. LIU