Abstract: A multimedia reproduction apparatus in a mobile communication terminal comprising: a data parsing section for dividing multimedia data into video data and other data and then parsing the video data and the other data; a video data processing section for decoding the parsed video data; a media delay output controller for delaying the other data parsed by and transmitted from the data parsing section according to buffering information of the video data processing section, for outputting the delayed data, and for generating a synchronizing signal; an audio data processing section for decoding and outputting audio data from among the other data output from the media delay output controller; a video data output section for reading and outputting the video data; and a synchronizing section for synchronizing and outputting the video data.

Abstract: An adaptive two-dimensional fast DCT (Discrete Cosine Transform) encoding method capable of encoding an image in a mobile communication terminal, reducing an amount of operations, and reducing power consumption adaptively using a fast DCT method. In a first step, a smoothness (N) of a block image to be processed is determined. Then fast DCT encoding in a row direction for the block image performed and operation values not exceeding the smoothness (N) are output. Next, fast DCT encoding in a column direction for the block image is performed by using result values obtained from the fast DCT encoding operation in the row direction and only operation values not exceeding the smoothness (N) are output.

Abstract: The present invention relates to a method of forming a tunnel oxide film in a semiconductor device, in which a predetermined thickness of the oxide film is not removed during a process of removing the oxide film in a memory cell area and a low voltage transistor area after a gate oxide film for a high voltage transistor is formed, thereby preventing increase of surface roughness on a substrate and contamination caused by absorbed carbon components which are generated when the oxide film and the photo resist film are removed. Therefore, it is possible to form a tunnel oxide film having an excellent film quality.

Abstract: An MPEG-4 encoder utilizing an H.263 multimedia chip. The MPEG-4 encoder includes a DC (Direct Current) predictor for predicting a DC component of the image frame encoded by an H.263 standard upon receiving a prescribed MPEG-4 quantization value, and an MPEG-4 reconstruction image memory for converting the H.263 reconstruction image into an MPEG-4 reconstruction image, and storing the MPEG-4 reconstruction image. The MPEG-4 encoder removes spatial redundancy from source image data entered in frame units using a prescribed H.263 quantization value, predicts a DC component of an image frame having no spatial redundancy using a prescribed MPEG-4 quantization value, performs a VLC (Variable Length Coding) process on the image frame using the predicted DC component, and outputs the VLC-processed image frame in the form of an MPEG-4 bit stream.

Abstract: The present invention relates to a method of forming a tunnel oxide film in a semiconductor device, in which a predetermined thickness of the oxide film is not removed during a process of removing the oxide film in a memory cell area and a low voltage transistor area after a gate oxide film for a high voltage transistor is formed, thereby preventing increase of surface roughness on a substrate and contamination caused by absorbed carbon components which are generated when the oxide film and the photo resist film are removed. Therefore, it is possible to form a tunnel oxide film having an excellent film quality.

Abstract: The present invention is provided to manufacture a dual gate oxide film. According to the present invention, it is possible to obtain a high-quality NO gate oxide film for high voltage and a high-quality NO gate oxide film for low voltage where nitrogen is distributed uniformly in the entire oxide films by carrying out a rapid annealing process in an inert atmosphere after carrying out an NO annealing process in order to prevent a phenomenon that nitrogen is not distributed uniformly and segregated in a gate oxide film for high voltage due to application of the NO annealing process after forming a gate oxide film for low voltage.

Abstract: Pixels in a YUV format including a Y component representing luminance and U and V components representing chrominance are converted into a RGB format including R, G, and B components respectively representing red, green, and blue colors in order to display images on a video display device such as a CRT (Cathode Ray Tube) or a LCD (Liquid Crystal Display). The present invention relates to an apparatus and a method for converting the pixels from the YUV format to the RGB format using color look-up tables with a small memory capacity. The R component is obtained from the first and second color look-up tables using the Y and V components as indexes, and the G component is obtained from the first, third, and fourth color look-up tables using the Y, U, and V components as indexes, and the B component is obtained from the first and fifth color look-up tables using the Y and U components as indexes.

Abstract: Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.

Abstract: A video encoder differentially encodes an image of a speaker during a visual call. The video encoder comprises a motion estimator for estimating motion of an individual from an input video signal, and calculating a motion vector of the individual; a speaker region detector for detecting a speaker region representing an contour of a speaker from the motion vector; a DCT section for calculating DCT coefficients by DCT-transforming a video signal outputted from the motion estimator; a face region detector for detecting a face region of the speaker from the speaker region based on the DCT coefficients, and generating a differential quantization table by distinguishing the detected face region from non-face regions; an adaptive bit rate controller for differential setting a quantization step size for quantization based on the speaker region; and a quantizer for quantizing the DCT coefficients according to the quantization step size and the differential quantization table.

Abstract: Disclosed is a method of manufacturing the semiconductor devices. The method comprising the steps of forming a gate electrode on a semiconductor substrate, depositing an oxide film for a spacer on the gate electrode, implementing an anisotropic dry etch process for the oxide film for the spacer to form spacers at the sidewalls of the gate electrode, and implementing a rapid thermal annealing process for the spacers under an oxygen atmosphere in order to segregate hydrogen contained within the spacers toward the surface. Therefore, hydrogen contained within the spacer oxide film is not diffused into the tunnel oxide film and the film quality of the tunnel oxide film is thus improved. As a result, program or erase operation characteristics of the flash memory device and a retention characteristic of the flash memory device could be improved.

Abstract: Disclosed is a method of manufacturing a semiconductor device. A gate is formed on a given region of a semiconductor substrate. Spacers are then formed using DCS-HTO or TEOS. Hydrogen remaining within the spacers is removed by a RTA process under nitrogen atmosphere and nitride films are formed on the spacers at the same time. In case of a flash memory device, a retention characteristic can be improved. A process of forming the nitride film additionally required in a subsequent contact hole formation process may be omitted. The sheet resistance of the gate could be improved by promoting growth of a crystal grain of a tungsten silicide film constituting a control gate.

Abstract: Disclosed is a method of forming a floating gate in a date flash memory device on which first and second polysilicon films are stacked. After the first polysilicon film is formed, a SiH4 gas is introduced to decompose SiH4 and SiO2 into Si and H2 and Si and O2. A N2 anneal process is then implemented so that the decomposed H2 gas and O2 gas react to a N2 gas and are then outgassed. Next, a SiH4 gas and a PH3 gas are introduced to form the second polysilicon film. A native oxide film within the interface of the first polysilicon film and the second polysilicon film is removed to improve characteristics of the data flash memory device.

Abstract: Adaptive DCT/IDCT apparatus based on energy and method for controlling the same. The adaptive DCT/IDCT apparatus relates to a coding unit of a MPEG4/H.263 video coder, and performs an image processing operation with a high image quality at a high speed by calculating energy values for respective blocks and a mean energy value of the whole image.

Abstract: A digital image scaling method suitable for an embedded system.

Abstract: Disclosed is a method for encoding a video signal through discrete cosine transform (DCT) and motion estimation (ME) and an apparatus therefor. The method for encoding the video signal simplifies the ME with reference to DCT coefficients. In a method for estimating motion in a video frame compression system using DCT, flatness degrees of the blocks is determined according to the number of DCT coefficients having a non-zero value among DCT coefficients transformed in units of blocks. A reference frame is formed by recovering video frame data from some or all of the DCT coefficients corresponding to the flatness degrees of the blocks. Precision of motion estimation (ME) for a current macro block (MB) of a current video frame is dynamically changed corresponding to the flatness degree of the reference frame.

Abstract: Pixels in a YUV format including a Y component representing luminance and U and V components representing chrominance are converted into a RGB format including R, G, and B components respectively representing red, green, and blue colors in order to display images on a video display device such as a CRT (Cathode Ray Tube) or a LCD (Liquid Crystal Display). The present invention relates to an apparatus and a method for converting the pixels from the YUV format to the RGB format using color look-up tables with a small memory capacity. The R component is obtained from the first and second color look-up tables using the Y and V components as indexes, and the G component is obtained from the first, third, and fourth color look-up tables using the Y, U, and V components as indexes, and the B component is obtained from the first and fifth color look-up tables using the Y and U components as indexes.

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.

Abstract: A method of manufacturing a flash memory cell in which an ion implantation process is performed before a cleaning process for etching a protrusion of a trench insulating film to a nipple shape. As a result, the etch rate at a portion except for portions in which a moat will occur along the trench insulating film is increased. Therefore, generation of the moat in the trench insulating film can be prevented and spacing of the floating gate can be optimized.

Abstract: A method for fabricating a flash memory device begins with forming in sequence a tunnel oxide layer, a floating gate, an oxide-nitride-oxide (ONO) layer, a control gate, and a hard mask nitride layer on a silicon substrate. The hard mask nitride layer, the control gate, the ONO layer, and the floating gate are then patterned in sequence. Next, a sealing nitride layer is formed on a lateral side of the patterned structure. Also, in order to form a spacer, a first insulating layer is deposited on an entire resultant structure and then selectively patterned. Thereafter, second, third and fourth insulating layers are formed in sequence on the entire resultant structure including the spacer, and a photo resist pattern is then formed on the fourth insulating layer to define a metal contact area.

Abstract: A method of manufacturing a flash memory cell in which an ion implantation process is performed before a cleaning process for etching a protrusion of a trench insulating film to a nipple shape. As a result, the etch rate at a portion except for portions in which a moat will occur along the trench insulating film is increased. Therefore, generation of the moat in the trench insulating film can be prevented and spacing of the floating gate can be optimized.