Abstract: A semiconductor device that includes a plurality of first conductive patterns stacked over a substrate, dummy patterns formed in the first conductive patterns, respectively, first barrier patterns each surrounding the respective first conductive patterns and partially interposed between the respective first conductive patterns and the respective dummy patterns, second barrier patterns each surrounding the respective first barrier patterns and the respective dummy patterns, a second conductive pattern located over or under the first conductive patterns, and a third barrier pattern surrounding the second conductive pattern, wherein the second conductive pattern has a greater thickness than the first conductive patterns.

Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.

Abstract: Disclosed is an antenna in which certain radiators are shared for multiple frequency bands. The antenna may include at least one first radiator for a first frequency band; one or more second radiator for a second frequency band; and a third radiator. Here, the third radiator may be used when realizing the first frequency band and may also be used when realizing the second frequency band.

Abstract: A broadband internal antenna using double electromagnetic coupling is disclosed. The disclosed antenna may include: a first conducting member electrically connected to a feeding point; a second conducting member placed at a designated distance from at least a portion of the first conducting member so as to allow a first electromagnetic coupling with at least a portion of the first conducting member, and remaining in a floating state without being coupled to a ground and the feeding point; a third conducting member placed at a designated distance from the second conducting member so as to allow a second electromagnetic coupling with the second conducting member, and electrically connected to the ground; and a fourth conducting member extending from the third conducting member, for radiating RF signals. The disclosed antenna has the advantage of providing broadband characteristics within a limited size.

Abstract: A feeding system for feeding power using slow wave structure is disclosed. The feeding system includes a first substrate, a first pattern disposed on the first substrate, being a conductor, a second substrate separated from the first substrate, and a second pattern configured to locate on the second substrate, being a conductor. Here, the first pattern and the second pattern are connected electrically, and at least one of the first pattern and the second pattern has a slow wave structure.

Abstract: According to various embodiments, a method for providing content in an electronic device includes: providing content through a display functionally connected to the electronic device; selecting at least one object included in the content based on a user input; and connecting an input comment to the at least one selected object when the comment corresponding to the at least one selected object is input. The method for providing content in an electronic device can be implemented through various embodiments of the present disclosure.

Abstract: Disclosed herein is a canal type earphone with a pressure equilibrium means, capable of eliminating a pressure difference between a user's external auditory meatus and an outside during wearing of the canal type earphone. A pressure equilibrium means includes a side air passage through which air within a tube or air within a speaker unit in the canal type earphone is discharged to a side surface of a gasket or a side surface of the speaker unit, and a rear air passage through which air in the side surface of the speaker unit is discharged to the rear of the speaker unit.

Abstract: A semiconductor device that includes a plurality of first conductive patterns stacked over a substrate, dummy patterns formed in the first conductive patterns, respectively, first barrier patterns each surrounding the respective first conductive patterns and partially interposed between the respective first conductive patterns and the respective dummy patterns, second barrier patterns each surrounding the respective first barrier patterns and the respective dummy patterns, a second conductive pattern located over or under the first conductive patterns, and a third barrier pattern surrounding the second conductive pattern, wherein the second conductive pattern has a greater thickness than the first conductive patterns.

Abstract: Disclosed is AA? graphite with a new stacking feature of graphene, and a fabrication method thereof. Graphene is stacked in the sequence of AA? where alternate graphene layers exhibiting the AA? stacking are translated by a half hexagon (1.23 ?). AA? graphite has an interplanar spacing of about 3.44 ? larger than that of the conventional AB stacked graphite (3.35 ?) that has been known as the only crystal of pure graphite. This may allow the AA? stacked graphite to have unique physical and chemical characteristics.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: A method for processing content in an electronic device and an electronic device for doing the same are provided. The method includes acquiring content including at least one character, and performing at least one of classifying the acquired content into at least one of a plurality of categories by analyzing the acquired content or generating vector images including a vector image corresponding to the at least one character based on the acquired content and displaying at least a part of the vector images on a display functionally connected to the electronic device.

Abstract: A semiconductor device that includes a plurality of first conductive patterns stacked over a substrate, dummy patterns formed in the first conductive patterns, respectively, first barrier patterns each surrounding the respective first conductive patterns and partially interposed between the respective first conductive patterns and the respective dummy patterns, second barrier patterns each surrounding the respective first barrier patterns and the respective dummy patterns, a second conductive pattern located over or under the first conductive patterns, and a third barrier pattern surrounding the second conductive pattern, wherein the second conductive pattern has a greater thickness than the first conductive patterns.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: A semiconductor device that includes a plurality of first conductive patterns stacked over a substrate, dummy patterns formed in the first conductive patterns, respectively, first barrier patterns each surrounding the respective first conductive patterns and partially interposed between the respective first conductive patterns and the respective dummy patterns, second barrier patterns each surrounding the respective first barrier patterns and the respective dummy patterns, a second conductive pattern located over or under the first conductive patterns, and a third barrier pattern surrounding the second conductive pattern, wherein the second conductive pattern has a greater thickness than the first conductive patterns.

Abstract: A method of manufacturing a semiconductor memory device comprises forming a plurality of gate lines on a semiconductor substrate, forming an insulating layer on the gate lines, and performing a cleaning process using a surfactant-free cleaning solution having a viscosity of lower than 2 cP and an acidity of lower than 3 pH to remove residue from the surface of the insulating layer.

Abstract: An electronic device and a method for controlling an object display are provided. The method of controlling an object display includes displaying at least one input object on a screen, creating and storing property information of the at least one displayed object, creating a preview window in a region of the screen so as to display the at least one object on the preview window, and controlling a display of the object by using the property information of the at least one selected object in correspondence to the at least one displayed object.

Abstract: A method of processing three-dimensional (3D) stereoscopic image data is provided that includes comparing the polarity of image data of a present frame with the polarity of image data of a previous frame. The image data of the present frame are compensated according to the result of the comparison. The image data of the present frame is compensated to generate first compensation data, when the polarity of the image data of the present frame is opposite to the polarity of the image data of the previous frame, with respect a reference voltage.

Abstract: Disclosed herein is a canal type earphone with a pressure equilibrium means, capable of eliminating a pressure difference between a user's external auditory meatus and an outside during wearing of the canal type earphone. A pressure equilibrium means includes a side air passage through which air within a tube or air within a speaker unit in the canal type earphone is discharged to a side surface of a gasket or a side surface of the speaker unit, and a rear air passage through which air in the side surface of the speaker unit is discharged to the rear of the speaker unit.

Abstract: A method of manufacturing a semiconductor device includes forming isolation layers in a first direction at trenches at isolation regions defined at a semiconductor substrate and forming gate lines in a second direction crossing the first direction over the isolation layers and active regions defined between the isolation layers, performing a dry-etch process to remove the isolation layers, and forming an insulating layer over the semiconductor substrate to form a first air gap extending in the first direction in the trenches and a second air gap extending in the second direction between the gate lines.

Abstract: Disclosed is an antenna in which certain radiators are shared for multiple frequency bands. The antenna may include at least one first radiator for a first frequency band; one or more second radiator for a second frequency band; and a third radiator. Here, the third radiator may be used when realizing the first frequency band and may also be used when realizing the second frequency band.