Abstract: An image encoding/decoding method and apparatus is provided. The image decoding method comprises determining at least one layer in an output layer set (OLS), and determining a number of sublayers for the at least one layer.

Abstract: An image encoding/decoding method and apparatus for signaling a high level syntax (HLS) and a method of transmitting a bitstream are provided. An image decoding method according to the present disclosure may include obtaining first information indicating whether to constrain luma mapping with chroma scaling (LMCS), obtaining second information indicating whether LMCS for a current video sequence is allowed, and reconstructing a current picture within the current video sequence based on the second information. A value of the second information may be determined based on a value of the first information.

Abstract: A semiconductor device includes a lower structure; a first region including a plurality of first conductive layers vertically stacked in a first direction over the lower structure; a second region including a plurality of second conductive layers stacked in the first direction, the second conductive layers having the same horizontal length; and a plurality of contact structures coupled to the second conductive layers, respectively, wherein each of the second conductive layers includes a first horizontal conductive line; a second horizontal conductive line; and a pad between the first horizontal conductive line and the second horizontal conductive line.

Abstract: An image encoding/decoding method and apparatus are provided. The image decoding method includes obtaining, from a bitstream, network abstraction layer (NAL) unit type information of at least one NAL unit including coded image data, determining at least one NAL unit type of one or more slices in the current picture based on the obtained NAL unit type information, and decoding the current picture based on the determined NAL unit type. The current picture is determined to be a random access skipped leading (RASL) picture, based on the determined NAL unit type including a RASL picture NAL unit type (RASL_NUT). When an intra random access point (IRAP) picture associated with the RASL picture is a first picture in decoding order, the RASL picture is decoded, based on the RASL picture including one or more slices having a random access decodable leading (RADL) picture NAL unit type (RADL_NUT).

Abstract: An image encoding/decoding method and apparatus are provided. An image decoding method includes obtaining inter prediction information of a current block and wraparound information from a bitstream, and generating a prediction block of the current block based on the inter prediction information and the wraparound information. The wraparound information may include a first flag specifying whether wraparound motion compensation is enabled for a current video sequence including the current block. The first flag may have a first value specifying that the wraparound motion compensation is disabled, based on that one or more subpicture, which is coded independently and has a width different from a width of a current picture, is present in the current video sequence.

Abstract: Provided are polarization-mode controlled nonreciprocal optical waveguide devices, which are used in optical isolator and optical circulator devices. These devices offer a solution to the issues associated with traditional planar optical waveguide-based optical isolators, which are specific to a single polarization mode and result in significant optical loss. The new devices implement polarization-insensitive operation with minimal optical loss. They feature a magneto-optic (MO) film clad on one side and utilize waveguide mode converters or polarization-mode converters to guide the input light signals' mode or polarization. This reduces optical loss as the light passes through the interface between the non-MO clad region and the MO clad region and maximizes the MO effect within the MO clad region by ensuring proper polarization mode.

Abstract: A phase-matched non-reciprocal polarization rotation optical waveguide device is designed for integrated optical isolator and optical circulator applications by eliminating the birefringent characteristics by optimizing the optical waveguide structures. The optimized optical waveguide device structure satisfies phase-matching conditions between two orthogonal polarization-mode beams during the propagation along the waveguide to have an efficient polarization rotation. Contrary to the conventional scheme having a drawback of long device length, the invented optical waveguide devices made of semiconductor or dielectric material provide the phase-matching condition with a continuous magneto-optic clad layer and thus allow a short device length suitable to integration with other waveguide devices.

Abstract: An image encoding/decoding method and apparatus for signaling a VPS and a recording medium storing a bitstream are provided. An image decoding method may comprise obtaining first information indicating whether each output layer set (OLS) specified by a video parameter set (VPS) includes only one layer, obtaining second information indicating the number of decoded picture buffer (DPB) parameter syntax structures in the VPS, based on the first information, obtaining the DPB parameter syntax structures in the VPS based on the second information, and managing a DPB based on the DPB parameter syntax structures.

Abstract: An image encoding/decoding method and apparatus are provided. An image decoding method according to the present disclosure is performed by an image decoding apparatus. The image decoding method comprises determining whether a video parameter set (VPS) referenced by a sequence parameter set (SPS) is present, deriving information on inter layer prediction, based on the determination as to whether the video parameter set referenced by the sequence parameter set is present, and reconstructing an image based on the information on inter layer prediction.

Abstract: An image encoding/decoding method and apparatus are provided. An image decoding method performed by an image decoding apparatus includes determining a splitting type of a current block, splitting the current block into a plurality of lower-layer blocks based on the splitting type, and decoding the lower-layer blocks. In this case, the current block may be a chroma block, and the determining the splitting type of the current block may be performed by disallowing a predetermined type, in which a width or height of the lower-layer blocks is a predetermined value, among a plurality of splitting types.

Abstract: An image encoding/decoding method and apparatus are provided. An image decoding method performed by an image decoding apparatus includes determining a splitting type of a current block, splitting the current block into a plurality of lower-layer blocks based on the splitting type, and decoding the lower-layer blocks. In this case, the current block may be a chroma block, and the determining the splitting type of the current block may be performed by disallowing a predetermined splitting type having a width or height of the lower-layer blocks being a predetermined value, among a plurality of splitting types.

Abstract: A semiconductor device includes a common conductive line extending in a first direction; a memory cell array including a plurality of horizontal layers stacked in the first direction while sharing the common conductive line; and a selector structure operatively coupled to the common conductive line, wherein the selector structure includes, a plurality of select transistors stacked in the first direction; and a selector commonly coupled to the select transistors.

Abstract: Disclosed herein are an image encoding and decoding method and apparatus for signaling information on the number of DPB parameters, and a recording medium storing a bitstream. An image decoding method may comprise obtaining first information indicating the number of decoded picture buffer (DPB) parameter syntax structures in a video parameter set (VPS), computing the number of DPB parameter syntax structures in the VPS based on the first information, obtaining the DPB parameter syntax structures in the VPS based on the number of DPB parameter syntax structures, and managing a DPB based on the DPB parameter syntax structures.

Abstract: A method for fabricating a semiconductor device includes forming a stack body including a plurality of recess target layers over a lower structure; forming sacrificial isolation openings in the stack body; forming sacrificial isolation layers in the sacrificial isolation openings; forming sacrificial vertical openings having bottom surfaces disposed at a lower level than bottom surfaces of the sacrificial isolation openings in the stack body between the sacrificial isolation layers; forming preliminary horizontal layers by recessing the recess target layers through the sacrificial vertical openings; forming sacrificial pillar structures that fill the sacrificial vertical openings; forming cell isolation openings by removing the sacrificial isolation layers; forming horizontal layers by trimming the preliminary horizontal layers through the cell isolation openings; and forming cell isolation layers that fill the cell isolation openings.

Abstract: A semiconductor device may include a bit line extending in a third direction, a plurality of active layers extending in a first direction and contacting the bit line, a plurality of word lines extending in a second direction and each disposed at an top surface or bottom surface of each of the plurality of active layers, a plurality of capacitors contacting the plurality of active layers, and a contact formed in at least one active layer disposed at the uppermost part of the bit line, among the plurality of active layers. The bit line and the contact may be electrically connected or separated by using, as a control line, a word line disposed in the top surface or bottom surface of the at least one active layer, among the plurality of word lines.

Abstract: The present invention relates to a compound represented by chemical formula I, a stereoisomer thereof, a pharmaceutically acceptable salt thereof, a hydrate or solvate thereof, and a pharmaceutical composition comprising same.

Abstract: A system utilizing a high throughput coding mode for CABAC in HEVC is described. The system may include an electronic device configured to obtain a block of data to be encoded using an arithmetic based encoder; to generate a sequence of syntax elements using the obtained block; to compare an Absolute-3 value of the sequence or a parameter associated with the Absolute-3 value to a preset value; and to convert the Absolute-3 value to a codeword using a first code or a second code that is different than the first code, according to a result of the comparison.

Abstract: A memory device includes: a first memory cell mat that includes first multi-layer level sub word lines positioned over a substrate; a second memory cell mat that is laterally spaced apart from the first memory cell mat and includes second multi-layer level sub word lines; a first sub word line driver circuit that is positioned underneath the first memory cell mat; and a second sub word line driver circuit that is positioned underneath the second memory cell mat, wherein the first sub word line driver circuit is positioned underneath ends of the first multi-layer level sub word lines, and the second sub word line driver circuit is positioned underneath ends of the second multi-layer level sub word lines.

Abstract: An image encoding/decoding method and apparatus are provided. An image decoding method according to the present disclosure is performed by an image decoding apparatus. The image decoding method may comprise deriving a prediction sample of a current block based on motion information of the current block, determining whether bi-directional optical flow (BDOF) applies to the current block, based on that the BDOF applies to the current block, deriving a gradient for a current subblock in the current block, deriving motion refinement (vx, vy) for the current subblock based on the gradient, deriving a BDOF offset based on the gradient and the motion refinement, and deriving a refined prediction sample for the current block based on the prediction sample of the current block and the BDOF offset.

Abstract: A method for fabricating a semiconductor device includes: forming preliminary horizontal layers vertically stacked over a lower structure in a first direction and extending horizontally in a second direction crossing the first direction; forming trimming target layers that surround each of the preliminary horizontal layers; forming horizontal layers by trimming the preliminary horizontal layers in a third direction crossing the second direction; forming trimmed target layers by trimming the trimming target layers in the third direction; and replacing the trimmed target layers with conductive layers.