Patents by Inventor Seung-jae Jung
Seung-jae Jung has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8329500Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.Type: GrantFiled: December 18, 2009Date of Patent: December 11, 2012Assignees: Samsung Display Co., Ltd., Samsung SDI Co., Ltd.Inventors: Byoung-Kyu Lee, Se-Jin Chung, Byoung-June Kim, Czang-Ho Lee, Myung-Hun Shin, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park, Mi-Hwa Lim, Joon-Young Seo
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Patent number: 8319513Abstract: An inspecting apparatus for a solar cell and an inspecting method are provided. The inspecting apparatus for the solar cell includes a head unit having a plurality of probe units, a rotation unit rotating the head unit according to an interval of cells of the solar cell, a controller controlling a rotation angle of the head unit by controlling the rotation unit, and a wire unit connected to the head unit to be electrically connected to the probe units.Type: GrantFiled: July 17, 2009Date of Patent: November 27, 2012Assignees: Samsung Electronics Co., Ltd., Samsung SDI Co., Ltd.Inventors: Myung-Hun Shin, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park
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Publication number: 20120280232Abstract: A photoelectric conversion device includes a first photoelectric conversion unit on a substrate and having a first energy bandgap, a second photoelectric conversion unit having a second energy bandgap that is different from the first energy bandgap, the second photoelectric conversion unit being on the first photoelectric conversion unit, and an intermediate unit between the first and second photoelectric conversion units, the intermediate unit including a stack of a first intermediate layer and a second intermediate layer, each of the first intermediate layer and the second intermediate layer having a refractive index that is smaller than that of the first photoelectric conversion unit, the first intermediate layer having a first refractive index, and the second intermediate layer having a second refractive index that is smaller than the first refractive index.Type: ApplicationFiled: March 5, 2012Publication date: November 8, 2012Inventors: Seung-Jae JUNG, Yuk-Hyun NAM, Ki-Won Jeon
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Patent number: 8293069Abstract: A inductively coupled plasma apparatus includes reaction chamber in which a substrate is loaded, and a double comb type antenna structure including first linear antennas and second linear antennas respectively arranged horizontally to pass through the reaction chamber inside the reaction chamber. The first and second linear antenna are alternately aligned each other. First ends the first linear antennas are protruded out of the reaction chamber and coupled to each other so as to be coupled to a first induced RF power, and first ends of the second linear antennas are protruded out of the reaction chamber in opposition to the first ends of the first linear antennas and coupled to each other so as to be coupled to a second induced RF power. Plasma uniformity is improved and superior plasma uniformity is maintained by adjusting a distance between antennas according to a size of the substrate.Type: GrantFiled: December 10, 2008Date of Patent: October 23, 2012Assignee: Sungkyunkwan UniversityInventors: Geun-Young Yeom, Kyong-Nam Kim, Seung-Jae Jung
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Patent number: 8294021Abstract: A photovoltaic device and a manufacturing method thereof are provided. The photovoltaic device includes: a substrate; a first conductive layer formed on the substrate; P layers and N layers alternately formed along a first direction on the first conductive layer; and I layers covering the P layers and the N layers on the first conductive layer, wherein the P layers and the N layers are separated from each other by a first interval, the I layers are formed between the P layers and the N layers that are separated by the first interval, and the P layers, the I layers, and the N layers formed along the first direction form unit cells.Type: GrantFiled: June 17, 2009Date of Patent: October 23, 2012Assignees: Samsung Electronics Co., Ltd., Samsung SDI Co., Ltd.Inventors: Min Park, Min-Seok Oh, Jung-Tae Kim, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20120129295Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: ApplicationFiled: January 27, 2012Publication date: May 24, 2012Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Min-Seok OH, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim
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Publication number: 20120118365Abstract: A thin film solar cell includes a substrate, a light scattering layer on the substrate, a first electrode layer on the light scattering layer, a plurality of light absorption layers on the first electrode layer, and a second electrode layer on the plurality of light absorption layers.Type: ApplicationFiled: November 15, 2011Publication date: May 17, 2012Inventors: Aleksandr BESSONOV, Young-Tae Cho, Seung-Jae Jung, Eun-Ah Park, Eun-Soo Hwang
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Publication number: 20120112542Abstract: A method of electrically eliminating defective solar cell units that are disposed within an integrated solar cells module and a method of trimming an output voltage of the integrated solar cells module are provided, where the solar cells module has a large number (e.g., 50 or more) of solar cell units integrally disposed therein and initially connected in series one to the next. The method includes providing a corresponding plurality of repair pads, each integrally extending from a respective electrode layer of the solar cell units, and providing a bypass conductor integrated within the module and extending adjacent to the repair pads. Pad-to-pad spacings and pad-to-bypass spacings are such that pad-to-pad connecting bridges may be selectively created between adjacent ones of the repair pads and such that pad-to-bypass connecting bridges may be selectively created between the repair pads and the adjacently extending bypass conductor.Type: ApplicationFiled: January 20, 2012Publication date: May 10, 2012Applicants: SAMSUNG SDI CO., LTD., SAMSUNG ELECTRONICS CO., LTD.Inventors: Myung-Hun SHIN, Dong-Uk Choi, Byoung-June Kim, Jin-Seock Kim, Czang-Ho Lee, Seung-Jae Jung, Joon-Young Seo
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Publication number: 20120094430Abstract: A method of manufacturing a solar cell includes: forming a first electrode on a substrate; forming a P-type layer on the first electrode; forming an N-type layer on the P-type layer using a crystalline silicon manufacturing apparatus; and forming a second electrode on the N-type layer to form the solar cell. In this method, the forming of the N-type layer includes contacting the P-type layer with a gas including monosilane and hydrogen to form a sub N-type layer including an amorphous silicon layer, mirco-crystallizing the amorphous silicon layer by irradiating light onto the amorphous silicon layer, and repeating the contacting and the mirco-crystallizing to form the N-type layer.Type: ApplicationFiled: May 27, 2011Publication date: April 19, 2012Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Seung-Jae JUNG
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Patent number: 7972883Abstract: In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases.Type: GrantFiled: March 9, 2009Date of Patent: July 5, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Jae Jung, Byoung-June Kim, Jin-Seock Kim, Czang-Ho Lee, Myung-Hun Shin, Joon-Young Seo, Dong-Uk Choi, Byoung-Kyu Lee
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Publication number: 20110143483Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.Type: ApplicationFiled: February 24, 2011Publication date: June 16, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventors: Seung-Jae JUNG, Yuk-Hyun NAM, Czang-Ho LEE, Myung-Hun SHIN, Min-Seok OH, Byoung-Kyu LEE, Mi-Hwa LIM, Joon-Young SEO
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Patent number: 7960730Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.Type: GrantFiled: May 5, 2010Date of Patent: June 14, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Je-hun Lee, Dong-ju Yang, Tae-hyung Ihn, Do-hyun Kim, Sun-young Hong, Seung-jae Jung, Chang-oh Jeong, Eun-guk Lee
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Patent number: 7932576Abstract: A transparent conductive layer includes a substrate, a first conductive layer disposed on the substrate, and a second conductive layer disposed on the first conductive layer, wherein the second conductive layer comprises a textured surface and an opening which exposes the first conductive layer, wherein the opening comprises a diameter of about 1 micrometer to about 3 micrometers. Also disclosed is a method of manufacturing the transparent conductive layer and a photoelectric device.Type: GrantFiled: March 30, 2009Date of Patent: April 26, 2011Assignee: Samsung Electronics Co., Ltd.Inventors: Seung-Jae Jung, Yuk-Hyun Nam, Czang-Ho Lee, Myung-Hun Shin, Min-Seok Oh, Byoung-Kyu Lee, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20110067756Abstract: A thin film solar cell includes; a first electrode, a first active layer disposed on the first electrode, a porous intermediate layer disposed on the first active layer, a second active layer disposed on the intermediate layer and a second electrode disposed on the second active layer.Type: ApplicationFiled: August 25, 2010Publication date: March 24, 2011Applicant: SAMGUNG ELECTRONICS CO., LTD.Inventor: Seung-Jae JUNG
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Publication number: 20110023954Abstract: A solar cell includes a first electrode disposed on a substrate, a first light absorption layer disposed on the first electrode, an interlayer disposed on the first light absorption layer, a second light absorption layer disposed on the interlayer, and a second electrode disposed on the second light absorption layer. The solar cell further includes a groove penetrating through the first light absorption layer, the interlayer, and the second light absorption layer. The groove is filled with the second electrode. The interlayer is spaced apart from the second electrode filling the groove, to define a spacer layer which electrically insulates the interlayer from the second electrode filling the groove.Type: ApplicationFiled: December 29, 2009Publication date: February 3, 2011Applicant: SAMSUNG ELECTRONICS CO., LTD.Inventor: Seung-Jae Jung
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Publication number: 20100283050Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.Type: ApplicationFiled: May 5, 2010Publication date: November 11, 2010Inventors: Je-hun Lee, Dong-ju Yang, Tae-hyung Ihn, Do-hyun Kim, Sun-young Hong, Seung-jae Jung, Chang-oh Jeong, Eun-guk Lee
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Patent number: 7772021Abstract: Provided is a method of fabricating a semiconductive oxide thin-film transistor (TFT) substrate. The method includes forming gate wiring on an insulation substrate; and forming a structure in which a semiconductive oxide film pattern and data wiring are stacked on the gate wiring, wherein the semiconductive oxide film pattern is selectively patterned to have channel regions of first thickness and source/drain regions of greater second thickness and where image data is coupled to the source regions by data wiring formed on the source regions. According to a 4-mask embodiment, the data wiring and semiconductive oxide film pattern are defined by a shared etch mask.Type: GrantFiled: November 29, 2007Date of Patent: August 10, 2010Assignee: Samsung Electronics Co., Ltd.Inventors: Je-hun Lee, Dong-ju Yang, Tae-hyung Ihn, Do-hyun Kim, Sun-young Hong, Seung-jae Jung, Chang-oh Jeong, Eun-guk Lee
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Publication number: 20100193006Abstract: A solar cell module includes a substrate, a lower electrode layer, a semiconductor layer and an upper electrode layer for an embodiment. The lower electrode layer may include a plurality of area-separating grooves separating the substrate into an active area and a peripheral area surrounding the active area, and a plurality of first cell-separating grooves formed in the active area. The semiconductor layer is formed on the lower electrode layer. The semiconductor layer includes a plurality of second cell-separating grooves that are spaced apart from the first cell-separating grooves. The upper electrode layer is formed on the semiconductor layer. The upper electrode layer includes a plurality of third cell-separating grooves that are spaced apart from the second separating grooves.Type: ApplicationFiled: December 2, 2009Publication date: August 5, 2010Inventors: Ku-Hyun KANG, Dong-Jin Kim, Yeon-Il Kang, Czang-Ho Lee, Myung-Hun Shin, Dae-Ha Woo, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Joong-Hyun Park
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Publication number: 20100159633Abstract: Provided is a method of manufacturing a photovoltaic device using a Joule heating-induced crystallization method. The method includes: forming a first conductive pattern on a substrate; forming a photoelectric conversion layer on the substrate having the first conductive pattern; and crystallizing at least part of the photoelectric conversion layer by applying an electric field to the photoelectric conversion layer, wherein the photoelectric conversion layer includes a first amorphous semiconductor layer containing first impurities, a second intrinsic, amorphous semiconductor layer, and a third amorphous semiconductor layer containing second impurities.Type: ApplicationFiled: December 18, 2009Publication date: June 24, 2010Inventors: Byoung-Kyu LEE, Se-Jin Chung, Byoung-June Kim, Czang-Ho Lee, Myung-Hun Shin, Min-Seok Oh, Ku-Hyun Kang, Yuk-Hyun Nam, Seung-Jae Jung, Min Park, Mi-Hwa Lim, Joon-Young Seo
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Publication number: 20100154869Abstract: Disclosed herein is a photoelectric conversion device having a semiconductor substrate including a front side and back side, a protective layer formed on the front side of the semiconductor substrate, a first non-single crystalline semiconductor layer formed on the back side of the semiconductor substrate, a first conductive layer including a first impurity formed on a first portion of a back side of the first non-single crystalline semiconductor layer, and a second conductive layer including the first impurity and a second impurity formed on a second portion of the back side of the first non-single crystalline semiconductor layer.Type: ApplicationFiled: June 2, 2009Publication date: June 24, 2010Inventors: Min-Seok Oh, Jung-Tae Kim, Nam-Kyu Song, Min Park, Yun-Seok Lee, Czang-Ho Lee, Myung-Hun Shin, Byoung-Kyu Lee, Yuk-Hyun Nam, Seung-Jae Jung, Mi-Hwa Lim, Joon-Young Seo, Dong-Uk Choi, Dong-Seop Kim, Byoung-June Kim