Abstract: A continuously variable valve duration apparatus may include a camshaft, a cam unit including a cam, and the camshaft inserted into the cam, a guide shaft on which a guide screw thread is formed and disposed perpendicular to the camshaft, a guide bracket on which the guide shaft is mounted, an inner wheel configured to transmit rotation of the camshaft to the cam unit, a wheel housing into which the inner wheel is rotatably inserted and movable perpendicular to the camshaft, and the wheel housing disposed within the guide bracket, a worm wheel to which an inner screw thread configured to engage with the guide screw thread is formed therewithin, and to which an outer screw thread is formed thereon, and the worm wheel disposed within the wheel housing, a control shaft on which a control worm configured to engage with the outer screw thread is formed.

Abstract: The present invention relates to a method for manufacturing an aspherical optical member. Compared with conventional cutting-type or drawing-type optical member manufacturing technology, the present invention can mass-produce an aspherical optical member at a low cost by using a simple stacking method, and can manufacture the aspherical optical member without changing a conventional process line.

Abstract: Provided is a flight vehicle and in particular a flight vehicle in which a main module equipped with a device capable of carrying cargo, photographing, etc. may freely switch directions during flight while applying a posture independent of a thrust module because the thrust module is configured to freely perform roll and pitch motions with respect to the main module.

Abstract: A wafer level fan out package includes a semiconductor die having a first surface, a second surface, and a third surface. A stiffener is disposed on the third surface of the semiconductor die. A conductive via passes through the stiffener. First and second electrically conductive patterns electrically connected to the conductive via are disposed on the first and second surfaces of the semiconductor die and stiffener. Solder balls are electrically connected to the first or second electrically conductive patterns.

Abstract: A method of programming a non-volatile memory device including a first memory block and a second memory block includes: performing a first program operation on a first memory cell in the first memory block and connected to a first word line of a first level with respect to a substrate; after the performing of the first program operation on the first memory cell, performing the first program operation on a second memory cell in the second memory block and connected to a second word line of the first level; and after the performing of the first program operation on the second memory cell, performing a second program operation on the first memory cell.

Abstract: A contaminant reducing device is provided. The contaminant reducing device comprises: an exhaust gas tube for supplying exhaust gas from a combustion engine; a cleaning water supply tube for supplying cleaning water; a scrubber for spraying cleaning water, which is supplied through the cleaning water supply tube, to exhaust gas supplied through the exhaust gas tube; an oxidation unit connected to the exhaust gas tube so as to oxidize the exhaust gas by discharging electricity, emitting ultraviolent rays, or spraying an oxidizer; and a cleaning water discharge tube for discharging cleaning water from inside the scrubber.

Abstract: Provided herein is a method of preparing a bile acid derivative using a continuous flow reaction. When bile acid derivatives are synthesized using a continuous flow reaction according to the present invention, the reaction is very safe compared to an existing batch-type reaction, the reaction time is significantly reduced, and high-quality bile acid derivatives may be synthesized with high efficiency. In particularly, according to the present invention, a hydrogenation reaction proceeds under substantially water-free reaction conditions, and thus the conversion rate (UDCA:CDCA) of a UDCA hydrogenation reaction may be significantly enhanced.

Abstract: A display device includes a first substrate including a display area and a non-display area around the display area; a pad portion at an end part of the first substrate in the non-display area; a power voltage transmitting line electrically connected to the pad portion and surrounding at least part of the display area; a second substrate facing the first substrate; and a sealant between the first substrate and the second substrate and surrounding the display area. In the end part, the power voltage transmitting line includes a first portion overlapping the sealant and extending in a first direction and a second portion not overlapping the sealant, and the second portion includes a first protrusion protruded from the first portion in a second direction crossing the first direction, and a second protrusion protruded in a direction opposite to the second direction.

Abstract: A magnetic memory according to one embodiment of the present invention comprises: a magnetic tunnel junction comprising a free layer, a reference layer, and a tunnel barrier layer disposed between the free layer and the reference layer; a first conductive line disposed adjacent to the free layer; and a second conductive line disposed adjacent to the free layer and intersecting the first conductive line. A magnetization switching method of the magnetic memory comprises the steps of: applying an alternating current-type first current having a first frequency to the first conductive line; and applying an alternating current-type second current having the first frequency to the second conductive line. The free layer performs magnetization reversal, using the first current and the second current, and the magnetic tunnel junction is disposed on an intersection point between the first conductive line and the second conductive line.

Abstract: A fast object detection method and a fast object detection apparatus using an artificial neural network. The fast object detection method includes obtaining an input image; inputting the obtained input image into an object detection neural network using a plurality of preset bounding boxes; and detecting an object included in the input image by acquiring output data of the object detection neural network.

Abstract: Provided is a display device. The display device includes a first substrate; a second substrate disposed facing the first substrate; a sealing member disposed between and surrounding the first substrate and the second substrate and separates a space inside the sealing member from a space outside the sealing member; a pad electrode disposed on the first substrate in the space outside the sealing member; and a connection wiring disposed on the first substrate over the space inside the sealing member and the space outside the sealing member and electrically connected to the pad electrode, wherein the connection wiring comprises a multi-wiring structure located in the space outside the sealing member.

Abstract: A display device including: an image determiner configured to determine whether a still image is displayed by comparing first partial image data that is a portion of image data of a previous frame with second partial image data that is a portion of image data of a current frame at a first time of a first mode in which a non-moving image is displayed, and determine whether the still image is displayed by comparing first frame data that is all image data of a previous frame with second frame data that is all image data of a current frame at a second time of a second mode in which a moving image is displayed; a display panel including pixels that receive a data signal corresponding to image data; and a panel driver configured to change a frequency at which the pixels are driven according to the first and second modes.

Abstract: A memory device includes multiple word lines. A method of operating the memory device includes: performing a first dummy read operation, with respect to first memory cells connected to a first word line among the word lines, by applying a dummy read voltage, having an offset level of a first level, to the first word line; determining, based on a result of the performing of the first dummy read operation, degradation of a threshold voltage distribution of the first memory cells; adjusting an offset level of the dummy read voltage as a second level, based on a result of the determining of the threshold voltage distribution; and performing a second dummy read operation with respect to second memory cells connected to a second word line among the word lines, by applying a dummy read voltage, having the offset level adjusted as the second level, to the second word line among the word lines.

Abstract: Embodiments provide a magnetic memory device and a method of writing a magnetic memory device. The magnetic memory device includes a magnetic tunnel junction including a reference layer, a free layer and a tunnel barrier layer between the reference and free layers, and a first conductive line adjacent to the free layer. A first spin-orbit current having a frequency decreasing with time flows through the first conductive line. The writing method includes applying the first spin-orbit current having the frequency decreasing with time to the first conductive line.

Abstract: A display device includes a first substrate including a display area and a non-display area, which is on the periphery of the display area, a light-emitting element disposed on the first substrate and in the display area, a display signal line which is disposed on the first substrate and in the display area, extends in a first direction, and transmits a signal to the light-emitting element, a common voltage supply line disposed on the first substrate and in the non-display area, a pad disposed on the first substrate and in the non-display area, and electrically connected to the display signal line, and an indentation pad disposed on the first substrate and in the non-display area, and electrically connected to the common voltage supply line, where the indentation pad is disposed closer than the pad to edges of the first substrate in a second direction, which intersects the first direction.

Abstract: The present invention relates to novel modules for transferring magnetic beads, an automated system comprising the same and a method for extracting nucleic acids using the same. The specifically designed magnet module and cover module of the present invention can be employed in the automated liquid handling apparatus by means of pre-existing moving modules (e.g., pipettor module) of the apparatus. The present invention enables a bead transfer-type method for extracting nucleic acids to be performed in an automated manner on the automated liquid handling apparatus. The present invention provides advantages of higher level of automation, more reduced cost and no need for another separate liquid handling apparatus compared to the conventional bead transfer-type method usually performed in the small apparatus designed to be used only for this bead transfer-type method. Also, the present method has the merits of more shortened reaction time compared to the conventional liquid transfer-type method.

Abstract: A method of programming a non-volatile memory device including a first memory block and a second memory block includes: performing a first program operation on a first memory cell in the first memory block and connected to a first word line of a first level with respect to a substrate; after the performing of the first program operation on the first memory cell, performing the first program operation on a second memory cell in the second memory block and connected to a second word line of the first level; and after the performing of the first program operation on the second memory cell, performing a second program operation on the first memory cell.

Abstract: A semiconductor device includes a substrate with an active region, a plurality of conductive line structures on the substrate, an insulating layer separating the plurality of conductive line structures from the substrate, a contact plug between every two adjacent conductive line structures, an insulating spacer structure between each conductive line structure and a corresponding contact plug, a landing pad connected to each contact plug, and a landing pad insulation pattern having an asymmetrical shape based on a vertical axis of the landing pad that extends along a normal to the substrate. The landing pad insulation pattern includes a first portion overlapping the conductive line structures and a second portion overlapping the contact plug, the first and second portions being on opposite sides of the vertical axis.

Abstract: Various aspects of the present disclosure provide a semiconductor device, for example comprising a finger print sensor, and a method for manufacturing thereof. Various aspects of the present disclosure may, for example, provide an ultra-slim finger print sensor having a thickness of 500 ?m or less that does not include a separate printed circuit board (PCB), and a method for manufacturing thereof.

Abstract: A boot Read-Only Memory (ROM) update method and a boot-up method of an embedded system are provided. The boot Read-Only Memory (ROM) update method of an embedded system including a memory and a ROM. The memory includes a user data area and a boot ROM area that includes a first area and a second area. The ROM copies a first boot code from the boot ROM area during boot-up. The boot ROM update method includes writing a second boot code to the second area in response to a first ROM update command. The second boot code includes a second boot ROM image and a second signature for the second boot ROM image. The method also includes verifying validity of the second signature and, if the second signature is valid, swapping the first area and the second area. The first boot code is disposed in the first area and includes a first boot ROM image and a first signature for the first boot ROM image.