Abstract: A fan-out semiconductor package includes a core member having a through-hole; a semiconductor chip disposed in the through-hole of the core member and having an active surface on which connection pads are disposed and an inactive surface disposed to oppose the active surface; a heat radiating member directly bonded to the inactive surface of the semiconductor chip; an encapsulant encapsulating at least a portion of the semiconductor chip; and a connection member disposed on the active surface of the semiconductor chip and including redistribution layers electrically connected to the connection pads of the semiconductor chip.

Abstract: Methods of fabricating an integrated circuit device are provided. The methods may form feature patterns on a substrate using a quadruple patterning technology (QPT) process including one photolithography process and two double patterning processes. Sacrificial spacers obtained by first double patterning process and spacers obtained by second double patterning process may be formed on a feature layer at an equal level.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.

Abstract: An integrated circuit device includes a device isolation trench defining an active area, a gate trench extending in a first direction across the active area and the device isolation film, a gate dielectric film covering an inner wall of the gate trench, and a conductive line filling a part of the gate trench above the gate dielectric film. The active area includes a fin body portion located under the conductive line, and a thinner fin portion protruding from the fin body portion toward the conductive line and having a width less than a width of the fin body portion in the first direction.

Abstract: Disclosed is a touch control device. The touch control device includes a touch panel having a curved surface shape of multiple curvatures. The touch control device includes a base including a metal complex, an electrode groove formed in a touch area of the base, a plurality of sensor electrodes formed on the electrode groove, each including a conductive material, a via hole penetrating the base, a connection electrode connecting the plurality of sensor electrodes through the via hole and an integrated circuit coupled to the base and connected to the sensor electrodes to sense a change in capacitance of the sensor electrodes.

Abstract: A touch input device including a connection member electrically connecting a sensor electrode and a printed circuit board by contact without soldering may include a base including a metal complex, an electrode groove formed by irradiating a laser on the base, a sensor electrode formed on the electrode groove through a plating or deposition process and including a conductive material, a sensor IC to sense a change in capacitance of the sensor electrode, a printed circuit board on which the sensor IC is mounted and is disposed to be coupled with the base, and the connection member provided on the printed circuit board and configured to electrically connect the sensor electrode and the printed circuit board, wherein the connection member may elastically come into contact with the sensor electrode to connect the sensor electrode and the printed circuit board.

Abstract: Methods of fabricating an integrated circuit device are provided. The methods may form feature patterns on a substrate using a quadruple patterning technology (QPT) process including one photolithography process and two double patterning processes. Sacrificial spacers obtained by first double patterning process and spacers obtained by second double patterning process may be formed on a feature layer at an equal level.

Abstract: A method for recognizing characters of handwritten input text includes: receiving, by a handwriting input area, a handwritten input text from a user; calculating, by a controller, a center axis of the handwritten input text; calculating, by the controller, a rotation angle of the center axis based on a reference axis; correcting, by the controller, a slope of the handwritten input text by the rotation angle so that the slope of the handwritten input text is parallel to the reference axis; and performing, by the controller, character recognition of the handwritten input text acquired by correction of the slope.

Abstract: A memory device includes a plurality of memory cells, bit lines connected to the plurality of memory cells, and page buffers coupled to the plurality of memory cells through the bit lines, and performing a read operation on the plurality of memory cells, wherein each of the page buffers comprises: a first latch controlling a bit line precharge operation during the read operation; and a second latch storing a result of a first sensing operation and a result of a second sensing operation performed after the first sensing operation, wherein a value stored in the second latch is inverted when the result of the first sensing operation and the result of second sensing operation are different from each other during the second sensing operation.

Abstract: A method of manufacturing the curved display device includes a process of manufacturing a cover glass assembly by attaching a transparent polymer film to the back surface of a thin film glass of a flat plate, a process of bending and inserting the cover glass assembly into a curved cavity of a mold and then molding an edge member so as to be integrated with an edge portion of the cover glass assembly to maintain the cover glass assembly in a bent state, and a process of attaching a flexible display panel to the back surface of the cover glass assembly in a curved state after molding the edge member. The curved display device includes a cover glass assembly, an edge member to maintain the cover glass assembly in a bent state, and a flexible display panel attached to the back surface of the cover glass assembly.

Abstract: Aspects of the present disclosure relate to protecting the contents of memory in an electronic device, and in particular to systems and methods for transferring data between memories of an electronic device in the presence of strong magnetic fields. In one embodiment, a method of protecting data in a memory in an electronic device includes storing data in a first memory in the electronic device; determining, via a magnetic sensor, a strength of an ambient magnetic field; comparing the strength of the ambient magnetic field to a threshold; transferring the data in the first memory to a second memory in the electronic device upon determining that the strength of the ambient magnetic field exceeds the threshold; and transferring the data from the second memory to the first memory upon determining that the strength of the ambient magnetic field no longer exceeds the threshold.

Abstract: Presented herein is a memory device and a method of operating the memory device. The memory device may include a memory cell, and a page buffer coupled to the memory cell via a bit line and configured to perform a read operation on the memory cell. The page buffer may include a storage unit configured to control a bit line precharge operation during the read operation and to store a result value of a first sensing operation. After the bit line precharge operation, a value stored in the storage unit is inverted before the storage unit stores the result value of the first sensing operation.

Abstract: An electronic component package includes a frame having a cavity, an electronic component disposed in the cavity of the frame, a first metal layer disposed on an inner wall of the cavity of the frame, an encapsulant encapsulating the electronic component, and a redistribution layer disposed below the frame and the electronic component.

Abstract: A memory device includes a plurality of memory cells, bit lines connected to the plurality of memory cells, and page buffers coupled to the plurality of memory cells through the bit lines, and performing a read operation on the plurality of memory cells, wherein each of the page buffers comprises: a first latch controlling a bit line precharge operation during the read operation; and a second latch storing a result of a first sensing operation and a result of a second sensing operation performed after the first sensing operation, wherein a value stored in the second latch is inverted when the result of the first sensing operation and the result of second sensing operation are different from each other during the second sensing operation.

Abstract: The present invention relates to an apparatus for recognizing intention of a horse-riding simulator user, and a method thereof, and the apparatus for recognizing intention of a horse-riding simulator user can provide a safe and realistic horse-riding simulation environment to a user by recognizing an aid signal and an intention signal of the user to sense a dangerous situation and accordingly coping with the situation. According to the present invention, it is possible to increase the sense of the real for the user by enabling the horse-riding simulator user to perform similar interaction to actual horse-riding, and to increase effects of horse-riding training using the horse-riding simulator. Particularly, there is an advantage that the dangerous situation is sensed for safe riding, and it is possible to contribute to formation of a related technology market by providing an effective method for recognition of the intention of the horse-riding simulator user.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes: a deep trench in a substrate; a sidewall insulating film on a side surface of the deep trench; an interlayer insulating film on the sidewall insulating film; and an air gap in the interlayer insulating film.

Abstract: According to various embodiments, an electronic device comprises: a housing including a first surface, a second surface facing in the opposite direction of the first surface, and side surfaces that surround at least a part of a space between the first surface and the second surface; a first sensor and a second sensor which are disposed in the housing or exposed through at least one surface; a communication circuit disposed in the housing; an antenna radiator electrically connected with the communication circuit; and a control circuit electrically connected with at least one of the first and second sensors, and the communication circuit, wherein the control circuit is configured to: transmit or receive, to or from an external device, a first signal output from the communication circuit, using the antenna radiator; detect, using the first sensor, whether an external object has approached within a predetermined distance at least a part of the antenna radiator to generate a second signal; detect, using the second

Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.

Abstract: In a particular aspect, an apparatus includes a magnetic random access memory (MRAM) cell including a pair of cross coupled inverters including a first inverter and a second inverter. The first inverter includes a first transistor coupled to a first node and a second transistor coupled to the first node. The second inverter includes a third transistor coupled to a second node and a fourth transistor coupled to the second node. The MRAM cell includes a first magnetic tunnel junction (MTJ) element coupled to the second transistor and a second MTJ element coupled to the fourth transistor. The apparatus further includes a voltage initialization circuit coupled to the MRAM cell. The voltage initialization circuit is configured to substantially equalize voltages of the first node and the second node in response to an initialization signal.