Abstract: Disclosed is a method of fuel cell analysis. The method includes measuring at least a portion of an electrode of a fuel cell to determine a measured result. The method also includes analyzing a state of the fuel cell according to the measured result.

Abstract: An apparatus for providing operation logic of a fuel cell system may include an activation part configured to perform activation on a fuel cell, and an operating performance part configured to perform constant current operation according to the performing of activation.

Abstract: Disclosed are an array substrate, a display panel and a method for repairing bad spots on the panel. The array substrate includes a substrate and a plurality of data lines and a plurality of scan lines provided on the substrate, the plurality of the data lines and a plurality of the scan lines are insulated and intersected mutually to define a plurality of sub-pixel areas provided in an array, each sub-pixel area is provided with a sub-pixel, the sub-pixel includes a plurality of pixel electrodes provided in a same layer and spaced to form a plurality of light-emitting areas, two adjacent pixel electrodes are electrically connected to each other via a connection electrode, and a pixel driving circuit is electrically connected to a corresponding data line, a corresponding scan line, and a corresponding pixel electrode.

Abstract: The polymer electrolyte membrane includes: a first ion conductive polymer layer; and a second ion conductive polymer layer disposed on at least one surface of the first ion conductive polymer layer, wherein the first ion conductive polymer layer comprises a first ion conductive polymer comprising a sulfonic acid group, wherein the second ion conductive polymer layer comprises a second ion conductive polymer comprising a carboxylic acid group, and wherein a thickness of the second ion conductive polymer layer is in a range of 1% to 80% of a thickness of the polymer electrolyte membrane. Further, disclosed are the method for preparing the same, the membrane-electrode assembly including the same, and the fuel cell including the same.

Abstract: Disclosed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin film transistor (TFT) including a gate electrode and a source electrode provided on a substrate, a planarization layer provided on the TFT to have a step height, an anode electrode provided on the planarization layer and connected to the source electrode, an organic light emitting layer provided on an upper surface of the anode electrode, and a cathode electrode provided on the organic light emitting layer. The planarization layer includes a first area and a second area, provided at different heights, and a third area including an inclined surface between the first area and the second area. Also, the method includes forming a planarization layer on the source electrode to have a step height.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2.

Abstract: A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.

Abstract: Disclosed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin film transistor (TFT) including a gate electrode and a source electrode provided on a substrate, a planarization layer provided on the TFT to have a step height, an anode electrode provided on the planarization layer and connected to the source electrode, an organic light emitting layer provided on an upper surface of the anode electrode, and a cathode electrode provided on the organic light emitting layer. The planarization layer includes a first area and a second area, provided at different heights, and a third area including an inclined surface between the first area and the second area. Also, the method includes forming a planarization layer on the source electrode to have a step height.

Abstract: There is provided a car-key searching system comprising: a car-key searching device configured to generate a car-key device alarm request message in a response to a car-key device alarm request from a user, and to transmit the message to a searched car-key device; and the searched car key device configured to generate a vibration or a sound upon receiving the car-key device alarm request message from the car-key searching device.

Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.

Abstract: Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

Abstract: A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.