Abstract: A filter holder comprises: a plurality of filter frames disposed such that at least some thereof are adjacent to each other; and a folding member which supports filter frames, from among the plurality of filter frames, adjacent to each other so as to be rotatable with respect to each other. The folding member comprises: a folding part which has a predetermined thickness and is flexible so as to be foldable by means of rotation of the adjacent filter frames adjacent with respect to each other; and a plurality of edge parts which are connected to the respective sides of the folding part with the folding portion therebetween and rotate together with the adjacent filter frames, and wherein when viewed from a cross-section of the folding member, the edge parts may have a greater thickness than the folding part.

Abstract: Disclosed herein is a multi-channel device for detecting plasma at an ultra-fast speed, including: a first antenna module connected to a first output terminal in contact with a substrate on a chuck of a process chamber and extending to ground, and receiving a first leakage current leaking through the substrate to increase reception sensitivity of the leakage current; a first current detection module detecting the first leakage current; a current measurement module receiving the first leakage current output from the first current detection module, and extracting the received first leakage current for each predetermined period to generate a first leakage current measurement information; and a control module comparing the first leakage current measurement information with a reference value to generate first arcing occurrence information.

Abstract: An apparatus for preventing a sub-frame of an electric vehicle with a wireless charging pad from being pushed back includes: a push bracket member having one side portion coupled to a front end module provided in front of a sub-frame of the electric vehicle and extending to be disposed between the sub-frame and a wireless charging pad mounted below the sub-frame. Upon a forward vehicle collision, the apparatus can induce deformation of the sub-frame equipped with the wireless charging pad to prevent the sub-frame from being pushed backward.

Abstract: An air filter comprises: a first filter frame in which a plurality of first chambers are formed; a second filter frame in which a plurality of second chambers are formed and which is arranged at the rear of the first filter frame; and a filter material which is accommodated in the plurality of first chambers and the plurality of second chambers to filter air, wherein the first filter frame and the second filter frame are arranged so that, when seen from the front, the center of each of the plurality of second chambers is out of line with the center of each of the plurality of first chambers, in the vertical direction.

Abstract: Disclosed herein is a method of printing a nanostructure including: preparing a template substrate on which a pattern is formed; forming a replica pattern having an inverse phase of the pattern by coating a polymer thin film on an upper portion of the template substrate, adhering a thermal release tape to an upper portion of the polymer thin film, and separating the polymer thin film from the template substrate; forming a nanostructure by depositing a functional material on the replica pattern; and printing the nanostructure deposited on the replica pattern to a substrate by positioning the nanostructure on the substrate, applying heat and pressure to the nanostructure, and weakening an adhesive force between the thermal release tape and the replica pattern by the heat.

Abstract: Disclosed herein is a method of depositing a transition metal single-atom catalyst including preparing a carbon carrier, and depositing a transition metal single-atom catalyst on the carbon carrier, in which the carbon carrier is surface-treated by an oxidation process, and wherein the deposition is carried out by an arc plasma process.

Abstract: An apparatus for embedding a sentence feature vector according to an embodiment includes a sentence acquisitor configured to acquire a first sentence and a second sentence, each including one or more words; a vector extractor configured to extract a first feature vector corresponding to the first sentence and a second feature vector corresponding to the second sentence by independently inputting each of the first sentence and the second sentence into a feature extraction network; and a vector compressor configured to compress the first feature vector and the second feature vector into a first compressed vector and a second compressed vector, respectively, by independently inputting each of the first feature vector and the second feature vector into a convolutional neural network (CNN)-based vector compression network.

Abstract: A display device includes a substrate including a display area and a non-display area, a plurality of pixels disposed in the display area, a common voltage supply wiring overlapping the non-display area and disposed on the substrate, a driving voltage supply wiring overlapping the non-display area and disposed on the substrate, and a data voltage supply wiring overlapping the non-display area and electrically connected to the plurality of pixels, where at least one of the common voltage supply wiring and the driving voltage supply wiring includes a chamfered area, the data voltage supply wiring includes a first data voltage supply wiring, a second data voltage supply wiring, and a third data voltage supply wiring, and the first to third data voltage supply wirings are disposed in different layers.

Abstract: Disclosed are an array substrate, a display panel and a method for repairing bad spots on the panel. The array substrate includes a substrate and a plurality of data lines and a plurality of scan lines provided on the substrate, the plurality of the data lines and a plurality of the scan lines are insulated and intersected mutually to define a plurality of sub-pixel areas provided in an array, each sub-pixel area is provided with a sub-pixel, the sub-pixel includes a plurality of pixel electrodes provided in a same layer and spaced to form a plurality of light-emitting areas, two adjacent pixel electrodes are electrically connected to each other via a connection electrode, and a pixel driving circuit is electrically connected to a corresponding data line, a corresponding scan line, and a corresponding pixel electrode.

Abstract: The polymer electrolyte membrane includes: a first ion conductive polymer layer; and a second ion conductive polymer layer disposed on at least one surface of the first ion conductive polymer layer, wherein the first ion conductive polymer layer comprises a first ion conductive polymer comprising a sulfonic acid group, wherein the second ion conductive polymer layer comprises a second ion conductive polymer comprising a carboxylic acid group, and wherein a thickness of the second ion conductive polymer layer is in a range of 1% to 80% of a thickness of the polymer electrolyte membrane. Further, disclosed are the method for preparing the same, the membrane-electrode assembly including the same, and the fuel cell including the same.

Abstract: Disclosed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin film transistor (TFT) including a gate electrode and a source electrode provided on a substrate, a planarization layer provided on the TFT to have a step height, an anode electrode provided on the planarization layer and connected to the source electrode, an organic light emitting layer provided on an upper surface of the anode electrode, and a cathode electrode provided on the organic light emitting layer. The planarization layer includes a first area and a second area, provided at different heights, and a third area including an inclined surface between the first area and the second area. Also, the method includes forming a planarization layer on the source electrode to have a step height.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: A method of fabricating a nonpolar gallium nitride-based semiconductor layer is provided. The method is a method of fabricating a nonpolar gallium nitride layer using metal organic chemical vapor deposition, and includes disposing a gallium nitride substrate with an m-plane growth surface within a chamber, raising a substrate temperature to a GaN growth temperature by heating the substrate, and growing a gallium nitride layer on the gallium nitride substrate by supplying a Ga source gas, an N source gas, and an ambient gas into the chamber at the growth temperature. The supplied ambient gas contains N2 and does not contain H2.

Abstract: A light emitting device includes a substrate including gallium nitride, and a semiconductor layer disposed on the substrate, the semiconductor layer including an n-type nitride semiconductor layer, an active layer disposed on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer disposed on the active layer, in which an angle defined between a crystal growth plane of the substrate and an m-plane thereof is in a range of 3.5° to 6.

Abstract: Disclosed are an organic light emitting display device and a method of manufacturing the same. The organic light emitting display device includes a thin film transistor (TFT) including a gate electrode and a source electrode provided on a substrate, a planarization layer provided on the TFT to have a step height, an anode electrode provided on the planarization layer and connected to the source electrode, an organic light emitting layer provided on an upper surface of the anode electrode, and a cathode electrode provided on the organic light emitting layer. The planarization layer includes a first area and a second area, provided at different heights, and a third area including an inclined surface between the first area and the second area. Also, the method includes forming a planarization layer on the source electrode to have a step height.

Abstract: There is provided a car-key searching system comprising: a car-key searching device configured to generate a car-key device alarm request message in a response to a car-key device alarm request from a user, and to transmit the message to a searched car-key device; and the searched car key device configured to generate a vibration or a sound upon receiving the car-key device alarm request message from the car-key searching device.

Abstract: Disclosed herein is a light emitting diode (LED) including: a gallium nitride substrate; a gallium nitride-based first contact layer disposed on the gallium nitride substrate; a gallium nitride-based second contact layer; an active layer having a multi-quantum well structure and disposed between the first and second contact layers; and a super-lattice layer having a multilayer structure and disposed between the first contact layer and the active layer. By employing the gallium nitride substrate, the crystallinity of the semiconductor layers can be improved, and in addition, by disposing the super-lattice layer between the first contact layer and the active layer, a crystal defect that may be generated in the active layer can be prevented.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Exemplary embodiments of the present invention provide a method of growing a nitride semiconductor layer including growing a gallium nitride-based defect dispersion suppressing layer on a gallium nitride substrate including non-defect regions and a defect region disposed between the non-defect regions, and growing a gallium nitride semiconductor layer on the defect dispersion suppressing layer.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the super lattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.