Abstract: A liquid crystal display device has a shorting bar for testing a thin film transistor. First and second source shorting bars are alternatively at lest two-by-two connected to source pads, and at least two adjacent pixel electrodes are scanned by being recognized as one, so that an active panel of a high resolution product with a fine isolation distance between pixel electrodes and area can be tested.

Abstract: Disclosed is a liquid crystal display device and fabricating method thereof to increase a capacitance of a storage capacitor as well as stabilize performance of a thin film transistor. The present invention includes a gate electrode and a gate line on a substrate, an insulating layer on the gate electrode and gate line wherein the insulating layer on the gate line is thinner than the insulating layer on the gate electrode, an active layer formed on the gate electrode so as to leave the insulating layer therebetween, source and drain electrodes on the active layer, and a capacitor electrode formed on the gate line.

Abstract: An array substrate for a liquid crystal display device, comprising: a substrate; a gate line on the substrate; a data line crossing the gate line to define a pixel region; a thin film transistor connected to the gate line and the data line, and includes a gate electrode, an active layer, an ohmic contact layer, and source and drain electrodes; and a pixel electrode connected to the thin film transistor, and disposed at the pixel region, wherein the gate electrode includes a first sunken portion overlapping the drain electrode and a second portion overlapping the same electrode.

Abstract: A liquid crystal display having a liquid crystal display panel driven according a dot inversion method using a data driver driven according to a column inversion method includes dummy liquid crystal cells formed in first and last ones of successive columns in the liquid crystal display panel.

Abstract: A line-on-glass (LOG)-type liquid crystal display device includes a picture display area having liquid crystal cells arranged where gate lines and data lines cross each other, a storage capacitor provided at each of the liquid crystal cells to maintain a charged pixel voltage, and a dummy gate line. (LOG)-type signal lines are provided by a line-on-glass technique outside a picture display area and transmit driving signals required by gate driver integrated circuits to drive the gate lines. The dummy gate line has a smaller resistance value than others of the gate lines.

Abstract: A line-on-glass (LOG) type liquid crystal display device prevents deterioration in picture quality due to line resistances in LOG signal lines includes a display area having liquid crystal cells arranged at crossings of gate and data lines, a storage capacitor arranged within each of the liquid crystal cells for maintaining charged pixel voltages, and a dummy gate line. A line-on-glass type signal line group outside the display area transmits driving signals to the gate driver integrated circuits for driving the gate lines. A first signal line outside the display area is mounted on gate tape carrier packages. A second signal line connects the first gate low voltage and dummy lines, is insulated from, and crosses the gate lines outside the display area. A third signal line connects the first gate low voltage line and the dummy gate line to connect the first and second gate low voltage lines in parallel.

Abstract: Disclosed is a liquid crystal display device and fabricating method thereof to increase a capacitance of a storage capacitor as well as stabilize performance of a thin film transistor. The present invention includes a gate electrode and a gate line on a substrate, an insulating layer on the gate electrode and gate line wherein the insulating layer on the gate line is thinner than the insulating layer on the (gate electrode, an active layer formed on the gate electrode so as to leave the insulating layer therebetween, source and drain electrodes on the active layer, and a capacitor electrode formed on the gate line.

Abstract: A liquid crystal display device has a shorting bar for testing a thin film transistor. First and second source shorting bars are alternatively at lest two-by-two connected to source pads, and at least two adjacent pixel electrodes are scanned by being recognized as one, so that an active panel of a high resolution product with a fine isolation distance between pixel electrodes and area can be tested.

Abstract: An LCD device includes a displaying unit having a plurality of pixel areas defined by a plurality of gate lines and data lines disposed in longitudinal and transverse directions, a thin film transistor (TFT) formed in each of the pixel areas to be connected to a pixel electrode formed in the pixel area, and a gate pad and a data pad formed on ends of the corresponding gate line and data line; and a dummy region formed on an outer portion of the displaying unit, and including a gate shorting bar and a data shorting bar which are connected to the gate pads and the data pads to apply test signal(s) to the TFTs, wherein at least one of the gate shorting bar and the data shorting bar is a single shorting bar.

Abstract: A liquid crystal display device and a fabricating method thereof enabling an optimized process by forming metal samples having various line widths on a circumference of a cell. The metal samples enable the measurement of a specific resistance of a data line formed by an ashing process. The specific resistance measurements are useful for designing the device. The invention includes a substrate divided into active and dummy areas, in which gate lines and data lines formed in the active area in directions perpendicular to each other. A plurality of metal samples are formed in the dummy area in which the metal samples have differing line widths in order to monitor the etch rate when forming the data line and the source/drain electrodes of the display device.

Abstract: An array substrate for a liquid crystal display device includes a substrate; gate and data lines perpendicular to each other on the substrate; a thin film transistor connected to the gate and data lines, the thin film transistor having a semiconductor layer, and source and drain electrodes facing and spaced apart from each other; a passivation layer over the gate and data lines and the thin film transistor, the passivation layer having a contact hole exposing a portion of top and side surfaces of the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.

Abstract: A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.