Abstract: Fringe field switching (FFS) mode liquid crystal display device and method for fabricating the same, are discussed, the device including a gate line formed in one direction on a surface of a first substrate; a data line formed on the first substrate, and crossed with the gate line to thereby define a pixel region; a thin-film transistor formed on the first substrate, and formed at an intersection of the gate line and the data line; an insulating layer having an opening portion located at an upper portion of the thin-film transistor to expose at least a gate portion of the thin-film transistor; a pixel electrode formed at an upper portion of the insulating layer, and connected to the exposed thin-film transistor; a passivation layer formed at the upper portion of the insulating layer; and common electrodes formed at an upper portion of the passivation layer and separated from one another.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: Exemplary embodiments of the present invention relate to a method of fabricating a light emitting diode (LED). According to an exemplary embodiment of the present invention, the method includes growing a first GaN-based semiconductor layer on a substrate at a first temperature by supplying a chamber with a nitride source gas and a first metal source gas, stopping the supply of the first metal source gas and maintaining the first temperature for a first time period after stopping the supply of the first metal source gas, decreasing the temperature of the substrate to the a second temperature after the first time period elapses, growing an active layer of the first GaN-based semiconductor layer at the second temperature by supplying the chamber with a second metal source gas.

Abstract: Exemplary embodiments of the present invention disclose a light emitting diode including an n-type contact layer doped with silicon, a p-type contact layer, an active region disposed between the n-type contact layer and the p-type contact layer, a superlattice layer disposed between the n-type contact layer and the active region, the superlattice layer including a plurality of layers, an undoped intermediate layer disposed between the superlattice layer and the n-type contact layer, and an electron reinforcing layer disposed between the undoped intermediate layer and the superlattice layer. Only a final layer of the superlattice layer closest to the active region is doped with silicon, and the silicon doping concentration of the final layer is higher than that of the n-type contact layer.

Abstract: A monochrome light emitting display device and a method for fabricating the same are disclosed, in which a pixel structure of a monochrome light emitting display device is changed to improve a contrast ratio and resolution and at the same time color shift is prevented from occurring, so as to display clearer image. The monochrome light emitting display device comprises a display panel having unit pixels of first and second sub-pixels arranged in a matrix arrangement to display a monochrome image; gate and data drivers respectively driving gate lines and data lines of the display panel; and a timing controller aligning externally input RGB data to be suitable for driving of the display panel to supply the RGB data to the data driver and generating data and gate control signals to control the data and gate drivers.

Abstract: This invention relates to a liquid crystal display and a fabricating method thereof that provides a uniform parasitic capacity of a thin film transistor. In a liquid crystal display and a fabricating method thereof according to the present invention, a source electrode of the thin film transistor is connected to the data line and a drain electrode of the thin film transistor is inserted into a hollowed part of the source electrode in the data line direction.

Abstract: A line-on-glass (LOG) type liquid crystal display device prevents deterioration in picture quality due to line resistances in LOG signal lines includes a display area having liquid crystal cells arranged at crossings of gate and data lines, a storage capacitor arranged within each of the liquid crystal cells for maintaining charged pixel voltages, and a dummy gate line. A line-on-glass type signal line group outside the display area transmits driving signals to the gate driver integrated circuits for driving the gate lines. A first signal line outside the display area is mounted on gate tape carrier packages. A second signal line connects the first gate low voltage and dummy lines, is insulated from, and crosses the gate lines outside the display area. A third signal line connects the first gate low voltage line and the dummy gate line to connect the first and second gate low voltage lines in parallel.

Abstract: A fabricating method of an array substrate for a liquid crystal display device includes forming a gate line on a substrate; forming an ohmic contact layer on the substrate; forming a data line and source and drain electrodes on the ohmic contact layer, the source electrode being connected to the data line, the source and drain electrodes facing and spaced apart from each other; forming a passivation layer having a contact hole on the data line and the source and drain electrodes, the contact hole exposing a portion of a side surface of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode being connected to the drain electrode through the contact hole.

Abstract: A method of making an LCD device including a displaying unit having a plurality of pixel areas defined by a plurality of gate lines and data lines disposed in longitudinal and transverse directions, a thin film transistor (TFT) formed in each of the pixel areas to be connected to a pixel electrode formed in the pixel area, and a gate pad and a data pad formed on ends of the corresponding gate line and data line; and a dummy region formed on an outer portion of the displaying unit, and including a gate shorting bar and a data shorting bar which are connected to the gate pads and the data pads to apply test signal(s) to the TFTs, wherein the data shorting bar is a single shorting bar.

Abstract: A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

Abstract: A liquid crystal display having a liquid crystal display panel driven according a dot inversion method using a data driver driven according to a column inversion method includes dummy liquid crystal cells formed in first and last ones of successive columns in the liquid crystal display panel.

Abstract: A liquid crystal display device and a fabricating method thereof enabling an optimized process by forming metal samples having various line widths on a circumference of a cell. The metal samples enable the measurement of a specific resistance of a data line formed by an ashing process. The specific resistance measurements are useful for designing the device. The invention includes a substrate divided into active and dummy areas, in which gate lines and data lines formed in the active area in directions perpendicular to each other. A plurality of metal samples are formed in the dummy area in which the metal samples have differing line widths in order to monitor the etch rate when forming the data line and the source/drain electrodes of the display device.

Abstract: A fabricating method of an array substrate for a liquid crystal display device includes forming a gate line on a substrate; forming an ohmic contact layer on the substrate; forming a data line and source and drain electrodes on the ohmic contact layer, the source electrode being connected to the data line, the source and drain electrodes facing and spaced apart from each other; forming a passivation layer having a contact hole on the data line and the source and drain electrodes, the contact hole exposing a portion of a side surface of the drain electrode; and forming a pixel electrode on the passivation layer, the pixel electrode being connected to the drain electrode through the contact hole.

Abstract: An array substrate for a liquid crystal display device includes a substrate; gate and data lines perpendicular to each other on the substrate; a thin film transistor connected to the gate and data lines, the thin film transistor having a semiconductor layer, and source and drain electrodes facing and spaced apart from each other; a passivation layer over the gate and data lines and the thin film transistor, the passivation layer having a contact hole exposing a portion of top and side surfaces of the drain electrode; and a pixel electrode on the passivation layer, the pixel electrode connected to the drain electrode through the contact hole.

Abstract: An array substrate for a liquid crystal display device, comprising: a substrate; a gate line on the substrate; a data line crossing the gate line to define a pixel region; a thin film transistor connected to the gate line and the data line, and includes a gate electrode, an active layer, an ohmic contact layer, and source and drain electrodes; and a pixel electrode connected to the thin film transistor, and disposed at the pixel region, wherein the gate electrode includes a first sunken portion overlapping the drain electrode and a second portion overlapping the same electrode.

Abstract: A thin film transistor substrate and a fabricating method thereof that are capable of improving an aperture ratio. A gate electrode on that substrate has an inclined head and a concave neck.

Abstract: An LCD device includes a displaying unit having a plurality of pixel areas defined by a plurality of gate lines and data lines disposed in longitudinal and transverse directions, a thin film transistor (TFT) formed in each of the pixel areas to be connected to a pixel electrode formed in the pixel area, and a gate pad and a data pad formed on ends of the corresponding gate line and data line; and a dummy region formed on an outer portion of the displaying unit, and including a gate shorting bar and a data shorting bar which are connected to the gate pads and the data pads to apply test signal(s) to the TFTs, wherein at least one of the gate shorting bar and the data shorting bar is a single shorting bar.

Abstract: A line-on-glass (LOG)-type liquid crystal display device includes a picture display area having liquid crystal cells arranged where gate lines and data lines cross each other, a storage capacitor provided at each of the liquid crystal cells to maintain a charged pixel voltage, and a dummy gate line. (LOG)-type signal lines are provided by a line-on-glass technique outside a picture display area and transmit driving signals required by gate driver integrated circuits to drive the gate lines. The dummy gate line has a smaller resistance value than others of the gate lines.

Abstract: An LCD device includes a displaying unit having a plurality of pixel areas defined by a plurality of gate lines and data lines disposed in longitudinal and transverse directions, a thin film transistor (TFT) formed in each of the pixel areas to be connected to a pixel electrode formed in the pixel area, and a gate pad and a data pad formed on ends of the corresponding gate line and data line; and a dummy region formed on an outer portion of the displaying unit, and including a gate shorting bar and a data shorting bar which are connected to the gate pads and the data pads to apply test signal(s) to the TFTs, wherein at least one of the gate shorting bar and the data shorting bar is a single shorting bar.

Abstract: A liquid crystal display having a liquid crystal display panel driven according a dot inversion method using a data driver driven according to a column inversion method includes dummy liquid crystal cells formed in first and last ones of successive columns in the liquid crystal display panel.