Abstract: Disclosed is a see-through type photovoltaic module that includes: a first transparent substrate; a second transparent substrate; a first transparent electrode and a second electrode, all of which are placed between the first transparent substrate and the second transparent substrate; a photoactive layer being placed between the first transparent electrode and the second electrode and converting light into electrical energy; and a protective layer placed between the second electrode and the second transparent substrate, wherein a 3-dimensional photonic crystal structural layer is formed on the surface of the second transparent substrate facing the first transparent substrate.

Abstract: Disclosed is a tandem type integrated photovoltaic module. The tandem type integrated photovoltaic module includes: a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer including a plurality of unit cell layers, and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer of the second cell in order to connect the upper electrode of the first cell with the lower electrode of the second cell.

Abstract: Disclosed is an integrated thin-film photovoltaic module. The integrated thin-film photovoltaic module includes a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, wherein a plurality of through holes are formed to be spaced from each other in the upper electrode and the photoelectric conversion layer of the first cell, and wherein the through hole is filled with a conductive material such that the upper electrode of the second cell is connected with the lower electrode of the first cell.

Abstract: A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell converting light into electricity on the first electrode; forming an intermediate reflector on the first unit cell, the intermediate reflector including metallic nanoparticles arranged therein; and forming a second unit cell converting light into electricity on the intermediate reflector.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a flexible substrate; a first electrode and a second electrode located over the flexible substrate; and at least one unit cell located between the first electrode and the second electrode, wherein the first electrode includes a transparent conductive oxide layer, wherein a texturing structure is formed on the transparent conductive oxide layer, and wherein a ratio of a root mean square (rms) roughness to an average pitch of the texturing structure is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell on the first electrode; forming a portion of an intermediate reflector on the first unit cell in a first manufacturing system, the intermediate reflector including a plurality of first and second sub-layers alternately stacked; exposing to the air the substrate on which the portion of the intermediate reflector is formed; forming the rest of the intermediate reflector in a second manufacturing system, the intermediate reflector including the plurality of the first and second sub-layers alternately stacked; forming a second unit cell on the intermediate reflector; and forming a second electrode on the second unit cell.

Abstract: Disclosed is a photovoltaic module which includes a plurality of stacked unit cells and is encapsulated by an encapsulant and is designed such that an initial short circuit current of the photovoltaic module under standard test conditions is determined by the initial short circuit current of a top cell or a bottom cell among the plurality of the unit cells in accordance with a nominal operating cell temperature of the photovoltaic module.

Abstract: Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method comprising: forming a first electrode on a substrate; forming a first unit cell comprising an intrinsic semiconductor layer on the first electrode; forming an intermediate reflector on the first unit cell, and the intermediate reflector comprising a plurality of sub-layers stacked alternately by changing a flow rate of non-silicon based source gas; forming a second unit cell comprising an intrinsic semiconductor layer on the intermediate reflector; and forming a second electrode on the second unit cell.

Abstract: A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

Abstract: Disclosed is a method for manufacturing a photovoltaic device that includes: providing a substrate having a first electrode formed thereon; forming a first unit cell, the first unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, which are sequentially stacked from the first electrode; exposing to the air either a portion of an intermediate reflector formed on the first unit cell or the second conductive silicon layer of the first unit cell; forming the rest of the intermediate reflector or the entire intermediate reflector on the second conductive silicon layer of the first unit cell in a second manufacturing system; and forming a second unit cell on the intermediate reflector in the second manufacturing system, the second unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, sequentially stacked.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.

Abstract: A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

Abstract: A photovoltaic device including a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: Disclosed is an integrated thin-film photovoltaic module. The integrated thin-film photovoltaic module includes a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, wherein a plurality of through holes are formed to be spaced from each other in the upper electrode and the photoelectric conversion layer of the first cell, and wherein the through hole is filled with a conductive material such that the upper electrode of the second cell is connected with the lower electrode of the first cell.

Abstract: Disclosed is a tandem type integrated photovoltaic module. The tandem type integrated photovoltaic module includes a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer and an upper electrode, wherein the photoelectric conversion layer comprises a first unit cell layer, a second unit cell layer and an intermediate reflector located between the first unit cell layer and the second unit cell layer; wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer on the lower electrode of the first cell in order to connect the upper electrode of the second cell with the lower electrode of the first cell.

Abstract: Disclosed is a tandem type integrated photovoltaic module. The tandem type integrated photovoltaic module includes: a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer including a plurality of unit cell layers, and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer of the second cell in order to connect the upper electrode of the first cell with the lower electrode of the second cell.