Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer.

Abstract: Disclosed is a photovoltaic device including a first electrode including a transparent conductive oxide layer; a metal oxide layer which is placed on the first electrode; a photoelectric conversion layer which is placed on the metal oxide layer and includes a p-type semiconductor layer, an intrinsic semiconductor layer and an n-type semiconductor layer; and a second electrode which is placed on the photoelectric conversion layer.

Abstract: Disclosed is a thin film silicon solar cell including: a substrate; a first electrode which is stacked on the substrate; a unit cell which is stacked on the first electrode; and a second electrode which is stacked on the unit cell, wherein the unit cell includes a p-type window layer, an i-type photoelectric conversion layer and an n-type layer, and wherein the n-type layer includes an n-type silicon alloy reflector profiled such that a concentration of a refractive index reduction element is changed gradually or alternately with the increase in a distance from a light incident side.

Abstract: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values.

Abstract: A thin film silicon solar cell including: a front transparent electrode stacked on a transparent insulating substrate; a p-type layer stacked on the front transparent electrode; an i-type photoelectric conversion layer stacked on the p-type layer; an n-type Saver stacked, on the i-type photoelectric conversion layer; and a metal back electrode layer stacked on the n-type layer, wherein the n-type layer includes: an n-type amorphous silicon first n layer which is stacked on the i-type photoelectric conversion layer and has a thickness of 3 nm to 7 nm; and an n-type silicon second n layer which is stacked on the first n layer and has a thickness of 15 nm to 30 nm and is more highly hydrogen-diluted than the first n layer.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device according to the present invention includes: a first electrode; a second electrode; and a p-type window layer, a buffer layer, a light absorbing layer and an n-type layer, which are sequentially stacked between the first electrode and the second electrode, wherein, when the p-type window layer is composed of hydrogenated amorphous silicon oxide, the buffer layer is composed of either hydrogenated amorphous silicon carbide or hydrogenated amorphous silicon oxide, and wherein, when the p-type window layer is composed of hydrogenated amorphous silicon carbide, the buffer layer is composed of hydrogenated amorphous silicon oxide.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes a substrate; a first unit cell disposed on the substrate and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer; an intermediate reflector disposed on the first unit cell and comprising a hydrogenated n-type microcrystalline silicon carbide or a hydrogenated n-type microcrystalline silicon nitride profiled such that carbon concentration or nitride concentration is higher the farther it is from a light incident side; and a second unit cell disposed on the intermediate reflector and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer.

Abstract: Disclosed is an integrated thin film photovoltaic module that includes: a first cell and a second cell, all of which are formed respectively by stacking on a substrate a lower electrode, a photoelectric conversion layer, and an upper electrode, wherein the lower electrode of the first cell and the lower electrode of the second cell are separated by a lower electrode separation groove, and wherein a plurality of through holes are formed to be spaced from each other in the photoelectric conversion layer of the second cell in order to connect the upper electrode of the first cell with the lower electrode of the second cell.

Abstract: Disclosed is a see-through type photovoltaic module that includes: a first transparent substrate; a second transparent substrate; a first transparent electrode and a second electrode, all of which are placed between the first transparent substrate and the second transparent substrate; a photoactive layer being placed between the first transparent electrode and the second electrode and converting light into electrical energy; and a protective layer placed between the second electrode and the second transparent substrate, wherein a 3-dimensional photonic crystal structural layer is formed on the surface of the second transparent substrate facing the first transparent substrate.

Abstract: Provided is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate: a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises a hydrogenated amorphous silicon based material and a hydrogenated proto-crystalline silicon based material having a crystalline silicon grain, and comprises a non-silicon based element; and a second electrode disposed on the photoelectric transformation layer.

Abstract: A method for removing moisture from a substrate coated with a transparent electrode comprises the steps of placing the substrate coated with the transparent electrode in an infrared oven, applying heat to the substrate in the infrared oven, drawing the substrate from the infrared oven, loading the substrate in a chamber and reducing pressure in the chamber and performing a heat treatment on the substrate.

Abstract: Disclosed is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate; a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises hydrogenated amorphous silicon based material and hydrogenated proto-crystalline silicon based material having a crystalline silicon grain; and a second electrode disposed on the photoelectric transformation layer.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell on the first electrode; forming a portion of an intermediate reflector on the first unit cell in a first manufacturing system, the intermediate reflector including a plurality of first and second sub-layers alternately stacked; exposing to the air the substrate on which the portion of the intermediate reflector is formed; forming the rest of the intermediate reflector in a second manufacturing system, the intermediate reflector including the plurality of the first and second sub-layers alternately stacked; forming a second unit cell on the intermediate reflector; and forming a second electrode on the second unit cell.

Abstract: Disclosed is a method for manufacturing a photovoltaic device that includes: providing a substrate having a first electrode formed thereon; forming a first unit cell, the first unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, which are sequentially stacked from the first electrode; exposing to the air either a portion of an intermediate reflector formed on the first unit cell or the second conductive silicon layer of the first unit cell; forming the rest of the intermediate reflector or the entire intermediate reflector on the second conductive silicon layer of the first unit cell in a second manufacturing system; and forming a second unit cell on the intermediate reflector in the second manufacturing system, the second unit cell including a first conductive silicon layer, an intrinsic silicon layer and a second conductive silicon layer, sequentially stacked.

Abstract: Disclosed is a photovoltaic device that includes: a substrate; a first electrode disposed on the substrate; a photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer which comprises at least one pair of an intrinsic first sub-layer and an intrinsic second sub-layer, each of which comprises hydrogenated amorphous silicon and hydrogenated proto-crystalline silicon; and a second electrode disposed on the photoelectric transformation layer; wherein a thickness ratio between the first sub-layer and the second sub-layer in each of the pair is constant.

Abstract: A tandem thin-film silicon solar cell comprises a transparent substrate, a first unit cell positioned on the transparent substrate, the first unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer, an intermediate reflection layer positioned on the first unit cell, the intermediate reflection layer including a hydrogenated n-type microcrystalline silicon oxide of which the oxygen concentration is profiled to be gradually increased and a second unit cell positioned on the intermediate reflection layer, the second unit cell comprising a p-type window layer, an i-type absorber layer and an n-type layer.

Abstract: Disclosed is a method for manufacturing a photovoltaic device including a substrate; a first electrode and a second electrode which are placed over the substrate; a first conductive semiconductor layer, an intrinsic semiconductor layer including a first sub-layer and a second sub-layer, and a second conductive semiconductor layer, which are placed between the first electrode and the second electrode. The method comprising: forming the first sub-layer having a first crystal volume fraction in an ‘i’-th process chamber group (‘i’ is a natural number equal to or greater than 1) among a plurality of process chamber groups; and forming the second sub-layer in an ‘i+1’-th process chamber group among the plurality of the process chamber groups, the second sub-layer contacting with the first sub-layer, including crystalline silicon grains and having a second crystal volume fraction greater than the first crystal volume fraction.

Abstract: Disclosed is a method for handling a flexible substrate of solar cell. The method includes: providing a flexible substrate; performing static electricity removal and atmospheric pressure plasma cleaning with respect to the flexible substrate; forming a first electrode on the flexible substrate; forming a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer on the first electrode; and forming a second electrode on the second conductive semiconductor layer.

Abstract: Disclosed is a method for heating a substrate of a solar cell. The method includes: providing a single or poly crystalline substrate; heating the substrate at atmosphere by a non-contact heater; and forming a thin film, which includes amorphous silicon or silicon alloy, on the substrate.

Abstract: Disclosed is a method for cleaning the substrate of a solar cell. The method includes: providing a single or poly crystalline substrate; performing a wet etching process such that the surface of the substrate is textured; performing an atmospheric pressure plasma cleaning process on the textured substrate; and forming p-n junction.