Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method comprises forming a first electrode, a photoelectric conversion layer and a second electrode on a substrate sequentially; forming an insulating layer covering the second electrode; forming a first trench line and a second trench line in the insulating layer on the second electrode such that the second electrode is exposed, wherein at least two photovoltaic cells are included between the first trench line and the second trench line; and forming a first conductive bus bar and a second conductive bus bar by filling the first and the second trench lines with a conductive material.

Abstract: Disclosed is a photovoltaic device that comprises: a first electrode including a transparent conductive oxide layer; a first unit cell being placed on the first electrode; a second unit cell being placed on the first unit cell; and a second electrode being placed on the second unit cell, wherein the intrinsic semiconductor layer of the first unit cell includes hydrogenated amorphous silicon or hydrogenated amorphous silicon based material, wherein an intrinsic semiconductor layer of the second unit cell includes hydrogenated microcrystalline silicon or hydrogenated microcrystalline silicon based material, and wherein a ratio of a root mean square roughness to an average pitch of a texturing structure formed on the surface of the first electrode is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: An annealing method of a zinc oxide thin film, comprises loading a substrate coated with a zinc oxide thin film into a chamber, allowing a hydrogen gas to be flowed into the chamber, fixing pressure in the chamber and annealing the zinc oxide thin film using the hydrogen gas in the chamber.

Abstract: Disclosed is a method for manufacturing a photovoltaic device including: a forming the first sub-layer including impurity by allowing first flow rate values of the source gas introduced into one group of a first group consisting of odd numbered process chambers and a second group consisting of even numbered process chambers to be maintained constant in each of the process chambers of the one group; and a forming the second sub-layer including impurity by allowing second flow rate values of the source gas introduced into the other group of the first group and the second group to be maintained constant in each of the process chambers of the other group, wherein the second flow rate values are less than the first flow rate values.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device according to the present invention includes: a first electrode; a second electrode; and a p-type window layer, a buffer layer, a light absorbing layer and an n-type layer, which are sequentially stacked between the first electrode and the second electrode, wherein, when the p-type window layer is composed of hydrogenated amorphous silicon oxide, the buffer layer is composed of either hydrogenated amorphous silicon carbide or hydrogenated amorphous silicon oxide, and wherein, when the p-type window layer is composed of hydrogenated amorphous silicon carbide, the buffer layer is composed of hydrogenated amorphous silicon oxide.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a substrate; a first electrode placed on the substrate; a second electrode which is placed opposite to the first electrode and which light is incident on; a first unit cell being placed between the first electrode and the second electrode, and including an intrinsic semiconductor layer including crystalline silicon grains making the surface of the intrinsic semiconductor layer toward the second electrode textured; and a second unit cell placed between the first unit cell and the second electrode.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a first electrode and a second electrode; a first unit cell and a second unit cell which are placed between the first electrode and the second electrode and include a first conductive semiconductor layer, an intrinsic semiconductor layer and a second conductive semiconductor layer; and an intermediate reflector which is placed between the first unit cell and the second unit cell, and includes a hydrogenated amorphous carbon layer.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes: a flexible substrate; a first electrode and a second electrode located over the flexible substrate; and at least one unit cell located between the first electrode and the second electrode, wherein the first electrode includes a transparent conductive oxide layer, wherein a texturing structure is formed on the transparent conductive oxide layer, and wherein a ratio of a root mean square (rms) roughness to an average pitch of the texturing structure is equal to or more than 0.05 and equal to or less than 0.13.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device of the present invention includes: a first electrode and a second electrode, which are sequentially placed on a substrate; a first photoelectric conversion layer being placed between the first electrode and the second electrode, and including an n-type semiconductor layer, an intrinsic semiconductor layer and a p-type semiconductor layer, which are sequentially stacked; a second photoelectric conversion layer being placed between the first photoelectric conversion layer and the second electrode, and including an n-type semiconductor layer, an intrinsic semiconductor layer and a p-type semiconductor layer, which are sequentially stacked; and light transmitting particles placed within the second electrode.

Abstract: A thin film silicon solar cell comprises a front transparent electrode, a p-type window layer, a buffer layer, an i-type absorber layer, an n-type layer and a metal rear electrode. The front transparent electrode is stacked on a transparent substrate. The p-type window layer is stacked on the front transparent electrode, and has a thickness in a range of 12 nm to 17 nm. The buffer layer is stacked on the p-type window layer, and has a carbon concentration in a range of 0.5 to 3.0 atomic % and a thickness in a range of 3 to 8 nm. The i-type absorber layer is stacked on the buffer layer. The n-type layer is stacked on the i-type absorber layer. The metal rear electrode is stacked on the n-type layer.

Abstract: A manufacturing method of a thin film solar cell comprises performing dry cleaning of an insulation substrate on which a transparent electrode is formed, patterning the transparent electrodes to be spaced apart from each other, performing dry cleaning of the patterned transparent electrodes, forming a semiconductor layer on surfaces of the transparent electrodes and patterning a metal electrode on the semiconductor layer.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method comprising: forming a first electrode on a substrate; forming a first unit cell on the first electrode, the first unit cell comprising an intrinsic semiconductor layer; forming an intermediate reflector on the first unit cell, the intermediate reflector comprises a plurality of sub-layers stacked alternately by modulating applied voltages in accordance with time, the applied voltages exciting plasma and having mutually different frequencies; forming a second unit cell on the intermediate reflector, the second unit cell comprising an intrinsic semiconductor layer; and forming a second electrode on the second unit cell.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method comprising: forming a first electrode on a substrate; forming a first unit cell comprising an intrinsic semiconductor layer on the first electrode; forming an intermediate reflector on the first unit cell, and the intermediate reflector comprising a plurality of sub-layers stacked alternately by changing a flow rate of non-silicon based source gas; forming a second unit cell comprising an intrinsic semiconductor layer on the intermediate reflector; and forming a second electrode on the second unit cell.

Abstract: Disclosed is a method for manufacturing a photovoltaic device. The method includes: forming a first electrode on a substrate; forming a first unit cell converting light into electricity on the first electrode; forming an intermediate reflector on the first unit cell, the intermediate reflector including metallic nanoparticles arranged therein; and forming a second unit cell converting light into electricity on the intermediate reflector.

Abstract: Disclosed is a photovoltaic device. The photovoltaic device includes a substrate; a first unit cell disposed on the substrate and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer; an intermediate reflector disposed on the first unit cell and comprising a hydrogenated n-type microcrystalline silicon carbide or a hydrogenated n-type microcrystalline silicon nitride profiled such that carbon concentration or nitride concentration is higher the farther it is from a light incident side; and a second unit cell disposed on the intermediate reflector and comprising a p-type window layer, an i-type photoelectric conversion layer and an n-type layer.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; wherein the light absorbing layer includes the first sub-layer and the second sub-layer, the first sub-layer including hydrogenated micro-crystalline silicon germanium (?c-SiGe:H) and an amorphous silicon germanium network (a-SiGe:H) formed among the hydrogenated micro-crystalline silicon germaniums, the second sub-layer including hydrogenated micro-crystalline silicon (?c-Si:H) and an amorphous silicon network (a-Si:H) formed among the hydrogenated micro-crystalline silicons.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer, wherein the light absorbing layer includes a first sub-layer and a second sub-layer, each of which includes a hydrogenated amorphous silicon based material respectively; and wherein the first sub-layer and the second sub-layer include a non-silicon based element, and the second sub-layer includes a crystalline silicon grain surrounded by the hydrogenated amorphous silicon based element.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; at least one photoelectric transformation layer disposed on the first electrode, the photoelectric transformation layer including a light absorbing layer; and a second electrode disposed on the photoelectric transformation layer; and wherein the light absorbing layer included in at least the one photoelectric transformation layer includes a first sub-layer and a second sub-layer, each of which includes hydrogenated amorphous silicon based material and a crystalline silicon grain respectively.

Abstract: A photovoltaic device with a low degradation rate and a high stability efficiency. In one aspect, the photovoltaic device includes: a substrate; a first electrode disposed on the substrate; a plurality of photoelectric transformation layers disposed on the first electrode, the photoelectric transformation layer comprising a light absorbing layer; and a second electrode disposed on a plurality of the photoelectric transformation layers; wherein the light absorbing layer comprised in at least one of a plurality of the photoelectric transformation layers comprises a first sub-layer and a second sub-layer, each of which comprises hydrogenated amorphous silicon and hydrogenated proto-crystalline silicon respectively, and wherein a thickness of the first sub-layer is actually the same as a thickness of the second sub-layer.

Abstract: A manufacturing method of a thin film solar cell comprises performing dry cleaning of an insulation substrate on which a transparent electrode is formed, patterning the transparent electrodes to be spaced apart from each other, performing dry cleaning of the patterned transparent electrodes, forming a semiconductor layer on surfaces of the transparent electrodes and patterning a metal electrode on the semiconductor layer.