Abstract: A semiconductor device may include a page buffer comprising first to fifth latches, wherein the first to third latches and the fifth latch are configured to store 4-bit original data, among 5-bit original data, respectively, and the fourth latch is configured to store data identical with the data that has been stored in the second latch and a control circuit configured to determine a program inhibition pattern based on data that have been stored in two of the first to fifth latches and control the page buffer so that data that has been stored in at least one of the first to fifth latches is inverted based on the program inhibition pattern.

Abstract: A pipeline system includes a first inverter latch configured to receive plural data entries, and plural second inverter latches coupled to each other in parallel for storing the plural data entries input from the first inverter latch in a distributive manner. Plural first switches are arranged between the first inverter latch and the plural second inverter latches, each first switch configured for controlling transmission of each of the plural data entries from the first inverter latch to one of the plural second inverter latches. Plural second switches are configured to output the plural data entries stored in the plural second inverter latches.

Abstract: A semiconductor device may include a memory cell array including a memory block including a plurality of memory strings connected between a plurality of bit lines and a common source line, a control circuit that generates a page buffer control signal, a voltage control signal, and a drive address signal, a page buffer group including a plurality of page buffers and configured to form each of the plurality of bit lines to a preset voltage level, and generate a threshold voltage variation result on the basis of a change in the voltage level of each of the plurality of bit lines, a voltage generation circuit that generates a threshold verification voltage and a pass voltage, and a line drive circuit that drives a plurality of select lines to a level of the threshold verification voltage, and drives a plurality of word lines to a level of the pass voltage, during the threshold voltage variation verification.

Abstract: A memory device includes a plurality of memory planes, each including a plurality of memory banks; one or more plane groups, each comprising at least two memory planes sharing at least one peripheral circuit; a plurality of compressing circuits, each connected to a corresponding memory bank and outputting compressed data by compressing data read from the corresponding memory bank; a plurality of merge circuits, each receiving compressed data and at least one output control signal corresponding to a merge group of a plurality of merge groups, each merge circuit outputting, in response to at least one output control signal, merged data obtained by merging compressed data corresponding to memory banks grouped in the merge group; and an output buffer circuit latching and outputting the merged data in response to at least one output control signal. The merge group comprises at least two memory banks in a same plane group.

Abstract: A column address generation circuit including: a command set conversion section configured to generate column address information on the basis of sector information included in a first command set synchronized with a first clock signal, and to output a second command set from the first command set by replacing information on column address cycles of the first clock signal with the column address information in response to a conversion signal; and a column address output section configured to output a column address on the basis of the second command set.

Abstract: A semiconductor device may include a page buffer comprising first to fifth latches, wherein the first to third latches and the fifth latch are configured to store 4-bit original data, among 5-bit original data, respectively, and the fourth latch is configured to store data identical with the data that has been stored in the second latch and a control circuit configured to determine a program inhibition pattern based on data that have been stored in two of the first to fifth latches and control the page buffer so that data that has been stored in at least one of the first to fifth latches is inverted based on the program inhibition pattern.

Abstract: The present technology relates to a semiconductor device. According to the present technology, a memory device having a reduced size may include a plurality of memory cells connected to a selected word line, a plurality of page buffers configured to store at least one second logical page data except for first logical page data in a plurality of first program loops performed on the plurality of memory cells, and store the first logical page data after the plurality of first program loops are performed, and a control logic configured to control the plurality of first program loops based on the at least one second logical page data, determine first memory cells programmed to one program state based on the first logical page data, and control a plurality of second program loops performed on second memory cells.

Abstract: A semiconductor device may include a memory cell array including a memory block including a plurality of memory strings connected between a plurality of bit lines and a common source line, a control circuit that generates a page buffer control signal, a voltage control signal, and a drive address signal, a page buffer group including a plurality of page buffers and configured to form each of the plurality of bit lines to a preset voltage level, and generate a threshold voltage variation result on the basis of a change in the voltage level of each of the plurality of bit lines, a voltage generation circuit that generates a threshold verification voltage and a pass voltage, and a line drive circuit that drives a plurality of select lines to a level of the threshold verification voltage, and drives a plurality of word lines to a level of the pass voltage, during the threshold voltage variation verification.

Abstract: The present technology includes a memory device and a method of operating the same. The memory device includes a string including a first select transistor, memory cells, and a second select transistor connected between a source line and a bit line, and a voltage generator configured to supply a precharge voltage to the source line and selectively apply a turn on voltage or a negative voltage to a first select line connected to a gate of the first select transistor. The voltage generator is configured to apply the precharge voltage to the source line, apply the turn on voltage to the first select line during a first time in which a channel layer of the string is precharged, and apply the negative voltage to the first select line during a second time in which the channel layer of the string is precharged, while precharging the channel layer of the string.

Abstract: Proposed is a highly corrosion-resistant aluminum alloy including one or more components selected from among 0.1 wt. % or less (except for 0 wt. %) of Cu, 0.15 wt. % or less (except for 0 wt. %) of Si, 0.2 wt. % or less (except for 0 wt. %) of Fe, 0.9 to 1.5 wt. % of Mn, 0.03 to 0.15 wt. % of Ti, 0.03 to 0.15 wt. % of Cr, and 0.03 to 0.15 wt. % of Zr, and the remaining proportion of aluminum (Al) and unavoidable impurities. The highly corrosion-resistant aluminum alloy contains Ti, Cr, and Zr in a predetermined weight ratio or in equal weight percentages (wt. %), thereby exhibiting improved corrosion resistance in a saline water environment while exhibiting excellent levels in tensile strength and yield strength.

Abstract: Provided is a vibration device using sound and a system comprising the same. More particularly, the present invention relates to a vibration device for generating vibration using sound such that the beat of the sound can be felt, which is convenient to carry or transfer due to a lightweight and compact size thereof, is capable of generating vibration matching the beat of sound to which a user is currently listening, is furthermore capable of generating vibrations of various feelings matching the beat of sound according to user settings, thereby greatly enhancing effects that the user may feel, and is very inexpensive to manufacture, and a system comprising the vibration device.

Abstract: The present invention provides a rotor comprising: a rotor core; a plurality of magnets disposed outside the rotor core; and a molding part disposed outside the plurality of magnets, wherein the rotor core includes a plurality of guide protrusions disposed between the plurality of magnets, and the distance from the center of the rotor core to the outer surface of the molding part passing across the center of one of the guide protrusions is shorter than the distance from the same to the outer surface of the molding part passing across the center of one of the plurality of magnets.

Abstract: Provided is a vibration system using sound. More particularly, the present invention relates to a system which is capable of generating vibration using sound so that the beats of the sound may be felt, is convenient to carry or move due to a lightweight and compact size thereof, is capable of generating vibration matching a beat of sound to which a user is currently listening, is capable of generating vibrations matching various feelings according to beats of sound on the basis of user setting, thereby greatly enhancing effects that the user may feel, and is very inexpensive to manufacture.

Abstract: Provided is a vibration device using sound and a system comprising the same. More particularly, the present invention relates to a vibration device for generating vibration using sound such that the beat of the sound can be felt, which is convenient to carry or transfer due to a lightweight and compact size thereof, is capable of generating vibration matching the beat of sound to which a user is currently listening, is furthermore capable of generating vibrations of various feelings matching the beat of sound according to user settings, thereby greatly enhancing effects that the user may feel, and is very inexpensive to manufacture, and a system comprising the vibration device.

Abstract: Provided is a vibration system using sound. More particularly, the present invention relates to a system which is capable of generating vibration using sound so that the beats of the sound may be felt, is convenient to carry or move due to a lightweight and compact size thereof, is capable of generating vibration matching a beat of sound to which a user is currently listening, is capable of generating vibrations matching various feelings according to beats of sound on the basis of user setting, thereby greatly enhancing effects that the user may feel, and is very inexpensive to manufacture.

Abstract: A peptide is described herein that has: (i) a simple structure compared to existing natural human erythropoietin, thus capable of easily passing through a tissue-blood barrier, (ii) excellent bioactivity with respect to cell-protecting activity, (iii) a low manufacturing cost, thus being economically advantageous, and (iv) no side effects on cell proliferation. Also, a pharmaceutical composition comprising the erythropoietin-derived peptide described herein as an active ingredient is described. The pharmaceutical composition may be used for preventing or treating cell damage-related illnesses, such as stroke, mechanical damage or ischemic damage to the nervous system, myocardial infarction, retinal damage, and diabetes. Also, the described pharmaceutical composition may be used for preventing cell damage.

Abstract: The present invention provides a rotor comprising: a rotor core; a plurality of magnets disposed outside the rotor core; and a molding part disposed outside the plurality of magnets, wherein the rotor core includes a plurality of guide protrusions disposed between the plurality of magnets, and the distance from the center of the rotor core to the outer surface of the molding part passing across the center of one of the guide protrusions is shorter than the distance from the same to the outer surface of the molding part passing across the center of one of the plurality of magnets.

Abstract: The present invention relates to technology for monitoring a gas in a closed space, and more particularly, to a system for monitoring a gas in a closed space and an operating method of the system, which monitor a gas in a closed space and diagnose and correct an abnormality of a closed-space gas measurement apparatus.