Abstract: A non-volatile memory device includes first and second vertical channel layers generally protruding upwardly from a semiconductor substrate substantially in parallel; a first gate group configured to include a plurality of memory cell gates which are stacked substantially along the first vertical channel layer and are isolated from each other with an interlayer insulating layer interposed substantially between the memory cell gates; a second gate group configured to include a plurality of memory cell gates which are stacked substantially along the second vertical channel layer and are isolated from each other with the interlayer insulating layer interposed substantially between the memory cell gates; a pipe channel layer configured to couple the first and the second vertical channel layers; and a channel layer extension part generally extended from the pipe channel layer to the semiconductor substrate and configured to couple the pipe channel layer and the semiconductor substrate.

Abstract: A method for fabricating a non-volatile memory device includes forming a stacked structure where a plurality of inter-layer dielectric layers and a plurality of second sacrificial layers are alternately stacked over a substrate, forming a channel layer that is coupled with a portion of the substrate by penetrating through the stacked structure, forming a slit that penetrates through the second sacrificial layers by selectively etching the stacked structure, removing the second sacrificial layers that are exposed through the slit, forming an epitaxial layer over the channel layer exposed as a result of the removal of the second sacrificial layers, and forming a gate electrode layer filling a space from which the second sacrificial layers are removed, and a memory layer interposed between the gate electrode layer and the epitaxial layer.

Abstract: A method for inspecting a polysilicon layer includes: radiating excitation light to the polysilicon layer; and detecting a photoluminescence signal generated by the excitation light, wherein average power of the excitation light has a range of 1 W/cm2 to 10 W/cm2, and peak power of the excitation light has a range of 100 W/cm2 to 1000 W/cm2.

Abstract: A spindle motor including a base, a bearing housing supported on the base, a bearing provided within the bearing housing, a rotating shaft rotatably supported by the bearing, a stator including a core fixed to the bearing housing and coils wound around the core, a rotor including a rotor yoke fixed to the rotating shaft, and a first magnet installed on the rotor yoke facing the stator, a turntable positioned on the rotor yoke, rotating together with the rotating shaft, a center guide member coupled to the rotating shaft at an upper side of the turntable, an elastic member disposed between the turntable and the center guide member for elastically supporting the center guide member.

Abstract: A 3D non-volatile memory device includes a plate-type lower select line formed over a substrate, a lower select transistor formed in the lower select line, a plurality of memory cells stacked over the lower select transistor, an upper select transistor formed over the memory cells, and a line-type common source line formed over the substrate and spaced from the lower select line.

Abstract: A 3D non-volatile memory device includes a plate-type lower select line formed over a substrate, a lower select transistor formed in the lower select line, a plurality of memory cells stacked over the lower select transistor, an upper select transistor formed over the memory cells, and a line-type common source line formed over the substrate and spaced from the lower select line.

Abstract: A device for inspecting a polycrystalline silicon layer that is crystallized by receiving irradiated laser beams on a front side of the polycrystalline silicon layer includes: a light source configured to emit inspection beams to a rear side of the polycrystalline silicon layer; a light inspector configured to inspect the inspection beams reflected at the rear side of the polycrystalline silicon layer; and a controller that controls the light source and the light inspector.

Abstract: A programming method of a non-volatile memory device that includes a string of memory cells with a plurality of floating gates and a plurality of control gates disposed alternately, wherein each of the memory cells includes one floating gate and two control gates disposed adjacent to the floating gate and two neighboring memory cells share one control gate. The programming method includes applying a first program voltage to a first control gate of a selected memory cell and a second program voltage that is higher than the first program voltage to a second control gate of the selected memory cell, and applying a first pass voltage to a third control gate disposed adjacent to the first control gate and a second pass voltage that is lower than the first pass voltage to a fourth control gate disposed adjacent to the second control gate.

Abstract: A reading method of a non-volatile memory device that includes a plurality memory cells that each include one floating gate and two control gates disposed adjacent to the floating gate on two alternate sides of the floating gate, respectively, and two adjacent memory cells share one control gate, the reading method comprising applying a read voltage to control gates of a selected memory cell, applying a second pass voltage to alternate control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates next to the selected memory cell, and applying a first pass voltage that is lower than the second pass voltage to alternate the control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates secondly next to the selected memory cell.

Abstract: The present invention relates to a herbal drug composition for cartilage protection comprising plant extracts of Clematis Radix, Trichosanthis Radix, and Prunellae Spica and an optimal content of rosmarinic acid to: (i) alleviate pains; (ii) inhibit the acute/chronic inflammation, platelet/whole blood aggregation, immunocyte (B-lymphcyte and T-lymphcyte) proliferation, inflammation-inducing enzyme activities, and enzyme activities associated with degradation of joint tissue; (iii) scavenge activity of toxic active oxygen radicals; and (iv) further provide excellent cartilage protection activity to be effectively used as an anti-inflammatory agent with analgesic effects, blood circulation enhancer, arthritis therapeutic agent and cartilage protective.

Abstract: A nonvolatile memory device includes a channel vertically extending from a substrate and comprising a first region that is doped with first impurities and a second region that is disposed under the first region, a plurality of memory cells and a selection transistor stacked over the substrate along the channel, and a diffusion barrier interposed between the first region and the second region, wherein a density of the first impurities is higher than a density of impurities of the second region.

Abstract: The present invention relates to an apparatus and method of performing wireless communication using multiple directional antennas. The transportation means according to the present invention includes at least two communication devices, wherein one of the at least two communication devices, communication device A, includes a directional antenna group 1, and the other communication device, communication device B, includes a directional antenna group 2, and wherein the communication device A performs directional antenna selection control of the directional antenna group 1 included in the communication device A depending on whether the communication device B is connected with a network. According to the present invention, one of the communication devices gains access to a satellite station, a base station, or other ships, at least one antenna of another communication device may be used to relay wireless communication and may play a role as a base station or an AP.

Abstract: Disclosed herein are a maritime communication apparatus and method. The maritime communication apparatus includes a land-based network communication unit, a maritime network communication unit, and a communication control unit. The land-based network communication unit communicates with a land-based communication network. The maritime network communication unit communicates with a maritime communication network. The communication control unit links the communication of the land-based network communication unit with the communication of the maritime network communication unit in accordance with a destination address of data provided by any one of the land-based network communication unit and the maritime network communication unit.

Abstract: A spindle motor including a base, a bearing housing supported on the base, a bearing provided within the bearing housing, a rotating shaft rotatably supported by the bearing, a stator including a core fixed to the bearing housing and coils wound around the core, a rotor including a rotor yoke fixed to the rotating shaft, and a first magnet installed on the rotor yoke facing the stator, a turntable positioned on the rotor yoke, rotating together with the rotating shaft, a center guide member coupled to the rotating shaft at an upper side of the turntable, an elastic member disposed between the turntable and the center guide member for elastically supporting the center guide member.

Abstract: A method for fabricating a non-volatile memory device includes forming a stacked structure where a plurality of inter-layer dielectric layers and a plurality of second sacrificial layers are alternately stacked over a substrate, forming a channel layer that is coupled with a portion of the substrate by penetrating through the stacked structure, forming a slit that penetrates through the second sacrificial layers by selectively etching the stacked structure, removing the second sacrificial layers that are exposed through the slit, forming an epitaxial layer over the channel layer exposed as a result of the removal of the second sacrificial layers, and forming a gate electrode layer filling a space from which the second sacrificial layers are removed, and a memory layer interposed between the gate electrode layer and the epitaxial layer.

Abstract: A spindle motor including a base, a bearing housing supported on the base, a bearing provided within the bearing housing, a rotating shaft rotatably supported by the bearing, a stator including a core fixed to the bearing housing and coils wound around the core, a rotor including a rotor yoke fixed to the rotating shaft, and a first magnet installed on the rotor yoke facing the stator, a turntable positioned on the rotor yoke, rotating together with the rotating shaft, a center guide member coupled to the rotating shaft at an upper side of the turntable, an elastic member disposed between the turntable and the center guide member for elastically supporting the center guide member.

Abstract: A non-volatile memory device includes a substrate including a resistor layer having a resistance lower than that of a source line, channel structures including a plurality of inter-layer dielectric layers that are alternately staked with a plurality of channel layers over the substrate, and the source line configured to contact sidewalls of the channel layers, where a lower end of the source line contacts the resistor layer.

Abstract: A reading method of a non-volatile memory device that includes a plurality memory cells that each include one floating gate and two control gates disposed adjacent to the floating gate on two alternate sides of the floating gate, respectively, and two adjacent memory cells share one control gate, the reading method comprising applying a read voltage to control gates of a selected memory cell, applying a second pass voltage to alternate control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates next to the selected memory cell, and applying a first pass voltage that is lower than the second pass voltage to alternate the control gates of the memory cells different from the control gates of the selected memory cells starting from the control gates secondly next to the selected memory cell.

Abstract: A non-volatile memory device in accordance with one embodiment of the present invention includes a substrate including a P-type impurity-doped region, a channel structure comprising a plurality of interlayer insulating layers that are alternately stacked with a plurality of channel layers on the substrate, a P-type semiconductor pattern that contacts sidewalls of the plurality of channel layers, wherein a lower end of the P-type semiconductor pattern contacts the P-type impurity-doped region, and source lines that are disposed at both sides of the P-type semiconductor pattern and contact the sidewalls of the plurality of channel layers.

Abstract: A three-dimensional (3-D) nonvolatile memory device includes a support protruded from a surface of a substrate and configured to have an inclined sidewall; channel structures each configured to comprise interlayer insulating layers and channel layers which are alternately stacked over the substrate including the support, bent along the inclined sidewall of the support, wherein each of the channel structures comprises a cell region and a contact region, and the channel layers are exposed in the contact region; select lines formed over the channel structures; and a pillar type channels coupled to respective channel layers at the contact region and penetrating the select lines.