Abstract: The present invention relates to a shape-memory polymer having a 6-arm structure and use thereof. The shape-memory polymer according to the present invention exhibits shape-memory properties by cross-linking, can control temperature for shape restoration through monomer control and has biocompatibility. As a material, it can be developed into a medical material such as a support for the outer wall of blood vessels.

Abstract: A silica sol, a silica aerogel blanket using the same, and a method for manufacturing the same, wherein a hydrophobizing agent, a base catalyst, an organic solvent, and water are included in a catalyst composition when manufacturing the silica aerogel blanket, so that a wet aging step which is performed under high-temperature conditions and increases the amount of a solvent used, surface modification step which uses a large amount of an organic solvent and an expensive surface modifier, resulting in a process that is complex and long and thus inhibiting economic feasibility and productivity, can be omitted.

Abstract: A light emitting device may include a first semiconductor layer; an active layer disposed on the first semiconductor layer; a second semiconductor layer disposed on the active layer; an electrode layer disposed on the second semiconductor layer; a protective layer disposed on the electrode layer; and an insulating film enclosing outer circumferential surfaces of at least the first semiconductor layer, the active layer, the second semiconductor layer, and the electrode layer, and exposing a surface of the first semiconductor layer and a surface of the protective layer.

Abstract: The present disclosure provides an all-in-one image quality improvement model providing method, which restores quality of images degraded due to multiple image quality degradation factors and is performed by a server, including collecting low-quality images of which image quality is degraded due to at least one of the multiple image quality degradation factors and determining an image quality degradation factor that is a cause of image quality degradation of a corresponding image, constructing an integrated restoration network and a single restoration network to restore the low-quality images with respect to the determined image quality degradation factors.

Abstract: An object of the present invention is to provide a material for organic EL elements, the material being excellent in hole injecting/transporting performance, electron-blocking capability, stability in the form of a thin film, and durability. Another object of the present invention is to provide an organic EL element having high efficiency, a low driving voltage, and a long lifespan, by combining the aforementioned material with various materials for organic EL elements, the materials being excellent in hole/electron injecting/transporting performance, electron-blocking capability, stability in the form of a thin film, and durability, such that the properties of the individual materials can be effectively exhibited.

Abstract: The present disclosure relates to an image encoding/decoding method for a machine and a device therefor. An image encoding method according to the present disclosure includes extracting an encoding method feature from an encoding input signal; determining an encoding method that is optimal for the encoding input signal based on the encoding method feature; transforming the encoding input signal based on the encoding method; and encoding an encoding target signal generated by transforming encoding method information and the encoding input signal.

Abstract: An electronic device includes a capacitor connected to an output node of a reception circuit. The reception circuit includes an input unit receiving an input signal and an inverted input signal. The reception circuit also includes a current source including a first PMOS transistor positioned between a power supply voltage terminal and a first internal node and a first NMOS transistor positioned between a ground voltage terminal and a second internal node, the current source configured to amplify a voltage difference of the input signal and the inverted input signal. The reception circuit further includes an output unit driving the output node according to a current supplied from the current source.

Abstract: A method for depositing a multi-layered silicon nitride film using a combination of deposition methods includes the steps of placing the substrate into a first reactor and depositing on at least a portion of a surface of a substrate a first silicon nitride film, a second silicon nitride film, and a third silicon nitride film, which together form the multi-layered silicon nitride film, in a sequence of deposition methods alternating between (i) either plasma enhanced atomic layered deposition (PEALD) or plasma enhanced cyclic chemical vapor deposition (PECCVD), and (ii) PECVD as described herein and using at least one silicon precursor compound comprising at least three Si—N bonds and at least three SiH3 groups represented by formulae A to C described herein.

Abstract: The present invention pertains to a dosing regimen for treating influenza virus diseases, and more specifically, to a method for treating influenza virus-related diseases through the administration of a mixed composition of monoclonal antibodies having a neutralizing activity against the influenza A virus. The treatment method according to the present invention enables influenza A virus-related diseases to be treated through the intravenous administration of a mixed composition of monoclonal antibodies having a neutralizing activity against the influenza A virus. In addition, the treatment method according to the present invention can satisfy unmet medical needs for biological therapeutic agents for influenza virus-related diseases.

Abstract: Disclosed is a lamp control device. The lamp control device may include: a lamp having an LED channel; a channel resistor corresponding to the LED channel; and a controller configured to boost a channel resistor voltage applied to the channel resistor, and retain a channel current of the LED channel as a target current, using the boosted channel resistor voltage.

Abstract: A sensor circuit includes a sensing voltage generating circuit configured to generate a sensing voltage set to have a voltage level corresponding to a sensing condition. The sensor circuit also includes a comparison signal generating circuit configured to compare the sensing voltage with at least one reference voltage to generate at least one comparison signal. The sensor circuit further includes a voltage code calibrating circuit configured to calibrate at least one voltage code for adjusting a voltage level of the reference voltage, based on the at least one comparison signal.

Abstract: A sample and hold circuit includes a sampling circuit including a first amplifier configured to amplify an input voltage to generate an amplification voltage, the sampling circuit configured to perform a sampling operation of sampling the amplification voltage. The sample and hold circuit also includes a holding circuit configured to perform a holding operation of setting an output voltage to a voltage level of the input voltage, based on the sampling operation and an amplification operation of a second amplifier.

Abstract: A semiconductor device includes a voltage supply circuit including a first pad to which a first source voltage that is generated from an external power source is applied and a second pad to which a second source voltage that is generated from the external power source is applied and configured to generate an internal voltage based on at least one of the first source voltage and the second source voltage and an internal voltage supply circuit configured to generate the internal voltage by supplying less than all of the second source voltage to the first source voltage when a level of the second source voltage is a set voltage level or higher, when generating the internal voltage based on the first source voltage.

Abstract: An electronic device includes an internal mode control circuit suitable for generating a burst control signal, a blocking control signal and an internal voltage control signal based on a refresh cycle when an internal mode is performed in a self-refresh operation, a refresh control circuit suitable for generating a refresh signal for performing a refresh operation every refresh cycle when the self-refresh operation is performed, generating the refresh signal every set cycle based on the burst control signal when the internal mode is performed, and blocking the generation of the refresh signal based on the blocking control signal, and an internal voltage generation circuit suitable for adjusting a level of an internal voltage for the refresh operation based on the internal voltage control signal.

Abstract: A power control circuit includes a power control signal generation circuit configured to generate a voltage control signal according to a deep sleep command for operating a semiconductor apparatus in a deep sleep mode; a voltage divider circuit having a division ratio that is changed according to the voltage control signal, and configured to generate a divided voltage by dividing an internal voltage at the changed division ratio; a comparator configured to generate a detection signal by comparing a reference voltage to the divided voltage; an oscillator configured to generate an oscillation signal according to the detection signal; and a pump configured to generate the internal voltage according to the oscillation signal.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: An electronic device includes a drive control signal generation circuit and an internal voltage drive circuit. The drive control signal generation circuit detects a level of an internal voltage to generate a drive control signal that adjusts a level of the internal voltage. The internal voltage drive circuit drives the internal voltage based on the drive control signal.

Abstract: A voltage generation circuit includes an operation voltage driving circuit configured to drive an operation voltage based on a calibration voltage and a feedback voltage and generate the feedback voltage from the operation voltage. The voltage generation circuit also includes a reference voltage calibration circuit configured to generate the calibration reference voltage, wherein the calibration reference voltage varies based on a set value calculated according to the feedback voltage and a reference voltage.

Abstract: A voltage generation circuit includes an operation voltage driving circuit configured to drive an operation voltage based on a calibration voltage and a feedback voltage and generate the feedback voltage from the operation voltage. The voltage generation circuit also includes a reference voltage calibration circuit configured to generate the calibration reference voltage, wherein the calibration reference voltage varies based on a set value calculated according to the feedback voltage and a reference voltage.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursor compounds that allow anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from about 3 to about 5 mol. %, suitable for forming a ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films suitable for forming ferroelectric materials using the formulations.