Patents by Inventor Sey-Ping Sun
Sey-Ping Sun has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240128147Abstract: A semiconductor device is provided. The semiconductor includes a supporting silicon layer and a memory module. The memory module and the supporting silicon layer are bonded via a bonding structure. The bonding structure includes at least one bonding film whose thickness is less than 200 ?.Type: ApplicationFiled: January 20, 2023Publication date: April 18, 2024Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sey-Ping SUN, Chen-Hua YU, Shih Wei LIANG
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Publication number: 20240021488Abstract: A device package includes a first die comprising a semiconductor substrate; an isolation layer on the semiconductor substrate, wherein the isolation layer is a first dielectric material; a first dummy via penetrating through the isolation layer and into the semiconductor substrate; a bonding layer on the isolation layer, wherein the bonding layer is a second dielectric material that has a smaller thermal conductivity than the first dielectric material; a first dummy pad within the bonding layer and on the first dummy via; a dummy die directly bonded to the bonding layer; a second die directly bonded to the bonding layer and to the first dummy pad; and a metal gap-fill material between the dummy die and the second die.Type: ApplicationFiled: July 15, 2022Publication date: January 18, 2024Inventors: Sey-Ping Sun, Shih Wei Liang
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Publication number: 20230420330Abstract: A method includes bonding a first semiconductor die to a semiconductor substrate; bonding a second semiconductor die to the semiconductor substrate, wherein the second semiconductor die is laterally separated from the first semiconductor die by a gap; filling the gap between the first semiconductor die and the second semiconductor die with a metal material to form a thermally conductive region; and depositing a first dielectric layer over the first semiconductor die, the second semiconductor die, and the thermally conductive region.Type: ApplicationFiled: June 24, 2022Publication date: December 28, 2023Inventors: Sey-Ping Sun, Chen-Hua Yu
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Patent number: 11854898Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.Type: GrantFiled: May 17, 2021Date of Patent: December 26, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
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Publication number: 20230361068Abstract: Methods of fusion bonding semiconductor dies in packaged semiconductor devices and packaged semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor package includes a first die including a semiconductor substrate and a through via extending through the semiconductor substrate; a second die bonded to the first die, the second die including a bond pad, the bond pad being physically and electrically coupled to the through via by metal-to-metal bonds; and an encapsulating material on the first die and laterally encapsulating the second die.Type: ApplicationFiled: July 19, 2022Publication date: November 9, 2023Inventors: Sey-Ping Sun, Chih-Hang Tung, Chen-Hua Yu
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Publication number: 20230187406Abstract: A method includes forming a first dielectric layer on a first wafer, and forming a first bond pad penetrating through the first dielectric layer. The first wafer includes a first semiconductor substrate, and the first bond pad is in contact with a first surface of the first semiconductor substrate. The method further includes forming a second dielectric layer on a second wafer and forming a second bond pad extending into the second dielectric layer. The second wafer includes a second semiconductor substrate. The first wafer is sawed into a plurality of dies, with the first bond pad being in a first die in the plurality of dies. The first bond pad is bonded to the second bond pad.Type: ApplicationFiled: February 16, 2022Publication date: June 15, 2023Inventors: Chen-Hua Yu, Shih-Chang Ku, Chien-Yuan Huang, Chuei-Tang Wang, Sey-Ping Sun
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Patent number: 11362000Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.Type: GrantFiled: May 1, 2020Date of Patent: June 14, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
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Patent number: 11251086Abstract: Semiconductor devices, fin field effect transistor (FinFET) devices, and methods of manufacturing semiconductor devices are disclosed. In some embodiments, a semiconductor device includes a substrate comprising a first fin and a second fin. A first epitaxial fin is disposed over the first fin, and a second epitaxial fin is disposed over the second fin. The second fin is proximate the first fin. The first epitaxial fin and the second epitaxial fin have an upper portion with a substantially pillar shape.Type: GrantFiled: August 13, 2018Date of Patent: February 15, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sung-Li Wang, Chih-Sheng Chang, Sey-Ping Sun
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Publication number: 20210272849Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.Type: ApplicationFiled: May 17, 2021Publication date: September 2, 2021Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
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Patent number: 10867976Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.Type: GrantFiled: December 11, 2019Date of Patent: December 15, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Shien Chen, Hsiu-Jen Lin, Ming-Chih Yew, Ming-Da Cheng, Yi-Jen Lai, Yu-Tse Su, Sey-Ping Sun, Yang-Che Chen
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Patent number: 10797156Abstract: A method includes depositing a contact etch stop layer (CESL) over a gate, a source/drain (S/D) region and an isolation feature. The method includes performing a first chemical mechanical planarization (CMP) to expose the gate. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the gate.Type: GrantFiled: December 23, 2019Date of Patent: October 6, 2020Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Neng-Kuo Chen, Clement Hsingjen Wann, Yi-An Lin, Chun-Wei Chang, Sey-Ping Sun
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Publication number: 20200258784Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.Type: ApplicationFiled: May 1, 2020Publication date: August 13, 2020Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
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Patent number: 10651091Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.Type: GrantFiled: April 22, 2019Date of Patent: May 12, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
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Publication number: 20200127118Abstract: A method includes depositing a contact etch stop layer (CESL) over a gate, a source/drain (S/D) region and an isolation feature. The method includes performing a first chemical mechanical planarization (CMP) to expose the gate. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the gate.Type: ApplicationFiled: December 23, 2019Publication date: April 23, 2020Inventors: Neng-Kuo CHEN, Clement Hsingjen WANN, Yi-An LIN, Chun-Wei CHANG, Sey-Ping SUN
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Publication number: 20200118984Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.Type: ApplicationFiled: December 11, 2019Publication date: April 16, 2020Inventors: Chen-Shien Chen, Hsiu-Jen Lin, Ming-Chih Yew, Ming-Da Cheng, Yi-Jen Lai, Yu-Tse Su, Sey-Ping Sun, Yang-Che Chen
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Patent number: 10516031Abstract: A method of fabricating a semiconductor device includes depositing a contact etch stop layer (CESL) over a dummy gate electrode, a source/drain (S/D) region and an isolation feature. The method further includes performing a first CMP to expose the dummy gate electrode. The method further includes removing an upper portion of the CESL. The method further includes performing a second CMP using a slurry different from the first CMP to expose the CESL over the S/D region, wherein, following the second CMP, an entire top surface of the CESL over the S/D region and over the isolation feature is substantially level with a top surface of the dummy gate electrode.Type: GrantFiled: October 31, 2017Date of Patent: December 24, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Neng-Kuo Chen, Clement Hsingjen Wann, Yi-An Lin, Chun-Wei Chang, Sey-Ping Sun
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Patent number: 10510734Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.Type: GrantFiled: November 30, 2018Date of Patent: December 17, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Shien Chen, Hsiu-Jen Lin, Ming-Chih Yew, Ming-Da Cheng, Yi-Jen Lai, Yu-Tse Su, Sey-Ping Sun, Yang-Che Chen
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Publication number: 20190252261Abstract: A fin structure is on a substrate. The fin structure includes an epitaxial region having an upper surface and an under-surface. A contact structure on the epitaxial region includes an upper contact portion and a lower contact portion. The upper contact portion includes a metal layer over the upper surface and a barrier layer over the metal layer. The lower contact portion includes a metal-insulator-semiconductor (MIS) contact along the under-surface. The MIS contact includes a dielectric layer on the under-surface and the barrier layer on the dielectric layer.Type: ApplicationFiled: April 22, 2019Publication date: August 15, 2019Inventors: Sung-Li Wang, Neng-Kuo Chen, Ding-Kang Shih, Meng-Chun Chang, Yi-An Lin, Gin-Chen Huang, Chen-Feng Hsu, Hau-Yu Lin, Chih-Hsin Ko, Sey-Ping Sun, Clement Hsingjen Wann
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Patent number: 10333001Abstract: A fin structure disposed over a substrate and a method of forming a fin structure are disclosed. The fin structure includes a mesa, a channel disposed over the mesa, and a convex-shaped feature disposed between the channel and the mesa. The mesa has a first semiconductor material, and the channel has a second semiconductor material different from the first semiconductor material. The convex-shaped feature is stepped-shaped, stair-shaped, or ladder-shaped. The convex-shaped feature includes a first isolation feature disposed between the channel and the mesa, and a second isolation feature disposed between the channel and the first isolation feature. The first isolation feature is U-shaped, and the second isolation feature is rectangular-shaped. A portion of the second isolation feature is surrounded by the channel and another portion of the second isolation feature is surrounded by the first isolation feature.Type: GrantFiled: March 26, 2018Date of Patent: June 25, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Gin-Chen Huang, Ching-Hong Jiang, Neng-Kuo Chen, Sey-Ping Sun, Clement Hsingjen Wann
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Patent number: 10276548Abstract: An embodiment package includes a first package. The first package includes a first integrated circuit die, an encapsulant around the first integrated circuit die, and redistribution layers over the encapsulant and the first integrated circuit die. The package also includes a second package bonded to the first package by a plurality of functional connectors. The functional connectors and the redistribution layers electrically connect a second integrated circuit die of the second package to the first integrated circuit die. The package also includes a plurality of dummy connectors disposed between the first package and the second package. One end of each of the plurality of dummy connectors facing the first package is physically separated from the first package.Type: GrantFiled: August 4, 2017Date of Patent: April 30, 2019Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chen-Shien Chen, Hsiu-Jen Lin, Ming-Chih Yew, Ming-Da Cheng, Yi-Jen Lai, Yu-Tse Su, Sey-Ping Sun, Yang-Che Chen