Abstract: A semiconductor device includes a gate structure extending along a first lateral direction. The semiconductor device includes a source/drain structure disposed on one side of the gate structure along a second lateral direction, the second lateral direction perpendicular to the first lateral direction. The semiconductor device includes an air gap disposed between the gate structure and the source/drain structure along the second lateral direction, wherein the air gap is disposed over the source/drain structure.

Abstract: This invention relates to the fields of mRNA vaccines, mRNA therapy, and gene therapy and specifically to the use of gene expression vectors or PCR amplicons containing various 5?UTR sequences followed by coding sequences for in vitro and in vivo production of mRNA or proteins of interest.

Abstract: A method of making a semiconductor device includes forming a first transistor on a substrate, wherein forming the first transistor comprises forming a first source/drain electrode in the substrate. The method further includes forming a second transistor on the substrate, wherein forming the second transistor comprises forming a second source/drain electrode. The method further includes forming an insulating layer extending into the substrate, wherein the insulating layer directly contacts the first source/drain electrode, and the insulating layer extends above a top-most surface of the substrate.

Abstract: A semiconductor device includes: first and second active regions extending in a first direction and separated by a gap relative to a second direction substantially perpendicular to the first direction; and gate structures correspondingly over the first and second active regions, the gate structures extending in the second direction; and each of the gate structures extending at least unilaterally substantially beyond a first side of the corresponding first or second active region that is proximal to the gap or a second side of the corresponding first or second active region that is distal to the gap; and some but not all of the gate structures also extending bilaterally substantially beyond each of the first and second sides of the corresponding first or second active region.

Abstract: Methods and systems for emulating a hardware accelerator is provided. When executed by a computer, the platform includes a plurality of computational resources provided by the computer; a hardware emulator operated on a first computational resource of the plurality of computational resources; and an accelerator being emulated in the platform and operated on a second computational resource of the plurality of computational resources, the accelerator being configured to execute an offloading operation.

Abstract: Some implementations described herein provide a method. The method includes forming, in a nanostructure transistor device, a recessed portion for a source/drain region of the nanostructure transistor device. The method also includes forming an inner spacer on a bottom of the recessed portion and on sidewalls of the recessed portion. The method further includes etching the inner spacer such that the inner spacer is removed from the bottom and from first portions of the sidewalls, and such that the inner spacer remains on second portions of the sidewalls. The method additionally includes forming, after etching the inner spacer, a buffer layer over a substrate of the nanostructure transistor device at the bottom of the recessed portion. The method further includes forming the source/drain region over the buffer layer in the recessed portion.

Abstract: A method of forming a semiconductor device includes forming a first layer over a substrate in a deposition chamber with a first deposition cycle and forming a second layer over the substrate in the deposition chamber with a second deposition cycle. The first deposition cycle includes flowing a first process gas over the substrate and flowing a second process gas over the substrate. The second deposition cycle includes flowing a third process gas over the substrate and flowing a fourth process gas over the substrate.

Abstract: A semiconductor device includes semiconductor wires or sheets disposed over a substrate, a source/drain epitaxial layer in contact with the semiconductor wires or sheets, a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires or sheets, a gate electrode layer disposed on the gate dielectric layer and wrapping around each channel region, and insulating spacers disposed in spaces, respectively. The spaces are defined by adjacent semiconductor wires or sheets, the gate electrode layer and the source/drain region. The source/drain epitaxial layer includes multiple doped SiGe layers having different Ge contents and at least one of the source/drain epitaxial layers is non-doped SiGe or Si.

Abstract: A semiconductor device includes semiconductor wires or sheets disposed over a substrate, a source/drain epitaxial layer in contact with the semiconductor wires or sheets, a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires or sheets, a gate electrode layer disposed on the gate dielectric layer and wrapping around each channel region, and insulating spacers disposed in spaces, respectively. The spaces are defined by adjacent semiconductor wires or sheets, the gate electrode layer and the source/drain region. The source/drain epitaxial layer includes multiple doped SiGe layers having different Ge contents and at least one of the source/drain epitaxial layers is non-doped SiGe or Si.

Abstract: The invention relates to a lactic acid bacterium (LAB), Lactobacillus fermentum PS150, and a bioactive protein produced by the LAB, which has an advantageous effect in improving mood disorder, enhancing cognitive functions in brain and treating or preventing a neurodegenerative disease.

Abstract: A semiconductor device includes semiconductor wires or sheets disposed over a substrate, a source/drain epitaxial layer in contact with the semiconductor wires or sheets, a gate dielectric layer disposed on and wrapping around each channel region of the semiconductor wires or sheets, a gate electrode layer disposed on the gate dielectric layer and wrapping around each channel region, and insulating spacers disposed in spaces, respectively. The spaces are defined by adjacent semiconductor wires or sheets, the gate electrode layer and the source/drain region. The source/drain epitaxial layer includes multiple doped SiGe layers having different Ge contents and at least one of the source/drain epitaxial layers is non-doped SiGe or Si.

Abstract: A coating composition and a paper material are provided. The coating composition has water resistance and oil resistance, and includes 100 parts by weight of acrylic resin and 25 to 200 parts by weight of clay. An aspect ratio of the clay is greater than 20.

Abstract: A the quick extraction kit includes a column and a cap. The column has an interior space to be filled with materials for extraction and cleanup. The column has at its top an opening and a flange, and at its bottom an lower tube. The lower tube has an outlet at its bottom. The cap has a base plate, an upper tube on the base plate, and a pair of reinforcing ribs. In particular, the base plate of the cap and the flange of the column together creates a sealing joint there between by spin welding. The upper tube of the cap is in communication with the column and has an inlet. Each of the reinforcing ribs has a bottom surface bonded with the top surface of the base plate, and an inner side surface adjacent to the bottom surface and bonded with a peripheral side surface of the upper tube.

Abstract: A single-photon detector is provided. The detector has multiple avalanche layers. It has an avalanche photodiode (APD) structure using single photon. The APD is made of indium aluminum arsenide (InAlAs). At least two avalanche layers are designed. When the layer for avalanche is numbered only one and the gain is very big, the speed will be deteriorated very quickly. With the design of two avalanche layers in the present invention for the very big gain, the speed deterioration can be suppressed. After measuring, the present invention shows a faster speed as compared to prior arts. It proves that, by using more than two avalanche layers, the present invention effectively improves the feature of single-photon detector. Hence, the present invention is especially suitable for single-photon detection.

Abstract: A drying apparatus includes a gas flow channel, a first hollow fiber module, a second hollow fiber module, a gas driver and a control unit. The gas flow channel is used to accommodate an article and has a first terminal and a second terminal. The first and second hollow fiber modules are disposed at the first and second terminals respectively to adsorb water or to be electrified to desorb water. The gas driver disposed in a gas flow path of the gas flow channel drives the gas flowing into the gas flow channel through the first hollow fiber module and flowing out from the gas flow channel through the second hollow fiber module, or flowing into the gas flow channel through the second hollow fiber module and flowing out from the gas flow channel through the first hollow fiber module. The control unit provides power to the first and second hollow fiber modules and controls the gas driver.

Abstract: The present invention provides a method for determining increased risk of premature birth in a pregnant woman by detecting altered expression level of one or more marker genes in the woman's blood. A kit and device useful for such a method are also provided. In addition, the present invention provides a method for preventing or reducing the likelihood of premature birth.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a first conductivity type. An epitaxial layer having the first conductivity type is disposed on the substrate, and a trench is formed in the epitaxial layer. A first well region having a second conductivity type that is different from the first conductivity type is disposed in the epitaxial layer and under the trench. A first gate electrode having the second conductivity type is disposed in the trench, and a second gate electrode is disposed in the trench on the first gate electrode, wherein the second gate electrode is separated from the first gate electrode by a first insulating layer. A method for forming the semiconductor device is also provided.

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate having a first conductivity type. An epitaxial layer having the first conductivity type is disposed on the substrate, and a trench is formed in the epitaxial layer. A first well region having a second conductivity type that is different from the first conductivity type is disposed in the epitaxial layer and under the trench. A first gate electrode having the second conductivity type is disposed in the trench, and a second gate electrode is disposed in the trench on the first gate electrode, wherein the second gate electrode is separated from the first gate electrode by a first insulating layer. A method for forming the semiconductor device is also provided.

Abstract: The invention relates to a new lactic acid bacteria (LAB), Lactobacillus fermentum PS150, and a bioactive protein produced by the LAB has advantageous effect in improving mood disorder, enhancing cognitive functions in brain and treating or preventing a neurodegenerative disease.

Abstract: The present invention provides a method for determining increased risk of premature birth in a pregnant woman by detecting altered expression level of one or more marker genes in the woman's blood. A kit and device useful for such a method are also provided. In addition, the present invention provides a method for preventing or reducing the likelihood of premature birth.