Abstract: The present invention relates to a preparation method for patternization of metal electrodes in silicon solar cells. After disposing an amorphous silicon layer on a silicon substrate processed by diffusion, laser light is projected on the amorphous silicon layer for patternization, and transforming the amorphous silicon with low optical conductivity into polysilicon with high optical conductivity thanks to the recrystallization process of the laser light. Then, after immersing the amorphous silicon layer in plating liquid, metal electrode can be formed accurately at the spots of the amorphous silicon layer patterned by laser light. No external voltage is required; plating reaction is induced by illumination directly.

Abstract: A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.

Abstract: There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

Abstract: A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

Abstract: A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p+-type back surface field layer on the titanium-based film, the step of providing a p?-type light-soaking layer on the p+-type back surface field layer and the step of conducting n+-type diffusive deposition of phosphine on the p?-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n+-type emitter on the p?-type light-soaking layer.

Abstract: In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

Abstract: There is disclosed a method for making solar cells with sensitized quantum dots in the form of nanometer metal crystals. Firstly, a first substrate is provided. Then, a silicon-based film is grown on a side of the first substrate. A pattern mask process is executed to etch areas of the silicon-based film. Nanometer metal particles are provided on areas of the first substrate exposed from the silicon-based film. A metal electrode is attached to an opposite side of the first substrate. A second substrate is provided. A transparent conductive film is grown on the second substrate. A metal catalytic film is grown on the transparent conductive film. The second substrate, the transparent conductive film and the metal catalytic film together form a laminate. The laminate is inverted and provided on the first substrate. Finally, electrolyte is provided between the first substrate and the metal catalytic film.

Abstract: Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p? type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p? type light-soaking film to form an n+ type emitter. Thus, an n+-p?-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p?-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p?-p+ laminate is etched in a patterned mask process. A p? type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n? type ohmic contact is formed on the n+ type emitter.

Abstract: A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p? type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p? type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.

Abstract: Dichlorosilane and diborane are deposited on the titanium-based alloy film to grow a p+ type back surface field film. The temperature is raised to grow a p? type light-soaking film on the p+ type back surface field film. Phosphine is deposited on the p? type light-soaking film to form an n+ type emitter. Thus, an n+-p?-p+ laminate is provided on the titanium-based alloy film. SiCNO:Ar plasma is used to passivate the n+-p?-p+ laminate, thus forming an anti-reflection film of SiCN/SiO2 on the n+ type emitter. The n+-p?-p+ laminate is etched in a patterned mask process. A p? type ohmic contact is formed on the titanium-based alloy film. The anti-reflection film is etched in a patterned mask process. The n+ type emitter is coated with a titanium/palladium/silver alloy film that is annealed in hydrogen. An n? type ohmic contact is formed on the n+ type emitter.

Abstract: A method for making a tandem solar cell includes the steps of providing a ceramic substrate, providing a titanium-based layer on the ceramic substrate, providing an n+-p?-p+ laminate on the titanium-based layer, passivating the n+-p?-p+ laminate, providing an n-i-p laminate on the n+-p?-p+ laminate, providing a p-type ohmic contact, providing an n-type ohmic contact providing an anti-reflection layer of SiCN/SiO2 on the n-i-p laminate.

Abstract: A method is disclosed for making a titanium-based compound film of a poly-silicon solar cell. In the method, a ceramic substrate is made of aluminum oxide. The ceramic substrate is coated with a titanium film in an e-gun evaporation system. Dichlorosilane is provided on the titanium film by atmospheric pressure chemical vapor deposition. A titanium-based compound film is formed on the ceramic substrate.

Abstract: A method is disclosed for making an anti-reflection film of a solar cell. The method includes the step of providing a laminate. The laminate includes a ceramic substrate, a titanium-based compound film, a p+ type poly-silicon back surface field, a p? type poly-silicon light-soaking film and an n+ type poly-silicon emitter. The laminate is passivated with SiCNO:Ar plasma in a plasma-enhanced vapor deposition device, thus filling the dangling bonds of the silicon atoms at the surface of the n+ type poly-silicon emitter, the dangling bonds of the silicon grains at the grain boundaries of the p? type poly-silicon light-soaking film and the dangling bonds of the silicon atoms in the p+ type poly-silicon back surface field. Finally, the n+ type poly-silicon emitter is coated with an anti-reflection film of SiCN/SiO2.

Abstract: There is disclosed a method for coating nanometer metal particles. The step includes three steps. At the first step, a substrate is provided. At the second step, the substrate is coated with a metal layer. At the third step, the metal layer is annealed so that the metal layer is transformed into nanometer metal particles.

Abstract: A method is disclosed to make a multi-crystalline silicon film of a solar cell. The method includes the step of providing a ceramic substrate, the step of providing a titanium-based film on the ceramic substrate, the step of providing a p+-type back surface field layer on the titanium-based film, the step of providing a p?-type light-soaking layer on the p+-type back surface field layer and the step of conducting n+-type diffusive deposition of phosphine on the p?-type light-soaking layer based on atmospheric pressure chemical vapor deposition, thus forming an n+-type emitter on the p?-type light-soaking layer.

Abstract: A silicon quantum dot fluorescent lamp is made via providing a high voltage source between a cathode assembly and an anode assembly. The cathode assembly is made by providing a first substrate, coating a buffer layer on the first substrate, coating a catalytic layer on the buffer layer and providing a plurality of nanometer discharging elements on the catalytic layer. The anode assembly is made via providing a second substrate, coating a silicon quantum dot fluorescent film on the second substrate with and coating a metal film on the silicon quantum dot fluorescent film.

Abstract: A method is disclosed for making a multi-crystalline silicon film of a solar cell. In the method, a titanium-based film is coated on a ceramic substrate. A back surface field layer is coated on the titanium-based film via providing dichlorosilane and diborane in an atmospheric pressure chemical vapor deposition process at a first temperature. A light-soaking layer is coated on the back surface field layer via providing more dichlorosilane and diborane in the atmospheric pressure chemical vapor deposition process at a second temperature higher than the first temperature.

Abstract: In a method for making a pulsed high-voltage silicon quantum dot fluorescent lamp, an excitation source is made by providing a first substrate, coating the first substrate with a buffer layer of titanium, coating the buffer layer with a catalytic layer of a material selected from a group consisting of nickel, aluminum and platinum and providing a plurality of nanometer discharging elements one the catalytic layer. An emission source is made by providing a second substrate, coating the second substrate with a transparent electrode film of titanium nitride and coating the transparent electrode film with a silicon quantum dot fluorescent film comprising silicon quantum dots. A pulsed high-voltage source is provided between the excitation source and the emission source to generate a pulsed field-effect electric field to cause the nanometer discharging elements to release electrons and accelerate the electrons to excite the silicon quantum dots to emit pulsed visible light.

Abstract: A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film are annealed and therefore converted and interchanged into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p? poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p? poly-crystalline silicon film. An ohmic contact is provided on the transparent and conductive ITO film. Other ohmic contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

Abstract: The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.