Abstract: The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon nitride substrate containing 1˜10 nm distributed quantum dots, said distribution profile of quantum dot size from large to small is corresponding to from inner to outer layers of film respectively, and obtain a 400˜700 nm range of spectrum and white light source under UV photoluminescence or electro-luminescence.

Abstract: The present infra-red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in a nitrogen or argon atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 4 and 8 nanometers.

Abstract: The present red light-emitting device includes a substrate with a first window layer, a silicon dioxide layer positioned on the first window layer, a plurality of silicon nanocrystals distributed in the silicon dioxide layer, a second window layer, a transparent conductive layer and a first ohmic contact electrode positioned in sequence on the silicon dioxide layer, and a second ohmic contact electrode positioned on the bottom surface of the substrate. The present method forms a sub-stoichiometric silica (SiOx) layer on a substrate, wherein the numerical ratio (x) of oxygen atoms to silicon atoms is smaller than 2. A thermal treating process is then performed in an oxygen atmosphere to transform the SiOx layer into a silicon dioxide layer with a plurality of silicon nanocrystals distributed therein. The thickness of the silicon dioxide layer is between 1 and 10,000 nanometers, and the diameter of the silicon nanocrystal is between 3 and 5 nanometers.

Abstract: A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.

Abstract: A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.

Abstract: The present invention discloses a compound semiconductor epitaxial wafer and its fabrication method. The method comprises the steps of the followings: depositing a first buffer layer of silicon on a silicon substrate; depositing a compound semiconductor second buffer layer on the first buffer layer; growing a compound semiconductor first epitaxy layer on the second buffer layer; reducing the threading dislocation density by a thermal treatment, which is caused by the discrepancy in the lattice constants or in the thermal expansion coefficients of the silicon substrate and the compound semiconductor epitaxy layers; growing a compound semiconductor second epitaxy layer on the first epitaxy layer; and, applying a thermal treatment again. Accordingly, a compound semiconductor epitaxy layer with excellent crystal quality is obtained.

Abstract: A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.

Abstract: Efficient transmutation doping of silicon through the bombardment of silicon wafers by a beam of deuterons is described. A key feature of the invention is that the deuterons are required to have an energy of at least 4 MeV, to overcome the Coulomb barrier and thus achieve practical utility. When this is done, transmutationally formed phosphorus in concentrations as high as 10.sup.16 atoms per cc. are formed from deuteron beams having a fluence as low as 10.sup.19 deuterons per square cm. As a byproduct of the process sulfur is also formed in a practical concentration range of about 10.sup.14 atoms per cc. This can be removed by annealing at temperatures in the order of 700 .degree. C. Additional sulfur continues to form as a result of the decay of P.sup.32. Because of the high energy of the deuterons, several silicon wafers may be processed simultaneously if a suitable mask is available and proper alignment is achieved.

Abstract: A method is described for solving the long-standing problem of the generation of slip lines and dislocations during epitaxial deposition onto monocrystalline substrates, chiefly silicon, in a radio-frequency heating reactor. The method involves inserting a pad wafer, which is of the same material and dimension as the substrate, into a flat-bottom recess and over a coaxial flat-bottom depression when on the upper side of the susceptor which allows uniform heating of the monocrystalline substrate. By proper adjustment of the depth thereby eliminating diameter of recess and depression respectively, the occurrence of a radial temperature gradient in the heated substrate can be minimized, and the slip line and the dislocation in the epitaxial deposited wafers up to given maximum dimensions.