Abstract: The present invention provides a method for making a light emitting diode (LED) through a silica film growth, an annealing treatment and a surface treatment so that the LED whose spectrum covers the whole red-light zone of a white-light spectrum is obtained with stability, economy, environmental protection and high efficiency.

Abstract: The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

Abstract: A solar cell is prepared. The solar cell is photo-sensitized. The solar cell has a semiconductor layer. And carbon nanotubes are deposited on the semiconductor layer with an arrangement. The solar cell is prepared with a reduced amount of fabrication material, a lowered fabrication cost and a prolonged lifetime.

Abstract: A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.

Abstract: A method is disclosed for making a thin-film poly-crystalline silicon solar cell. In the method, there is provided an ITO-glass substrate by coating a glass substrate with a transparent and conductive ITO film. An amorphous silicon film is grown on the ITO-glass substrate. An aluminum film is grown on the amorphous silicon film. The aluminum film and the amorphous silicon film arte annealed and therefore converted into an aluminum-silicon alloy film and a p+ poly-crystalline silicon film, respectively. In a low-temperature plasma-based deposition process, a p? poly-crystalline silicon film is coated on the p+ poly-crystalline silicon film, and an n+ poly-crystalline silicon film is coated on the p? poly-crystalline silicon film. An ohm contact is provided on the transparent and conductive ITO film. Other ohm contacts are provided on the n+ poly-crystalline silicon film. An anti-reflection film is coated on the n+ poly-crystalline silicon film.

Abstract: An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.

Abstract: A carbon nanotube is prepared under a non-vacuum environment. An atmospheric pressure chemical vapor deposition (APCVD) is processed with an external high frequency source and a perpendicularly-supplied gas material source for a cold-wall heating treatment. The carbon nanotube is thus obtained with a vertically aligned arrangement at a high speed and a pure quality for production.

Abstract: A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.

Abstract: An amorphous silicon (Si) film is taken to form a metal silicide of Si—Al(aluminum) under a high temperature. Al atoms is diffused into the amorphous Si film for forming the metal silicide of Si—Al as nucleus site. Then through heating and annealing, a microcrystalline or nano-crystalline silicon thin film is obtained. The whole process is only one process and is done in only one reacting chamber.

Abstract: The present invention relates to a method for preparing an optical active layer with 1˜10 nm distributed silicon quantum dots, it adopts high temperature processing and atmospheric-pressure chemical vapor deposition (APCVD), and directly deposit to form a silicon nitrite substrate containing 1˜10 nm distributed quantum dots, said distribution profile of quantum dot size from large to small is corresponding to from inner to outer layers of film respectively, and obtain a 400˜700 nm range of spectrum and white light source under UV photoluminescence or electro-luminescence.

Abstract: A protective layer for a susceptor is prepared. The susceptor is a graphite block; and the protective layer consists of a titanium nitride film and a titanium carbide film. The susceptor with the protective layer is used in epitaxial growth and device process with life time prolonged, energy saved, and cost reduced.

Abstract: A solar cell is prepared. The solar cell is photo-sensitized. The solar cell has a semiconductor layer. And carbon nanotubes are deposited on the semiconductor layer with an arrangement. The solar cell is prepared with a reduced amount of fabrication material, a lowered fabrication cost and a prolonged lifetime.

Abstract: A white light photodiode has a film layer and an ultraviolet (UV) photodiode. The film layer is made of an oxide rich in silicon; and is formed through a chemical vapor deposition. A white light can be generated by exciting the film layer with a UV light from the UV photodiode.

Abstract: A light emitting device includes a substrate, an epitaxial structure positioned on the substrate, an ohmic contact electrode positioned on the epitaxial structure and a current blocking structure positioned in the epitaxial structure. The epitaxial structure includes a bottom cladding layer, an upper cladding layer, a light-emitting layer positioned between the bottom and the upper cladding layer, a window layer positioned on the upper cladding layer and a contact layer positioned on the window layer. The current blocking structure can extend from the bottom surface of the ohmic contact electrode to the light-emitting layer. According to the present invention, at least one ionic implanting process is performed to implant at least one proton beam into the epitaxial structure to form the current blocking structure.

Abstract: A distribution layer of silicon quantum dots are fabricated. After the layer is exposed to sun light for a while, the layer absorbs energy and produces pairs of electron and hole. By limiting the movement of the electrons and their moving directions through the structure obtained, the efficiency of an optoelectronic conversion is enhanced.

Abstract: The present invention is a photosensitized electrode which absorbs sunlight to obtain electron-hole pair. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resist to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

Abstract: The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

Abstract: The present invention provides a method for making a light emitting diode (LED) through a silica film growth, an annealing treatment and a surface treatment so that the LED whose spectrum covers the whole red-light zone of a white-light spectrum is obtained with stability, economy, environmental protection and high efficiency.

Abstract: The present invention provides a luminescent component with silicon quantum dots and its fabricating method, where the luminescent component includes a light-emitting device of high luminescent efficiency, large-area luminescence, cheap raw material and low producing cost.

Abstract: The present invention provides a solar cell that absorbs a light source within a spectrum range from ultraviolet to far infrared with two surfaces by an absorption layer made of a semiconductor.